Research paperExperimental CharacterizationComputational DFTComputed RamanEmergent Trion Resonance Driven by Lattice Reconstruction in a Moiré SuperlatticeZhida Liu, Haonan Wang, Xiaohui Liu, Yue Ni et al.arXiv·2026·10.1103/yvhp-1sm6·arXiv:2407.17025AbstractWe investigate how many-electron excited states emerge in twisted MoSe₂ homobilayers when the lattice reconstructions evolve. We identify a new trion resonance in the transition regime of lattice reconstruction. Magnetic-field-dependent measurements, supported by first-principles calculations, indicate that the exciton forms at the K valley while the doped hole resides in the Γ valley. First-principles calculations further indicate that two nearly degenerate exciton resonances can arise, localized at different sites within the moiré supercell.Read more
Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.3 characterizations7 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.3 characterizations2 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.3 characterizations3 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.4 characterizations3 properties4 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationComputational DFTComputed RamanEmergent Trion Resonance Driven by Lattice Reconstruction in a Moiré SuperlatticeZhida Liu, Haonan Wang, Xiaohui Liu, Yue Ni et al.arXiv·2026·10.1103/yvhp-1sm6·arXiv:2407.17025AbstractWe investigate how many-electron excited states emerge in twisted MoSe₂ homobilayers when the lattice reconstructions evolve. We identify a new trion resonance in the transition regime of lattice reconstruction. Magnetic-field-dependent measurements, supported by first-principles calculations, indicate that the exciton forms at the K valley while the doped hole resides in the Γ valley. First-principles calculations further indicate that two nearly degenerate exciton resonances can arise, localized at different sites within the moiré supercell.Read more
Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.3 characterizations7 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.3 characterizations2 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.3 characterizations3 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.4 characterizations3 properties4 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationComputational DFTComputed RamanEmergent Trion Resonance Driven by Lattice Reconstruction in a Moiré SuperlatticeZhida Liu, Haonan Wang, Xiaohui Liu, Yue Ni et al.arXiv·2026·10.1103/yvhp-1sm6·arXiv:2407.17025AbstractWe investigate how many-electron excited states emerge in twisted MoSe₂ homobilayers when the lattice reconstructions evolve. We identify a new trion resonance in the transition regime of lattice reconstruction. Magnetic-field-dependent measurements, supported by first-principles calculations, indicate that the exciton forms at the K valley while the doped hole resides in the Γ valley. First-principles calculations further indicate that two nearly degenerate exciton resonances can arise, localized at different sites within the moiré supercell.Read more
Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.3 characterizations7 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.3 characterizations2 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.3 characterizations3 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.4 characterizations3 properties4 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationComputational DFTComputed RamanEmergent Trion Resonance Driven by Lattice Reconstruction in a Moiré SuperlatticeZhida Liu, Haonan Wang, Xiaohui Liu, Yue Ni et al.arXiv·2026·10.1103/yvhp-1sm6·arXiv:2407.17025AbstractWe investigate how many-electron excited states emerge in twisted MoSe₂ homobilayers when the lattice reconstructions evolve. We identify a new trion resonance in the transition regime of lattice reconstruction. Magnetic-field-dependent measurements, supported by first-principles calculations, indicate that the exciton forms at the K valley while the doped hole resides in the Γ valley. First-principles calculations further indicate that two nearly degenerate exciton resonances can arise, localized at different sites within the moiré supercell.Read more
Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.3 characterizations7 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.3 characterizations2 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.3 characterizations3 properties3 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand
Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.4 characterizations3 properties4 figuresExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / DielectricExpand