Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Zhida Liu; Haonan Wang; Xiaohui Liu; Yue Ni; Hongtao Yan; Frank Y. Gao; Saba Arash; Hyunsue Kim; Dong Seob Kim; Xiangcheng Liu; Xiaoxiao Yu; Yongxin Zeng; Jiamin Quan; Di Huang; Kenji Watanabe; Takashi Taniguchi; Edoardo Baldini; Keji Lai; Allan H. MacDonald; Chih-Kang Shih; Jamie Warner; Li Yang; Xiaoqin Li

doi:10.1103/yvhp-1sm6

Paper details

Research paper

Experimental CharacterizationComputational DFTComputed Raman

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Zhida Liu, Haonan Wang, Xiaohui Liu, Yue Ni et al.

arXiv·2026·10.1103/yvhp-1sm6·arXiv:2407.17025

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.

3 characterizations7 properties3 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / Dielectric

Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.

3 characterizations2 properties3 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / Dielectric

Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.

3 characterizations3 properties3 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / Dielectric

Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.

4 characterizations3 properties4 figures

ExperimentalMoSe₂Studied MaterialBNSubstrate / DielectricBNSubstrate / Dielectric

Materials

MoSe₂

Studied Material

Also known as

MoSe₂ bilayertwisted MoSe₂ bilayernatural MoSe₂ bilayer

Variables

twist_angle_deg= 60,59.6,59.2,57.5

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Raman Mode Presence	S / LB	shear mode observed in all bilayers; layer-breathing mode observed only in 57.5° bilayer	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsu Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
G Factor	electron-doped trion Zeeman g-factor	20	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsu Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu		—
Trion Binding Energy	H₁	25meV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu		—
Trion Binding Energy	H₂	12meV	MoSe₂	Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
Quasiparticle Band Gap	AA' stacking GW band gap	1.75eV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Quasiparticle Band Gap	DFT band gap	1.14eV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Band Edge Position	CBM	Q	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Band Edge Position	VBM	Γ	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Exciton Energy Difference	X₁-X₂	2meV	MoSe₂	Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
Optical Band Gap	band gap	1.14eV	MoSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Raman Mode Presence	S / LB	shear mode observed in all bilayers; layer-breathing mode observed only in 57.5° bilayer	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsu Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
G Factor	electron-doped trion Zeeman g-factor	20	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsu Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu		—
Trion Binding Energy	H₁	25meV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu		—
Trion Binding Energy	H₂	12meV	MoSe₂	Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
Quasiparticle Band Gap	AA' stacking GW band gap	1.75eV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Quasiparticle Band Gap	DFT band gap	1.14eV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Band Edge Position	CBM	Q	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Band Edge Position	VBM	Γ	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Exciton Energy Difference	X₁-X₂	2meV	MoSe₂	Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
Optical Band Gap	band gap	1.14eV	MoSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Raman Mode Presence	S / LB	shear mode observed in all bilayers; layer-breathing mode observed only in 57.5° bilayer	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsu Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
G Factor	electron-doped trion Zeeman g-factor	20	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsu Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu		—
Trion Binding Energy	H₁	25meV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu		—
Trion Binding Energy	H₂	12meV	MoSe₂	Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
Quasiparticle Band Gap	AA' stacking GW band gap	1.75eV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Quasiparticle Band Gap	DFT band gap	1.14eV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Band Edge Position	CBM	Q	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Band Edge Position	VBM	Γ	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Exciton Energy Difference	X₁-X₂	2meV	MoSe₂	Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
Optical Band Gap	band gap	1.14eV	MoSe₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Raman Mode Presence	S / LB	shear mode observed in all bilayers; layer-breathing mode observed only in 57.5° bilayer	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsu Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
G Factor	electron-doped trion Zeeman g-factor	20	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsu Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu		—
Trion Binding Energy	H₁	25meV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°, Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsu		—
Trion Binding Energy	H₂	12meV	MoSe₂	Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
Quasiparticle Band Gap	AA' stacking GW band gap	1.75eV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Quasiparticle Band Gap	DFT band gap	1.14eV	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Band Edge Position	CBM	Q	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Band Edge Position	VBM	Γ	MoSe₂	Natural MoSe₂ homobilayer device with twist angle near 60°,		—
Exciton Energy Difference	X₁-X₂	2meV	MoSe₂	Twisted MoSe₂ bilayer device with twist angle 57.5°, in the		—
Optical Band Gap	band gap	1.14eV	MoSe₂	—	—	—

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Samples

Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.

Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.

Materials

Why these are connected

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Samples

Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.

Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.

Materials

Why these are connected

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Samples

Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.

Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.

Materials

Why these are connected

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Samples

Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.

Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.

Materials

Why these are connected

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Samples

Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.

Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.

Materials

Why these are connected

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Samples

Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.

Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.

Materials

Why these are connected

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Samples

Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.

Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.

Materials

Why these are connected

Emergent Trion Resonance Driven by Lattice Reconstruction in a Moiré Superlattice

Samples

Natural MoSe₂ homobilayer device with twist angle near 60°, encapsulated between hBN layers in a dual-gate geometry.

Twisted MoSe₂ bilayer device with twist angle 59.6°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 59.2°, encapsulated between hBN layers.

Twisted MoSe₂ bilayer device with twist angle 57.5°, in the lattice-reconstruction transition regime, encapsulated between hBN layers.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

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Characterization

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Simulations

Characterization

Properties

Simulations