Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 characterizations3 properties6 figures
3 characterizations1 property1 figure
1 characterization2 properties1 figure
1 characterization1 figure
No measurements recorded
No measurements recorded
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SLG-SD cell thickness | 50um | — | |||
| Lattice Spacing | AB stacked gallenene a100 spacing | 0.22nm | — | |||
| Nmr Resonance Frequency | 71Ga resonance | 122MHz | — | |||
| Xrd Space Group | bulk alpha-Ga | Cmca | — | |||
| Bond Length | Ga-Ga distance in a100 monolayer | 0.262nm | — | — | ||
| Spinodal Periodicity | SHG angular response | approximately 180-degree periodicity | — |
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Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM
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Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 characterizations3 properties6 figures
3 characterizations1 property1 figure
1 characterization2 properties1 figure
1 characterization1 figure
No measurements recorded
No measurements recorded
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SLG-SD cell thickness | 50um | — | |||
| Lattice Spacing | AB stacked gallenene a100 spacing | 0.22nm | — | |||
| Nmr Resonance Frequency | 71Ga resonance | 122MHz | — | |||
| Xrd Space Group | bulk alpha-Ga | Cmca | — | |||
| Bond Length | Ga-Ga distance in a100 monolayer | 0.262nm | — | — | ||
| Spinodal Periodicity | SHG angular response | approximately 180-degree periodicity | — |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-CONTACTED NANOTUBE PHOTODETECTOR
Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM
Engineering of SnO2–Graphene Oxide Nano-Heterojunctions for Selective Room-temperature Chemical Sensing and Optoelectronic Devices
Combining ultrahigh index with exceptional nonlinearity in resonant transition metal dichalcogenide nanodisks
High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy
Space Charge Doping Induced Band Modulation in Mono- and Bi-layer Graphene: a nano-ARPES study
Laser stabilized to a room temperature cavity with AlGaAs coatings reaching 4.2 × 10−17 fractional frequency instability
Waveguide-coupled light emitting devices made of 2D materials
Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 characterizations3 properties6 figures
3 characterizations1 property1 figure
1 characterization2 properties1 figure
1 characterization1 figure
No measurements recorded
No measurements recorded
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SLG-SD cell thickness | 50um | — | |||
| Lattice Spacing | AB stacked gallenene a100 spacing | 0.22nm | — | |||
| Nmr Resonance Frequency | 71Ga resonance | 122MHz | — | |||
| Xrd Space Group | bulk alpha-Ga | Cmca | — | |||
| Bond Length | Ga-Ga distance in a100 monolayer | 0.262nm | — | — | ||
| Spinodal Periodicity | SHG angular response | approximately 180-degree periodicity | — |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-CONTACTED NANOTUBE PHOTODETECTOR
Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM
Engineering of SnO2–Graphene Oxide Nano-Heterojunctions for Selective Room-temperature Chemical Sensing and Optoelectronic Devices
Combining ultrahigh index with exceptional nonlinearity in resonant transition metal dichalcogenide nanodisks
High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy
Space Charge Doping Induced Band Modulation in Mono- and Bi-layer Graphene: a nano-ARPES study
Laser stabilized to a room temperature cavity with AlGaAs coatings reaching 4.2 × 10−17 fractional frequency instability
Waveguide-coupled light emitting devices made of 2D materials
Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 characterizations3 properties6 figures
3 characterizations1 property1 figure
1 characterization2 properties1 figure
1 characterization1 figure
No measurements recorded
No measurements recorded
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SLG-SD cell thickness | 50um | — | |||
| Lattice Spacing | AB stacked gallenene a100 spacing | 0.22nm | — | |||
| Nmr Resonance Frequency | 71Ga resonance | 122MHz | — | |||
| Xrd Space Group | bulk alpha-Ga | Cmca | — | |||
| Bond Length | Ga-Ga distance in a100 monolayer | 0.262nm | — | — | ||
| Spinodal Periodicity | SHG angular response | approximately 180-degree periodicity | — |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-CONTACTED NANOTUBE PHOTODETECTOR
Identifying Contact Barrier Types in Few-Layer MoS2 Devices Using Correlative IV, LBIC, and Bias-Dependent KPFM
Engineering of SnO2–Graphene Oxide Nano-Heterojunctions for Selective Room-temperature Chemical Sensing and Optoelectronic Devices
Combining ultrahigh index with exceptional nonlinearity in resonant transition metal dichalcogenide nanodisks
High-throughput, Non-Destructive, Three-Dimensional Imaging of GaN Threading Dislocations with In-Plane Burgers Vector Component via Phase-Contrast Microscopy
Space Charge Doping Induced Band Modulation in Mono- and Bi-layer Graphene: a nano-ARPES study
Laser stabilized to a room temperature cavity with AlGaAs coatings reaching 4.2 × 10−17 fractional frequency instability
Waveguide-coupled light emitting devices made of 2D materials
Tunable polarization-entangled near-infrared photons from orthogonal GaAs nanowires
