Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas; Rui Xu; Gustavo A. Alvarez; Jin Zhang; Joyce Christiansen-Salameh; Anand B. Puthirath; Kory Burns; Jordan A. Hachtel; Tao Li; Sathvik Ajay Iyengar; Tia Gray; Chenxi Li; Xiang Zhang; Harikishan Kannan; Jacob Elkins; Tymofii S. Pieshkov; Robert Vajtai; A. Glen Birdwell; Mahesh R. Neupane; Elias J. Garratt; Tony G. Ivanov; Bradford B. Pate; Yuji Zhao; Hanyu Zhu; Zhiting Tian; Angel Rubio; Pulickel M. Ajayan

doi:10.1002/adma.202304624

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, Jin Zhang et al.

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, Jin Zhang et al.

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, Jin Zhang et al.

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, Jin Zhang et al.

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, Jin Zhang et al.

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, Jin Zhang et al.

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, Jin Zhang et al.

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Abhijit Biswas, Rui Xu, Gustavo A. Alvarez, Jin Zhang et al.

h-BN thin film grown directly on commercially available n-type 4H-SiC(0001); representative thin film used for XPS, Raman, AFM, TEM/EELS, refractive-index and SHG analysis.

2 preparations7 characterizations9 properties9 figures

ExperimentalBNStudied MaterialSiCSubstrate / Dielectric

Thicker h-BN film on 4H-SiC used for thickness-dependent SHG comparison.

2 preparations1 characterization1 property4 figures

ExperimentalBNStudied MaterialSiCSubstrate / Dielectric

Bare pristine 4H-SiC substrate used as a reference for XPS/VBS, Raman, AFM, refractive index, and SHG comparisons.

4 characterizations3 figures

ReferenceSiCSubstrate / Dielectric

h-BN film grown on sapphire for SHG comparison.

2 preparations1 characterization4 figures

ExperimentalBNStudied MaterialAl₂O₃Substrate / Dielectric

h-BN film grown on GaN for SHG comparison.

2 preparations1 characterization4 figures

ExperimentalBNStudied MaterialGaNSubstrate / Dielectric

h-BN thin film grown directly on commercially available n-type 4H-SiC(0001); representative thin film used for XPS, Raman, AFM, TEM/EELS, refractive-index and SHG analysis.

2 preparations7 characterizations9 properties9 figures

ExperimentalBNStudied MaterialSiCSubstrate / Dielectric

Thicker h-BN film on 4H-SiC used for thickness-dependent SHG comparison.

2 preparations1 characterization1 property4 figures

ExperimentalBNStudied MaterialSiCSubstrate / Dielectric

Bare pristine 4H-SiC substrate used as a reference for XPS/VBS, Raman, AFM, refractive index, and SHG comparisons.

4 characterizations3 figures

ReferenceSiCSubstrate / Dielectric

h-BN film grown on sapphire for SHG comparison.

2 preparations1 characterization4 figures

ExperimentalBNStudied MaterialAl₂O₃Substrate / Dielectric

h-BN film grown on GaN for SHG comparison.

2 preparations1 characterization4 figures

ExperimentalBNStudied MaterialGaNSubstrate / Dielectric

h-BN thin film grown directly on commercially available n-type 4H-SiC(0001); representative thin film used for XPS, Raman, AFM, TEM/EELS, refractive-index and SHG analysis.

2 preparations7 characterizations9 properties9 figures

ExperimentalBNStudied MaterialSiCSubstrate / Dielectric

Thicker h-BN film on 4H-SiC used for thickness-dependent SHG comparison.

2 preparations1 characterization1 property4 figures

ExperimentalBNStudied MaterialSiCSubstrate / Dielectric

Bare pristine 4H-SiC substrate used as a reference for XPS/VBS, Raman, AFM, refractive index, and SHG comparisons.

4 characterizations3 figures

ReferenceSiCSubstrate / Dielectric

h-BN film grown on sapphire for SHG comparison.

2 preparations1 characterization4 figures

ExperimentalBNStudied MaterialAl₂O₃Substrate / Dielectric

h-BN film grown on GaN for SHG comparison.

2 preparations1 characterization4 figures

ExperimentalBNStudied MaterialGaNSubstrate / Dielectric

h-BN thin film grown directly on commercially available n-type 4H-SiC(0001); representative thin film used for XPS, Raman, AFM, TEM/EELS, refractive-index and SHG analysis.

2 preparations7 characterizations9 properties9 figures

ExperimentalBNStudied MaterialSiCSubstrate / Dielectric

Thicker h-BN film on 4H-SiC used for thickness-dependent SHG comparison.

2 preparations1 characterization1 property4 figures

ExperimentalBNStudied MaterialSiCSubstrate / Dielectric

Bare pristine 4H-SiC substrate used as a reference for XPS/VBS, Raman, AFM, refractive index, and SHG comparisons.

4 characterizations3 figures

ReferenceSiCSubstrate / Dielectric

h-BN film grown on sapphire for SHG comparison.

2 preparations1 characterization4 figures

ExperimentalBNStudied MaterialAl₂O₃Substrate / Dielectric

h-BN film grown on GaN for SHG comparison.

2 preparations1 characterization4 figures

ExperimentalBNStudied MaterialGaNSubstrate / Dielectric

Type	Label	Value	Material	Sample	Source
Atomic Ratio	B:N	38.4:38.9	BN	h-BN thin film grown directly on commercially available n-ty	—
Raman Peak	E2g	1360-1380cm⁻¹	BN	h-BN thin film grown directly on commercially available n-ty	—
Afm Lateral Size	triangular-like morphology size	50-100nm	BN	h-BN thin film grown directly on commercially available n-ty	—
Refractive Index	h-BN film refractive index	1.7-2.2	BN	h-BN thin film grown directly on commercially available n-ty	—
Shg Effective Chi2	effective χ(2)	3.3pm/V	BN	h-BN thin film grown directly on commercially available n-ty	—
Shg Effective Chi2	effective χ(2)	1.2pm/V	BN	Thicker h-BN film on 4H-SiC used for thickness-dependent SHG	—
Thermal Conductivity	cross-plane thermal conductivity	—W/mK	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	—	1.9eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	B 1s	190.3eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	N 1s	398.1eV	N₂	—	—
Xps Binding Energy	B 1s	187.5eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Atomic Ratio	—	~1:1 (38.4:38.9 to be precise)	BN	h-BN thin film grown directly on commercially available n-ty	—

Type	Label	Value	Material	Sample	Source
Atomic Ratio	B:N	38.4:38.9	BN	h-BN thin film grown directly on commercially available n-ty	—
Raman Peak	E2g	1360-1380cm⁻¹	BN	h-BN thin film grown directly on commercially available n-ty	—
Afm Lateral Size	triangular-like morphology size	50-100nm	BN	h-BN thin film grown directly on commercially available n-ty	—
Refractive Index	h-BN film refractive index	1.7-2.2	BN	h-BN thin film grown directly on commercially available n-ty	—
Shg Effective Chi2	effective χ(2)	3.3pm/V	BN	h-BN thin film grown directly on commercially available n-ty	—
Shg Effective Chi2	effective χ(2)	1.2pm/V	BN	Thicker h-BN film on 4H-SiC used for thickness-dependent SHG	—
Thermal Conductivity	cross-plane thermal conductivity	—W/mK	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	—	1.9eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	B 1s	190.3eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	N 1s	398.1eV	N₂	—	—
Xps Binding Energy	B 1s	187.5eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Atomic Ratio	—	~1:1 (38.4:38.9 to be precise)	BN	h-BN thin film grown directly on commercially available n-ty	—

Type	Label	Value	Material	Sample	Source
Atomic Ratio	B:N	38.4:38.9	BN	h-BN thin film grown directly on commercially available n-ty	—
Raman Peak	E2g	1360-1380cm⁻¹	BN	h-BN thin film grown directly on commercially available n-ty	—
Afm Lateral Size	triangular-like morphology size	50-100nm	BN	h-BN thin film grown directly on commercially available n-ty	—
Refractive Index	h-BN film refractive index	1.7-2.2	BN	h-BN thin film grown directly on commercially available n-ty	—
Shg Effective Chi2	effective χ(2)	3.3pm/V	BN	h-BN thin film grown directly on commercially available n-ty	—
Shg Effective Chi2	effective χ(2)	1.2pm/V	BN	Thicker h-BN film on 4H-SiC used for thickness-dependent SHG	—
Thermal Conductivity	cross-plane thermal conductivity	—W/mK	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	—	1.9eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	B 1s	190.3eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	N 1s	398.1eV	N₂	—	—
Xps Binding Energy	B 1s	187.5eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Atomic Ratio	—	~1:1 (38.4:38.9 to be precise)	BN	h-BN thin film grown directly on commercially available n-ty	—

Type	Label	Value	Material	Sample	Source
Atomic Ratio	B:N	38.4:38.9	BN	h-BN thin film grown directly on commercially available n-ty	—
Raman Peak	E2g	1360-1380cm⁻¹	BN	h-BN thin film grown directly on commercially available n-ty	—
Afm Lateral Size	triangular-like morphology size	50-100nm	BN	h-BN thin film grown directly on commercially available n-ty	—
Refractive Index	h-BN film refractive index	1.7-2.2	BN	h-BN thin film grown directly on commercially available n-ty	—
Shg Effective Chi2	effective χ(2)	3.3pm/V	BN	h-BN thin film grown directly on commercially available n-ty	—
Shg Effective Chi2	effective χ(2)	1.2pm/V	BN	Thicker h-BN film on 4H-SiC used for thickness-dependent SHG	—
Thermal Conductivity	cross-plane thermal conductivity	—W/mK	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	—	1.9eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	B 1s	190.3eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Binding Energy	N 1s	398.1eV	N₂	—	—
Xps Binding Energy	B 1s	187.5eV	BN	h-BN thin film grown directly on commercially available n-ty	—
Xps Atomic Ratio	—	~1:1 (38.4:38.9 to be precise)	BN	h-BN thin film grown directly on commercially available n-ty	—

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Samples

h-BN thin film grown directly on commercially available n-type 4H-SiC(0001); representative thin film used for XPS, Raman, AFM, TEM/EELS, refractive-index and SHG analysis.

Thicker h-BN film on 4H-SiC used for thickness-dependent SHG comparison.

Bare pristine 4H-SiC substrate used as a reference for XPS/VBS, Raman, AFM, refractive index, and SHG comparisons.

h-BN film grown on sapphire for SHG comparison.

h-BN film grown on GaN for SHG comparison.

Materials

Growth

Processing

Characterization

Properties

Simulations

Samples

h-BN thin film grown directly on commercially available n-type 4H-SiC(0001); representative thin film used for XPS, Raman, AFM, TEM/EELS, refractive-index and SHG analysis.

Thicker h-BN film on 4H-SiC used for thickness-dependent SHG comparison.

Bare pristine 4H-SiC substrate used as a reference for XPS/VBS, Raman, AFM, refractive index, and SHG comparisons.

h-BN film grown on sapphire for SHG comparison.

h-BN film grown on GaN for SHG comparison.

Materials

Growth

Processing

Characterization

Properties

Simulations

Samples

h-BN thin film grown directly on commercially available n-type 4H-SiC(0001); representative thin film used for XPS, Raman, AFM, TEM/EELS, refractive-index and SHG analysis.

Thicker h-BN film on 4H-SiC used for thickness-dependent SHG comparison.

Bare pristine 4H-SiC substrate used as a reference for XPS/VBS, Raman, AFM, refractive index, and SHG comparisons.

h-BN film grown on sapphire for SHG comparison.

h-BN film grown on GaN for SHG comparison.

Materials

Growth

Processing

Characterization

Properties

Simulations

Samples

h-BN thin film grown directly on commercially available n-type 4H-SiC(0001); representative thin film used for XPS, Raman, AFM, TEM/EELS, refractive-index and SHG analysis.

Thicker h-BN film on 4H-SiC used for thickness-dependent SHG comparison.

Bare pristine 4H-SiC substrate used as a reference for XPS/VBS, Raman, AFM, refractive index, and SHG comparisons.

h-BN film grown on sapphire for SHG comparison.

h-BN film grown on GaN for SHG comparison.

Materials

Growth

Processing

Characterization

Properties

Simulations