Abstract

The paper proposes a theoretical approach to modeling the key characteristics of highly efficient gallium arsenide-based solar cells, using a one-dimensional solar-cell model. Recombination mechanisms considered include radiative recombination, interband Auger recombination, Shockley–Reed–Hall recombination, surface recombination, recombination in the space-charge region, and recombination along the perimeter. The model also accounts for GaAs band-gap narrowing and photon recycling, and uses absorption analysis at different doping levels of gallium arsenide. The approach is applied to experimental external quantum efficiency data from the literature and gives good agreement between experiment and theory.

Abstract

The paper proposes a theoretical approach to modeling the key characteristics of highly efficient gallium arsenide-based solar cells, using a one-dimensional solar-cell model. Recombination mechanisms considered include radiative recombination, interband Auger recombination, Shockley–Reed–Hall recombination, surface recombination, recombination in the space-charge region, and recombination along the perimeter. The model also accounts for GaAs band-gap narrowing and photon recycling, and uses absorption analysis at different doping levels of gallium arsenide. The approach is applied to experimental external quantum efficiency data from the literature and gives good agreement between experiment and theory.

Abstract

The paper proposes a theoretical approach to modeling the key characteristics of highly efficient gallium arsenide-based solar cells, using a one-dimensional solar-cell model. Recombination mechanisms considered include radiative recombination, interband Auger recombination, Shockley–Reed–Hall recombination, surface recombination, recombination in the space-charge region, and recombination along the perimeter. The model also accounts for GaAs band-gap narrowing and photon recycling, and uses absorption analysis at different doping levels of gallium arsenide. The approach is applied to experimental external quantum efficiency data from the literature and gives good agreement between experiment and theory.

Abstract

The paper proposes a theoretical approach to modeling the key characteristics of highly efficient gallium arsenide-based solar cells, using a one-dimensional solar-cell model. Recombination mechanisms considered include radiative recombination, interband Auger recombination, Shockley–Reed–Hall recombination, surface recombination, recombination in the space-charge region, and recombination along the perimeter. The model also accounts for GaAs band-gap narrowing and photon recycling, and uses absorption analysis at different doping levels of gallium arsenide. The approach is applied to experimental external quantum efficiency data from the literature and gives good agreement between experiment and theory.