Abstract

We consider longitudinal electronic transport in a graphene monolayer, with an external in-plane magnetic field parallel to the electric field, and in the presence of extrinsic spatially fluctuating spin-orbit Rashba interaction. Our main interest is focused on the longitudinal magnetoresistance. We show, that for the spin-orbit correlation length ξ between 10⁻⁶ and 10⁻⁵ cm, scattering processes on the Rashba spin-orbit fluctuations lead to a negative magnetoresistance. For smaller correlation lengths, ξ < 10⁻⁶ cm, we find a small and positive magnetoresistance. The description is based on an effective model of graphene Hamiltonian, that is valid for low energy states around the Dirac points. In turn, to derive the electron scattering rate and the longitudinal conductivity and magnetoresistivity, we employ the linear response theory and Green’s function formalism.

Abstract

We consider longitudinal electronic transport in a graphene monolayer, with an external in-plane magnetic field parallel to the electric field, and in the presence of extrinsic spatially fluctuating spin-orbit Rashba interaction. Our main interest is focused on the longitudinal magnetoresistance. We show, that for the spin-orbit correlation length ξ between 10⁻⁶ and 10⁻⁵ cm, scattering processes on the Rashba spin-orbit fluctuations lead to a negative magnetoresistance. For smaller correlation lengths, ξ < 10⁻⁶ cm, we find a small and positive magnetoresistance. The description is based on an effective model of graphene Hamiltonian, that is valid for low energy states around the Dirac points. In turn, to derive the electron scattering rate and the longitudinal conductivity and magnetoresistivity, we employ the linear response theory and Green’s function formalism.

Abstract

We consider longitudinal electronic transport in a graphene monolayer, with an external in-plane magnetic field parallel to the electric field, and in the presence of extrinsic spatially fluctuating spin-orbit Rashba interaction. Our main interest is focused on the longitudinal magnetoresistance. We show, that for the spin-orbit correlation length ξ between 10⁻⁶ and 10⁻⁵ cm, scattering processes on the Rashba spin-orbit fluctuations lead to a negative magnetoresistance. For smaller correlation lengths, ξ < 10⁻⁶ cm, we find a small and positive magnetoresistance. The description is based on an effective model of graphene Hamiltonian, that is valid for low energy states around the Dirac points. In turn, to derive the electron scattering rate and the longitudinal conductivity and magnetoresistivity, we employ the linear response theory and Green’s function formalism.

Abstract

We consider longitudinal electronic transport in a graphene monolayer, with an external in-plane magnetic field parallel to the electric field, and in the presence of extrinsic spatially fluctuating spin-orbit Rashba interaction. Our main interest is focused on the longitudinal magnetoresistance. We show, that for the spin-orbit correlation length ξ between 10⁻⁶ and 10⁻⁵ cm, scattering processes on the Rashba spin-orbit fluctuations lead to a negative magnetoresistance. For smaller correlation lengths, ξ < 10⁻⁶ cm, we find a small and positive magnetoresistance. The description is based on an effective model of graphene Hamiltonian, that is valid for low energy states around the Dirac points. In turn, to derive the electron scattering rate and the longitudinal conductivity and magnetoresistivity, we employ the linear response theory and Green’s function formalism.