Kondo cloud conductance in cavity-coupled quantum dots with asymmetric barriers

Paper details

Research paper

Experimental Characterization

D. Fossion, V. Champain, S. Mohapatra, A. Cavanna et al.

arXiv·2025·10.5281/zenodo·arXiv:2511.07232

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 characterization8 properties5 figures

ExperimentalGaAs/AlGaAs heterostructureStudied Material

GaAs/AlGaAs heterostructure

Studied Material

Also known as

GaAs/AlGaAs quantum dotGaAs/AlGaAs 2DEG

studied material

Transport

Kondo cloud conductance in cavity-coupled quantum dots with asymmetric barriers | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Electron Density	2DEG electron density	250000000000cm⁻²	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Electron Mobility	2DEG electron mobility	2500000cm²/Vs	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Length	Fabry-Pérot cavity length	3.2um	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy Spacing	cavity level spacing	150µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Temperature	Kondo screening length	1.7µm	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Temperature	Kondo temperature	1K	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy	charging energy U	500µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy	total tunneling rate Γ	400µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—

Type	Label	Value	Material	Sample	Source
Electron Density	2DEG electron density	250000000000cm⁻²	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Electron Mobility	2DEG electron mobility	2500000cm²/Vs	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Length	Fabry-Pérot cavity length	3.2um	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy Spacing	cavity level spacing	150µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Temperature	Kondo screening length	1.7µm	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Temperature	Kondo temperature	1K	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy	charging energy U	500µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy	total tunneling rate Γ	400µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—

Type	Label	Value	Material	Sample	Source
Electron Density	2DEG electron density	250000000000cm⁻²	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Electron Mobility	2DEG electron mobility	2500000cm²/Vs	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Length	Fabry-Pérot cavity length	3.2um	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy Spacing	cavity level spacing	150µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Temperature	Kondo screening length	1.7µm	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Temperature	Kondo temperature	1K	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy	charging energy U	500µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy	total tunneling rate Γ	400µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—

Type	Label	Value	Material	Sample	Source
Electron Density	2DEG electron density	250000000000cm⁻²	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Electron Mobility	2DEG electron mobility	2500000cm²/Vs	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Length	Fabry-Pérot cavity length	3.2um	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy Spacing	cavity level spacing	150µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Temperature	Kondo screening length	1.7µm	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Temperature	Kondo temperature	1K	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy	charging energy U	500µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—
Energy	total tunneling rate Γ	400µeV	GaAs/AlGaAs heterostructure	Electrostatically defined quantum dot with a coupled Fabry-P	—