Research paper
Experimental GrowthExperimental CharacterizationComputational DFTLoading the Atlas literature map
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations7 properties3 figures
3 preparations4 characterizations9 properties4 figures
3 preparations2 characterizations6 properties3 figures
1 preparation2 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| XRD Peak | unit-cell periodicity | 2.01nm | — | |||
| XRD Peak | unit-cell periodicity | 1.57nm | — | |||
| XRD Peak | Br-pair spacing | 0.48nm | — | |||
| XRD Peak | Br-pair spacing in FeBr₂ unit | 0.38nm | — | |||
| XRD Peak | FeBr₂ lattice periodicity | 0.37nm | — | |||
| Substrate Thickness | Au lattice constant | 4.08angstrom | — | |||
| Substrate Thickness | Au lattice constant | 4.21angstrom | — | |||
| Fet Threshold Voltage | occupied-state feature | -2.1V | — | |||
| Fet Threshold Voltage | unoccupied-state feature | 2.2V | — | |||
| Fet Threshold Voltage | occupied-state feature | -1.45V | — | |||
| Fet Threshold Voltage | occupied-state shoulder | -1.6V | — | |||
| Fet Threshold Voltage | unoccupied-state feature | 0.5V | — | |||
| Fet Threshold Voltage | semiconducting gap | 1.6eV | — | |||
| Fet Threshold Voltage | Au(111) surface state shift | 0.4eV | — | |||
| Fet Threshold Voltage | Au(111) surface state | -0.35eV | — | |||
| Fet Threshold Voltage | average island lateral size | 43nm | — | |||
| Fet Threshold Voltage | average island lateral size | 24nm | — | |||
| Xps Binding Energy Shift | Fe 2p3/2 | 709.5eV | — | |||
| Xps Binding Energy Shift | Fe 2p3/2 | 715eV | — | |||
| Xps Binding Energy | Br 3d5/2 | 69eV | — | |||
| Xps Binding Energy | C 1s | 283.48eV | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations7 properties3 figures
3 preparations4 characterizations9 properties4 figures
3 preparations2 characterizations6 properties3 figures
1 preparation2 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| XRD Peak | unit-cell periodicity | 2.01nm | — | |||
| XRD Peak | unit-cell periodicity | 1.57nm | — | |||
| XRD Peak | Br-pair spacing | 0.48nm | — | |||
| XRD Peak | Br-pair spacing in FeBr₂ unit | 0.38nm | — | |||
| XRD Peak | FeBr₂ lattice periodicity | 0.37nm | — | |||
| Substrate Thickness | Au lattice constant | 4.08angstrom | — | |||
| Substrate Thickness | Au lattice constant | 4.21angstrom | — | |||
| Fet Threshold Voltage | occupied-state feature | -2.1V | — | |||
| Fet Threshold Voltage | unoccupied-state feature | 2.2V | — | |||
| Fet Threshold Voltage | occupied-state feature | -1.45V | — | |||
| Fet Threshold Voltage | occupied-state shoulder | -1.6V | — | |||
| Fet Threshold Voltage | unoccupied-state feature | 0.5V | — | |||
| Fet Threshold Voltage | semiconducting gap | 1.6eV | — | |||
| Fet Threshold Voltage | Au(111) surface state shift | 0.4eV | — | |||
| Fet Threshold Voltage | Au(111) surface state | -0.35eV | — | |||
| Fet Threshold Voltage | average island lateral size | 43nm | — | |||
| Fet Threshold Voltage | average island lateral size | 24nm | — | |||
| Xps Binding Energy Shift | Fe 2p3/2 | 709.5eV | — | |||
| Xps Binding Energy Shift | Fe 2p3/2 | 715eV | — | |||
| Xps Binding Energy | Br 3d5/2 | 69eV | — | |||
| Xps Binding Energy | C 1s | 283.48eV | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations7 properties3 figures
3 preparations4 characterizations9 properties4 figures
3 preparations2 characterizations6 properties3 figures
1 preparation2 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| XRD Peak | unit-cell periodicity | 2.01nm | — | |||
| XRD Peak | unit-cell periodicity | 1.57nm | — | |||
| XRD Peak | Br-pair spacing | 0.48nm | — | |||
| XRD Peak | Br-pair spacing in FeBr₂ unit | 0.38nm | — | |||
| XRD Peak | FeBr₂ lattice periodicity | 0.37nm | — | |||
| Substrate Thickness | Au lattice constant | 4.08angstrom | — | |||
| Substrate Thickness | Au lattice constant | 4.21angstrom | — | |||
| Fet Threshold Voltage | occupied-state feature | -2.1V | — | |||
| Fet Threshold Voltage | unoccupied-state feature | 2.2V | — | |||
| Fet Threshold Voltage | occupied-state feature | -1.45V | — | |||
| Fet Threshold Voltage | occupied-state shoulder | -1.6V | — | |||
| Fet Threshold Voltage | unoccupied-state feature | 0.5V | — | |||
| Fet Threshold Voltage | semiconducting gap | 1.6eV | — | |||
| Fet Threshold Voltage | Au(111) surface state shift | 0.4eV | — | |||
| Fet Threshold Voltage | Au(111) surface state | -0.35eV | — | |||
| Fet Threshold Voltage | average island lateral size | 43nm | — | |||
| Fet Threshold Voltage | average island lateral size | 24nm | — | |||
| Xps Binding Energy Shift | Fe 2p3/2 | 709.5eV | — | |||
| Xps Binding Energy Shift | Fe 2p3/2 | 715eV | — | |||
| Xps Binding Energy | Br 3d5/2 | 69eV | — | |||
| Xps Binding Energy | C 1s | 283.48eV | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations2 characterizations7 properties3 figures
3 preparations4 characterizations9 properties4 figures
3 preparations2 characterizations6 properties3 figures
1 preparation2 characterizations2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| XRD Peak | unit-cell periodicity | 2.01nm | — | |||
| XRD Peak | unit-cell periodicity | 1.57nm | — | |||
| XRD Peak | Br-pair spacing | 0.48nm | — | |||
| XRD Peak | Br-pair spacing in FeBr₂ unit | 0.38nm | — | |||
| XRD Peak | FeBr₂ lattice periodicity | 0.37nm | — | |||
| Substrate Thickness | Au lattice constant | 4.08angstrom | — | |||
| Substrate Thickness | Au lattice constant | 4.21angstrom | — | |||
| Fet Threshold Voltage | occupied-state feature | -2.1V | — | |||
| Fet Threshold Voltage | unoccupied-state feature | 2.2V | — | |||
| Fet Threshold Voltage | occupied-state feature | -1.45V | — | |||
| Fet Threshold Voltage | occupied-state shoulder | -1.6V | — | |||
| Fet Threshold Voltage | unoccupied-state feature | 0.5V | — | |||
| Fet Threshold Voltage | semiconducting gap | 1.6eV | — | |||
| Fet Threshold Voltage | Au(111) surface state shift | 0.4eV | — | |||
| Fet Threshold Voltage | Au(111) surface state | -0.35eV | — | |||
| Fet Threshold Voltage | average island lateral size | 43nm | — | |||
| Fet Threshold Voltage | average island lateral size | 24nm | — | |||
| Xps Binding Energy Shift | Fe 2p3/2 | 709.5eV | — | |||
| Xps Binding Energy Shift | Fe 2p3/2 | 715eV | — | |||
| Xps Binding Energy | Br 3d5/2 | 69eV | — | |||
| Xps Binding Energy | C 1s | 283.48eV | — |