Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Guanjian Hu; Jijun Huang; Bing Huang; Song Li

doi:10.48550/arXiv.2605.20655

Paper

Atlas literature

Research paper

Computational DFTComputed PhononComputed PLTheoretical

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Guanjian Hu, Jijun Huang, Bing Huang, Song Li

arXiv·2026·arXiv:2605.20655

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Four-layer hBN supercell containing a coupled C_B-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

11 properties

Simulated Supercell Dfth-BNStudied MaterialC_B-ON defect pairStudied Material

Four-layer hBN supercell containing a coupled C_N-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

4 properties

Simulated Supercell Dfth-BNStudied MaterialC_N-ON defect pairStudied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride | Matter42 Literature

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Samples

Four-layer hBN supercell containing a coupled CB-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled CN-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Why these are connected

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Samples

Four-layer hBN supercell containing a coupled CB-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled CN-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Why these are connected

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Samples

Four-layer hBN supercell containing a coupled CB-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled CN-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Why these are connected

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Samples

Four-layer hBN supercell containing a coupled CB-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled CN-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Why these are connected

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Samples

Four-layer hBN supercell containing a coupled CB-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled CN-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Why these are connected

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Samples

Four-layer hBN supercell containing a coupled CB-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled CN-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Why these are connected

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Samples

Four-layer hBN supercell containing a coupled CB-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled CN-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Why these are connected

Interacting donor-acceptor pairs as the origin of coupled spin-optical signals in hexagonal boron nitride

Samples

Four-layer hBN supercell containing a coupled CB-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled CN-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Why these are connected

Four-layer hBN supercell containing a coupled C_B-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled C_N-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Four-layer hBN supercell containing a coupled C_B-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled C_N-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Four-layer hBN supercell containing a coupled C_B-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled C_N-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Four-layer hBN supercell containing a coupled C_B-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled C_N-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Four-layer hBN supercell containing a coupled C_B-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled C_N-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Four-layer hBN supercell containing a coupled C_B-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled C_N-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Four-layer hBN supercell containing a coupled C_B-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled C_N-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.

Four-layer hBN supercell containing a coupled C_B-ON defect pair used to study charge transfer, optical transitions, phonon sidebands, and spin properties across different separations and charge states.

Four-layer hBN supercell containing a coupled C_N-ON defect pair used to model donor-acceptor coupling, charge transfer, optical transitions, and ODMR response as the defect separation changes.