Abstract

Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However, existing techniques have not achieved strain in 2D materials that is simultaneously high in magnitude (>1%), stable over long periods, and spatially programmable, meaning the strain level can be deterministically engineered across different regions of a single 2D layer. Here, we apply spatially programmable biaxial strain (εb) up to 2.2% with spatial resolution of 0.13 %εb µm⁻¹ in monolayer MoS₂ via conformal transfer onto patterned substrates fabricated using two-photon lithography. The induced strain is stable for months and enables local band gap tuning of ~0.4 eV in monolayer MoS₂, ~25% of its intrinsic band gap. We further extend the approach to bilayer WS₂–MoS₂ heterostructures.

Abstract

Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However, existing techniques have not achieved strain in 2D materials that is simultaneously high in magnitude (>1%), stable over long periods, and spatially programmable, meaning the strain level can be deterministically engineered across different regions of a single 2D layer. Here, we apply spatially programmable biaxial strain (εb) up to 2.2% with spatial resolution of 0.13 %εb µm⁻¹ in monolayer MoS₂ via conformal transfer onto patterned substrates fabricated using two-photon lithography. The induced strain is stable for months and enables local band gap tuning of ~0.4 eV in monolayer MoS₂, ~25% of its intrinsic band gap. We further extend the approach to bilayer WS₂–MoS₂ heterostructures.

Abstract

Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However, existing techniques have not achieved strain in 2D materials that is simultaneously high in magnitude (>1%), stable over long periods, and spatially programmable, meaning the strain level can be deterministically engineered across different regions of a single 2D layer. Here, we apply spatially programmable biaxial strain (εb) up to 2.2% with spatial resolution of 0.13 %εb µm⁻¹ in monolayer MoS₂ via conformal transfer onto patterned substrates fabricated using two-photon lithography. The induced strain is stable for months and enables local band gap tuning of ~0.4 eV in monolayer MoS₂, ~25% of its intrinsic band gap. We further extend the approach to bilayer WS₂–MoS₂ heterostructures.

Abstract

Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However, existing techniques have not achieved strain in 2D materials that is simultaneously high in magnitude (>1%), stable over long periods, and spatially programmable, meaning the strain level can be deterministically engineered across different regions of a single 2D layer. Here, we apply spatially programmable biaxial strain (εb) up to 2.2% with spatial resolution of 0.13 %εb µm⁻¹ in monolayer MoS₂ via conformal transfer onto patterned substrates fabricated using two-photon lithography. The induced strain is stable for months and enables local band gap tuning of ~0.4 eV in monolayer MoS₂, ~25% of its intrinsic band gap. We further extend the approach to bilayer WS₂–MoS₂ heterostructures.