Research paper
Experimental CharacterizationComputational Multiscale| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | D | 1345cm⁻¹ | — | |||
| Raman Peak | G | 1590cm⁻¹ | — | |||
| Substrate Thickness | upper cladding thickness | 2.3um | — | |||
| Substrate Thickness | SiN waveguide thickness | 0.72um | — | |||
| Substrate Thickness | GO layer thickness | 2nm | — | |||
| Substrate Thickness | GO layer thickness | 4nm | — | |||
| Substrate Thickness | GO layer thickness | 6nm | — | |||
| Optical Band Gap | GO optical bandgap range | ~2.1-3.6eV | — | |||
| Refractive Index | n | 1.972 | — | |||
| Refractive Index | n | 1.99 | — | |||
| Effective Refractive Index | neff, TE | 1.784 | — | |||
| Effective Refractive Index | neff, TM | 1.713 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | D | 1345cm⁻¹ | — | |||
| Raman Peak | G | 1590cm⁻¹ | — | |||
| Substrate Thickness | upper cladding thickness | 2.3um | — | |||
| Substrate Thickness | SiN waveguide thickness | 0.72um | — | |||
| Substrate Thickness | GO layer thickness | 2nm | — | |||
| Substrate Thickness | GO layer thickness | 4nm | — | |||
| Substrate Thickness | GO layer thickness | 6nm | — | |||
| Optical Band Gap | GO optical bandgap range | ~2.1-3.6eV | — | |||
| Refractive Index | n | 1.972 | — | |||
| Refractive Index | n | 1.99 | — | |||
| Effective Refractive Index | neff, TE | 1.784 | — | |||
| Effective Refractive Index | neff, TM | 1.713 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | D | 1345cm⁻¹ | — | |||
| Raman Peak | G | 1590cm⁻¹ | — | |||
| Substrate Thickness | upper cladding thickness | 2.3um | — | |||
| Substrate Thickness | SiN waveguide thickness | 0.72um | — | |||
| Substrate Thickness | GO layer thickness | 2nm | — | |||
| Substrate Thickness | GO layer thickness | 4nm | — | |||
| Substrate Thickness | GO layer thickness | 6nm | — | |||
| Optical Band Gap | GO optical bandgap range | ~2.1-3.6eV | — | |||
| Refractive Index | n | 1.972 | — | |||
| Refractive Index | n | 1.99 | — | |||
| Effective Refractive Index | neff, TE | 1.784 | — | |||
| Effective Refractive Index | neff, TM | 1.713 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Peak | D | 1345cm⁻¹ | — | |||
| Raman Peak | G | 1590cm⁻¹ | — | |||
| Substrate Thickness | upper cladding thickness | 2.3um | — | |||
| Substrate Thickness | SiN waveguide thickness | 0.72um | — | |||
| Substrate Thickness | GO layer thickness | 2nm | — | |||
| Substrate Thickness | GO layer thickness | 4nm | — | |||
| Substrate Thickness | GO layer thickness | 6nm | — | |||
| Optical Band Gap | GO optical bandgap range | ~2.1-3.6eV | — | |||
| Refractive Index | n | 1.972 | — | |||
| Refractive Index | n | 1.99 | — | |||
| Effective Refractive Index | neff, TE | 1.784 | — | |||
| Effective Refractive Index | neff, TM | 1.713 | — |