Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Idealized gate-defined Bernal bilayer graphene superlattice device unit cell used for tight-binding atomistic band-structure and conductance simulations; includes quantum-dot puddles and valley-helical point contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Idealized gate-defined Bernal bilayer graphene superlattice device unit cell used for tight-binding atomistic band-structure and conductance simulations; includes quantum-dot puddles and valley-helical point contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Idealized gate-defined Bernal bilayer graphene superlattice device unit cell used for tight-binding atomistic band-structure and conductance simulations; includes quantum-dot puddles and valley-helical point contacts.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Idealized gate-defined Bernal bilayer graphene superlattice device unit cell used for tight-binding atomistic band-structure and conductance simulations; includes quantum-dot puddles and valley-helical point contacts.
Tight-binding atomistic simulations of a repeating unit cell and effective low-energy lattice modeling using the tangent fermions approach; band structure, inverse participation ratio, valley polarization, and conductance calculated for 1D and discussed for 2D gate-defined geometries.KwantMeanFi
Tight-binding atomistic simulations of a repeating unit cell and effective low-energy lattice modeling using the tangent fermions approach; band structure, inverse participation ratio, valley polarization, and conductance calculated for 1D and discussed for 2D gate-defined geometries.KwantMeanFi
Tight-binding atomistic simulations of a repeating unit cell and effective low-energy lattice modeling using the tangent fermions approach; band structure, inverse participation ratio, valley polarization, and conductance calculated for 1D and discussed for 2D gate-defined geometries.KwantMeanFi
Tight-binding atomistic simulations of a repeating unit cell and effective low-energy lattice modeling using the tangent fermions approach; band structure, inverse participation ratio, valley polarization, and conductance calculated for 1D and discussed for 2D gate-defined geometries.KwantMeanFi
