Research paper
TheoreticalComputational DFT| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Tight Binding Hopping Parameter | t1 | -4.08eV | — | |||
| Tight Binding Hopping Parameter | t2 | 0.93eV | — | |||
| Tight Binding Hopping Parameter | t3 | 0.56eV | — | |||
| Van Hove Energy Offset | EVH - ED | 1.5eV | — |
The role of stacking and strain in mean-field magnetic moments of multilayer graphene
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Tight Binding Hopping Parameter | t1 | -4.08eV | — | |||
| Tight Binding Hopping Parameter | t2 | 0.93eV | — | |||
| Tight Binding Hopping Parameter | t3 | 0.56eV | — | |||
| Van Hove Energy Offset | EVH - ED | 1.5eV | — |
The role of stacking and strain in mean-field magnetic moments of multilayer graphene
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Tight Binding Hopping Parameter | t1 | -4.08eV | — | |||
| Tight Binding Hopping Parameter | t2 | 0.93eV | — | |||
| Tight Binding Hopping Parameter | t3 | 0.56eV | — | |||
| Van Hove Energy Offset | EVH - ED | 1.5eV | — |
The role of stacking and strain in mean-field magnetic moments of multilayer graphene
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Tight Binding Hopping Parameter | t1 | -4.08eV | — | |||
| Tight Binding Hopping Parameter | t2 | 0.93eV | — | |||
| Tight Binding Hopping Parameter | t3 | 0.56eV | — | |||
| Van Hove Energy Offset | EVH - ED | 1.5eV | — |
The role of stacking and strain in mean-field magnetic moments of multilayer graphene