Research paper
Experimental CharacterizationTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Conductance | insulating-state conductance | 0.1-10µS | — | |||
| Fet Activation Gap | gap D₁ | 21meV | — | |||
| Fet Activation Gap | gap D₁ | 16.5meV | — | |||
| Fet Activation Gap | small gap D₂ | 2.6meV | — | |||
| Fet Activation Gap | small gap D₂ | 1.4meV | — | |||
| Fet Activation Gap | fractional-state activation gap | ~1meV | — | |||
| Fet Activation Gap | thermal activation onset | ~10K | — | |||
| Fet Magnetic Transition Field | gap closing/opening crossover field | 8T | — | |||
| Fet Magnetic Transition Field | maximum conductance field | 10T | — | |||
| Fet Energy Scale | valley polarization energy scale | ~1meV | — | |||
| Twist Angle | device D₁ twist angle | 1.32deg | — | — | ||
| Twist Angle | device D₂ twist angle | 1.59deg | — | |||
| Unit Cell Area | effective unit cell area | 1.94e-16m² | — | |||
| Unit Cell Area | moire unit cell area | 6.8e-17m² | — | |||
| Unit Cell Area Ratio | Ae/A | 2.85 | — | |||
| Count Observed Filling States | dominant fractional filling states | 4 | — |
Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Conductance | insulating-state conductance | 0.1-10µS | — | |||
| Fet Activation Gap | gap D₁ | 21meV | — | |||
| Fet Activation Gap | gap D₁ | 16.5meV | — | |||
| Fet Activation Gap | small gap D₂ | 2.6meV | — | |||
| Fet Activation Gap | small gap D₂ | 1.4meV | — | |||
| Fet Activation Gap | fractional-state activation gap | ~1meV | — | |||
| Fet Activation Gap | thermal activation onset | ~10K | — | |||
| Fet Magnetic Transition Field | gap closing/opening crossover field | 8T | — | |||
| Fet Magnetic Transition Field | maximum conductance field | 10T | — | |||
| Fet Energy Scale | valley polarization energy scale | ~1meV | — | |||
| Twist Angle | device D₁ twist angle | 1.32deg | — | — | ||
| Twist Angle | device D₂ twist angle | 1.59deg | — | |||
| Unit Cell Area | effective unit cell area | 1.94e-16m² | — | |||
| Unit Cell Area | moire unit cell area | 6.8e-17m² | — | |||
| Unit Cell Area Ratio | Ae/A | 2.85 | — | |||
| Count Observed Filling States | dominant fractional filling states | 4 | — |
Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Conductance | insulating-state conductance | 0.1-10µS | — | |||
| Fet Activation Gap | gap D₁ | 21meV | — | |||
| Fet Activation Gap | gap D₁ | 16.5meV | — | |||
| Fet Activation Gap | small gap D₂ | 2.6meV | — | |||
| Fet Activation Gap | small gap D₂ | 1.4meV | — | |||
| Fet Activation Gap | fractional-state activation gap | ~1meV | — | |||
| Fet Activation Gap | thermal activation onset | ~10K | — | |||
| Fet Magnetic Transition Field | gap closing/opening crossover field | 8T | — | |||
| Fet Magnetic Transition Field | maximum conductance field | 10T | — | |||
| Fet Energy Scale | valley polarization energy scale | ~1meV | — | |||
| Twist Angle | device D₁ twist angle | 1.32deg | — | — | ||
| Twist Angle | device D₂ twist angle | 1.59deg | — | |||
| Unit Cell Area | effective unit cell area | 1.94e-16m² | — | |||
| Unit Cell Area | moire unit cell area | 6.8e-17m² | — | |||
| Unit Cell Area Ratio | Ae/A | 2.85 | — | |||
| Count Observed Filling States | dominant fractional filling states | 4 | — |
Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Conductance | insulating-state conductance | 0.1-10µS | — | |||
| Fet Activation Gap | gap D₁ | 21meV | — | |||
| Fet Activation Gap | gap D₁ | 16.5meV | — | |||
| Fet Activation Gap | small gap D₂ | 2.6meV | — | |||
| Fet Activation Gap | small gap D₂ | 1.4meV | — | |||
| Fet Activation Gap | fractional-state activation gap | ~1meV | — | |||
| Fet Activation Gap | thermal activation onset | ~10K | — | |||
| Fet Magnetic Transition Field | gap closing/opening crossover field | 8T | — | |||
| Fet Magnetic Transition Field | maximum conductance field | 10T | — | |||
| Fet Energy Scale | valley polarization energy scale | ~1meV | — | |||
| Twist Angle | device D₁ twist angle | 1.32deg | — | — | ||
| Twist Angle | device D₂ twist angle | 1.59deg | — | |||
| Unit Cell Area | effective unit cell area | 1.94e-16m² | — | |||
| Unit Cell Area | moire unit cell area | 6.8e-17m² | — | |||
| Unit Cell Area Ratio | Ae/A | 2.85 | — | |||
| Count Observed Filling States | dominant fractional filling states | 4 | — |
Room-Temperature Plasmon-Assisted Resonant THz Detection in Single-layer Graphene Transistors