Research paperExperimental CharacterizationDiverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral grapheneNaitian Liu, Zhangyuan Chen, Jing Ding, Wenqiang Zhou et al.2025·10.48550/arxiv.2507.11347·arXiv:2507.11347AbstractQuantum anomalous Hall (QAH) insulators with high Chern number enable multiple dissipationless edge channels for low-power electronics. The paper reports multiple high-Chern-number QAH insulators, including C=3, 5, 6, and 7, in twisted monolayer-rhombohedral pentalayer graphene. At twist angles around 1.40°, a QAH state with C=5 is observed at one electron per moiré unit cell and persists up to 2 K. Incommensurate QAH states with C=5, 6, and 7 emerge at partial fillings, and at 0.89° twist angle, Chern insulators with C=3 and C=6 appear at two and three electrons per moiré unit cell, respectively.Read more
Device D1: twisted monolayer-rhombohedral pentalayer graphene moiré superlattice measured in transport.1 characterization10 properties2 figuresExperimentalCStudied Materialh-BNSubstrate / DielectricExpand
Device D2: twisted monolayer-rhombohedral pentalayer graphene moiré superlattice measured in transport.1 characterization3 properties1 figureExperimentalCStudied Materialh-BNSubstrate / DielectricExpand
Research paperExperimental CharacterizationDiverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral grapheneNaitian Liu, Zhangyuan Chen, Jing Ding, Wenqiang Zhou et al.2025·10.48550/arxiv.2507.11347·arXiv:2507.11347AbstractQuantum anomalous Hall (QAH) insulators with high Chern number enable multiple dissipationless edge channels for low-power electronics. The paper reports multiple high-Chern-number QAH insulators, including C=3, 5, 6, and 7, in twisted monolayer-rhombohedral pentalayer graphene. At twist angles around 1.40°, a QAH state with C=5 is observed at one electron per moiré unit cell and persists up to 2 K. Incommensurate QAH states with C=5, 6, and 7 emerge at partial fillings, and at 0.89° twist angle, Chern insulators with C=3 and C=6 appear at two and three electrons per moiré unit cell, respectively.Read more
Device D1: twisted monolayer-rhombohedral pentalayer graphene moiré superlattice measured in transport.1 characterization10 properties2 figuresExperimentalCStudied Materialh-BNSubstrate / DielectricExpand
Device D2: twisted monolayer-rhombohedral pentalayer graphene moiré superlattice measured in transport.1 characterization3 properties1 figureExperimentalCStudied Materialh-BNSubstrate / DielectricExpand
Research paperExperimental CharacterizationDiverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral grapheneNaitian Liu, Zhangyuan Chen, Jing Ding, Wenqiang Zhou et al.2025·10.48550/arxiv.2507.11347·arXiv:2507.11347AbstractQuantum anomalous Hall (QAH) insulators with high Chern number enable multiple dissipationless edge channels for low-power electronics. The paper reports multiple high-Chern-number QAH insulators, including C=3, 5, 6, and 7, in twisted monolayer-rhombohedral pentalayer graphene. At twist angles around 1.40°, a QAH state with C=5 is observed at one electron per moiré unit cell and persists up to 2 K. Incommensurate QAH states with C=5, 6, and 7 emerge at partial fillings, and at 0.89° twist angle, Chern insulators with C=3 and C=6 appear at two and three electrons per moiré unit cell, respectively.Read more
Device D1: twisted monolayer-rhombohedral pentalayer graphene moiré superlattice measured in transport.1 characterization10 properties2 figuresExperimentalCStudied Materialh-BNSubstrate / DielectricExpand
Device D2: twisted monolayer-rhombohedral pentalayer graphene moiré superlattice measured in transport.1 characterization3 properties1 figureExperimentalCStudied Materialh-BNSubstrate / DielectricExpand
Research paperExperimental CharacterizationDiverse high-Chern-number quantum anomalous Hall insulators in twisted rhombohedral grapheneNaitian Liu, Zhangyuan Chen, Jing Ding, Wenqiang Zhou et al.2025·10.48550/arxiv.2507.11347·arXiv:2507.11347AbstractQuantum anomalous Hall (QAH) insulators with high Chern number enable multiple dissipationless edge channels for low-power electronics. The paper reports multiple high-Chern-number QAH insulators, including C=3, 5, 6, and 7, in twisted monolayer-rhombohedral pentalayer graphene. At twist angles around 1.40°, a QAH state with C=5 is observed at one electron per moiré unit cell and persists up to 2 K. Incommensurate QAH states with C=5, 6, and 7 emerge at partial fillings, and at 0.89° twist angle, Chern insulators with C=3 and C=6 appear at two and three electrons per moiré unit cell, respectively.Read more
Device D1: twisted monolayer-rhombohedral pentalayer graphene moiré superlattice measured in transport.1 characterization10 properties2 figuresExperimentalCStudied Materialh-BNSubstrate / DielectricExpand
Device D2: twisted monolayer-rhombohedral pentalayer graphene moiré superlattice measured in transport.1 characterization3 properties1 figureExperimentalCStudied Materialh-BNSubstrate / DielectricExpand
