Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide

Paper details

Research paper

Experimental Characterization

Joop Hendriks, Carmem M. Gilardoni, Chris Adambukulam, Arne Laucht et al.

arXiv preprint·2022·10.48550/arxiv.2210.09942·arXiv:2210.09942

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

4 characterizations5 properties3 figures

ExperimentalV:4H-SiCStudied MaterialSiCSubstrate / Dielectric29SiAdsorbate Species51VStudied Material

vanadium impurity in 4H-SiC

V:4H-SiC

Studied Material

Also known as

V defect in silicon carbidevanadium color center

Variables

defect= substitutional V impurity

studied material

Related documents with shared materials, methods, properties, or citations.

Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Other	hyperfine coupling magnitude A	9.7MHz	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	driven dephasing time	1.8us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	driven dephasing time	2.1us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	free-precession dephasing time T*2	7.2us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	Hahn-echo free precession time lower bound	26us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—

Properties

Type	Label	Value	Material	Sample	Source
Other	hyperfine coupling magnitude A	9.7MHz	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	driven dephasing time	1.8us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	driven dephasing time	2.1us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	free-precession dephasing time T*2	7.2us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	Hahn-echo free precession time lower bound	26us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—

Properties

Type	Label	Value	Material	Sample	Source
Other	hyperfine coupling magnitude A	9.7MHz	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	driven dephasing time	1.8us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	driven dephasing time	2.1us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	free-precession dephasing time T*2	7.2us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	Hahn-echo free precession time lower bound	26us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—

Properties

Type	Label	Value	Material	Sample	Source
Other	hyperfine coupling magnitude A	9.7MHz	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	driven dephasing time	1.8us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	driven dephasing time	2.1us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	free-precession dephasing time T*2	7.2us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—
Fet Mobility	Hahn-echo free precession time lower bound	26us	V:4H-SiC	Commercial 4H-SiC sample with naturally abundant isotopes co	—