Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations5 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Al thickness | 80nm | — | |||
| Device Area | NbSe₂ overlap area | 88um² | — | |||
| Substrate Thickness | NbSe₂ flake thickness | 10-15nm | — | |||
| Fet Threshold Voltage | T₁ | 6.5us | — | |||
| Dimensionless Ratio | thermal photon noise robustness | 5-10 | — |
Related documents with shared materials, methods, properties, or citations.
Coherent detection of the oscillating acoustoelectric effect in graphene
A two-dimensional semiconductor-semimetal drag hybrid
Origin of subgap states in normal-insulator-superconductor van der Waals heterostructures
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Electric field tunable edge transport in Bernal stacked trilayer graphene
Building 3D superconductor-based Josephson junctions using a via transfer approach
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Gate-tunable quantum acoustoelectric transport in graphene
Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
Perturbative sensing of nanoscale materials with millimeter-wave photonic crystals
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations5 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Al thickness | 80nm | — | |||
| Device Area | NbSe₂ overlap area | 88um² | — | |||
| Substrate Thickness | NbSe₂ flake thickness | 10-15nm | — | |||
| Fet Threshold Voltage | T₁ | 6.5us | — | |||
| Dimensionless Ratio | thermal photon noise robustness | 5-10 | — |
Related documents with shared materials, methods, properties, or citations.
Coherent detection of the oscillating acoustoelectric effect in graphene
A two-dimensional semiconductor-semimetal drag hybrid
Origin of subgap states in normal-insulator-superconductor van der Waals heterostructures
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Electric field tunable edge transport in Bernal stacked trilayer graphene
Building 3D superconductor-based Josephson junctions using a via transfer approach
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Gate-tunable quantum acoustoelectric transport in graphene
Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
Perturbative sensing of nanoscale materials with millimeter-wave photonic crystals
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations5 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Al thickness | 80nm | — | |||
| Device Area | NbSe₂ overlap area | 88um² | — | |||
| Substrate Thickness | NbSe₂ flake thickness | 10-15nm | — | |||
| Fet Threshold Voltage | T₁ | 6.5us | — | |||
| Dimensionless Ratio | thermal photon noise robustness | 5-10 | — |
Related documents with shared materials, methods, properties, or citations.
Coherent detection of the oscillating acoustoelectric effect in graphene
A two-dimensional semiconductor-semimetal drag hybrid
Origin of subgap states in normal-insulator-superconductor van der Waals heterostructures
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Electric field tunable edge transport in Bernal stacked trilayer graphene
Building 3D superconductor-based Josephson junctions using a via transfer approach
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Gate-tunable quantum acoustoelectric transport in graphene
Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
Perturbative sensing of nanoscale materials with millimeter-wave photonic crystals
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations5 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Al thickness | 80nm | — | |||
| Device Area | NbSe₂ overlap area | 88um² | — | |||
| Substrate Thickness | NbSe₂ flake thickness | 10-15nm | — | |||
| Fet Threshold Voltage | T₁ | 6.5us | — | |||
| Dimensionless Ratio | thermal photon noise robustness | 5-10 | — |
Related documents with shared materials, methods, properties, or citations.
Coherent detection of the oscillating acoustoelectric effect in graphene
A two-dimensional semiconductor-semimetal drag hybrid
Origin of subgap states in normal-insulator-superconductor van der Waals heterostructures
In-Substrate Imaging of Diamond–hBN FET Current via Wide-Field Quantum Diamond Microscopy
Electric field tunable edge transport in Bernal stacked trilayer graphene
Building 3D superconductor-based Josephson junctions using a via transfer approach
Tunable Inter-Edge Interactions in a Bilayer Graphene Quantum Hall Antidot
Gate-tunable quantum acoustoelectric transport in graphene
Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
Perturbative sensing of nanoscale materials with millimeter-wave photonic crystals