Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Chenyang Zhao; Sam M. Lambrick; Ke Wang; Shaoliang Guan; Aleksandar Radić; David J. Ward; Andrew P. Jardine; Boyao Liu

doi:10.48550/arxiv.2511.00770

Paper details

Research paper

Experimental Characterization

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Chenyang Zhao, Sam M. Lambrick, Ke Wang, Shaoliang Guan et al.

arXiv·2025·arXiv:2511.00770

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Natural bulk MoS₂ crystal cleaved with Scotch tape prior to loading into the SHeM sample chamber.

2 preparations2 characterizations4 properties5 figures

ExperimentalMoS₂Studied Material

Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN buffer atop a SiO₂ substrate.

3 preparations2 characterizations4 properties4 figures

ExperimentalMoS₂Studied MaterialBNSubstrate / DielectricSiO₂Substrate / Dielectric

Materials

MoS₂

Studied Material

Also known as

molybdenum disulfide

studied material

hBN

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Activation Energy Ev	adventitious carbon desorption	1eV	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Onset	desorption onset	80°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Peak Rate	maximum desorption rate	120°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Plateau	reflectivity plateau	200°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—

Properties

Type	Label	Value	Material	Sample	Source
Activation Energy Ev	adventitious carbon desorption	1eV	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Onset	desorption onset	80°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Peak Rate	maximum desorption rate	120°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Plateau	reflectivity plateau	200°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—

Properties

Type	Label	Value	Material	Sample	Source
Activation Energy Ev	adventitious carbon desorption	1eV	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Onset	desorption onset	80°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Peak Rate	maximum desorption rate	120°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Plateau	reflectivity plateau	200°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—

Properties

Type	Label	Value	Material	Sample	Source
Activation Energy Ev	adventitious carbon desorption	1eV	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Onset	desorption onset	80°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Peak Rate	maximum desorption rate	120°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—
Temperature Plateau	reflectivity plateau	200°C	MoS₂	Natural bulk MoS₂ crystal cleaved with Scotch tape prior to Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN	—

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Samples

Natural bulk MoS₂ crystal cleaved with Scotch tape prior to loading into the SHeM sample chamber.

Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN buffer atop a SiO₂ substrate.

Materials

Why these are connected

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Samples

Natural bulk MoS₂ crystal cleaved with Scotch tape prior to loading into the SHeM sample chamber.

Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN buffer atop a SiO₂ substrate.

Materials

Why these are connected

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Samples

Natural bulk MoS₂ crystal cleaved with Scotch tape prior to loading into the SHeM sample chamber.

Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN buffer atop a SiO₂ substrate.

Materials

Why these are connected

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Samples

Natural bulk MoS₂ crystal cleaved with Scotch tape prior to loading into the SHeM sample chamber.

Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN buffer atop a SiO₂ substrate.

Materials

Why these are connected

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Samples

Natural bulk MoS₂ crystal cleaved with Scotch tape prior to loading into the SHeM sample chamber.

Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN buffer atop a SiO₂ substrate.

Materials

Why these are connected

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Samples

Natural bulk MoS₂ crystal cleaved with Scotch tape prior to loading into the SHeM sample chamber.

Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN buffer atop a SiO₂ substrate.

Materials

Why these are connected

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Samples

Natural bulk MoS₂ crystal cleaved with Scotch tape prior to loading into the SHeM sample chamber.

Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN buffer atop a SiO₂ substrate.

Materials

Why these are connected

Characterising Atomic-Scale Surface Disorder on 2D Materials Using Neutral Atoms

Samples

Natural bulk MoS₂ crystal cleaved with Scotch tape prior to loading into the SHeM sample chamber.

Mechanically exfoliated monolayer MoS₂ flake on a ~25 nm hBN buffer atop a SiO₂ substrate.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

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Simulations

Processing

Characterization

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Simulations