Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Epitaxial GaAs quantum dots embedded in AlGaAs barrier layers within a p-i-n diode device used for optical pumping and photoluminescence-based nuclear spin polarization measurements.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Epitaxial GaAs quantum dots embedded in AlGaAs barrier layers within a p-i-n diode device used for optical pumping and photoluminescence-based nuclear spin polarization measurements.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Epitaxial GaAs quantum dots embedded in AlGaAs barrier layers within a p-i-n diode device used for optical pumping and photoluminescence-based nuclear spin polarization measurements.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Epitaxial GaAs quantum dots embedded in AlGaAs barrier layers within a p-i-n diode device used for optical pumping and photoluminescence-based nuclear spin polarization measurements.
