Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties2 figures
3 characterizations2 properties4 figures
3 characterizations2 properties4 figures
3 characterizations2 properties4 figures
1 preparation4 characterizations7 properties5 figures
1 preparation5 characterizations11 properties6 figures
1 preparation4 characterizations2 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 3.996angstrom | — | |||
| Xrd Lattice Constant C | c | 11.2869angstrom | — | |||
| XRD Peak | (101) | 23.5deg | — | |||
| XRD Peak | (102) | 27.6deg | — | |||
| Xrd Crystallite Size | Scherrer size | 68.4nm | — | |||
| Xrd Crystallite Size | Scherrer size | 13nm | — | |||
| Xrd Crystallite Size | Scherrer size | 8.2nm | — | |||
| Xrd Crystallite Size | Scherrer size | 11.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | 43.9nm | — | |||
| Xrd Crystallite Size | Scherrer size | 32.4nm | — | |||
| Xrd Crystallite Size | Scherrer size | 38.2nm | — | |||
| Optical Band Gap | band gap | 1.22eV | — | |||
| Optical Band Gap | band gap | 1.09eV | — | |||
| Optical Band Gap | band gap | 0.89eV | — | |||
| Optical Band Gap | band gap | 0.95eV | — | |||
| Optical Band Gap | band gap | 0.93eV | — | |||
| Optical Band Gap | band gap | 0.8eV | — | |||
| Optical Band Gap | band gap | 0.86eV | — | |||
| Raman Peak | lattice fringe spacing | 0.076nm | — | |||
| Raman Peak | lattice fringe spacing | 0.097nm | — | |||
| Transport | oxidation peak potential | 0.38V | — | |||
| Transport | linear range | 0.019 to 0.299 and 4.28 to 403.14μM | — | |||
| Transport | limit of detection | 1.2nM | — | |||
| Transport | sensitivity | 15.9μA μM−1 cm⁻² | — | |||
| Xps Binding Energy | Cu 2p3/2 | 932.5eV | — | |||
| Xps Binding Energy | Cu 2p1/2 | 952.2eV | — | |||
| Xps Binding Energy | S 2p3/2 | 161.1eV | — | |||
| Xps Binding Energy | S 2p1/2 | 163eV | — | |||
| Xps Binding Energy | Cu 2p3/2 | 931.5eV | — | |||
| Xps Binding Energy | Cu 2p1/2 | 951.7eV | — | |||
| Xps Binding Energy | S 2p3/2 | 161.2eV | — | |||
| Xps Binding Energy | S 2p1/2 | 162.5eV | — |
Related documents with shared materials, methods, properties, or citations.
Process for Synthesizing Reduced Graphene Oxide on a Substrate from Seedlac
FUNCTIONALIZED GRAPHENE AND METHODS OF MANUFACTURING THE SAME
METHOD FOR OBTAINING GRAPHENE OXIDE
Formation and protection of an Eu-Ir surface compound below hexagonal boron nitride
GRAPHENE AND POWER STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF
PROCESS FOR PRODUCING GRAPHENE OXIDE PRODUCTS AND USES THEREOF
GRAPHENE/ORGANIC SOLVENT DISPERSION AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING LITHIUM-ION BATTERY ELECTRODE
POSITIVE ELECTRODE ACTIVE MATERIAL/GRAPHENE COMPOSITE PARTICLES, POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION CELL, AND METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL/GRAPHENE COMPOSITE PARTICLES
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties2 figures
3 characterizations2 properties4 figures
3 characterizations2 properties4 figures
3 characterizations2 properties4 figures
1 preparation4 characterizations7 properties5 figures
1 preparation5 characterizations11 properties6 figures
1 preparation4 characterizations2 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 3.996angstrom | — | |||
| Xrd Lattice Constant C | c | 11.2869angstrom | — | |||
| XRD Peak | (101) | 23.5deg | — | |||
| XRD Peak | (102) | 27.6deg | — | |||
| Xrd Crystallite Size | Scherrer size | 68.4nm | — | |||
| Xrd Crystallite Size | Scherrer size | 13nm | — | |||
| Xrd Crystallite Size | Scherrer size | 8.2nm | — | |||
| Xrd Crystallite Size | Scherrer size | 11.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | 43.9nm | — | |||
| Xrd Crystallite Size | Scherrer size | 32.4nm | — | |||
| Xrd Crystallite Size | Scherrer size | 38.2nm | — | |||
| Optical Band Gap | band gap | 1.22eV | — | |||
| Optical Band Gap | band gap | 1.09eV | — | |||
| Optical Band Gap | band gap | 0.89eV | — | |||
| Optical Band Gap | band gap | 0.95eV | — | |||
| Optical Band Gap | band gap | 0.93eV | — | |||
| Optical Band Gap | band gap | 0.8eV | — | |||
| Optical Band Gap | band gap | 0.86eV | — | |||
| Raman Peak | lattice fringe spacing | 0.076nm | — | |||
| Raman Peak | lattice fringe spacing | 0.097nm | — | |||
| Transport | oxidation peak potential | 0.38V | — | |||
| Transport | linear range | 0.019 to 0.299 and 4.28 to 403.14μM | — | |||
| Transport | limit of detection | 1.2nM | — | |||
| Transport | sensitivity | 15.9μA μM−1 cm⁻² | — | |||
| Xps Binding Energy | Cu 2p3/2 | 932.5eV | — | |||
| Xps Binding Energy | Cu 2p1/2 | 952.2eV | — | |||
| Xps Binding Energy | S 2p3/2 | 161.1eV | — | |||
| Xps Binding Energy | S 2p1/2 | 163eV | — | |||
| Xps Binding Energy | Cu 2p3/2 | 931.5eV | — | |||
| Xps Binding Energy | Cu 2p1/2 | 951.7eV | — | |||
| Xps Binding Energy | S 2p3/2 | 161.2eV | — | |||
| Xps Binding Energy | S 2p1/2 | 162.5eV | — |
Related documents with shared materials, methods, properties, or citations.
Process for Synthesizing Reduced Graphene Oxide on a Substrate from Seedlac
FUNCTIONALIZED GRAPHENE AND METHODS OF MANUFACTURING THE SAME
METHOD FOR OBTAINING GRAPHENE OXIDE
Formation and protection of an Eu-Ir surface compound below hexagonal boron nitride
GRAPHENE AND POWER STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF
PROCESS FOR PRODUCING GRAPHENE OXIDE PRODUCTS AND USES THEREOF
GRAPHENE/ORGANIC SOLVENT DISPERSION AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING LITHIUM-ION BATTERY ELECTRODE
POSITIVE ELECTRODE ACTIVE MATERIAL/GRAPHENE COMPOSITE PARTICLES, POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION CELL, AND METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL/GRAPHENE COMPOSITE PARTICLES
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties2 figures
3 characterizations2 properties4 figures
3 characterizations2 properties4 figures
3 characterizations2 properties4 figures
1 preparation4 characterizations7 properties5 figures
1 preparation5 characterizations11 properties6 figures
1 preparation4 characterizations2 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 3.996angstrom | — | |||
| Xrd Lattice Constant C | c | 11.2869angstrom | — | |||
| XRD Peak | (101) | 23.5deg | — | |||
| XRD Peak | (102) | 27.6deg | — | |||
| Xrd Crystallite Size | Scherrer size | 68.4nm | — | |||
| Xrd Crystallite Size | Scherrer size | 13nm | — | |||
| Xrd Crystallite Size | Scherrer size | 8.2nm | — | |||
| Xrd Crystallite Size | Scherrer size | 11.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | 43.9nm | — | |||
| Xrd Crystallite Size | Scherrer size | 32.4nm | — | |||
| Xrd Crystallite Size | Scherrer size | 38.2nm | — | |||
| Optical Band Gap | band gap | 1.22eV | — | |||
| Optical Band Gap | band gap | 1.09eV | — | |||
| Optical Band Gap | band gap | 0.89eV | — | |||
| Optical Band Gap | band gap | 0.95eV | — | |||
| Optical Band Gap | band gap | 0.93eV | — | |||
| Optical Band Gap | band gap | 0.8eV | — | |||
| Optical Band Gap | band gap | 0.86eV | — | |||
| Raman Peak | lattice fringe spacing | 0.076nm | — | |||
| Raman Peak | lattice fringe spacing | 0.097nm | — | |||
| Transport | oxidation peak potential | 0.38V | — | |||
| Transport | linear range | 0.019 to 0.299 and 4.28 to 403.14μM | — | |||
| Transport | limit of detection | 1.2nM | — | |||
| Transport | sensitivity | 15.9μA μM−1 cm⁻² | — | |||
| Xps Binding Energy | Cu 2p3/2 | 932.5eV | — | |||
| Xps Binding Energy | Cu 2p1/2 | 952.2eV | — | |||
| Xps Binding Energy | S 2p3/2 | 161.1eV | — | |||
| Xps Binding Energy | S 2p1/2 | 163eV | — | |||
| Xps Binding Energy | Cu 2p3/2 | 931.5eV | — | |||
| Xps Binding Energy | Cu 2p1/2 | 951.7eV | — | |||
| Xps Binding Energy | S 2p3/2 | 161.2eV | — | |||
| Xps Binding Energy | S 2p1/2 | 162.5eV | — |
Related documents with shared materials, methods, properties, or citations.
Process for Synthesizing Reduced Graphene Oxide on a Substrate from Seedlac
FUNCTIONALIZED GRAPHENE AND METHODS OF MANUFACTURING THE SAME
METHOD FOR OBTAINING GRAPHENE OXIDE
Formation and protection of an Eu-Ir surface compound below hexagonal boron nitride
GRAPHENE AND POWER STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF
PROCESS FOR PRODUCING GRAPHENE OXIDE PRODUCTS AND USES THEREOF
GRAPHENE/ORGANIC SOLVENT DISPERSION AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING LITHIUM-ION BATTERY ELECTRODE
POSITIVE ELECTRODE ACTIVE MATERIAL/GRAPHENE COMPOSITE PARTICLES, POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION CELL, AND METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL/GRAPHENE COMPOSITE PARTICLES
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties2 figures
3 characterizations2 properties4 figures
3 characterizations2 properties4 figures
3 characterizations2 properties4 figures
1 preparation4 characterizations7 properties5 figures
1 preparation5 characterizations11 properties6 figures
1 preparation4 characterizations2 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Xrd Lattice Constant A | a | 3.996angstrom | — | |||
| Xrd Lattice Constant C | c | 11.2869angstrom | — | |||
| XRD Peak | (101) | 23.5deg | — | |||
| XRD Peak | (102) | 27.6deg | — | |||
| Xrd Crystallite Size | Scherrer size | 68.4nm | — | |||
| Xrd Crystallite Size | Scherrer size | 13nm | — | |||
| Xrd Crystallite Size | Scherrer size | 8.2nm | — | |||
| Xrd Crystallite Size | Scherrer size | 11.8nm | — | |||
| Xrd Crystallite Size | Scherrer size | 43.9nm | — | |||
| Xrd Crystallite Size | Scherrer size | 32.4nm | — | |||
| Xrd Crystallite Size | Scherrer size | 38.2nm | — | |||
| Optical Band Gap | band gap | 1.22eV | — | |||
| Optical Band Gap | band gap | 1.09eV | — | |||
| Optical Band Gap | band gap | 0.89eV | — | |||
| Optical Band Gap | band gap | 0.95eV | — | |||
| Optical Band Gap | band gap | 0.93eV | — | |||
| Optical Band Gap | band gap | 0.8eV | — | |||
| Optical Band Gap | band gap | 0.86eV | — | |||
| Raman Peak | lattice fringe spacing | 0.076nm | — | |||
| Raman Peak | lattice fringe spacing | 0.097nm | — | |||
| Transport | oxidation peak potential | 0.38V | — | |||
| Transport | linear range | 0.019 to 0.299 and 4.28 to 403.14μM | — | |||
| Transport | limit of detection | 1.2nM | — | |||
| Transport | sensitivity | 15.9μA μM−1 cm⁻² | — | |||
| Xps Binding Energy | Cu 2p3/2 | 932.5eV | — | |||
| Xps Binding Energy | Cu 2p1/2 | 952.2eV | — | |||
| Xps Binding Energy | S 2p3/2 | 161.1eV | — | |||
| Xps Binding Energy | S 2p1/2 | 163eV | — | |||
| Xps Binding Energy | Cu 2p3/2 | 931.5eV | — | |||
| Xps Binding Energy | Cu 2p1/2 | 951.7eV | — | |||
| Xps Binding Energy | S 2p3/2 | 161.2eV | — | |||
| Xps Binding Energy | S 2p1/2 | 162.5eV | — |
Related documents with shared materials, methods, properties, or citations.
Process for Synthesizing Reduced Graphene Oxide on a Substrate from Seedlac
FUNCTIONALIZED GRAPHENE AND METHODS OF MANUFACTURING THE SAME
METHOD FOR OBTAINING GRAPHENE OXIDE
Formation and protection of an Eu-Ir surface compound below hexagonal boron nitride
GRAPHENE AND POWER STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF
PROCESS FOR PRODUCING GRAPHENE OXIDE PRODUCTS AND USES THEREOF
GRAPHENE/ORGANIC SOLVENT DISPERSION AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING LITHIUM-ION BATTERY ELECTRODE
POSITIVE ELECTRODE ACTIVE MATERIAL/GRAPHENE COMPOSITE PARTICLES, POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION CELL, AND METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL/GRAPHENE COMPOSITE PARTICLES
