Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Gate-tunable WS₂/Al₂O₃ superlattice on SiO₂/p++-Si with Ti/Au electrical contact; three repeated WS₂ monolayers separated by 3 nm Al₂O₃ layers on a 93 nm SiO₂/Si substrate.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Gate-tunable WS₂/Al₂O₃ superlattice on SiO₂/p++-Si with Ti/Au electrical contact; three repeated WS₂ monolayers separated by 3 nm Al₂O₃ layers on a 93 nm SiO₂/Si substrate.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Gate-tunable WS₂/Al₂O₃ superlattice on SiO₂/p++-Si with Ti/Au electrical contact; three repeated WS₂ monolayers separated by 3 nm Al₂O₃ layers on a 93 nm SiO₂/Si substrate.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Gate-tunable WS₂/Al₂O₃ superlattice on SiO₂/p++-Si with Ti/Au electrical contact; three repeated WS₂ monolayers separated by 3 nm Al₂O₃ layers on a 93 nm SiO₂/Si substrate.
