Patent
US 9,564,579T i tle: G LAPH ENE MAG(NET ICT U NNEL JUNCTION SP IN FILTERS AND METHOD S OF MAKING
Jeffry Kelber, Mi Zhou
University of North Texas·US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 9,564,579Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sche m atic of an MTJ device of the invention. Orientation of the two FM anodes parallel (P) or antiparallel (AP) results in co rr esponding …
FIG. 2) shows that the thickness of the carbon overlayer grows to an average t hickness of ~- 3. 5 monolayers during the annealing process, while transforming …
FIG. 3 reflects corresponding L E ED image data showing a graphene lattice in an R 30 position relative to Co. The relatively narrow nature of the graphene sp o …
FIG. 4 presents graphically predicted Gy and G AP values for a FM/few layer graphene/F M MT J as a function of the number of graphene lay ers, from re f. [1]. …
FIG. 5) as evidenced by the appearance of streaks, rather than spots, corresponding to the graphene lattice. Loss of op timum MTJ performance parameters aside, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(WIT H DRAWN) A method for forming a few molecular layer thick film of graphene on a metal layer, comprising depositing said metal layer on a substrate by electron beam deposition, and annealing the metal layer so deposited at temperatures below 700 K for a period of time sufficient to induce segregation of carbon in said metal layer to a surface of that metal layer, whereby a few molecule layer thick film of graphene is formed on said metal layer. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein said metal is either cobalt or nickel. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein said annealing is conducted at about 600K in ultra-high vacuum. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein the resulting layer of graphene is highly azimuthally ordered. withdrawn
(WIT H DRAWN) The process of Claim 1, which further comprises forming a layer of said metal on the graphene layer, giving first and second layers of said metal. withdrawn
A magnetic tunnel junction (MTJ) of high tunneling magnetoresistance (TMR) in excess of 250 %, comprising a first ferromagnetic metal layer, a few molecule layer film of graphene on said first ferromagnetic metal layer, and a second ferromagnetic metal layer on said graphene film.
The MTJ of Claim 9, wherein said TMR value second ferromagnetic metal layers are comprised
The MTJ of Claim 9, wherein said MTJ is device,
The MTJ of Claim 9, wherein said first and ferromagnetic orientation with respect to each
The MTJ of Claim 9, wherein said first and antiparallel ferromagnetic orientation with respect
. canceled
15-17. canceled
canceled
canceled is in excess of 1,000 %, and said first and of cobalt or nickel. formed on a conductive interconnect of a Si CMOS second ferromagnetic metal layers are in parallel other. second ferromagnetic metal layers are in to each other.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Electron beam evaporation was used to deposit ~40 Å of disordered cobalt on an Al₂O₃(0001) substrate at background pressure of ~1×10⁻¹⁰ Torr, introducing dissolved carbon into the cobalt film. Annealing to ~600 K in UHV caused segregation of dissolved carbon to the surface as the cobalt ordered to form a Co(111) film, producing a few-layer graphene overlayer (~3.5 monolayers average thickness, confirmed by Auger C(KVV) data). LEED data showed highly ordered graphene displaying diffraction spots at 30° relative to Co spots (R₃₀ position). A second cobalt layer of ~40 Å was then deposited over the graphene to complete the MTJ stack.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic tunnel junction (MTJ) spin filter
Si CMOS integrated MTJ
Materials described outside the worked examples.
ferromagnetic metal layer
nickel
Ni
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a sche m atic of an MTJ device of the invention. Orientation of the two FM anodes parallel (P) or antiparallel (AP) results in co rr esponding …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TMR in excess of 250% | ≥ 250 | — |
average graphene layer thickness ~3.5 monolayers | 3.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,564,579Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sche m atic of an MTJ device of the invention. Orientation of the two FM anodes parallel (P) or antiparallel (AP) results in co rr esponding …
FIG. 2) shows that the thickness of the carbon overlayer grows to an average t hickness of ~- 3. 5 monolayers during the annealing process, while transforming …
FIG. 3 reflects corresponding L E ED image data showing a graphene lattice in an R 30 position relative to Co. The relatively narrow nature of the graphene sp o …
FIG. 4 presents graphically predicted Gy and G AP values for a FM/few layer graphene/F M MT J as a function of the number of graphene lay ers, from re f. [1]. …
FIG. 5) as evidenced by the appearance of streaks, rather than spots, corresponding to the graphene lattice. Loss of op timum MTJ performance parameters aside, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(WIT H DRAWN) A method for forming a few molecular layer thick film of graphene on a metal layer, comprising depositing said metal layer on a substrate by electron beam deposition, and annealing the metal layer so deposited at temperatures below 700 K for a period of time sufficient to induce segregation of carbon in said metal layer to a surface of that metal layer, whereby a few molecule layer thick film of graphene is formed on said metal layer. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein said metal is either cobalt or nickel. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein said annealing is conducted at about 600K in ultra-high vacuum. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein the resulting layer of graphene is highly azimuthally ordered. withdrawn
(WIT H DRAWN) The process of Claim 1, which further comprises forming a layer of said metal on the graphene layer, giving first and second layers of said metal. withdrawn
A magnetic tunnel junction (MTJ) of high tunneling magnetoresistance (TMR) in excess of 250 %, comprising a first ferromagnetic metal layer, a few molecule layer film of graphene on said first ferromagnetic metal layer, and a second ferromagnetic metal layer on said graphene film.
The MTJ of Claim 9, wherein said TMR value second ferromagnetic metal layers are comprised
The MTJ of Claim 9, wherein said MTJ is device,
The MTJ of Claim 9, wherein said first and ferromagnetic orientation with respect to each
The MTJ of Claim 9, wherein said first and antiparallel ferromagnetic orientation with respect
. canceled
15-17. canceled
canceled
canceled is in excess of 1,000 %, and said first and of cobalt or nickel. formed on a conductive interconnect of a Si CMOS second ferromagnetic metal layers are in parallel other. second ferromagnetic metal layers are in to each other.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Electron beam evaporation was used to deposit ~40 Å of disordered cobalt on an Al₂O₃(0001) substrate at background pressure of ~1×10⁻¹⁰ Torr, introducing dissolved carbon into the cobalt film. Annealing to ~600 K in UHV caused segregation of dissolved carbon to the surface as the cobalt ordered to form a Co(111) film, producing a few-layer graphene overlayer (~3.5 monolayers average thickness, confirmed by Auger C(KVV) data). LEED data showed highly ordered graphene displaying diffraction spots at 30° relative to Co spots (R₃₀ position). A second cobalt layer of ~40 Å was then deposited over the graphene to complete the MTJ stack.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic tunnel junction (MTJ) spin filter
Si CMOS integrated MTJ
Materials described outside the worked examples.
ferromagnetic metal layer
nickel
Ni
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a sche m atic of an MTJ device of the invention. Orientation of the two FM anodes parallel (P) or antiparallel (AP) results in co rr esponding …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TMR in excess of 250% | ≥ 250 | — |
average graphene layer thickness ~3.5 monolayers | 3.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,564,579Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sche m atic of an MTJ device of the invention. Orientation of the two FM anodes parallel (P) or antiparallel (AP) results in co rr esponding …
FIG. 2) shows that the thickness of the carbon overlayer grows to an average t hickness of ~- 3. 5 monolayers during the annealing process, while transforming …
FIG. 3 reflects corresponding L E ED image data showing a graphene lattice in an R 30 position relative to Co. The relatively narrow nature of the graphene sp o …
FIG. 4 presents graphically predicted Gy and G AP values for a FM/few layer graphene/F M MT J as a function of the number of graphene lay ers, from re f. [1]. …
FIG. 5) as evidenced by the appearance of streaks, rather than spots, corresponding to the graphene lattice. Loss of op timum MTJ performance parameters aside, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(WIT H DRAWN) A method for forming a few molecular layer thick film of graphene on a metal layer, comprising depositing said metal layer on a substrate by electron beam deposition, and annealing the metal layer so deposited at temperatures below 700 K for a period of time sufficient to induce segregation of carbon in said metal layer to a surface of that metal layer, whereby a few molecule layer thick film of graphene is formed on said metal layer. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein said metal is either cobalt or nickel. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein said annealing is conducted at about 600K in ultra-high vacuum. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein the resulting layer of graphene is highly azimuthally ordered. withdrawn
(WIT H DRAWN) The process of Claim 1, which further comprises forming a layer of said metal on the graphene layer, giving first and second layers of said metal. withdrawn
A magnetic tunnel junction (MTJ) of high tunneling magnetoresistance (TMR) in excess of 250 %, comprising a first ferromagnetic metal layer, a few molecule layer film of graphene on said first ferromagnetic metal layer, and a second ferromagnetic metal layer on said graphene film.
The MTJ of Claim 9, wherein said TMR value second ferromagnetic metal layers are comprised
The MTJ of Claim 9, wherein said MTJ is device,
The MTJ of Claim 9, wherein said first and ferromagnetic orientation with respect to each
The MTJ of Claim 9, wherein said first and antiparallel ferromagnetic orientation with respect
. canceled
15-17. canceled
canceled
canceled is in excess of 1,000 %, and said first and of cobalt or nickel. formed on a conductive interconnect of a Si CMOS second ferromagnetic metal layers are in parallel other. second ferromagnetic metal layers are in to each other.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Electron beam evaporation was used to deposit ~40 Å of disordered cobalt on an Al₂O₃(0001) substrate at background pressure of ~1×10⁻¹⁰ Torr, introducing dissolved carbon into the cobalt film. Annealing to ~600 K in UHV caused segregation of dissolved carbon to the surface as the cobalt ordered to form a Co(111) film, producing a few-layer graphene overlayer (~3.5 monolayers average thickness, confirmed by Auger C(KVV) data). LEED data showed highly ordered graphene displaying diffraction spots at 30° relative to Co spots (R₃₀ position). A second cobalt layer of ~40 Å was then deposited over the graphene to complete the MTJ stack.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic tunnel junction (MTJ) spin filter
Si CMOS integrated MTJ
Materials described outside the worked examples.
ferromagnetic metal layer
nickel
Ni
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a sche m atic of an MTJ device of the invention. Orientation of the two FM anodes parallel (P) or antiparallel (AP) results in co rr esponding …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TMR in excess of 250% | ≥ 250 | — |
average graphene layer thickness ~3.5 monolayers | 3.5 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,564,579Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sche m atic of an MTJ device of the invention. Orientation of the two FM anodes parallel (P) or antiparallel (AP) results in co rr esponding …
FIG. 2) shows that the thickness of the carbon overlayer grows to an average t hickness of ~- 3. 5 monolayers during the annealing process, while transforming …
FIG. 3 reflects corresponding L E ED image data showing a graphene lattice in an R 30 position relative to Co. The relatively narrow nature of the graphene sp o …
FIG. 4 presents graphically predicted Gy and G AP values for a FM/few layer graphene/F M MT J as a function of the number of graphene lay ers, from re f. [1]. …
FIG. 5) as evidenced by the appearance of streaks, rather than spots, corresponding to the graphene lattice. Loss of op timum MTJ performance parameters aside, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(WIT H DRAWN) A method for forming a few molecular layer thick film of graphene on a metal layer, comprising depositing said metal layer on a substrate by electron beam deposition, and annealing the metal layer so deposited at temperatures below 700 K for a period of time sufficient to induce segregation of carbon in said metal layer to a surface of that metal layer, whereby a few molecule layer thick film of graphene is formed on said metal layer. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein said metal is either cobalt or nickel. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein said annealing is conducted at about 600K in ultra-high vacuum. withdrawn
(WIT H DRAWN) The method of Claim 1, wherein the resulting layer of graphene is highly azimuthally ordered. withdrawn
(WIT H DRAWN) The process of Claim 1, which further comprises forming a layer of said metal on the graphene layer, giving first and second layers of said metal. withdrawn
A magnetic tunnel junction (MTJ) of high tunneling magnetoresistance (TMR) in excess of 250 %, comprising a first ferromagnetic metal layer, a few molecule layer film of graphene on said first ferromagnetic metal layer, and a second ferromagnetic metal layer on said graphene film.
The MTJ of Claim 9, wherein said TMR value second ferromagnetic metal layers are comprised
The MTJ of Claim 9, wherein said MTJ is device,
The MTJ of Claim 9, wherein said first and ferromagnetic orientation with respect to each
The MTJ of Claim 9, wherein said first and antiparallel ferromagnetic orientation with respect
. canceled
15-17. canceled
canceled
canceled is in excess of 1,000 %, and said first and of cobalt or nickel. formed on a conductive interconnect of a Si CMOS second ferromagnetic metal layers are in parallel other. second ferromagnetic metal layers are in to each other.
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials2 process steps
Electron beam evaporation was used to deposit ~40 Å of disordered cobalt on an Al₂O₃(0001) substrate at background pressure of ~1×10⁻¹⁰ Torr, introducing dissolved carbon into the cobalt film. Annealing to ~600 K in UHV caused segregation of dissolved carbon to the surface as the cobalt ordered to form a Co(111) film, producing a few-layer graphene overlayer (~3.5 monolayers average thickness, confirmed by Auger C(KVV) data). LEED data showed highly ordered graphene displaying diffraction spots at 30° relative to Co spots (R₃₀ position). A second cobalt layer of ~40 Å was then deposited over the graphene to complete the MTJ stack.
Layer stacks claimed or described, ordered top of device to substrate.
magnetic tunnel junction (MTJ) spin filter
Si CMOS integrated MTJ
Materials described outside the worked examples.
ferromagnetic metal layer
nickel
Ni
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a sche m atic of an MTJ device of the invention. Orientation of the two FM anodes parallel (P) or antiparallel (AP) results in co rr esponding …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
TMR in excess of 250% | ≥ 250 | — |
average graphene layer thickness ~3.5 monolayers | 3.5 |
Related documents with shared materials, methods, properties, or citations.
ferromagnetic metal
copper interconnect
Cu
FIG. 2) shows that the thickness of the carbon overlayer grows to an average t hickness of ~- 3. 5 monolayers during the annealing process, while transforming …
Thickness | 30–50 Å | — |
Temperature | ≤ 700 K | — |
Temperature | ≤ 730 K | — |
Temperature | ≤ 770 K | — |
Temperature | ≥ 750 K | — |
ferromagnetic metal
copper interconnect
Cu
FIG. 2) shows that the thickness of the carbon overlayer grows to an average t hickness of ~- 3. 5 monolayers during the annealing process, while transforming …
Thickness | 30–50 Å | — |
Temperature | ≤ 700 K | — |
Temperature | ≤ 730 K | — |
Temperature | ≤ 770 K | — |
Temperature | ≥ 750 K | — |
ferromagnetic metal
copper interconnect
Cu
FIG. 2) shows that the thickness of the carbon overlayer grows to an average t hickness of ~- 3. 5 monolayers during the annealing process, while transforming …
Thickness | 30–50 Å | — |
Temperature | ≤ 700 K | — |
Temperature | ≤ 730 K | — |
Temperature | ≤ 770 K | — |
Temperature | ≥ 750 K | — |
ferromagnetic metal
copper interconnect
Cu
FIG. 2) shows that the thickness of the carbon overlayer grows to an average t hickness of ~- 3. 5 monolayers during the annealing process, while transforming …
Thickness | 30–50 Å | — |
Temperature | ≤ 700 K | — |
Temperature | ≤ 730 K | — |
Temperature | ≤ 770 K | — |
Temperature | ≥ 750 K | — |