Patent
US 10,056,219Patent
Atlas literature
Patent
US 10,056,219Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of an exemplary multi-electrode electronic device. -3- [0012]
FIG. 2 is a schematic illustration of a device in which a grid electrode made of graphene materials is disposed proximate to an anode or cathode electrode. …
FIG. 3 is a schematic illustration of an example graphene sheet in which carbon atoms have been removed to form holes or apertures through which charge …
FIG. 4 is a schematic illustration of an example configuration of a grid electrode made of graphene material that is supported over an underlying electrode by …
FIG. 5 is a schematic illustration of an example arrangement of a pair of electrodes, which may be used in an electronic device. [0016]
FIG. 6. In such an embodiment where the multi-layer graphene grid 600 is incorporated in an electronic device such as electronic device 100 shown in
FIG. 7 is sketched for illustrative purposes, and in some embodiments the reflectivity spectra 700, 710 may deviate from these figures. Further, although the …
FIG. 8. Creating a gap 810 has the effect of moving the minima and maxima (720, 740, 760) of the reflectivity spectrum since energies corresponding to these …
FIG. 9. By varying the incident angle 920, this changes the effective thickness of the graphene layers 620, 640 as seen by the incoming bean 940, therefore …
FIG. 10 is a schematic illustration of a curved multi-layer graphene grid and a cathode with a ridge emitter. [0021]
FIG. 11. For example, the multilayer graphene grid 600 can be incorporated in a vacuum electronic device such as a vacuum tube, a power amplifier, a klystron, a …
FIG. 12. In this embodiment the cathode 1204 and the graphene grid 1206 are operably connected to a power supply to produce an electric field between the …
FIG. 13 is a schematic illustration of graphene grid on a support structure with apertures. DETAILED DESCRIPTION [0024] In the following detailed description, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a first grid configured to receive a flow of electrons in a vacuum device, wherein the first grid includes at least two substantially parallel layers of graphene each bein g one atom thick planar sheets, and wherein the vacuum device is configured with a set of device parameters; wherein the first grid is receptive to a voltage source to produce a voltage in the first grid; and wherein the first grid is configured to transmit electrons in an energy pass band that is at least partially determined by the voltage and the set of device parameters. Currently amended
The apparatus of Claim 1 wherein the voltage is dynamically tunable, and wherein changing the voltage changes the energy pass band. Original
The apparatus of Claim 1 wherein the set of device parameters and the voltage are selected to maximize the transmission of electrons through the first grid for the energy pass band. Original
The apparatus of Claim 1 wherein the set of device parameters are at least partially selected according to a relative amount of inelastic scattering. Original
The apparatus of Claim 1 wherein the set of device parameters includes a spacing between the at least two graphene layers that is at least partially determined by a spacer layer. Original
The apparatus of Claim 1 wherein the set of device parameters includes a number of layers of graphene corresponding to the first grid, where the number of layers of graphene is greater than two. Original
The apparatus of Claim 1 wherein the set of device parameters includes a position of the first grid relative to a cathode and an anode. Original
The apparatus of Claim 1 wherein the set of device parameters includes a voltage bias applied to at least one of a cathode, an anode, and the first grid. Original
The apparatus of Claim 1 further comprising a second grid, and wherein the set of device parameters includes a position of the second grid relative to the first grid, a cathode, and an anode. Original
The apparatus of Claim 1 wherein at least one of the at least two layers of graphene is doped. Original
The apparatus of Claim 1 wherein the set of device parameters includes an incident angle defined by a direction of the flow of electrons and the first grid. Original
The apparatus of Claim 1 wherein the first grid is arranged sufficiently close to a cathode to induce electron emission from the cathode when an electric potential is applied to the first grid in device operation. Original
The apparatus of Claim 1 wherein the grid is characterized by an energy-dependent transmission probability spectrum, and wherein the set of device parameters is selected according to the energy dependent transmission probability spectrum. Original
An apparatus comprising: a cathode and a graphene grid that are configured in a vacuum electronic device, wherein the graphene grid is configured to modulate a flow of electrons from the cathode in device operation and the graphene grid includes one or more layers that are one atom thick sheets; wherein the cathode and the graphene grid are receptive to a voltage to produce an electric field between the cathode and the graphene grid; and wherein the graphene grid is deformable SVG 15603340.03-06-2018.JEG₅S₆GERXEAPX2.CLM.1.svg 0.16 5.98 Black and white field between the cathode and the graphene grid. Currently amended
The apparatus of Claim 19 wherein the deformation of the graphene grid is selected to change the electric field in a region proximate to the cathode to increase electron emission from the cathode. Previously presented
The apparatus of Claim 19 further comprising one or more additional grids arranged relative to the cathode and the graphene grid that are configured to modulate the flow of electrons, and wherein the graphene grid is deformable responsive to one or more forces from the one or more additional grids. Previously presented
The apparatus of Claim 19 wherein the graphene grid is pretensioned to adjust the amount of the deformation responsive to [[the]] input. Currently amended
The apparatus of Claim 19 wherein the graphene grid is fabricated such that it is nonhomogenous to facilitate bending of the grid in one or more regions. Previously presented
The apparatus of Claim 19 wherein the cathode further includes insulating supports configured to prohibit contact between the cathode and the graphene grid. Previously presented
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes [[a]] one or more layers of graphene that are one atom thick sheets on a support structure. Currently amended
The apparatus of Claim 25 wherein the support structure includes a layer of material patterned with holes. Original
The apparatus of Claim 25 wherein the support structure includes at least one of a polymer, a silicon oxide, and silicon nitride. Original
The apparatus of Claim 25 wherein the support structure is in contact with the cathode and the graphene grid, and wherein the support structure has a thickness that determines the separation between the cathode and the graphene grid. Original
The apparatus of Claim 25 wherein the support structure includes a metal. Original
The apparatus of Claim 25 wherein the support structure includes an array of carbon nanotubes. Original
The apparatus of Claim 25 wherein the support structure includes lacey carbon. Original
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes nanoribbons of graphene in one or more lav ers that are one atom thick sheets. Currently amended
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes an array of carbon nanotubes and gra p hene in one or more la y ers that are one atom thick sheets. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
vacuum electronic device with multilayer graphene energy-filter grid
vacuum electronic device with deformable graphene grid
Materials described outside the worked examples.
graphene
C
doped graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9. By varying the incident angle 920, this changes the effective thickness of the graphene layers 620, 640 as seen by the incoming bean 940, therefore …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 100–200 eV | — |
— | 20–200 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,056,219Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of an exemplary multi-electrode electronic device. -3- [0012]
FIG. 2 is a schematic illustration of a device in which a grid electrode made of graphene materials is disposed proximate to an anode or cathode electrode. …
FIG. 3 is a schematic illustration of an example graphene sheet in which carbon atoms have been removed to form holes or apertures through which charge …
FIG. 4 is a schematic illustration of an example configuration of a grid electrode made of graphene material that is supported over an underlying electrode by …
FIG. 5 is a schematic illustration of an example arrangement of a pair of electrodes, which may be used in an electronic device. [0016]
FIG. 6. In such an embodiment where the multi-layer graphene grid 600 is incorporated in an electronic device such as electronic device 100 shown in
FIG. 7 is sketched for illustrative purposes, and in some embodiments the reflectivity spectra 700, 710 may deviate from these figures. Further, although the …
FIG. 8. Creating a gap 810 has the effect of moving the minima and maxima (720, 740, 760) of the reflectivity spectrum since energies corresponding to these …
FIG. 9. By varying the incident angle 920, this changes the effective thickness of the graphene layers 620, 640 as seen by the incoming bean 940, therefore …
FIG. 10 is a schematic illustration of a curved multi-layer graphene grid and a cathode with a ridge emitter. [0021]
FIG. 11. For example, the multilayer graphene grid 600 can be incorporated in a vacuum electronic device such as a vacuum tube, a power amplifier, a klystron, a …
FIG. 12. In this embodiment the cathode 1204 and the graphene grid 1206 are operably connected to a power supply to produce an electric field between the …
FIG. 13 is a schematic illustration of graphene grid on a support structure with apertures. DETAILED DESCRIPTION [0024] In the following detailed description, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a first grid configured to receive a flow of electrons in a vacuum device, wherein the first grid includes at least two substantially parallel layers of graphene each bein g one atom thick planar sheets, and wherein the vacuum device is configured with a set of device parameters; wherein the first grid is receptive to a voltage source to produce a voltage in the first grid; and wherein the first grid is configured to transmit electrons in an energy pass band that is at least partially determined by the voltage and the set of device parameters. Currently amended
The apparatus of Claim 1 wherein the voltage is dynamically tunable, and wherein changing the voltage changes the energy pass band. Original
The apparatus of Claim 1 wherein the set of device parameters and the voltage are selected to maximize the transmission of electrons through the first grid for the energy pass band. Original
The apparatus of Claim 1 wherein the set of device parameters are at least partially selected according to a relative amount of inelastic scattering. Original
The apparatus of Claim 1 wherein the set of device parameters includes a spacing between the at least two graphene layers that is at least partially determined by a spacer layer. Original
The apparatus of Claim 1 wherein the set of device parameters includes a number of layers of graphene corresponding to the first grid, where the number of layers of graphene is greater than two. Original
The apparatus of Claim 1 wherein the set of device parameters includes a position of the first grid relative to a cathode and an anode. Original
The apparatus of Claim 1 wherein the set of device parameters includes a voltage bias applied to at least one of a cathode, an anode, and the first grid. Original
The apparatus of Claim 1 further comprising a second grid, and wherein the set of device parameters includes a position of the second grid relative to the first grid, a cathode, and an anode. Original
The apparatus of Claim 1 wherein at least one of the at least two layers of graphene is doped. Original
The apparatus of Claim 1 wherein the set of device parameters includes an incident angle defined by a direction of the flow of electrons and the first grid. Original
The apparatus of Claim 1 wherein the first grid is arranged sufficiently close to a cathode to induce electron emission from the cathode when an electric potential is applied to the first grid in device operation. Original
The apparatus of Claim 1 wherein the grid is characterized by an energy-dependent transmission probability spectrum, and wherein the set of device parameters is selected according to the energy dependent transmission probability spectrum. Original
An apparatus comprising: a cathode and a graphene grid that are configured in a vacuum electronic device, wherein the graphene grid is configured to modulate a flow of electrons from the cathode in device operation and the graphene grid includes one or more layers that are one atom thick sheets; wherein the cathode and the graphene grid are receptive to a voltage to produce an electric field between the cathode and the graphene grid; and wherein the graphene grid is deformable SVG 15603340.03-06-2018.JEG₅S₆GERXEAPX2.CLM.1.svg 0.16 5.98 Black and white field between the cathode and the graphene grid. Currently amended
The apparatus of Claim 19 wherein the deformation of the graphene grid is selected to change the electric field in a region proximate to the cathode to increase electron emission from the cathode. Previously presented
The apparatus of Claim 19 further comprising one or more additional grids arranged relative to the cathode and the graphene grid that are configured to modulate the flow of electrons, and wherein the graphene grid is deformable responsive to one or more forces from the one or more additional grids. Previously presented
The apparatus of Claim 19 wherein the graphene grid is pretensioned to adjust the amount of the deformation responsive to [[the]] input. Currently amended
The apparatus of Claim 19 wherein the graphene grid is fabricated such that it is nonhomogenous to facilitate bending of the grid in one or more regions. Previously presented
The apparatus of Claim 19 wherein the cathode further includes insulating supports configured to prohibit contact between the cathode and the graphene grid. Previously presented
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes [[a]] one or more layers of graphene that are one atom thick sheets on a support structure. Currently amended
The apparatus of Claim 25 wherein the support structure includes a layer of material patterned with holes. Original
The apparatus of Claim 25 wherein the support structure includes at least one of a polymer, a silicon oxide, and silicon nitride. Original
The apparatus of Claim 25 wherein the support structure is in contact with the cathode and the graphene grid, and wherein the support structure has a thickness that determines the separation between the cathode and the graphene grid. Original
The apparatus of Claim 25 wherein the support structure includes a metal. Original
The apparatus of Claim 25 wherein the support structure includes an array of carbon nanotubes. Original
The apparatus of Claim 25 wherein the support structure includes lacey carbon. Original
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes nanoribbons of graphene in one or more lav ers that are one atom thick sheets. Currently amended
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes an array of carbon nanotubes and gra p hene in one or more la y ers that are one atom thick sheets. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
vacuum electronic device with multilayer graphene energy-filter grid
vacuum electronic device with deformable graphene grid
Materials described outside the worked examples.
graphene
C
doped graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9. By varying the incident angle 920, this changes the effective thickness of the graphene layers 620, 640 as seen by the incoming bean 940, therefore …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 100–200 eV | — |
— | 20–200 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,056,219Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of an exemplary multi-electrode electronic device. -3- [0012]
FIG. 2 is a schematic illustration of a device in which a grid electrode made of graphene materials is disposed proximate to an anode or cathode electrode. …
FIG. 3 is a schematic illustration of an example graphene sheet in which carbon atoms have been removed to form holes or apertures through which charge …
FIG. 4 is a schematic illustration of an example configuration of a grid electrode made of graphene material that is supported over an underlying electrode by …
FIG. 5 is a schematic illustration of an example arrangement of a pair of electrodes, which may be used in an electronic device. [0016]
FIG. 6. In such an embodiment where the multi-layer graphene grid 600 is incorporated in an electronic device such as electronic device 100 shown in
FIG. 7 is sketched for illustrative purposes, and in some embodiments the reflectivity spectra 700, 710 may deviate from these figures. Further, although the …
FIG. 8. Creating a gap 810 has the effect of moving the minima and maxima (720, 740, 760) of the reflectivity spectrum since energies corresponding to these …
FIG. 9. By varying the incident angle 920, this changes the effective thickness of the graphene layers 620, 640 as seen by the incoming bean 940, therefore …
FIG. 10 is a schematic illustration of a curved multi-layer graphene grid and a cathode with a ridge emitter. [0021]
FIG. 11. For example, the multilayer graphene grid 600 can be incorporated in a vacuum electronic device such as a vacuum tube, a power amplifier, a klystron, a …
FIG. 12. In this embodiment the cathode 1204 and the graphene grid 1206 are operably connected to a power supply to produce an electric field between the …
FIG. 13 is a schematic illustration of graphene grid on a support structure with apertures. DETAILED DESCRIPTION [0024] In the following detailed description, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a first grid configured to receive a flow of electrons in a vacuum device, wherein the first grid includes at least two substantially parallel layers of graphene each bein g one atom thick planar sheets, and wherein the vacuum device is configured with a set of device parameters; wherein the first grid is receptive to a voltage source to produce a voltage in the first grid; and wherein the first grid is configured to transmit electrons in an energy pass band that is at least partially determined by the voltage and the set of device parameters. Currently amended
The apparatus of Claim 1 wherein the voltage is dynamically tunable, and wherein changing the voltage changes the energy pass band. Original
The apparatus of Claim 1 wherein the set of device parameters and the voltage are selected to maximize the transmission of electrons through the first grid for the energy pass band. Original
The apparatus of Claim 1 wherein the set of device parameters are at least partially selected according to a relative amount of inelastic scattering. Original
The apparatus of Claim 1 wherein the set of device parameters includes a spacing between the at least two graphene layers that is at least partially determined by a spacer layer. Original
The apparatus of Claim 1 wherein the set of device parameters includes a number of layers of graphene corresponding to the first grid, where the number of layers of graphene is greater than two. Original
The apparatus of Claim 1 wherein the set of device parameters includes a position of the first grid relative to a cathode and an anode. Original
The apparatus of Claim 1 wherein the set of device parameters includes a voltage bias applied to at least one of a cathode, an anode, and the first grid. Original
The apparatus of Claim 1 further comprising a second grid, and wherein the set of device parameters includes a position of the second grid relative to the first grid, a cathode, and an anode. Original
The apparatus of Claim 1 wherein at least one of the at least two layers of graphene is doped. Original
The apparatus of Claim 1 wherein the set of device parameters includes an incident angle defined by a direction of the flow of electrons and the first grid. Original
The apparatus of Claim 1 wherein the first grid is arranged sufficiently close to a cathode to induce electron emission from the cathode when an electric potential is applied to the first grid in device operation. Original
The apparatus of Claim 1 wherein the grid is characterized by an energy-dependent transmission probability spectrum, and wherein the set of device parameters is selected according to the energy dependent transmission probability spectrum. Original
An apparatus comprising: a cathode and a graphene grid that are configured in a vacuum electronic device, wherein the graphene grid is configured to modulate a flow of electrons from the cathode in device operation and the graphene grid includes one or more layers that are one atom thick sheets; wherein the cathode and the graphene grid are receptive to a voltage to produce an electric field between the cathode and the graphene grid; and wherein the graphene grid is deformable SVG 15603340.03-06-2018.JEG₅S₆GERXEAPX2.CLM.1.svg 0.16 5.98 Black and white field between the cathode and the graphene grid. Currently amended
The apparatus of Claim 19 wherein the deformation of the graphene grid is selected to change the electric field in a region proximate to the cathode to increase electron emission from the cathode. Previously presented
The apparatus of Claim 19 further comprising one or more additional grids arranged relative to the cathode and the graphene grid that are configured to modulate the flow of electrons, and wherein the graphene grid is deformable responsive to one or more forces from the one or more additional grids. Previously presented
The apparatus of Claim 19 wherein the graphene grid is pretensioned to adjust the amount of the deformation responsive to [[the]] input. Currently amended
The apparatus of Claim 19 wherein the graphene grid is fabricated such that it is nonhomogenous to facilitate bending of the grid in one or more regions. Previously presented
The apparatus of Claim 19 wherein the cathode further includes insulating supports configured to prohibit contact between the cathode and the graphene grid. Previously presented
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes [[a]] one or more layers of graphene that are one atom thick sheets on a support structure. Currently amended
The apparatus of Claim 25 wherein the support structure includes a layer of material patterned with holes. Original
The apparatus of Claim 25 wherein the support structure includes at least one of a polymer, a silicon oxide, and silicon nitride. Original
The apparatus of Claim 25 wherein the support structure is in contact with the cathode and the graphene grid, and wherein the support structure has a thickness that determines the separation between the cathode and the graphene grid. Original
The apparatus of Claim 25 wherein the support structure includes a metal. Original
The apparatus of Claim 25 wherein the support structure includes an array of carbon nanotubes. Original
The apparatus of Claim 25 wherein the support structure includes lacey carbon. Original
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes nanoribbons of graphene in one or more lav ers that are one atom thick sheets. Currently amended
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes an array of carbon nanotubes and gra p hene in one or more la y ers that are one atom thick sheets. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
vacuum electronic device with multilayer graphene energy-filter grid
vacuum electronic device with deformable graphene grid
Materials described outside the worked examples.
graphene
C
doped graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9. By varying the incident angle 920, this changes the effective thickness of the graphene layers 620, 640 as seen by the incoming bean 940, therefore …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 100–200 eV | — |
— | 20–200 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,056,219Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic illustration of an exemplary multi-electrode electronic device. -3- [0012]
FIG. 2 is a schematic illustration of a device in which a grid electrode made of graphene materials is disposed proximate to an anode or cathode electrode. …
FIG. 3 is a schematic illustration of an example graphene sheet in which carbon atoms have been removed to form holes or apertures through which charge …
FIG. 4 is a schematic illustration of an example configuration of a grid electrode made of graphene material that is supported over an underlying electrode by …
FIG. 5 is a schematic illustration of an example arrangement of a pair of electrodes, which may be used in an electronic device. [0016]
FIG. 6. In such an embodiment where the multi-layer graphene grid 600 is incorporated in an electronic device such as electronic device 100 shown in
FIG. 7 is sketched for illustrative purposes, and in some embodiments the reflectivity spectra 700, 710 may deviate from these figures. Further, although the …
FIG. 8. Creating a gap 810 has the effect of moving the minima and maxima (720, 740, 760) of the reflectivity spectrum since energies corresponding to these …
FIG. 9. By varying the incident angle 920, this changes the effective thickness of the graphene layers 620, 640 as seen by the incoming bean 940, therefore …
FIG. 10 is a schematic illustration of a curved multi-layer graphene grid and a cathode with a ridge emitter. [0021]
FIG. 11. For example, the multilayer graphene grid 600 can be incorporated in a vacuum electronic device such as a vacuum tube, a power amplifier, a klystron, a …
FIG. 12. In this embodiment the cathode 1204 and the graphene grid 1206 are operably connected to a power supply to produce an electric field between the …
FIG. 13 is a schematic illustration of graphene grid on a support structure with apertures. DETAILED DESCRIPTION [0024] In the following detailed description, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An apparatus comprising: a first grid configured to receive a flow of electrons in a vacuum device, wherein the first grid includes at least two substantially parallel layers of graphene each bein g one atom thick planar sheets, and wherein the vacuum device is configured with a set of device parameters; wherein the first grid is receptive to a voltage source to produce a voltage in the first grid; and wherein the first grid is configured to transmit electrons in an energy pass band that is at least partially determined by the voltage and the set of device parameters. Currently amended
The apparatus of Claim 1 wherein the voltage is dynamically tunable, and wherein changing the voltage changes the energy pass band. Original
The apparatus of Claim 1 wherein the set of device parameters and the voltage are selected to maximize the transmission of electrons through the first grid for the energy pass band. Original
The apparatus of Claim 1 wherein the set of device parameters are at least partially selected according to a relative amount of inelastic scattering. Original
The apparatus of Claim 1 wherein the set of device parameters includes a spacing between the at least two graphene layers that is at least partially determined by a spacer layer. Original
The apparatus of Claim 1 wherein the set of device parameters includes a number of layers of graphene corresponding to the first grid, where the number of layers of graphene is greater than two. Original
The apparatus of Claim 1 wherein the set of device parameters includes a position of the first grid relative to a cathode and an anode. Original
The apparatus of Claim 1 wherein the set of device parameters includes a voltage bias applied to at least one of a cathode, an anode, and the first grid. Original
The apparatus of Claim 1 further comprising a second grid, and wherein the set of device parameters includes a position of the second grid relative to the first grid, a cathode, and an anode. Original
The apparatus of Claim 1 wherein at least one of the at least two layers of graphene is doped. Original
The apparatus of Claim 1 wherein the set of device parameters includes an incident angle defined by a direction of the flow of electrons and the first grid. Original
The apparatus of Claim 1 wherein the first grid is arranged sufficiently close to a cathode to induce electron emission from the cathode when an electric potential is applied to the first grid in device operation. Original
The apparatus of Claim 1 wherein the grid is characterized by an energy-dependent transmission probability spectrum, and wherein the set of device parameters is selected according to the energy dependent transmission probability spectrum. Original
An apparatus comprising: a cathode and a graphene grid that are configured in a vacuum electronic device, wherein the graphene grid is configured to modulate a flow of electrons from the cathode in device operation and the graphene grid includes one or more layers that are one atom thick sheets; wherein the cathode and the graphene grid are receptive to a voltage to produce an electric field between the cathode and the graphene grid; and wherein the graphene grid is deformable SVG 15603340.03-06-2018.JEG₅S₆GERXEAPX2.CLM.1.svg 0.16 5.98 Black and white field between the cathode and the graphene grid. Currently amended
The apparatus of Claim 19 wherein the deformation of the graphene grid is selected to change the electric field in a region proximate to the cathode to increase electron emission from the cathode. Previously presented
The apparatus of Claim 19 further comprising one or more additional grids arranged relative to the cathode and the graphene grid that are configured to modulate the flow of electrons, and wherein the graphene grid is deformable responsive to one or more forces from the one or more additional grids. Previously presented
The apparatus of Claim 19 wherein the graphene grid is pretensioned to adjust the amount of the deformation responsive to [[the]] input. Currently amended
The apparatus of Claim 19 wherein the graphene grid is fabricated such that it is nonhomogenous to facilitate bending of the grid in one or more regions. Previously presented
The apparatus of Claim 19 wherein the cathode further includes insulating supports configured to prohibit contact between the cathode and the graphene grid. Previously presented
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes [[a]] one or more layers of graphene that are one atom thick sheets on a support structure. Currently amended
The apparatus of Claim 25 wherein the support structure includes a layer of material patterned with holes. Original
The apparatus of Claim 25 wherein the support structure includes at least one of a polymer, a silicon oxide, and silicon nitride. Original
The apparatus of Claim 25 wherein the support structure is in contact with the cathode and the graphene grid, and wherein the support structure has a thickness that determines the separation between the cathode and the graphene grid. Original
The apparatus of Claim 25 wherein the support structure includes a metal. Original
The apparatus of Claim 25 wherein the support structure includes an array of carbon nanotubes. Original
The apparatus of Claim 25 wherein the support structure includes lacey carbon. Original
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes nanoribbons of graphene in one or more lav ers that are one atom thick sheets. Currently amended
An apparatus comprising: a cathode and a grid that are configured in a vacuum electronic device, wherein the grid is configured to modulate a flow of electrons from the cathode in device operation; wherein the grid includes an array of carbon nanotubes and gra p hene in one or more la y ers that are one atom thick sheets. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
vacuum electronic device with multilayer graphene energy-filter grid
vacuum electronic device with deformable graphene grid
Materials described outside the worked examples.
graphene
C
doped graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9. By varying the incident angle 920, this changes the effective thickness of the graphene layers 620, 640 as seen by the incoming bean 940, therefore …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
— | 100–200 eV | — |
— | 20–200 eV |
Related documents with shared materials, methods, properties, or citations.
vacuum electronic device with graphene nanoribbon grid
vacuum electronic device with carbon nanotube array and graphene grid
vacuum electronic device (triode/tetrode/pentode/field emission)
silicon oxide
SiO₂
silicon nitride
Si₃N₄
polymer
metal (Ni, Cu, Au, Al, Mo, Ti)
FIG. 12. In this embodiment the cathode 1204 and the graphene grid 1206 are operably connected to a power supply to produce an electric field between the …
durability or according to a desired composite reflectivity spectrum. [0065] In different embodiments, the graphene grids as described herein may include a grid mesh made of intersecting graphene nanoribbons, and/or an array of carbon nanotubes. [0066] In one em
| — |
— | 0–6 ev | — |
— | 14–21 eV | — |
— | ≤ 50 eV | — |
— | ≤ 40 eV | — |
— | ≤ 4 eV | — |
Thickness | ≥ 10 nm | — |
GRAPHENE FOAM-BASED SEALING MATERIALS
vacuum electronic device with graphene nanoribbon grid
vacuum electronic device with carbon nanotube array and graphene grid
vacuum electronic device (triode/tetrode/pentode/field emission)
silicon oxide
SiO₂
silicon nitride
Si₃N₄
polymer
metal (Ni, Cu, Au, Al, Mo, Ti)
FIG. 12. In this embodiment the cathode 1204 and the graphene grid 1206 are operably connected to a power supply to produce an electric field between the …
durability or according to a desired composite reflectivity spectrum. [0065] In different embodiments, the graphene grids as described herein may include a grid mesh made of intersecting graphene nanoribbons, and/or an array of carbon nanotubes. [0066] In one em
| — |
— | 0–6 ev | — |
— | 14–21 eV | — |
— | ≤ 50 eV | — |
— | ≤ 40 eV | — |
— | ≤ 4 eV | — |
Thickness | ≥ 10 nm | — |
GRAPHENE FOAM-BASED SEALING MATERIALS
vacuum electronic device with graphene nanoribbon grid
vacuum electronic device with carbon nanotube array and graphene grid
vacuum electronic device (triode/tetrode/pentode/field emission)
silicon oxide
SiO₂
silicon nitride
Si₃N₄
polymer
metal (Ni, Cu, Au, Al, Mo, Ti)
FIG. 12. In this embodiment the cathode 1204 and the graphene grid 1206 are operably connected to a power supply to produce an electric field between the …
durability or according to a desired composite reflectivity spectrum. [0065] In different embodiments, the graphene grids as described herein may include a grid mesh made of intersecting graphene nanoribbons, and/or an array of carbon nanotubes. [0066] In one em
| — |
— | 0–6 ev | — |
— | 14–21 eV | — |
— | ≤ 50 eV | — |
— | ≤ 40 eV | — |
— | ≤ 4 eV | — |
Thickness | ≥ 10 nm | — |
GRAPHENE FOAM-BASED SEALING MATERIALS
vacuum electronic device with graphene nanoribbon grid
vacuum electronic device with carbon nanotube array and graphene grid
vacuum electronic device (triode/tetrode/pentode/field emission)
silicon oxide
SiO₂
silicon nitride
Si₃N₄
polymer
metal (Ni, Cu, Au, Al, Mo, Ti)
FIG. 12. In this embodiment the cathode 1204 and the graphene grid 1206 are operably connected to a power supply to produce an electric field between the …
durability or according to a desired composite reflectivity spectrum. [0065] In different embodiments, the graphene grids as described herein may include a grid mesh made of intersecting graphene nanoribbons, and/or an array of carbon nanotubes. [0066] In one em
| — |
— | 0–6 ev | — |
— | 14–21 eV | — |
— | ≤ 50 eV | — |
— | ≤ 40 eV | — |
— | ≤ 4 eV | — |
Thickness | ≥ 10 nm | — |
GRAPHENE FOAM-BASED SEALING MATERIALS
