Patent
Atlas literature
Patent
US 11,810,783 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1H is a cross-sectional view illustrating a manufac- turing process of the semiconductor device subsequent to
FIG. 2 is a map showing irradiation positions of laser irradiation;
FIG. 3 is an enlarged view of a part of the irradiation position of the laser irradiation shown in
FIG. 4B is an exaggerated view of a cross section of the other surface of the chip formation wafer after the flattening step;
FIG. 5B is a diagram showing I-V characteristics of a semiconductor chip constituting a GaN semiconductor device in a comparative example; and
FIG. 6 is a schematic diagram of an I-V evaluation system for evaluating the I-V characteristics shown in
FIG. 8. It should be noted that in this disclosure (including the abstract, drawings, description, and claims), the terms “convex” and “concave” are used with …
FIG. 13, each semiconductor chip 100 is configured by individualizing the chip formation wafer 30 into chip units by a dicing saw, laser dicing, or the 40 like. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
According to this, for example, even when the wafer transformation layer 15 is formed in the GaN wafer 1, it becomes easy to remain a thickness equal to or more than a B₂ predetermined thickness as the recycle wafer 40, and the number of times that the recycle wafer can be recycled can be increased. Further, in the first and second embodiments, the step of forming the wafer transformation layer 15 of FIG. 1E may be performed before the step of arranging the support member 20 of FIG. 1D. In this case, the laser beam L may be irradiated from the one surface 10a of the processed wafer 10. Here, when the laser beam L is irradiated from the one surface 10a of the processed wafer 10, the position of the condensing point of the laser beam L may vary depend-ing on the surface electrode, the wiring pattern, or the like formed on the one surface 10a side. Therefore, it may be preferable to irradiate the laser beam from the other surface 10b of the processed wafer 10. While the present disclosure has been described with reference to embodiments thereof, it is to be understood that the disclosure is not limited to the embodiments and con-structions. The present disclosure is intended to cover vari-ous modification and equivalent arrangements. In addition, while the various combinations and configurations, other combinations and configurations, including more, less or only a single element, are also within the spirit and scope of the present disclosure. What is claimed is:
The gallium nitride semiconductor device according to claim 1, wherein: a height of each of the plurality of convex portions from an adjacent concave portion is in a range between 5 µm and 30 µm.
The gallium nitride semiconductor device according to claim 1, wherein: a surface of each of the concave portions includes a surface roughness provided by a nitrogen vacancy and a laser irradiation mark.
The gallium nitride semiconductor device according to claim 1, wherein: the other surface of the chip formation substrate in contact with the metal film is made of n type gallium nitride.
The gallium nitride semiconductor device according to claim 1, wherein: no liquid gallium exists between the other surface and the metal film. 15 16
The gallium nitride semiconductor device according to claim 1, wherein: some parts of the metal film entering the concave portions provide wedges having different maximum heights.
The gallium nitride semiconductor device according to claim 1, wherein: a side surface of each convex portion has a surface roughness finer than a predetermined value due to a nitrogen vacancy and a dent. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
vertical gallium nitride semiconductor device
Materials described outside the worked examples.
gallium nitride
GaN
metal film (ohmic contact with n-GaN)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5B is a diagram showing I-V characteristics of a semiconductor chip constituting a GaN semiconductor device in a comparative example; and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
height of convex portions from adjacent concave portion | 5–30 µm | GaN |
n-type GaN wafer dopant concentration | 500000000000000000–50000000000000000000 cm⁻³ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,810,783 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1H is a cross-sectional view illustrating a manufac- turing process of the semiconductor device subsequent to
FIG. 2 is a map showing irradiation positions of laser irradiation;
FIG. 3 is an enlarged view of a part of the irradiation position of the laser irradiation shown in
FIG. 4B is an exaggerated view of a cross section of the other surface of the chip formation wafer after the flattening step;
FIG. 5B is a diagram showing I-V characteristics of a semiconductor chip constituting a GaN semiconductor device in a comparative example; and
FIG. 6 is a schematic diagram of an I-V evaluation system for evaluating the I-V characteristics shown in
FIG. 8. It should be noted that in this disclosure (including the abstract, drawings, description, and claims), the terms “convex” and “concave” are used with …
FIG. 13, each semiconductor chip 100 is configured by individualizing the chip formation wafer 30 into chip units by a dicing saw, laser dicing, or the 40 like. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
According to this, for example, even when the wafer transformation layer 15 is formed in the GaN wafer 1, it becomes easy to remain a thickness equal to or more than a B₂ predetermined thickness as the recycle wafer 40, and the number of times that the recycle wafer can be recycled can be increased. Further, in the first and second embodiments, the step of forming the wafer transformation layer 15 of FIG. 1E may be performed before the step of arranging the support member 20 of FIG. 1D. In this case, the laser beam L may be irradiated from the one surface 10a of the processed wafer 10. Here, when the laser beam L is irradiated from the one surface 10a of the processed wafer 10, the position of the condensing point of the laser beam L may vary depend-ing on the surface electrode, the wiring pattern, or the like formed on the one surface 10a side. Therefore, it may be preferable to irradiate the laser beam from the other surface 10b of the processed wafer 10. While the present disclosure has been described with reference to embodiments thereof, it is to be understood that the disclosure is not limited to the embodiments and con-structions. The present disclosure is intended to cover vari-ous modification and equivalent arrangements. In addition, while the various combinations and configurations, other combinations and configurations, including more, less or only a single element, are also within the spirit and scope of the present disclosure. What is claimed is:
The gallium nitride semiconductor device according to claim 1, wherein: a height of each of the plurality of convex portions from an adjacent concave portion is in a range between 5 µm and 30 µm.
The gallium nitride semiconductor device according to claim 1, wherein: a surface of each of the concave portions includes a surface roughness provided by a nitrogen vacancy and a laser irradiation mark.
The gallium nitride semiconductor device according to claim 1, wherein: the other surface of the chip formation substrate in contact with the metal film is made of n type gallium nitride.
The gallium nitride semiconductor device according to claim 1, wherein: no liquid gallium exists between the other surface and the metal film. 15 16
The gallium nitride semiconductor device according to claim 1, wherein: some parts of the metal film entering the concave portions provide wedges having different maximum heights.
The gallium nitride semiconductor device according to claim 1, wherein: a side surface of each convex portion has a surface roughness finer than a predetermined value due to a nitrogen vacancy and a dent. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
vertical gallium nitride semiconductor device
Materials described outside the worked examples.
gallium nitride
GaN
metal film (ohmic contact with n-GaN)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5B is a diagram showing I-V characteristics of a semiconductor chip constituting a GaN semiconductor device in a comparative example; and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
height of convex portions from adjacent concave portion | 5–30 µm | GaN |
n-type GaN wafer dopant concentration | 500000000000000000–50000000000000000000 cm⁻³ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,810,783 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1H is a cross-sectional view illustrating a manufac- turing process of the semiconductor device subsequent to
FIG. 2 is a map showing irradiation positions of laser irradiation;
FIG. 3 is an enlarged view of a part of the irradiation position of the laser irradiation shown in
FIG. 4B is an exaggerated view of a cross section of the other surface of the chip formation wafer after the flattening step;
FIG. 5B is a diagram showing I-V characteristics of a semiconductor chip constituting a GaN semiconductor device in a comparative example; and
FIG. 6 is a schematic diagram of an I-V evaluation system for evaluating the I-V characteristics shown in
FIG. 8. It should be noted that in this disclosure (including the abstract, drawings, description, and claims), the terms “convex” and “concave” are used with …
FIG. 13, each semiconductor chip 100 is configured by individualizing the chip formation wafer 30 into chip units by a dicing saw, laser dicing, or the 40 like. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
According to this, for example, even when the wafer transformation layer 15 is formed in the GaN wafer 1, it becomes easy to remain a thickness equal to or more than a B₂ predetermined thickness as the recycle wafer 40, and the number of times that the recycle wafer can be recycled can be increased. Further, in the first and second embodiments, the step of forming the wafer transformation layer 15 of FIG. 1E may be performed before the step of arranging the support member 20 of FIG. 1D. In this case, the laser beam L may be irradiated from the one surface 10a of the processed wafer 10. Here, when the laser beam L is irradiated from the one surface 10a of the processed wafer 10, the position of the condensing point of the laser beam L may vary depend-ing on the surface electrode, the wiring pattern, or the like formed on the one surface 10a side. Therefore, it may be preferable to irradiate the laser beam from the other surface 10b of the processed wafer 10. While the present disclosure has been described with reference to embodiments thereof, it is to be understood that the disclosure is not limited to the embodiments and con-structions. The present disclosure is intended to cover vari-ous modification and equivalent arrangements. In addition, while the various combinations and configurations, other combinations and configurations, including more, less or only a single element, are also within the spirit and scope of the present disclosure. What is claimed is:
The gallium nitride semiconductor device according to claim 1, wherein: a height of each of the plurality of convex portions from an adjacent concave portion is in a range between 5 µm and 30 µm.
The gallium nitride semiconductor device according to claim 1, wherein: a surface of each of the concave portions includes a surface roughness provided by a nitrogen vacancy and a laser irradiation mark.
The gallium nitride semiconductor device according to claim 1, wherein: the other surface of the chip formation substrate in contact with the metal film is made of n type gallium nitride.
The gallium nitride semiconductor device according to claim 1, wherein: no liquid gallium exists between the other surface and the metal film. 15 16
The gallium nitride semiconductor device according to claim 1, wherein: some parts of the metal film entering the concave portions provide wedges having different maximum heights.
The gallium nitride semiconductor device according to claim 1, wherein: a side surface of each convex portion has a surface roughness finer than a predetermined value due to a nitrogen vacancy and a dent. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
vertical gallium nitride semiconductor device
Materials described outside the worked examples.
gallium nitride
GaN
metal film (ohmic contact with n-GaN)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5B is a diagram showing I-V characteristics of a semiconductor chip constituting a GaN semiconductor device in a comparative example; and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
height of convex portions from adjacent concave portion | 5–30 µm | GaN |
n-type GaN wafer dopant concentration | 500000000000000000–50000000000000000000 cm⁻³ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,810,783 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1H is a cross-sectional view illustrating a manufac- turing process of the semiconductor device subsequent to
FIG. 2 is a map showing irradiation positions of laser irradiation;
FIG. 3 is an enlarged view of a part of the irradiation position of the laser irradiation shown in
FIG. 4B is an exaggerated view of a cross section of the other surface of the chip formation wafer after the flattening step;
FIG. 5B is a diagram showing I-V characteristics of a semiconductor chip constituting a GaN semiconductor device in a comparative example; and
FIG. 6 is a schematic diagram of an I-V evaluation system for evaluating the I-V characteristics shown in
FIG. 8. It should be noted that in this disclosure (including the abstract, drawings, description, and claims), the terms “convex” and “concave” are used with …
FIG. 13, each semiconductor chip 100 is configured by individualizing the chip formation wafer 30 into chip units by a dicing saw, laser dicing, or the 40 like. …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
According to this, for example, even when the wafer transformation layer 15 is formed in the GaN wafer 1, it becomes easy to remain a thickness equal to or more than a B₂ predetermined thickness as the recycle wafer 40, and the number of times that the recycle wafer can be recycled can be increased. Further, in the first and second embodiments, the step of forming the wafer transformation layer 15 of FIG. 1E may be performed before the step of arranging the support member 20 of FIG. 1D. In this case, the laser beam L may be irradiated from the one surface 10a of the processed wafer 10. Here, when the laser beam L is irradiated from the one surface 10a of the processed wafer 10, the position of the condensing point of the laser beam L may vary depend-ing on the surface electrode, the wiring pattern, or the like formed on the one surface 10a side. Therefore, it may be preferable to irradiate the laser beam from the other surface 10b of the processed wafer 10. While the present disclosure has been described with reference to embodiments thereof, it is to be understood that the disclosure is not limited to the embodiments and con-structions. The present disclosure is intended to cover vari-ous modification and equivalent arrangements. In addition, while the various combinations and configurations, other combinations and configurations, including more, less or only a single element, are also within the spirit and scope of the present disclosure. What is claimed is:
The gallium nitride semiconductor device according to claim 1, wherein: a height of each of the plurality of convex portions from an adjacent concave portion is in a range between 5 µm and 30 µm.
The gallium nitride semiconductor device according to claim 1, wherein: a surface of each of the concave portions includes a surface roughness provided by a nitrogen vacancy and a laser irradiation mark.
The gallium nitride semiconductor device according to claim 1, wherein: the other surface of the chip formation substrate in contact with the metal film is made of n type gallium nitride.
The gallium nitride semiconductor device according to claim 1, wherein: no liquid gallium exists between the other surface and the metal film. 15 16
The gallium nitride semiconductor device according to claim 1, wherein: some parts of the metal film entering the concave portions provide wedges having different maximum heights.
The gallium nitride semiconductor device according to claim 1, wherein: a side surface of each convex portion has a surface roughness finer than a predetermined value due to a nitrogen vacancy and a dent. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
vertical gallium nitride semiconductor device
Materials described outside the worked examples.
gallium nitride
GaN
metal film (ohmic contact with n-GaN)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5B is a diagram showing I-V characteristics of a semiconductor chip constituting a GaN semiconductor device in a comparative example; and
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
height of convex portions from adjacent concave portion | 5–30 µm | GaN |
n-type GaN wafer dopant concentration | 500000000000000000–50000000000000000000 cm⁻³ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
FIG. 6 is a schematic diagram of an I-V evaluation system for evaluating the I-V characteristics shown in
GaN wafer thickness | — | GaN |
Thickness | 10–60 µm | — |
Thickness | 8–10 µm | — |
Thickness | 10–200 µm | — |
Cited non-patent literature · 2
FIG. 6 is a schematic diagram of an I-V evaluation system for evaluating the I-V characteristics shown in
GaN wafer thickness | — | GaN |
Thickness | 10–60 µm | — |
Thickness | 8–10 µm | — |
Thickness | 10–200 µm | — |
Cited non-patent literature · 2
FIG. 6 is a schematic diagram of an I-V evaluation system for evaluating the I-V characteristics shown in
GaN wafer thickness | — | GaN |
Thickness | 10–60 µm | — |
Thickness | 8–10 µm | — |
Thickness | 10–200 µm | — |
Cited non-patent literature · 2
FIG. 6 is a schematic diagram of an I-V evaluation system for evaluating the I-V characteristics shown in
GaN wafer thickness | — | GaN |
Thickness | 10–60 µm | — |
Thickness | 8–10 µm | — |
Thickness | 10–200 µm | — |
Cited non-patent literature · 2
