Patent
US 11,107,946MICRO-LED TRANSFER METHOD, MANUFACTURING METHOD AND DEVICE
Xiangxu FENG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,107,946Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-10. Canceled
Canceled
A micro-LED transfer method, comprising: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate, and then fabricating metal electrodes; forming bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding metal electrodes of the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate, wherein, epitaxially growing micro- LEDs of two or all of the three colors on a GaAs original substrate comprises: epitaxially growing a layer of I nGaAs on the GaAs original substrate, and then epitaxially growing the micro-LEDs of the two or all of the three colors on the layer of I nGaAs 1 wherein, epitaxially growing micro- LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate comprises: providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxially growing blue micro-LEDs, and then epitaxially growing the blue micro-LEDs on areas not covered by the mask; or providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxiall y grow green micro-LEDs, and then epitaxiall y growing the green micro-LEDs on areas not covered by the mask; or providing masks on corresponding areas of the single GaAs original substrate not required for epitaxially grow red micro-LEDs, and then epitaxially growing the red micro- LEDs on areas not covered by the mask. Currently amended
The method according to claim 11, wherein, removing the original substrate comprises: removing the GaAs original substrate by means of wet etching. Previously presented
The method according to claim 11, wherein, removing the GaAs original substrate comprises: removing the GaAs original substrate by means of laser lifting-off. Previously presented
The method according to claim 11, wherein, the melting point of the bumping electrodes is lower than or equal to 350 °C. Previously presented
The method according to claim 11, wherein, epitaxially growing micro- LEDs of two or all of the three colors on a GaAs original substrate comprises: epitaxially growing the micro-LEDs of the two or all of the three colors on the (111) or (100) crystal face of the GaAs original substrate. Original
The method according to claim 11, wherein, at least blue micro-LEDs are epitaxially grown on the single GaAs original substrate, the blue micro- LEDs being epitaxially grown from a GaN material; or at least green micro-LEDs are epitaxially grown on the single GaAs original substrate, the green micro-LED being epitaxially grown from the GaN material; or at least red micro-LEDs are epitaxially grown on the single GaAs original substrate, the red micro-LED being epitaxially grown from the GaAs material. Currently amended
The method according to claim 11, wherein, N-electrodes and P-electrodes of the micro-LEDs are located at the same side, with each of the micro- LEDs corresponding to two of the bumping electrodes on the receiving substrate; or N-electrodes and P-electrodes of the micro-LEDs are located at opposed sides, with each of the micro-LEDs corresponding to one of the bumping electrodes on the receiving substrate. Previously presented
A manufacturing method for manufacturing a micro-LED device, comprising transferring micro-LEDs to a receiving substrate by using the method according to claim 11. Previously presented
,,,,,. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
micro-LED (blue, green, red) on GaAs original substrate transferred to receiving substrate
Materials described outside the worked examples.
GaAs
InGaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
InGaAs bandgap threshold for laser liftoff opacity at 1064 nm | 1.165 eV | InGaAs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,107,946Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-10. Canceled
Canceled
A micro-LED transfer method, comprising: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate, and then fabricating metal electrodes; forming bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding metal electrodes of the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate, wherein, epitaxially growing micro- LEDs of two or all of the three colors on a GaAs original substrate comprises: epitaxially growing a layer of I nGaAs on the GaAs original substrate, and then epitaxially growing the micro-LEDs of the two or all of the three colors on the layer of I nGaAs 1 wherein, epitaxially growing micro- LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate comprises: providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxially growing blue micro-LEDs, and then epitaxially growing the blue micro-LEDs on areas not covered by the mask; or providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxiall y grow green micro-LEDs, and then epitaxiall y growing the green micro-LEDs on areas not covered by the mask; or providing masks on corresponding areas of the single GaAs original substrate not required for epitaxially grow red micro-LEDs, and then epitaxially growing the red micro- LEDs on areas not covered by the mask. Currently amended
The method according to claim 11, wherein, removing the original substrate comprises: removing the GaAs original substrate by means of wet etching. Previously presented
The method according to claim 11, wherein, removing the GaAs original substrate comprises: removing the GaAs original substrate by means of laser lifting-off. Previously presented
The method according to claim 11, wherein, the melting point of the bumping electrodes is lower than or equal to 350 °C. Previously presented
The method according to claim 11, wherein, epitaxially growing micro- LEDs of two or all of the three colors on a GaAs original substrate comprises: epitaxially growing the micro-LEDs of the two or all of the three colors on the (111) or (100) crystal face of the GaAs original substrate. Original
The method according to claim 11, wherein, at least blue micro-LEDs are epitaxially grown on the single GaAs original substrate, the blue micro- LEDs being epitaxially grown from a GaN material; or at least green micro-LEDs are epitaxially grown on the single GaAs original substrate, the green micro-LED being epitaxially grown from the GaN material; or at least red micro-LEDs are epitaxially grown on the single GaAs original substrate, the red micro-LED being epitaxially grown from the GaAs material. Currently amended
The method according to claim 11, wherein, N-electrodes and P-electrodes of the micro-LEDs are located at the same side, with each of the micro- LEDs corresponding to two of the bumping electrodes on the receiving substrate; or N-electrodes and P-electrodes of the micro-LEDs are located at opposed sides, with each of the micro-LEDs corresponding to one of the bumping electrodes on the receiving substrate. Previously presented
A manufacturing method for manufacturing a micro-LED device, comprising transferring micro-LEDs to a receiving substrate by using the method according to claim 11. Previously presented
,,,,,. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
micro-LED (blue, green, red) on GaAs original substrate transferred to receiving substrate
Materials described outside the worked examples.
GaAs
InGaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
InGaAs bandgap threshold for laser liftoff opacity at 1064 nm | 1.165 eV | InGaAs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,107,946Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-10. Canceled
Canceled
A micro-LED transfer method, comprising: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate, and then fabricating metal electrodes; forming bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding metal electrodes of the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate, wherein, epitaxially growing micro- LEDs of two or all of the three colors on a GaAs original substrate comprises: epitaxially growing a layer of I nGaAs on the GaAs original substrate, and then epitaxially growing the micro-LEDs of the two or all of the three colors on the layer of I nGaAs 1 wherein, epitaxially growing micro- LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate comprises: providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxially growing blue micro-LEDs, and then epitaxially growing the blue micro-LEDs on areas not covered by the mask; or providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxiall y grow green micro-LEDs, and then epitaxiall y growing the green micro-LEDs on areas not covered by the mask; or providing masks on corresponding areas of the single GaAs original substrate not required for epitaxially grow red micro-LEDs, and then epitaxially growing the red micro- LEDs on areas not covered by the mask. Currently amended
The method according to claim 11, wherein, removing the original substrate comprises: removing the GaAs original substrate by means of wet etching. Previously presented
The method according to claim 11, wherein, removing the GaAs original substrate comprises: removing the GaAs original substrate by means of laser lifting-off. Previously presented
The method according to claim 11, wherein, the melting point of the bumping electrodes is lower than or equal to 350 °C. Previously presented
The method according to claim 11, wherein, epitaxially growing micro- LEDs of two or all of the three colors on a GaAs original substrate comprises: epitaxially growing the micro-LEDs of the two or all of the three colors on the (111) or (100) crystal face of the GaAs original substrate. Original
The method according to claim 11, wherein, at least blue micro-LEDs are epitaxially grown on the single GaAs original substrate, the blue micro- LEDs being epitaxially grown from a GaN material; or at least green micro-LEDs are epitaxially grown on the single GaAs original substrate, the green micro-LED being epitaxially grown from the GaN material; or at least red micro-LEDs are epitaxially grown on the single GaAs original substrate, the red micro-LED being epitaxially grown from the GaAs material. Currently amended
The method according to claim 11, wherein, N-electrodes and P-electrodes of the micro-LEDs are located at the same side, with each of the micro- LEDs corresponding to two of the bumping electrodes on the receiving substrate; or N-electrodes and P-electrodes of the micro-LEDs are located at opposed sides, with each of the micro-LEDs corresponding to one of the bumping electrodes on the receiving substrate. Previously presented
A manufacturing method for manufacturing a micro-LED device, comprising transferring micro-LEDs to a receiving substrate by using the method according to claim 11. Previously presented
,,,,,. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
micro-LED (blue, green, red) on GaAs original substrate transferred to receiving substrate
Materials described outside the worked examples.
GaAs
InGaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
InGaAs bandgap threshold for laser liftoff opacity at 1064 nm | 1.165 eV | InGaAs |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,107,946Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-10. Canceled
Canceled
A micro-LED transfer method, comprising: in accordance with a sequence of micro-LEDs of blue, green and red, epitaxially growing micro-LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate, and then fabricating metal electrodes; forming bumping electrodes corresponding to the micro-LEDs on a receiving substrate; bonding metal electrodes of the micro-LEDs of the two or all of the three colors with the bumping electrodes on the receiving substrate; and removing the GaAs original substrate, wherein, epitaxially growing micro- LEDs of two or all of the three colors on a GaAs original substrate comprises: epitaxially growing a layer of I nGaAs on the GaAs original substrate, and then epitaxially growing the micro-LEDs of the two or all of the three colors on the layer of I nGaAs 1 wherein, epitaxially growing micro- LEDs of two or all of the three colors on corresponding selected areas of a single GaAs original substrate comprises: providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxially growing blue micro-LEDs, and then epitaxially growing the blue micro-LEDs on areas not covered by the mask; or providing a mask on corresponding areas of the single GaAs original substrate not required for epitaxiall y grow green micro-LEDs, and then epitaxiall y growing the green micro-LEDs on areas not covered by the mask; or providing masks on corresponding areas of the single GaAs original substrate not required for epitaxially grow red micro-LEDs, and then epitaxially growing the red micro- LEDs on areas not covered by the mask. Currently amended
The method according to claim 11, wherein, removing the original substrate comprises: removing the GaAs original substrate by means of wet etching. Previously presented
The method according to claim 11, wherein, removing the GaAs original substrate comprises: removing the GaAs original substrate by means of laser lifting-off. Previously presented
The method according to claim 11, wherein, the melting point of the bumping electrodes is lower than or equal to 350 °C. Previously presented
The method according to claim 11, wherein, epitaxially growing micro- LEDs of two or all of the three colors on a GaAs original substrate comprises: epitaxially growing the micro-LEDs of the two or all of the three colors on the (111) or (100) crystal face of the GaAs original substrate. Original
The method according to claim 11, wherein, at least blue micro-LEDs are epitaxially grown on the single GaAs original substrate, the blue micro- LEDs being epitaxially grown from a GaN material; or at least green micro-LEDs are epitaxially grown on the single GaAs original substrate, the green micro-LED being epitaxially grown from the GaN material; or at least red micro-LEDs are epitaxially grown on the single GaAs original substrate, the red micro-LED being epitaxially grown from the GaAs material. Currently amended
The method according to claim 11, wherein, N-electrodes and P-electrodes of the micro-LEDs are located at the same side, with each of the micro- LEDs corresponding to two of the bumping electrodes on the receiving substrate; or N-electrodes and P-electrodes of the micro-LEDs are located at opposed sides, with each of the micro-LEDs corresponding to one of the bumping electrodes on the receiving substrate. Previously presented
A manufacturing method for manufacturing a micro-LED device, comprising transferring micro-LEDs to a receiving substrate by using the method according to claim 11. Previously presented
,,,,,. Canceled
Layer stacks claimed or described, ordered top of device to substrate.
micro-LED (blue, green, red) on GaAs original substrate transferred to receiving substrate
Materials described outside the worked examples.
GaAs
InGaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
InGaAs bandgap threshold for laser liftoff opacity at 1064 nm | 1.165 eV | InGaAs |
Related documents with shared materials, methods, properties, or citations.
blue micro-LED (vertical or horizontal configuration)
GaN
low-melting-point bumping electrode materials (Bi, Sn, Pb, In or alloys)
Indium
In
| 850–860 °C |
| — |
Temperature | 500–600 °C | — |
blue micro-LED (vertical or horizontal configuration)
GaN
low-melting-point bumping electrode materials (Bi, Sn, Pb, In or alloys)
Indium
In
| 850–860 °C |
| — |
Temperature | 500–600 °C | — |
blue micro-LED (vertical or horizontal configuration)
GaN
low-melting-point bumping electrode materials (Bi, Sn, Pb, In or alloys)
Indium
In
| 850–860 °C |
| — |
Temperature | 500–600 °C | — |
blue micro-LED (vertical or horizontal configuration)
GaN
low-melting-point bumping electrode materials (Bi, Sn, Pb, In or alloys)
Indium
In
| 850–860 °C |
| — |
Temperature | 500–600 °C | — |