Patent
US 9,318,639GALLIUM ARSENIDE AVALANCHE PHOTODIODE
James A. Tatum, James R. Baird
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,318,639Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 includes an illustration of a transceiver. [028] Figure l A includes an illustration of a receiver having an array of photodiodes. -7- [029]
Figure 2 includes an illustration of an embodiment of an avalanche photodiode with an N-type active region formed by an interrupted growth process. [030]
Figure 3 includes an illustration of an embodiment of an avalanche photodiode with an N-type active region having selective implantation to reduce conductivity in the 5 implanted areas. [031]
Figure 3A includes an illustration of an embodiment of an avalanche photodiode with an N-type active region having an N-type GaAs layer extending across the photodiode between slopes of a mesa. [032]
Figure 4 includes an illustration of an embodiment of an avalanche photodiode 10 with a P-type active region. [033]
Figure 4A includes an illustration of another embodiment of an avalanche photodiode with a P-type active region. [034]
Figure 5 includes an illustration of an interrupted growth process for preparing an avalanche photodiode. 15 [035]
Figure 6 includes an illustration of a portion of a wafer having a plurality of avalanche photodiode chips. [036]
Figure 7 includes an illustration of an avalanche photodiode chip. [037]
Figure 8 includes a view of an intermediate avalanche photodiode during manufacture having an oxide layer. 20 [038]
Figure 9 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa. [039]
Figure 10 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa, with the passivation layer having etched openings for anode and cathode contact areas. 25 [040]
Figure 11 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa, with the passivation layer having anode and cathode contacts therein. [041]
Figure 12 includes a compositional and doping diagram of an embodiment of an avalanche photodiode. 30 [042]
Figure 13 includes an E -field diagram of an embodiment of an avalanche photodiode. -8-
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs[[.]] an N absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N absorption layer; and a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the N absorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer.
The avalanche photodiode of claim 1 [[2]], wherein the N-type layer extends across the N absorption layer.
The avalanche photodiode of claim 1 [[5]], wherein the lower conductivity layer having a conductivity reducing implant compared to conductivity of the N-type layer.
The avalanche photodiode of claim 1 [[2]], comprising a window layer above the N-type layer, and an anode contact above the window layer.
The avalanche photodiode of claim 1 [[5]], comprising a window layer above the N-type layer and above the N absorption layer, the window layer including the lower conductivity layer, and an anode contact above the window layer.
The avalanche photodiode of claim 1, An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs; a P absorption layer extending across the avalanche region; [[and]] an P-type layer below at least a center portion of the P absorption layer; and a lower conductivity region laterally from the P-type layer to a surface of the avalanche region and below a perimeter portion of the P absorption layer, the lower conductivity region having lower conductivity compared to the P-type layer.
canceled
canceled
Page 4 of 7 Application No. 14/488,038 Attorney Docket Number F1002.12475US 02 Responsive to Office Action dated canceled
An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs; an N absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N absorption layer; and an N + ba rr ier layer below the N absorption layer, an N + conduction layer below the N + barr ier layer, a substrate below the N + conduction layer, and a cathode contact coupled with the N+ conduction layer. Page 5 of 7
Layer stacks claimed or described, ordered top of device to substrate.
N-type avalanche photodiode (mesa structure)
Materials described outside the worked examples.
GaAs
P-type window layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 12–25 V | — |
Thickness | 0.5–1.5 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,318,639Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 includes an illustration of a transceiver. [028] Figure l A includes an illustration of a receiver having an array of photodiodes. -7- [029]
Figure 2 includes an illustration of an embodiment of an avalanche photodiode with an N-type active region formed by an interrupted growth process. [030]
Figure 3 includes an illustration of an embodiment of an avalanche photodiode with an N-type active region having selective implantation to reduce conductivity in the 5 implanted areas. [031]
Figure 3A includes an illustration of an embodiment of an avalanche photodiode with an N-type active region having an N-type GaAs layer extending across the photodiode between slopes of a mesa. [032]
Figure 4 includes an illustration of an embodiment of an avalanche photodiode 10 with a P-type active region. [033]
Figure 4A includes an illustration of another embodiment of an avalanche photodiode with a P-type active region. [034]
Figure 5 includes an illustration of an interrupted growth process for preparing an avalanche photodiode. 15 [035]
Figure 6 includes an illustration of a portion of a wafer having a plurality of avalanche photodiode chips. [036]
Figure 7 includes an illustration of an avalanche photodiode chip. [037]
Figure 8 includes a view of an intermediate avalanche photodiode during manufacture having an oxide layer. 20 [038]
Figure 9 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa. [039]
Figure 10 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa, with the passivation layer having etched openings for anode and cathode contact areas. 25 [040]
Figure 11 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa, with the passivation layer having anode and cathode contacts therein. [041]
Figure 12 includes a compositional and doping diagram of an embodiment of an avalanche photodiode. 30 [042]
Figure 13 includes an E -field diagram of an embodiment of an avalanche photodiode. -8-
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs[[.]] an N absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N absorption layer; and a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the N absorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer.
The avalanche photodiode of claim 1 [[2]], wherein the N-type layer extends across the N absorption layer.
The avalanche photodiode of claim 1 [[5]], wherein the lower conductivity layer having a conductivity reducing implant compared to conductivity of the N-type layer.
The avalanche photodiode of claim 1 [[2]], comprising a window layer above the N-type layer, and an anode contact above the window layer.
The avalanche photodiode of claim 1 [[5]], comprising a window layer above the N-type layer and above the N absorption layer, the window layer including the lower conductivity layer, and an anode contact above the window layer.
The avalanche photodiode of claim 1, An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs; a P absorption layer extending across the avalanche region; [[and]] an P-type layer below at least a center portion of the P absorption layer; and a lower conductivity region laterally from the P-type layer to a surface of the avalanche region and below a perimeter portion of the P absorption layer, the lower conductivity region having lower conductivity compared to the P-type layer.
canceled
canceled
Page 4 of 7 Application No. 14/488,038 Attorney Docket Number F1002.12475US 02 Responsive to Office Action dated canceled
An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs; an N absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N absorption layer; and an N + ba rr ier layer below the N absorption layer, an N + conduction layer below the N + barr ier layer, a substrate below the N + conduction layer, and a cathode contact coupled with the N+ conduction layer. Page 5 of 7
Layer stacks claimed or described, ordered top of device to substrate.
N-type avalanche photodiode (mesa structure)
Materials described outside the worked examples.
GaAs
P-type window layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 12–25 V | — |
Thickness | 0.5–1.5 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,318,639Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 includes an illustration of a transceiver. [028] Figure l A includes an illustration of a receiver having an array of photodiodes. -7- [029]
Figure 2 includes an illustration of an embodiment of an avalanche photodiode with an N-type active region formed by an interrupted growth process. [030]
Figure 3 includes an illustration of an embodiment of an avalanche photodiode with an N-type active region having selective implantation to reduce conductivity in the 5 implanted areas. [031]
Figure 3A includes an illustration of an embodiment of an avalanche photodiode with an N-type active region having an N-type GaAs layer extending across the photodiode between slopes of a mesa. [032]
Figure 4 includes an illustration of an embodiment of an avalanche photodiode 10 with a P-type active region. [033]
Figure 4A includes an illustration of another embodiment of an avalanche photodiode with a P-type active region. [034]
Figure 5 includes an illustration of an interrupted growth process for preparing an avalanche photodiode. 15 [035]
Figure 6 includes an illustration of a portion of a wafer having a plurality of avalanche photodiode chips. [036]
Figure 7 includes an illustration of an avalanche photodiode chip. [037]
Figure 8 includes a view of an intermediate avalanche photodiode during manufacture having an oxide layer. 20 [038]
Figure 9 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa. [039]
Figure 10 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa, with the passivation layer having etched openings for anode and cathode contact areas. 25 [040]
Figure 11 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa, with the passivation layer having anode and cathode contacts therein. [041]
Figure 12 includes a compositional and doping diagram of an embodiment of an avalanche photodiode. 30 [042]
Figure 13 includes an E -field diagram of an embodiment of an avalanche photodiode. -8-
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs[[.]] an N absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N absorption layer; and a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the N absorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer.
The avalanche photodiode of claim 1 [[2]], wherein the N-type layer extends across the N absorption layer.
The avalanche photodiode of claim 1 [[5]], wherein the lower conductivity layer having a conductivity reducing implant compared to conductivity of the N-type layer.
The avalanche photodiode of claim 1 [[2]], comprising a window layer above the N-type layer, and an anode contact above the window layer.
The avalanche photodiode of claim 1 [[5]], comprising a window layer above the N-type layer and above the N absorption layer, the window layer including the lower conductivity layer, and an anode contact above the window layer.
The avalanche photodiode of claim 1, An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs; a P absorption layer extending across the avalanche region; [[and]] an P-type layer below at least a center portion of the P absorption layer; and a lower conductivity region laterally from the P-type layer to a surface of the avalanche region and below a perimeter portion of the P absorption layer, the lower conductivity region having lower conductivity compared to the P-type layer.
canceled
canceled
Page 4 of 7 Application No. 14/488,038 Attorney Docket Number F1002.12475US 02 Responsive to Office Action dated canceled
An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs; an N absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N absorption layer; and an N + ba rr ier layer below the N absorption layer, an N + conduction layer below the N + barr ier layer, a substrate below the N + conduction layer, and a cathode contact coupled with the N+ conduction layer. Page 5 of 7
Layer stacks claimed or described, ordered top of device to substrate.
N-type avalanche photodiode (mesa structure)
Materials described outside the worked examples.
GaAs
P-type window layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 12–25 V | — |
Thickness | 0.5–1.5 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,318,639Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 includes an illustration of a transceiver. [028] Figure l A includes an illustration of a receiver having an array of photodiodes. -7- [029]
Figure 2 includes an illustration of an embodiment of an avalanche photodiode with an N-type active region formed by an interrupted growth process. [030]
Figure 3 includes an illustration of an embodiment of an avalanche photodiode with an N-type active region having selective implantation to reduce conductivity in the 5 implanted areas. [031]
Figure 3A includes an illustration of an embodiment of an avalanche photodiode with an N-type active region having an N-type GaAs layer extending across the photodiode between slopes of a mesa. [032]
Figure 4 includes an illustration of an embodiment of an avalanche photodiode 10 with a P-type active region. [033]
Figure 4A includes an illustration of another embodiment of an avalanche photodiode with a P-type active region. [034]
Figure 5 includes an illustration of an interrupted growth process for preparing an avalanche photodiode. 15 [035]
Figure 6 includes an illustration of a portion of a wafer having a plurality of avalanche photodiode chips. [036]
Figure 7 includes an illustration of an avalanche photodiode chip. [037]
Figure 8 includes a view of an intermediate avalanche photodiode during manufacture having an oxide layer. 20 [038]
Figure 9 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa. [039]
Figure 10 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa, with the passivation layer having etched openings for anode and cathode contact areas. 25 [040]
Figure 11 includes a view of an intermediate avalanche photodiode during manufacture having a passivation layer on the mesa, with the passivation layer having anode and cathode contacts therein. [041]
Figure 12 includes a compositional and doping diagram of an embodiment of an avalanche photodiode. 30 [042]
Figure 13 includes an E -field diagram of an embodiment of an avalanche photodiode. -8-
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs[[.]] an N absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N absorption layer; and a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the N absorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer.
The avalanche photodiode of claim 1 [[2]], wherein the N-type layer extends across the N absorption layer.
The avalanche photodiode of claim 1 [[5]], wherein the lower conductivity layer having a conductivity reducing implant compared to conductivity of the N-type layer.
The avalanche photodiode of claim 1 [[2]], comprising a window layer above the N-type layer, and an anode contact above the window layer.
The avalanche photodiode of claim 1 [[5]], comprising a window layer above the N-type layer and above the N absorption layer, the window layer including the lower conductivity layer, and an anode contact above the window layer.
The avalanche photodiode of claim 1, An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs; a P absorption layer extending across the avalanche region; [[and]] an P-type layer below at least a center portion of the P absorption layer; and a lower conductivity region laterally from the P-type layer to a surface of the avalanche region and below a perimeter portion of the P absorption layer, the lower conductivity region having lower conductivity compared to the P-type layer.
canceled
canceled
Page 4 of 7 Application No. 14/488,038 Attorney Docket Number F1002.12475US 02 Responsive to Office Action dated canceled
An avalanche photodiode comprising: an avalanche region having one or more layers prepared from GaAs; an N absorption layer extending across the avalanche region; an N-type layer above at least a center portion of the N absorption layer; and an N + ba rr ier layer below the N absorption layer, an N + conduction layer below the N + barr ier layer, a substrate below the N + conduction layer, and a cathode contact coupled with the N+ conduction layer. Page 5 of 7
Layer stacks claimed or described, ordered top of device to substrate.
N-type avalanche photodiode (mesa structure)
Materials described outside the worked examples.
GaAs
P-type window layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 12–25 V | — |
Thickness | 0.5–1.5 µm |
Related documents with shared materials, methods, properties, or citations.
P-type avalanche photodiode (mesa structure)
| — |
Thickness | 0.7–1.2 µm | — |
Thickness | 36–116 µm | — |
Thickness | 46–96 µm | — |
Thickness | 56–76 µm | — |
Thickness | 0.6–1.4 µm | — |
Thickness | 30–110 µm | — |
Thickness | 40–90 µm | — |
Thickness | 50–70 µm | — |
Thickness | 20–100 µm | — |
Thickness | 30–80 µm | — |
Thickness | 40–60 µm | — |
Thickness | 0.2–0.4 µm | — |
Thickness | 0.3–0.38 µm | — |
Thickness | 0.35–0.36 µm | — |
Thickness | 7–9 µm | — |
Thickness | 7.5–8.5 µm | — |
Thickness | 7.9–8.1 µm | — |
Thickness | 0.25–0.5 µm | — |
Thickness | 0.3–0.4 µm | — |
Thickness | 0.32–0.35 µm | — |
Thickness | 40–120 µm | — |
Thickness | 50–100 µm | — |
Thickness | 60–80 µm | — |
Thickness | 0.85–1.15 µm | — |
Thickness | 0.95–1.05 µm | — |
Thickness | 1.8–2.2 µm | — |
Thickness | 1.9–2.1 µm | — |
Thickness | 1.95–2.05 µm | — |
Thickness | 200–250 µm | — |
Thickness | 210–240 µm | — |
Thickness | 212–215 µm | — |
Thickness | 0.2–0.6 µm | — |
Thickness | 0.3–0.33 µm | — |
GE NANO WIRE TRANSISTOR WITH GAAS AS THE SACRIFICIAL LAYER
P-type avalanche photodiode (mesa structure)
| — |
Thickness | 0.7–1.2 µm | — |
Thickness | 36–116 µm | — |
Thickness | 46–96 µm | — |
Thickness | 56–76 µm | — |
Thickness | 0.6–1.4 µm | — |
Thickness | 30–110 µm | — |
Thickness | 40–90 µm | — |
Thickness | 50–70 µm | — |
Thickness | 20–100 µm | — |
Thickness | 30–80 µm | — |
Thickness | 40–60 µm | — |
Thickness | 0.2–0.4 µm | — |
Thickness | 0.3–0.38 µm | — |
Thickness | 0.35–0.36 µm | — |
Thickness | 7–9 µm | — |
Thickness | 7.5–8.5 µm | — |
Thickness | 7.9–8.1 µm | — |
Thickness | 0.25–0.5 µm | — |
Thickness | 0.3–0.4 µm | — |
Thickness | 0.32–0.35 µm | — |
Thickness | 40–120 µm | — |
Thickness | 50–100 µm | — |
Thickness | 60–80 µm | — |
Thickness | 0.85–1.15 µm | — |
Thickness | 0.95–1.05 µm | — |
Thickness | 1.8–2.2 µm | — |
Thickness | 1.9–2.1 µm | — |
Thickness | 1.95–2.05 µm | — |
Thickness | 200–250 µm | — |
Thickness | 210–240 µm | — |
Thickness | 212–215 µm | — |
Thickness | 0.2–0.6 µm | — |
Thickness | 0.3–0.33 µm | — |
GE NANO WIRE TRANSISTOR WITH GAAS AS THE SACRIFICIAL LAYER
P-type avalanche photodiode (mesa structure)
| — |
Thickness | 0.7–1.2 µm | — |
Thickness | 36–116 µm | — |
Thickness | 46–96 µm | — |
Thickness | 56–76 µm | — |
Thickness | 0.6–1.4 µm | — |
Thickness | 30–110 µm | — |
Thickness | 40–90 µm | — |
Thickness | 50–70 µm | — |
Thickness | 20–100 µm | — |
Thickness | 30–80 µm | — |
Thickness | 40–60 µm | — |
Thickness | 0.2–0.4 µm | — |
Thickness | 0.3–0.38 µm | — |
Thickness | 0.35–0.36 µm | — |
Thickness | 7–9 µm | — |
Thickness | 7.5–8.5 µm | — |
Thickness | 7.9–8.1 µm | — |
Thickness | 0.25–0.5 µm | — |
Thickness | 0.3–0.4 µm | — |
Thickness | 0.32–0.35 µm | — |
Thickness | 40–120 µm | — |
Thickness | 50–100 µm | — |
Thickness | 60–80 µm | — |
Thickness | 0.85–1.15 µm | — |
Thickness | 0.95–1.05 µm | — |
Thickness | 1.8–2.2 µm | — |
Thickness | 1.9–2.1 µm | — |
Thickness | 1.95–2.05 µm | — |
Thickness | 200–250 µm | — |
Thickness | 210–240 µm | — |
Thickness | 212–215 µm | — |
Thickness | 0.2–0.6 µm | — |
Thickness | 0.3–0.33 µm | — |
GE NANO WIRE TRANSISTOR WITH GAAS AS THE SACRIFICIAL LAYER
P-type avalanche photodiode (mesa structure)
| — |
Thickness | 0.7–1.2 µm | — |
Thickness | 36–116 µm | — |
Thickness | 46–96 µm | — |
Thickness | 56–76 µm | — |
Thickness | 0.6–1.4 µm | — |
Thickness | 30–110 µm | — |
Thickness | 40–90 µm | — |
Thickness | 50–70 µm | — |
Thickness | 20–100 µm | — |
Thickness | 30–80 µm | — |
Thickness | 40–60 µm | — |
Thickness | 0.2–0.4 µm | — |
Thickness | 0.3–0.38 µm | — |
Thickness | 0.35–0.36 µm | — |
Thickness | 7–9 µm | — |
Thickness | 7.5–8.5 µm | — |
Thickness | 7.9–8.1 µm | — |
Thickness | 0.25–0.5 µm | — |
Thickness | 0.3–0.4 µm | — |
Thickness | 0.32–0.35 µm | — |
Thickness | 40–120 µm | — |
Thickness | 50–100 µm | — |
Thickness | 60–80 µm | — |
Thickness | 0.85–1.15 µm | — |
Thickness | 0.95–1.05 µm | — |
Thickness | 1.8–2.2 µm | — |
Thickness | 1.9–2.1 µm | — |
Thickness | 1.95–2.05 µm | — |
Thickness | 200–250 µm | — |
Thickness | 210–240 µm | — |
Thickness | 212–215 µm | — |
Thickness | 0.2–0.6 µm | — |
Thickness | 0.3–0.33 µm | — |
GE NANO WIRE TRANSISTOR WITH GAAS AS THE SACRIFICIAL LAYER