Few-electron spin qubits in optically active GaAs quantum dots | Matter42 Literature
Paper
Atlas literature
Research paper
Experimental CharacterizationOther Computational
Few-electron spin qubits in optically active GaAs quantum dots
Peter Millington-Hotze, Petr Klenovsky, Harry E. Dyte, George Gillard et al.
arXiv preprint·2025·arXiv:2504.19257
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Low-strain epitaxial GaAs/AlGaAs quantum-dot diode structure formed by in-situ etching of nanoholes in AlGaAs and infilling with GaAs; used for optical and nuclear-spin spectroscopy.
1 preparation2 characterizations1 figure
ExperimentalGaAsStudied MaterialAlxGa₁-xAsSubstrate / DielectricAlxGa₁-xAs:SiReference MaterialAlxGa₁-xAs:CReference Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Few-electron spin qubits in optically active GaAs quantum dots
Peter Millington-Hotze, Petr Klenovsky, Harry E. Dyte, George Gillard et al.
arXiv preprint·2025·arXiv:2504.19257
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Low-strain epitaxial GaAs/AlGaAs quantum-dot diode structure formed by in-situ etching of nanoholes in AlGaAs and infilling with GaAs; used for optical and nuclear-spin spectroscopy.
1 preparation2 characterizations1 figure
ExperimentalGaAsStudied MaterialAlxGa₁-xAsSubstrate / DielectricAlxGa₁-xAs:SiReference MaterialAlxGa₁-xAs:CReference Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Few-electron spin qubits in optically active GaAs quantum dots
Peter Millington-Hotze, Petr Klenovsky, Harry E. Dyte, George Gillard et al.
arXiv preprint·2025·arXiv:2504.19257
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Low-strain epitaxial GaAs/AlGaAs quantum-dot diode structure formed by in-situ etching of nanoholes in AlGaAs and infilling with GaAs; used for optical and nuclear-spin spectroscopy.
1 preparation2 characterizations1 figure
ExperimentalGaAsStudied MaterialAlxGa₁-xAsSubstrate / DielectricAlxGa₁-xAs:SiReference MaterialAlxGa₁-xAs:CReference Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Few-electron spin qubits in optically active GaAs quantum dots
Peter Millington-Hotze, Petr Klenovsky, Harry E. Dyte, George Gillard et al.
arXiv preprint·2025·arXiv:2504.19257
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Low-strain epitaxial GaAs/AlGaAs quantum-dot diode structure formed by in-situ etching of nanoholes in AlGaAs and infilling with GaAs; used for optical and nuclear-spin spectroscopy.
1 preparation2 characterizations1 figure
ExperimentalGaAsStudied MaterialAlxGa₁-xAsSubstrate / DielectricAlxGa₁-xAs:SiReference MaterialAlxGa₁-xAs:CReference Material
Why these are connected
Related documents with shared materials, methods, properties, or citations.