Patent
US 10,273,574Method for Continuous Production of High Quality Graphene
Avetik HARUTYUNYAN
US
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Patent
Atlas literature
Patent
US 10,273,574Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A continuous method for preparing a film comprising graphene, comprising: providing a metal substrate; continuously advancing the metal substrate into and through a processing chamber comprising one or more heating elements and one or more gas supply components, the one or more heating elements comprising at least a first heating element; heating the metal substrate with the first heating element to form a molten metal layer on a top surface of the metal substrate, wherein the first heating element provides heat to the metal substrate corresponding to a metal substrate temperature that is equal to or above the melting point of the metal substrate; contacting the molten metal layer with a carbon source gas to form a graphene- comprising layer substantially covering the molten metal layer of the top surface of the metal substrate; solidifying the molten metal layer; advancing the metal substrate having the graphene-comprising layer out of the processing chamber; and separating the graphene-comprising layer to form a film comprising graphene. Previously presented
The method of claim 1, wherein the metal substrate comprises a metal foil or a metal film. Original
The method of claim 1, wherein the processing chamber comprises: a preheating zone comprising the one or more heating elements, a processing zone comprising the one or more gas supply components, and a cooling zone, wherein the molten metal layer is formed as the metal substrate advances through the preheating zone, the molten metal layer is contacted with the carbon source gas in the processing zone, and the molten metal layer is solidified in the cooling zone. Original
The method of claim 1, wherein the metal substrate is advanced from an unwinding roll into the processing chamber. Original
The method of claim 1, wherein the metal substrate having the graphene-comprising layer is wound onto a winding roll after it has been advanced out of the processing chamber. Original
The method of claim 1, wherein the one or more heating elements comprises at least two heating elements and the one or more gas supply components comprises at least two gas supply components. Original
The method of claim 1, wherein the metal substrate comprises copper. Original
The method of claim 1, wherein carbon source gas comprises methane, ethylene, acetylene, ethanol, benzene, methanol, carbon-based polymer, nano- carbon material, or a mixture thereof. Original
The method of claim 1, wherein the molten metal layer has a thickness such that the solutal Marangoni number (M g) is lower than the critical number (Mc = 80). Original
Canceled
A continuous method for preparing a film comprising graphene, the continuous method comprising: providing a metal substrate; continuously advancing the metal substrate into and through a processing chamber having a preheating zone comprising one or more heating elements, a processing zone comprising one or more gas supply components, and a cooling zone; heating the metal substrate with the one or more heating elements of the preheating zone to form a molten metal layer on a top surface of the metal substrate, wherein the one or more heating elements of the preheating zone provides heat to the metal substrate, and wherein the metal substrate is heated to a temperature that is equal to or above the melting point of the metal substrate; contacting the molten metal layer with a carbon source gas in the processing zone to form a graphene-comprising layer substantially covering the molten metal layer of the top surface of the metal substrate; solidifying the molten metal layer in the cooling zone; advancing the metal substrate having the graphene-comprising layer out of the processing chamber; and separating the graphene-comprising layer to form a film comprising graphene. New
Materials described outside the worked examples.
metal substrate
molten metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal foil thickness | 20–30 | metal foil |
metal foil thickness (preferred range) | 1–100 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,273,574Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A continuous method for preparing a film comprising graphene, comprising: providing a metal substrate; continuously advancing the metal substrate into and through a processing chamber comprising one or more heating elements and one or more gas supply components, the one or more heating elements comprising at least a first heating element; heating the metal substrate with the first heating element to form a molten metal layer on a top surface of the metal substrate, wherein the first heating element provides heat to the metal substrate corresponding to a metal substrate temperature that is equal to or above the melting point of the metal substrate; contacting the molten metal layer with a carbon source gas to form a graphene- comprising layer substantially covering the molten metal layer of the top surface of the metal substrate; solidifying the molten metal layer; advancing the metal substrate having the graphene-comprising layer out of the processing chamber; and separating the graphene-comprising layer to form a film comprising graphene. Previously presented
The method of claim 1, wherein the metal substrate comprises a metal foil or a metal film. Original
The method of claim 1, wherein the processing chamber comprises: a preheating zone comprising the one or more heating elements, a processing zone comprising the one or more gas supply components, and a cooling zone, wherein the molten metal layer is formed as the metal substrate advances through the preheating zone, the molten metal layer is contacted with the carbon source gas in the processing zone, and the molten metal layer is solidified in the cooling zone. Original
The method of claim 1, wherein the metal substrate is advanced from an unwinding roll into the processing chamber. Original
The method of claim 1, wherein the metal substrate having the graphene-comprising layer is wound onto a winding roll after it has been advanced out of the processing chamber. Original
The method of claim 1, wherein the one or more heating elements comprises at least two heating elements and the one or more gas supply components comprises at least two gas supply components. Original
The method of claim 1, wherein the metal substrate comprises copper. Original
The method of claim 1, wherein carbon source gas comprises methane, ethylene, acetylene, ethanol, benzene, methanol, carbon-based polymer, nano- carbon material, or a mixture thereof. Original
The method of claim 1, wherein the molten metal layer has a thickness such that the solutal Marangoni number (M g) is lower than the critical number (Mc = 80). Original
Canceled
A continuous method for preparing a film comprising graphene, the continuous method comprising: providing a metal substrate; continuously advancing the metal substrate into and through a processing chamber having a preheating zone comprising one or more heating elements, a processing zone comprising one or more gas supply components, and a cooling zone; heating the metal substrate with the one or more heating elements of the preheating zone to form a molten metal layer on a top surface of the metal substrate, wherein the one or more heating elements of the preheating zone provides heat to the metal substrate, and wherein the metal substrate is heated to a temperature that is equal to or above the melting point of the metal substrate; contacting the molten metal layer with a carbon source gas in the processing zone to form a graphene-comprising layer substantially covering the molten metal layer of the top surface of the metal substrate; solidifying the molten metal layer in the cooling zone; advancing the metal substrate having the graphene-comprising layer out of the processing chamber; and separating the graphene-comprising layer to form a film comprising graphene. New
Materials described outside the worked examples.
metal substrate
molten metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal foil thickness | 20–30 | metal foil |
metal foil thickness (preferred range) | 1–100 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,273,574Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A continuous method for preparing a film comprising graphene, comprising: providing a metal substrate; continuously advancing the metal substrate into and through a processing chamber comprising one or more heating elements and one or more gas supply components, the one or more heating elements comprising at least a first heating element; heating the metal substrate with the first heating element to form a molten metal layer on a top surface of the metal substrate, wherein the first heating element provides heat to the metal substrate corresponding to a metal substrate temperature that is equal to or above the melting point of the metal substrate; contacting the molten metal layer with a carbon source gas to form a graphene- comprising layer substantially covering the molten metal layer of the top surface of the metal substrate; solidifying the molten metal layer; advancing the metal substrate having the graphene-comprising layer out of the processing chamber; and separating the graphene-comprising layer to form a film comprising graphene. Previously presented
The method of claim 1, wherein the metal substrate comprises a metal foil or a metal film. Original
The method of claim 1, wherein the processing chamber comprises: a preheating zone comprising the one or more heating elements, a processing zone comprising the one or more gas supply components, and a cooling zone, wherein the molten metal layer is formed as the metal substrate advances through the preheating zone, the molten metal layer is contacted with the carbon source gas in the processing zone, and the molten metal layer is solidified in the cooling zone. Original
The method of claim 1, wherein the metal substrate is advanced from an unwinding roll into the processing chamber. Original
The method of claim 1, wherein the metal substrate having the graphene-comprising layer is wound onto a winding roll after it has been advanced out of the processing chamber. Original
The method of claim 1, wherein the one or more heating elements comprises at least two heating elements and the one or more gas supply components comprises at least two gas supply components. Original
The method of claim 1, wherein the metal substrate comprises copper. Original
The method of claim 1, wherein carbon source gas comprises methane, ethylene, acetylene, ethanol, benzene, methanol, carbon-based polymer, nano- carbon material, or a mixture thereof. Original
The method of claim 1, wherein the molten metal layer has a thickness such that the solutal Marangoni number (M g) is lower than the critical number (Mc = 80). Original
Canceled
A continuous method for preparing a film comprising graphene, the continuous method comprising: providing a metal substrate; continuously advancing the metal substrate into and through a processing chamber having a preheating zone comprising one or more heating elements, a processing zone comprising one or more gas supply components, and a cooling zone; heating the metal substrate with the one or more heating elements of the preheating zone to form a molten metal layer on a top surface of the metal substrate, wherein the one or more heating elements of the preheating zone provides heat to the metal substrate, and wherein the metal substrate is heated to a temperature that is equal to or above the melting point of the metal substrate; contacting the molten metal layer with a carbon source gas in the processing zone to form a graphene-comprising layer substantially covering the molten metal layer of the top surface of the metal substrate; solidifying the molten metal layer in the cooling zone; advancing the metal substrate having the graphene-comprising layer out of the processing chamber; and separating the graphene-comprising layer to form a film comprising graphene. New
Materials described outside the worked examples.
metal substrate
molten metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal foil thickness | 20–30 | metal foil |
metal foil thickness (preferred range) | 1–100 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,273,574Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A continuous method for preparing a film comprising graphene, comprising: providing a metal substrate; continuously advancing the metal substrate into and through a processing chamber comprising one or more heating elements and one or more gas supply components, the one or more heating elements comprising at least a first heating element; heating the metal substrate with the first heating element to form a molten metal layer on a top surface of the metal substrate, wherein the first heating element provides heat to the metal substrate corresponding to a metal substrate temperature that is equal to or above the melting point of the metal substrate; contacting the molten metal layer with a carbon source gas to form a graphene- comprising layer substantially covering the molten metal layer of the top surface of the metal substrate; solidifying the molten metal layer; advancing the metal substrate having the graphene-comprising layer out of the processing chamber; and separating the graphene-comprising layer to form a film comprising graphene. Previously presented
The method of claim 1, wherein the metal substrate comprises a metal foil or a metal film. Original
The method of claim 1, wherein the processing chamber comprises: a preheating zone comprising the one or more heating elements, a processing zone comprising the one or more gas supply components, and a cooling zone, wherein the molten metal layer is formed as the metal substrate advances through the preheating zone, the molten metal layer is contacted with the carbon source gas in the processing zone, and the molten metal layer is solidified in the cooling zone. Original
The method of claim 1, wherein the metal substrate is advanced from an unwinding roll into the processing chamber. Original
The method of claim 1, wherein the metal substrate having the graphene-comprising layer is wound onto a winding roll after it has been advanced out of the processing chamber. Original
The method of claim 1, wherein the one or more heating elements comprises at least two heating elements and the one or more gas supply components comprises at least two gas supply components. Original
The method of claim 1, wherein the metal substrate comprises copper. Original
The method of claim 1, wherein carbon source gas comprises methane, ethylene, acetylene, ethanol, benzene, methanol, carbon-based polymer, nano- carbon material, or a mixture thereof. Original
The method of claim 1, wherein the molten metal layer has a thickness such that the solutal Marangoni number (M g) is lower than the critical number (Mc = 80). Original
Canceled
A continuous method for preparing a film comprising graphene, the continuous method comprising: providing a metal substrate; continuously advancing the metal substrate into and through a processing chamber having a preheating zone comprising one or more heating elements, a processing zone comprising one or more gas supply components, and a cooling zone; heating the metal substrate with the one or more heating elements of the preheating zone to form a molten metal layer on a top surface of the metal substrate, wherein the one or more heating elements of the preheating zone provides heat to the metal substrate, and wherein the metal substrate is heated to a temperature that is equal to or above the melting point of the metal substrate; contacting the molten metal layer with a carbon source gas in the processing zone to form a graphene-comprising layer substantially covering the molten metal layer of the top surface of the metal substrate; solidifying the molten metal layer in the cooling zone; advancing the metal substrate having the graphene-comprising layer out of the processing chamber; and separating the graphene-comprising layer to form a film comprising graphene. New
Materials described outside the worked examples.
metal substrate
molten metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
metal foil thickness | 20–30 | metal foil |
metal foil thickness (preferred range) | 1–100 |
Related documents with shared materials, methods, properties, or citations.
graphene
copper
Cu
carbon source gas
metal foil
metal film
nickel
Ni
ruthenium
Ru
rhodium
Rh
aluminum
Al
Si/SiO₂ second substrate
inert gas atmosphere
metal film thickness | 100–1000 | metal film |
metal film thickness (most preferred) | 300–500 | metal film |
molten metal layer thickness (claimed) | 200–800 | molten metal layer |
top surface heating temperature (claimed) | 1020–1080 | metal substrate |
bottom surface heating temperature upper limit (claimed) | ≤ 1050 | metal substrate |
Thickness | 100–1000 nm | — |
Thickness | 100–800 nm | — |
Thickness | 200–600 nm | — |
Thickness | 300–500 nm | — |
Thickness | 200–800 nm | — |
Thickness | 300–700 nm | — |
Thickness | 450–550 nm | — |
Pressure | 1e-8 atm | — |
Temperature | ≤ 10 °C | — |
Temperature | ≥ 10 °C | — |
Temperature | ≤ 1e+50 °C | — |
graphene
copper
Cu
carbon source gas
metal foil
metal film
nickel
Ni
ruthenium
Ru
rhodium
Rh
aluminum
Al
Si/SiO₂ second substrate
inert gas atmosphere
metal film thickness | 100–1000 | metal film |
metal film thickness (most preferred) | 300–500 | metal film |
molten metal layer thickness (claimed) | 200–800 | molten metal layer |
top surface heating temperature (claimed) | 1020–1080 | metal substrate |
bottom surface heating temperature upper limit (claimed) | ≤ 1050 | metal substrate |
Thickness | 100–1000 nm | — |
Thickness | 100–800 nm | — |
Thickness | 200–600 nm | — |
Thickness | 300–500 nm | — |
Thickness | 200–800 nm | — |
Thickness | 300–700 nm | — |
Thickness | 450–550 nm | — |
Pressure | 1e-8 atm | — |
Temperature | ≤ 10 °C | — |
Temperature | ≥ 10 °C | — |
Temperature | ≤ 1e+50 °C | — |
graphene
copper
Cu
carbon source gas
metal foil
metal film
nickel
Ni
ruthenium
Ru
rhodium
Rh
aluminum
Al
Si/SiO₂ second substrate
inert gas atmosphere
metal film thickness | 100–1000 | metal film |
metal film thickness (most preferred) | 300–500 | metal film |
molten metal layer thickness (claimed) | 200–800 | molten metal layer |
top surface heating temperature (claimed) | 1020–1080 | metal substrate |
bottom surface heating temperature upper limit (claimed) | ≤ 1050 | metal substrate |
Thickness | 100–1000 nm | — |
Thickness | 100–800 nm | — |
Thickness | 200–600 nm | — |
Thickness | 300–500 nm | — |
Thickness | 200–800 nm | — |
Thickness | 300–700 nm | — |
Thickness | 450–550 nm | — |
Pressure | 1e-8 atm | — |
Temperature | ≤ 10 °C | — |
Temperature | ≥ 10 °C | — |
Temperature | ≤ 1e+50 °C | — |
graphene
copper
Cu
carbon source gas
metal foil
metal film
nickel
Ni
ruthenium
Ru
rhodium
Rh
aluminum
Al
Si/SiO₂ second substrate
inert gas atmosphere
metal film thickness | 100–1000 | metal film |
metal film thickness (most preferred) | 300–500 | metal film |
molten metal layer thickness (claimed) | 200–800 | molten metal layer |
top surface heating temperature (claimed) | 1020–1080 | metal substrate |
bottom surface heating temperature upper limit (claimed) | ≤ 1050 | metal substrate |
Thickness | 100–1000 nm | — |
Thickness | 100–800 nm | — |
Thickness | 200–600 nm | — |
Thickness | 300–500 nm | — |
Thickness | 200–800 nm | — |
Thickness | 300–700 nm | — |
Thickness | 450–550 nm | — |
Pressure | 1e-8 atm | — |
Temperature | ≤ 10 °C | — |
Temperature | ≥ 10 °C | — |
Temperature | ≤ 1e+50 °C | — |