Patent
US 9,322,096Title: COPPER SUBSTRATE FOR DEPOSITION OF GRAPHENE 100 102
YAGER, Thomas A., ROBINSON, Joshua
28 November 2013·US
Copyright © 2026 Matter42. All rights reserved.
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US 9,322,096Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 N 0 Description AMENDMENTS TO THE SPECIFICATION The following will replace all prior versions of the listed paragraphs in the Specification of the …
FIG. 2 shows a dia g ram 200 of a number of defects that may be visually characterized as dark spots (202), light spots (204), multilayer graphene (206 & 208), …
FIG. 3. Unfortunately 99. 999 % pure copper may cost considerably more than 99.8% copper, between ten to one hundred times more at current prices. Moreover, …
FIG. 4A is a conceptual illustration of operations in growing graphene on high purity copper as described herein. In a diagram 400A, a [[A]] sample of …
FIG. 5 is a flow diagram showing example operations that may be used for carrying out the described method of growing graphene on high purity copper;
FIG. 6 is a block diagram of an automated machine that may be used for carrying out the described method of growing graphene on high purity copper;
FIG. 7. For example, referring to manufacturing controller 690, one or more of the tasks shown in
FIG. 8 illustrates a block diagram of an example computer program product that may be used to control the automated machine of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Curren t ly Amen d ed) A method ot mnulhc n r m ng to mangfhctnre graphene, comprising: provid. ing a copper substrate that includes a fi rst co pper la y er in contact wit h a s econd copper layer, the fi rst copper layer thermall y annealed to the seco n d copper la y er at a the rma l an nea ling te mperature within o ne of: a vacuum and one or more noble gases, the fi rst copper layer characteri z ed b y a first defect areal densit y and a f irst copper percen ta ge by w e ight and the second copper layer characterized by a- second defc c 4 areal density and a second copper percen tag e by w eig ht, wherein the second copper percentage by weight is greater than the fi rst copper percentage by weight 7 wtein4e-rir-t-defe -- aaeal-:tsi-ig; ea4erha-the-secon-defect-a ed density, and wh o rei n 4h e- f r ht deket-aeal-desy-i -e l a de s- ab mt 4-8#fdefee4 -p Fs q ua re centiOeraf he first co pp er la y er-and the secoad-delct areal densit y in e- -des ab m t li X eikts p er s q uare ce o & + meter of the seond c app er 1a y er; and grow ing a gra phene mono laye r via chemical va por deposition on the second copper layer. wherein a defect areal density of the ~raphene monolayer grown on the second copper layer includes about 1000 defects per square centimeter of the graphene monolayer.
(Original) The method of claim 1, wherein pro v idi ng th e copper substrate incl udes: pro vidin g the first copper layer: clea nin a surface of the first copper la yer: depositing th e second copper layer on the clea n ed surface of the first copper la y er to form th e copper substrate; and thermally annealing the copper subs trate.
S/N 13/8 07,533
(Withdrawni) The g raphene-copper composite of claim 2 0, wherein t h e first avera age thickness is at least about 3 mi cromete r s and th e second averag e thickness is on e ato mic mon olayer of copper to about 2 5 microm eters. withdrawn
(Withdraw n --- Previously Presented) The s ys tem of claim 2 5, wherei n the first copper lay er is characterized by a first ox yg en percenta ge by weight, the microprocessor be ine further programmable to employ the copper deposition source to deposit the second coppe r lay er at a second oxy gen p ercentage by weight that is about the same or less than the firs t ox y g en percenta ge by weight. withdrawn
(O riginal) The method of claim., wherein in a di rmensi on perpendicular to the g rap hene m onolayer, the first copper layer is characterized by a first average thickness; the second copper layer is characterize d by a second average thick ness; and the second average thickness is less than the first average thickness.
The met hod of cl aim 3, wherein. the fir st ave rage thickness is at l east about 3 micrometers and the second avera g e thickness is one atomic mo n ola y er of co pper to a bout micrometers. 5. (Cancelled) canceled
9, (Ori g inal) The meth od of clai m 8, wherein the surface of the f irst copper layer is cleaned by one or more of sputter c lean i ng, acid etching, solve t rinsing, el e ctr o polis hing, or chemical m echa rn ica l p olishing,
19, (Ca n celled) canceled
20. (Wit h drawn-Previously Presented) A grap hen e-cop per composite, comprising: a f irst copper layer characterized by. a fi rst copper percentage by wei g ht, a firs t defect area l de n sity, a first oxygen percentage by weight, and a first avera g e thick u ess: 4 S/N 13/817, 533 a second copper la yer having a first surface in contact wi th the fi r st copper layer, the sec o nd copper layer characterized by: a second copper percentage by weight, a second defect areal density, a second oxygen percentage by weight, and a second avera g e thickness, wherein t h e first copper layer is the rm ally annealed io the second copper lay er at a thermal annealing temperature with i n on e of: a vacuum and o ne or m ore noble ga ses: and a gra ph ene m onola y er in contact with a second surf a ce of th e second copper la y er, wherein: the second copper percentag e by weig h t is greater than the fi r st copper percentage by w eight, wherein th e first defect areal density is g reater t h an th e second defect are al de n sity, and wherein the first defect areal density includes about 8000 defects per square centimeter of the first copper layer and the second de fec t ar e al density includes about 1000 d efect s per square centi me ter of th e second copper layer; the second oxygen perce nt age by weig h t is about th e same or less than the first oxygen percenta g e b y weight; and the second a ver age thickness is less than the first average thickness. withdrawn
2 4. (Wit hdrawn-Previously P resented) The grap h ene cop pe r co mp osite of claim 20, wherei n: the second copper percentage b y weight is at least about 99.9 %- the fi rst copper percentage by wei gh t is less than about 99.9%; or the second copper percentage b y weight is at least a b out 99.9% and th e first copper percentage by weight is less than about 99,9%. withdrawn
22, (C ancelle d) S/N 13/817,533 canceled
23. (W ith dra wn-Previously Pr esented) The graphene -copper c omp osite of c laim 20, w herein the second c opper p ercentage by weig ht i s g rea ter t h an the first co pper percentage by weig ht by at least about 0.1%. withdrawn
(W ithdrawn-Previously Presented) A syste m for ma.na fa cturing a. copper substrate for growing gra phene, t he system comprising: a deposition cha m ber; a sample stage configured to hold a copper substrate in t he deposition c hanber: a copper deposition s ou rce; a clea ning a g ent source co nfigu red to direct clea nin agent to the copper substrate held by the sample stage; a sensor configured t o determine a thickness of a layer deposited b y the copper dep osit ion so urce; a heater configured to heat the copper substrate h eld by th e sa m ple stag e to an ann eal ing te m peratur e of abou t 75 0 *C to about 1000;C; a gas source con fi gured to provide a t herm al anneali ng g as to the copper substrate h eld by the sa mple st age; and 6 S/N 13/817, 533 a ri croproces sor coupled to the deposition cha mber, the sa m ple stage, the copper depositi on source, the clea nin agen t source, the sensor, and the h eater, the mic roprocessor programmr able t o: employ t he s ample stage to hold a fi r st copper layer in the deposition chambe r; emplo y the clea ning ag ent s ource to direct c l ean ing agen t to the first copper layer; em plo y the copper depos i tion source and the sensor to deposit a second copper layer on t he fi rst copper layer, wherein the second copper layer is thinner co mpa red to the first copper layer, where in the first copper layer is th erm ally annealed t o the second copper layer at a thermal annealing temperature wi t hin one of: a vac uu m and one or more noble g ases, wherein a first defect areal density o f t he first c opper l a yer is greater than a second defect areal density of the second copper layer, and wherein the first de fe ct area l dens ity includes about 80 00 de f ects per square ce ntim eter of th e first copper layer and the second defect areal density includes about 1000 defects per s qu are centimeter of t h e second copper layer; and emplo y the heater and t he g as source to t herm ally anneal the first c o pper layer at the copper substrate. withdrawn
26, (Withdraw n) The system of claim 25, fu rther com prisi ng a che mi cal vapor source configured to provide one or m ore che m ical vapor d e posit ion prec urs(rsfo r f orming graphene, wherein the microprocessor is program ma ble to employ the c hem ical vapor source 7 S/N 13/817,53 3 to grow a graphene mo nolay e r a t the second co pper l ayer using the o n e or more chemical vapor depos ition prec u rsors for for ming graphene. withdrawn
31. (Wit h dra wn) The system of claim 25, whe rei n the copper depos ition source is configured to deposit copper by one or more of sputtering, evaporation, electroplating, or chemical vapor depositio n (CVD). withdrawn
33. (Withdrawn Previously Presented) The s ystem of claim 25. wh ere in the microprocessor is programm able to employ the heater and the gas source to thermally anneal the first copper la y er in an atmo sphere comprisi ng: about 1 mole %4 hydrog en to about 1 0 Inn e % h ydrogen; and about 9 0 mole % to about 99 mole % of the one or more noble gases. withdrawn
(Wi thdraw n-Previously Pre sented) The system o f clai m 25, wherein in a dimension perpendicular to a grap hene m onola ye r, the first copper la yer is c h arac terize d by a first avera ge thickness, the microprocessor being furth er programmable to employ the copper deposition source and the sensor to deposit the second copper layer at a second average thickness that is less tha n the first avera g e thickness. withdrawn
(Cance l led) canceled
(Withdraw n) The system of clai m 25, wh erei n the clea ning agent source is c onfigu red to provide one or more of sp utt er clean ing, acid etching, solvent rins ing, elec t ropolis hin g, or chemical m echanical p olishing. withdrawn
(C an celled) canceled
- 42. 9 canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-copper composite substrate
automated system for manufacturing copper substrate for graphene growth
No layer stack recorded.
Materials described outside the worked examples.
first copper layer (lower purity)
Cu
graphene monolayer
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
defect areal density of first copper layer | 8000 defects per square centimeter | Cu |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,322,096Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 N 0 Description AMENDMENTS TO THE SPECIFICATION The following will replace all prior versions of the listed paragraphs in the Specification of the …
FIG. 2 shows a dia g ram 200 of a number of defects that may be visually characterized as dark spots (202), light spots (204), multilayer graphene (206 & 208), …
FIG. 3. Unfortunately 99. 999 % pure copper may cost considerably more than 99.8% copper, between ten to one hundred times more at current prices. Moreover, …
FIG. 4A is a conceptual illustration of operations in growing graphene on high purity copper as described herein. In a diagram 400A, a [[A]] sample of …
FIG. 5 is a flow diagram showing example operations that may be used for carrying out the described method of growing graphene on high purity copper;
FIG. 6 is a block diagram of an automated machine that may be used for carrying out the described method of growing graphene on high purity copper;
FIG. 7. For example, referring to manufacturing controller 690, one or more of the tasks shown in
FIG. 8 illustrates a block diagram of an example computer program product that may be used to control the automated machine of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Curren t ly Amen d ed) A method ot mnulhc n r m ng to mangfhctnre graphene, comprising: provid. ing a copper substrate that includes a fi rst co pper la y er in contact wit h a s econd copper layer, the fi rst copper layer thermall y annealed to the seco n d copper la y er at a the rma l an nea ling te mperature within o ne of: a vacuum and one or more noble gases, the fi rst copper layer characteri z ed b y a first defect areal densit y and a f irst copper percen ta ge by w e ight and the second copper layer characterized by a- second defc c 4 areal density and a second copper percen tag e by w eig ht, wherein the second copper percentage by weight is greater than the fi rst copper percentage by weight 7 wtein4e-rir-t-defe -- aaeal-:tsi-ig; ea4erha-the-secon-defect-a ed density, and wh o rei n 4h e- f r ht deket-aeal-desy-i -e l a de s- ab mt 4-8#fdefee4 -p Fs q ua re centiOeraf he first co pp er la y er-and the secoad-delct areal densit y in e- -des ab m t li X eikts p er s q uare ce o & + meter of the seond c app er 1a y er; and grow ing a gra phene mono laye r via chemical va por deposition on the second copper layer. wherein a defect areal density of the ~raphene monolayer grown on the second copper layer includes about 1000 defects per square centimeter of the graphene monolayer.
(Original) The method of claim 1, wherein pro v idi ng th e copper substrate incl udes: pro vidin g the first copper layer: clea nin a surface of the first copper la yer: depositing th e second copper layer on the clea n ed surface of the first copper la y er to form th e copper substrate; and thermally annealing the copper subs trate.
S/N 13/8 07,533
(Withdrawni) The g raphene-copper composite of claim 2 0, wherein t h e first avera age thickness is at least about 3 mi cromete r s and th e second averag e thickness is on e ato mic mon olayer of copper to about 2 5 microm eters. withdrawn
(Withdraw n --- Previously Presented) The s ys tem of claim 2 5, wherei n the first copper lay er is characterized by a first ox yg en percenta ge by weight, the microprocessor be ine further programmable to employ the copper deposition source to deposit the second coppe r lay er at a second oxy gen p ercentage by weight that is about the same or less than the firs t ox y g en percenta ge by weight. withdrawn
(O riginal) The method of claim., wherein in a di rmensi on perpendicular to the g rap hene m onolayer, the first copper layer is characterized by a first average thickness; the second copper layer is characterize d by a second average thick ness; and the second average thickness is less than the first average thickness.
The met hod of cl aim 3, wherein. the fir st ave rage thickness is at l east about 3 micrometers and the second avera g e thickness is one atomic mo n ola y er of co pper to a bout micrometers. 5. (Cancelled) canceled
9, (Ori g inal) The meth od of clai m 8, wherein the surface of the f irst copper layer is cleaned by one or more of sputter c lean i ng, acid etching, solve t rinsing, el e ctr o polis hing, or chemical m echa rn ica l p olishing,
19, (Ca n celled) canceled
20. (Wit h drawn-Previously Presented) A grap hen e-cop per composite, comprising: a f irst copper layer characterized by. a fi rst copper percentage by wei g ht, a firs t defect area l de n sity, a first oxygen percentage by weight, and a first avera g e thick u ess: 4 S/N 13/817, 533 a second copper la yer having a first surface in contact wi th the fi r st copper layer, the sec o nd copper layer characterized by: a second copper percentage by weight, a second defect areal density, a second oxygen percentage by weight, and a second avera g e thickness, wherein t h e first copper layer is the rm ally annealed io the second copper lay er at a thermal annealing temperature with i n on e of: a vacuum and o ne or m ore noble ga ses: and a gra ph ene m onola y er in contact with a second surf a ce of th e second copper la y er, wherein: the second copper percentag e by weig h t is greater than the fi r st copper percentage by w eight, wherein th e first defect areal density is g reater t h an th e second defect are al de n sity, and wherein the first defect areal density includes about 8000 defects per square centimeter of the first copper layer and the second de fec t ar e al density includes about 1000 d efect s per square centi me ter of th e second copper layer; the second oxygen perce nt age by weig h t is about th e same or less than the first oxygen percenta g e b y weight; and the second a ver age thickness is less than the first average thickness. withdrawn
2 4. (Wit hdrawn-Previously P resented) The grap h ene cop pe r co mp osite of claim 20, wherei n: the second copper percentage b y weight is at least about 99.9 %- the fi rst copper percentage by wei gh t is less than about 99.9%; or the second copper percentage b y weight is at least a b out 99.9% and th e first copper percentage by weight is less than about 99,9%. withdrawn
22, (C ancelle d) S/N 13/817,533 canceled
23. (W ith dra wn-Previously Pr esented) The graphene -copper c omp osite of c laim 20, w herein the second c opper p ercentage by weig ht i s g rea ter t h an the first co pper percentage by weig ht by at least about 0.1%. withdrawn
(W ithdrawn-Previously Presented) A syste m for ma.na fa cturing a. copper substrate for growing gra phene, t he system comprising: a deposition cha m ber; a sample stage configured to hold a copper substrate in t he deposition c hanber: a copper deposition s ou rce; a clea ning a g ent source co nfigu red to direct clea nin agent to the copper substrate held by the sample stage; a sensor configured t o determine a thickness of a layer deposited b y the copper dep osit ion so urce; a heater configured to heat the copper substrate h eld by th e sa m ple stag e to an ann eal ing te m peratur e of abou t 75 0 *C to about 1000;C; a gas source con fi gured to provide a t herm al anneali ng g as to the copper substrate h eld by the sa mple st age; and 6 S/N 13/817, 533 a ri croproces sor coupled to the deposition cha mber, the sa m ple stage, the copper depositi on source, the clea nin agen t source, the sensor, and the h eater, the mic roprocessor programmr able t o: employ t he s ample stage to hold a fi r st copper layer in the deposition chambe r; emplo y the clea ning ag ent s ource to direct c l ean ing agen t to the first copper layer; em plo y the copper depos i tion source and the sensor to deposit a second copper layer on t he fi rst copper layer, wherein the second copper layer is thinner co mpa red to the first copper layer, where in the first copper layer is th erm ally annealed t o the second copper layer at a thermal annealing temperature wi t hin one of: a vac uu m and one or more noble g ases, wherein a first defect areal density o f t he first c opper l a yer is greater than a second defect areal density of the second copper layer, and wherein the first de fe ct area l dens ity includes about 80 00 de f ects per square ce ntim eter of th e first copper layer and the second defect areal density includes about 1000 defects per s qu are centimeter of t h e second copper layer; and emplo y the heater and t he g as source to t herm ally anneal the first c o pper layer at the copper substrate. withdrawn
26, (Withdraw n) The system of claim 25, fu rther com prisi ng a che mi cal vapor source configured to provide one or m ore che m ical vapor d e posit ion prec urs(rsfo r f orming graphene, wherein the microprocessor is program ma ble to employ the c hem ical vapor source 7 S/N 13/817,53 3 to grow a graphene mo nolay e r a t the second co pper l ayer using the o n e or more chemical vapor depos ition prec u rsors for for ming graphene. withdrawn
31. (Wit h dra wn) The system of claim 25, whe rei n the copper depos ition source is configured to deposit copper by one or more of sputtering, evaporation, electroplating, or chemical vapor depositio n (CVD). withdrawn
33. (Withdrawn Previously Presented) The s ystem of claim 25. wh ere in the microprocessor is programm able to employ the heater and the gas source to thermally anneal the first copper la y er in an atmo sphere comprisi ng: about 1 mole %4 hydrog en to about 1 0 Inn e % h ydrogen; and about 9 0 mole % to about 99 mole % of the one or more noble gases. withdrawn
(Wi thdraw n-Previously Pre sented) The system o f clai m 25, wherein in a dimension perpendicular to a grap hene m onola ye r, the first copper la yer is c h arac terize d by a first avera ge thickness, the microprocessor being furth er programmable to employ the copper deposition source and the sensor to deposit the second copper layer at a second average thickness that is less tha n the first avera g e thickness. withdrawn
(Cance l led) canceled
(Withdraw n) The system of clai m 25, wh erei n the clea ning agent source is c onfigu red to provide one or more of sp utt er clean ing, acid etching, solvent rins ing, elec t ropolis hin g, or chemical m echanical p olishing. withdrawn
(C an celled) canceled
- 42. 9 canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-copper composite substrate
automated system for manufacturing copper substrate for graphene growth
No layer stack recorded.
Materials described outside the worked examples.
first copper layer (lower purity)
Cu
graphene monolayer
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
defect areal density of first copper layer | 8000 defects per square centimeter | Cu |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,322,096Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 N 0 Description AMENDMENTS TO THE SPECIFICATION The following will replace all prior versions of the listed paragraphs in the Specification of the …
FIG. 2 shows a dia g ram 200 of a number of defects that may be visually characterized as dark spots (202), light spots (204), multilayer graphene (206 & 208), …
FIG. 3. Unfortunately 99. 999 % pure copper may cost considerably more than 99.8% copper, between ten to one hundred times more at current prices. Moreover, …
FIG. 4A is a conceptual illustration of operations in growing graphene on high purity copper as described herein. In a diagram 400A, a [[A]] sample of …
FIG. 5 is a flow diagram showing example operations that may be used for carrying out the described method of growing graphene on high purity copper;
FIG. 6 is a block diagram of an automated machine that may be used for carrying out the described method of growing graphene on high purity copper;
FIG. 7. For example, referring to manufacturing controller 690, one or more of the tasks shown in
FIG. 8 illustrates a block diagram of an example computer program product that may be used to control the automated machine of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Curren t ly Amen d ed) A method ot mnulhc n r m ng to mangfhctnre graphene, comprising: provid. ing a copper substrate that includes a fi rst co pper la y er in contact wit h a s econd copper layer, the fi rst copper layer thermall y annealed to the seco n d copper la y er at a the rma l an nea ling te mperature within o ne of: a vacuum and one or more noble gases, the fi rst copper layer characteri z ed b y a first defect areal densit y and a f irst copper percen ta ge by w e ight and the second copper layer characterized by a- second defc c 4 areal density and a second copper percen tag e by w eig ht, wherein the second copper percentage by weight is greater than the fi rst copper percentage by weight 7 wtein4e-rir-t-defe -- aaeal-:tsi-ig; ea4erha-the-secon-defect-a ed density, and wh o rei n 4h e- f r ht deket-aeal-desy-i -e l a de s- ab mt 4-8#fdefee4 -p Fs q ua re centiOeraf he first co pp er la y er-and the secoad-delct areal densit y in e- -des ab m t li X eikts p er s q uare ce o & + meter of the seond c app er 1a y er; and grow ing a gra phene mono laye r via chemical va por deposition on the second copper layer. wherein a defect areal density of the ~raphene monolayer grown on the second copper layer includes about 1000 defects per square centimeter of the graphene monolayer.
(Original) The method of claim 1, wherein pro v idi ng th e copper substrate incl udes: pro vidin g the first copper layer: clea nin a surface of the first copper la yer: depositing th e second copper layer on the clea n ed surface of the first copper la y er to form th e copper substrate; and thermally annealing the copper subs trate.
S/N 13/8 07,533
(Withdrawni) The g raphene-copper composite of claim 2 0, wherein t h e first avera age thickness is at least about 3 mi cromete r s and th e second averag e thickness is on e ato mic mon olayer of copper to about 2 5 microm eters. withdrawn
(Withdraw n --- Previously Presented) The s ys tem of claim 2 5, wherei n the first copper lay er is characterized by a first ox yg en percenta ge by weight, the microprocessor be ine further programmable to employ the copper deposition source to deposit the second coppe r lay er at a second oxy gen p ercentage by weight that is about the same or less than the firs t ox y g en percenta ge by weight. withdrawn
(O riginal) The method of claim., wherein in a di rmensi on perpendicular to the g rap hene m onolayer, the first copper layer is characterized by a first average thickness; the second copper layer is characterize d by a second average thick ness; and the second average thickness is less than the first average thickness.
The met hod of cl aim 3, wherein. the fir st ave rage thickness is at l east about 3 micrometers and the second avera g e thickness is one atomic mo n ola y er of co pper to a bout micrometers. 5. (Cancelled) canceled
9, (Ori g inal) The meth od of clai m 8, wherein the surface of the f irst copper layer is cleaned by one or more of sputter c lean i ng, acid etching, solve t rinsing, el e ctr o polis hing, or chemical m echa rn ica l p olishing,
19, (Ca n celled) canceled
20. (Wit h drawn-Previously Presented) A grap hen e-cop per composite, comprising: a f irst copper layer characterized by. a fi rst copper percentage by wei g ht, a firs t defect area l de n sity, a first oxygen percentage by weight, and a first avera g e thick u ess: 4 S/N 13/817, 533 a second copper la yer having a first surface in contact wi th the fi r st copper layer, the sec o nd copper layer characterized by: a second copper percentage by weight, a second defect areal density, a second oxygen percentage by weight, and a second avera g e thickness, wherein t h e first copper layer is the rm ally annealed io the second copper lay er at a thermal annealing temperature with i n on e of: a vacuum and o ne or m ore noble ga ses: and a gra ph ene m onola y er in contact with a second surf a ce of th e second copper la y er, wherein: the second copper percentag e by weig h t is greater than the fi r st copper percentage by w eight, wherein th e first defect areal density is g reater t h an th e second defect are al de n sity, and wherein the first defect areal density includes about 8000 defects per square centimeter of the first copper layer and the second de fec t ar e al density includes about 1000 d efect s per square centi me ter of th e second copper layer; the second oxygen perce nt age by weig h t is about th e same or less than the first oxygen percenta g e b y weight; and the second a ver age thickness is less than the first average thickness. withdrawn
2 4. (Wit hdrawn-Previously P resented) The grap h ene cop pe r co mp osite of claim 20, wherei n: the second copper percentage b y weight is at least about 99.9 %- the fi rst copper percentage by wei gh t is less than about 99.9%; or the second copper percentage b y weight is at least a b out 99.9% and th e first copper percentage by weight is less than about 99,9%. withdrawn
22, (C ancelle d) S/N 13/817,533 canceled
23. (W ith dra wn-Previously Pr esented) The graphene -copper c omp osite of c laim 20, w herein the second c opper p ercentage by weig ht i s g rea ter t h an the first co pper percentage by weig ht by at least about 0.1%. withdrawn
(W ithdrawn-Previously Presented) A syste m for ma.na fa cturing a. copper substrate for growing gra phene, t he system comprising: a deposition cha m ber; a sample stage configured to hold a copper substrate in t he deposition c hanber: a copper deposition s ou rce; a clea ning a g ent source co nfigu red to direct clea nin agent to the copper substrate held by the sample stage; a sensor configured t o determine a thickness of a layer deposited b y the copper dep osit ion so urce; a heater configured to heat the copper substrate h eld by th e sa m ple stag e to an ann eal ing te m peratur e of abou t 75 0 *C to about 1000;C; a gas source con fi gured to provide a t herm al anneali ng g as to the copper substrate h eld by the sa mple st age; and 6 S/N 13/817, 533 a ri croproces sor coupled to the deposition cha mber, the sa m ple stage, the copper depositi on source, the clea nin agen t source, the sensor, and the h eater, the mic roprocessor programmr able t o: employ t he s ample stage to hold a fi r st copper layer in the deposition chambe r; emplo y the clea ning ag ent s ource to direct c l ean ing agen t to the first copper layer; em plo y the copper depos i tion source and the sensor to deposit a second copper layer on t he fi rst copper layer, wherein the second copper layer is thinner co mpa red to the first copper layer, where in the first copper layer is th erm ally annealed t o the second copper layer at a thermal annealing temperature wi t hin one of: a vac uu m and one or more noble g ases, wherein a first defect areal density o f t he first c opper l a yer is greater than a second defect areal density of the second copper layer, and wherein the first de fe ct area l dens ity includes about 80 00 de f ects per square ce ntim eter of th e first copper layer and the second defect areal density includes about 1000 defects per s qu are centimeter of t h e second copper layer; and emplo y the heater and t he g as source to t herm ally anneal the first c o pper layer at the copper substrate. withdrawn
26, (Withdraw n) The system of claim 25, fu rther com prisi ng a che mi cal vapor source configured to provide one or m ore che m ical vapor d e posit ion prec urs(rsfo r f orming graphene, wherein the microprocessor is program ma ble to employ the c hem ical vapor source 7 S/N 13/817,53 3 to grow a graphene mo nolay e r a t the second co pper l ayer using the o n e or more chemical vapor depos ition prec u rsors for for ming graphene. withdrawn
31. (Wit h dra wn) The system of claim 25, whe rei n the copper depos ition source is configured to deposit copper by one or more of sputtering, evaporation, electroplating, or chemical vapor depositio n (CVD). withdrawn
33. (Withdrawn Previously Presented) The s ystem of claim 25. wh ere in the microprocessor is programm able to employ the heater and the gas source to thermally anneal the first copper la y er in an atmo sphere comprisi ng: about 1 mole %4 hydrog en to about 1 0 Inn e % h ydrogen; and about 9 0 mole % to about 99 mole % of the one or more noble gases. withdrawn
(Wi thdraw n-Previously Pre sented) The system o f clai m 25, wherein in a dimension perpendicular to a grap hene m onola ye r, the first copper la yer is c h arac terize d by a first avera ge thickness, the microprocessor being furth er programmable to employ the copper deposition source and the sensor to deposit the second copper layer at a second average thickness that is less tha n the first avera g e thickness. withdrawn
(Cance l led) canceled
(Withdraw n) The system of clai m 25, wh erei n the clea ning agent source is c onfigu red to provide one or more of sp utt er clean ing, acid etching, solvent rins ing, elec t ropolis hin g, or chemical m echanical p olishing. withdrawn
(C an celled) canceled
- 42. 9 canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-copper composite substrate
automated system for manufacturing copper substrate for graphene growth
No layer stack recorded.
Materials described outside the worked examples.
first copper layer (lower purity)
Cu
graphene monolayer
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
defect areal density of first copper layer | 8000 defects per square centimeter | Cu |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,322,096Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 0 N 0 Description AMENDMENTS TO THE SPECIFICATION The following will replace all prior versions of the listed paragraphs in the Specification of the …
FIG. 2 shows a dia g ram 200 of a number of defects that may be visually characterized as dark spots (202), light spots (204), multilayer graphene (206 & 208), …
FIG. 3. Unfortunately 99. 999 % pure copper may cost considerably more than 99.8% copper, between ten to one hundred times more at current prices. Moreover, …
FIG. 4A is a conceptual illustration of operations in growing graphene on high purity copper as described herein. In a diagram 400A, a [[A]] sample of …
FIG. 5 is a flow diagram showing example operations that may be used for carrying out the described method of growing graphene on high purity copper;
FIG. 6 is a block diagram of an automated machine that may be used for carrying out the described method of growing graphene on high purity copper;
FIG. 7. For example, referring to manufacturing controller 690, one or more of the tasks shown in
FIG. 8 illustrates a block diagram of an example computer program product that may be used to control the automated machine of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Curren t ly Amen d ed) A method ot mnulhc n r m ng to mangfhctnre graphene, comprising: provid. ing a copper substrate that includes a fi rst co pper la y er in contact wit h a s econd copper layer, the fi rst copper layer thermall y annealed to the seco n d copper la y er at a the rma l an nea ling te mperature within o ne of: a vacuum and one or more noble gases, the fi rst copper layer characteri z ed b y a first defect areal densit y and a f irst copper percen ta ge by w e ight and the second copper layer characterized by a- second defc c 4 areal density and a second copper percen tag e by w eig ht, wherein the second copper percentage by weight is greater than the fi rst copper percentage by weight 7 wtein4e-rir-t-defe -- aaeal-:tsi-ig; ea4erha-the-secon-defect-a ed density, and wh o rei n 4h e- f r ht deket-aeal-desy-i -e l a de s- ab mt 4-8#fdefee4 -p Fs q ua re centiOeraf he first co pp er la y er-and the secoad-delct areal densit y in e- -des ab m t li X eikts p er s q uare ce o & + meter of the seond c app er 1a y er; and grow ing a gra phene mono laye r via chemical va por deposition on the second copper layer. wherein a defect areal density of the ~raphene monolayer grown on the second copper layer includes about 1000 defects per square centimeter of the graphene monolayer.
(Original) The method of claim 1, wherein pro v idi ng th e copper substrate incl udes: pro vidin g the first copper layer: clea nin a surface of the first copper la yer: depositing th e second copper layer on the clea n ed surface of the first copper la y er to form th e copper substrate; and thermally annealing the copper subs trate.
S/N 13/8 07,533
(Withdrawni) The g raphene-copper composite of claim 2 0, wherein t h e first avera age thickness is at least about 3 mi cromete r s and th e second averag e thickness is on e ato mic mon olayer of copper to about 2 5 microm eters. withdrawn
(Withdraw n --- Previously Presented) The s ys tem of claim 2 5, wherei n the first copper lay er is characterized by a first ox yg en percenta ge by weight, the microprocessor be ine further programmable to employ the copper deposition source to deposit the second coppe r lay er at a second oxy gen p ercentage by weight that is about the same or less than the firs t ox y g en percenta ge by weight. withdrawn
(O riginal) The method of claim., wherein in a di rmensi on perpendicular to the g rap hene m onolayer, the first copper layer is characterized by a first average thickness; the second copper layer is characterize d by a second average thick ness; and the second average thickness is less than the first average thickness.
The met hod of cl aim 3, wherein. the fir st ave rage thickness is at l east about 3 micrometers and the second avera g e thickness is one atomic mo n ola y er of co pper to a bout micrometers. 5. (Cancelled) canceled
9, (Ori g inal) The meth od of clai m 8, wherein the surface of the f irst copper layer is cleaned by one or more of sputter c lean i ng, acid etching, solve t rinsing, el e ctr o polis hing, or chemical m echa rn ica l p olishing,
19, (Ca n celled) canceled
20. (Wit h drawn-Previously Presented) A grap hen e-cop per composite, comprising: a f irst copper layer characterized by. a fi rst copper percentage by wei g ht, a firs t defect area l de n sity, a first oxygen percentage by weight, and a first avera g e thick u ess: 4 S/N 13/817, 533 a second copper la yer having a first surface in contact wi th the fi r st copper layer, the sec o nd copper layer characterized by: a second copper percentage by weight, a second defect areal density, a second oxygen percentage by weight, and a second avera g e thickness, wherein t h e first copper layer is the rm ally annealed io the second copper lay er at a thermal annealing temperature with i n on e of: a vacuum and o ne or m ore noble ga ses: and a gra ph ene m onola y er in contact with a second surf a ce of th e second copper la y er, wherein: the second copper percentag e by weig h t is greater than the fi r st copper percentage by w eight, wherein th e first defect areal density is g reater t h an th e second defect are al de n sity, and wherein the first defect areal density includes about 8000 defects per square centimeter of the first copper layer and the second de fec t ar e al density includes about 1000 d efect s per square centi me ter of th e second copper layer; the second oxygen perce nt age by weig h t is about th e same or less than the first oxygen percenta g e b y weight; and the second a ver age thickness is less than the first average thickness. withdrawn
2 4. (Wit hdrawn-Previously P resented) The grap h ene cop pe r co mp osite of claim 20, wherei n: the second copper percentage b y weight is at least about 99.9 %- the fi rst copper percentage by wei gh t is less than about 99.9%; or the second copper percentage b y weight is at least a b out 99.9% and th e first copper percentage by weight is less than about 99,9%. withdrawn
22, (C ancelle d) S/N 13/817,533 canceled
23. (W ith dra wn-Previously Pr esented) The graphene -copper c omp osite of c laim 20, w herein the second c opper p ercentage by weig ht i s g rea ter t h an the first co pper percentage by weig ht by at least about 0.1%. withdrawn
(W ithdrawn-Previously Presented) A syste m for ma.na fa cturing a. copper substrate for growing gra phene, t he system comprising: a deposition cha m ber; a sample stage configured to hold a copper substrate in t he deposition c hanber: a copper deposition s ou rce; a clea ning a g ent source co nfigu red to direct clea nin agent to the copper substrate held by the sample stage; a sensor configured t o determine a thickness of a layer deposited b y the copper dep osit ion so urce; a heater configured to heat the copper substrate h eld by th e sa m ple stag e to an ann eal ing te m peratur e of abou t 75 0 *C to about 1000;C; a gas source con fi gured to provide a t herm al anneali ng g as to the copper substrate h eld by the sa mple st age; and 6 S/N 13/817, 533 a ri croproces sor coupled to the deposition cha mber, the sa m ple stage, the copper depositi on source, the clea nin agen t source, the sensor, and the h eater, the mic roprocessor programmr able t o: employ t he s ample stage to hold a fi r st copper layer in the deposition chambe r; emplo y the clea ning ag ent s ource to direct c l ean ing agen t to the first copper layer; em plo y the copper depos i tion source and the sensor to deposit a second copper layer on t he fi rst copper layer, wherein the second copper layer is thinner co mpa red to the first copper layer, where in the first copper layer is th erm ally annealed t o the second copper layer at a thermal annealing temperature wi t hin one of: a vac uu m and one or more noble g ases, wherein a first defect areal density o f t he first c opper l a yer is greater than a second defect areal density of the second copper layer, and wherein the first de fe ct area l dens ity includes about 80 00 de f ects per square ce ntim eter of th e first copper layer and the second defect areal density includes about 1000 defects per s qu are centimeter of t h e second copper layer; and emplo y the heater and t he g as source to t herm ally anneal the first c o pper layer at the copper substrate. withdrawn
26, (Withdraw n) The system of claim 25, fu rther com prisi ng a che mi cal vapor source configured to provide one or m ore che m ical vapor d e posit ion prec urs(rsfo r f orming graphene, wherein the microprocessor is program ma ble to employ the c hem ical vapor source 7 S/N 13/817,53 3 to grow a graphene mo nolay e r a t the second co pper l ayer using the o n e or more chemical vapor depos ition prec u rsors for for ming graphene. withdrawn
31. (Wit h dra wn) The system of claim 25, whe rei n the copper depos ition source is configured to deposit copper by one or more of sputtering, evaporation, electroplating, or chemical vapor depositio n (CVD). withdrawn
33. (Withdrawn Previously Presented) The s ystem of claim 25. wh ere in the microprocessor is programm able to employ the heater and the gas source to thermally anneal the first copper la y er in an atmo sphere comprisi ng: about 1 mole %4 hydrog en to about 1 0 Inn e % h ydrogen; and about 9 0 mole % to about 99 mole % of the one or more noble gases. withdrawn
(Wi thdraw n-Previously Pre sented) The system o f clai m 25, wherein in a dimension perpendicular to a grap hene m onola ye r, the first copper la yer is c h arac terize d by a first avera ge thickness, the microprocessor being furth er programmable to employ the copper deposition source and the sensor to deposit the second copper layer at a second average thickness that is less tha n the first avera g e thickness. withdrawn
(Cance l led) canceled
(Withdraw n) The system of clai m 25, wh erei n the clea ning agent source is c onfigu red to provide one or more of sp utt er clean ing, acid etching, solvent rins ing, elec t ropolis hin g, or chemical m echanical p olishing. withdrawn
(C an celled) canceled
- 42. 9 canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-copper composite substrate
automated system for manufacturing copper substrate for graphene growth
No layer stack recorded.
Materials described outside the worked examples.
first copper layer (lower purity)
Cu
graphene monolayer
C
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
defect areal density of first copper layer | 8000 defects per square centimeter | Cu |
Related documents with shared materials, methods, properties, or citations.
defect areal density of second copper layer |
| 1000 defects per square centimeter |
Cu |
defect areal density of graphene monolayer grown on second copper layer | 1000 defects per square centimeter | C |
purity of comparative lower-quality copper substrate | 99.8 wt% | Cu |
purity of high purity copper substrate reference | 99.999 wt% | Cu |
second copper percentage by weight (minimum for high purity layer) | 99.9 wt% | Cu |
METHOD FOR THE FABRICATION AND TRANSFER OF GRAPHENE
defect areal density of second copper layer |
| 1000 defects per square centimeter |
Cu |
defect areal density of graphene monolayer grown on second copper layer | 1000 defects per square centimeter | C |
purity of comparative lower-quality copper substrate | 99.8 wt% | Cu |
purity of high purity copper substrate reference | 99.999 wt% | Cu |
second copper percentage by weight (minimum for high purity layer) | 99.9 wt% | Cu |
METHOD FOR THE FABRICATION AND TRANSFER OF GRAPHENE
defect areal density of second copper layer |
| 1000 defects per square centimeter |
Cu |
defect areal density of graphene monolayer grown on second copper layer | 1000 defects per square centimeter | C |
purity of comparative lower-quality copper substrate | 99.8 wt% | Cu |
purity of high purity copper substrate reference | 99.999 wt% | Cu |
second copper percentage by weight (minimum for high purity layer) | 99.9 wt% | Cu |
METHOD FOR THE FABRICATION AND TRANSFER OF GRAPHENE
defect areal density of second copper layer |
| 1000 defects per square centimeter |
Cu |
defect areal density of graphene monolayer grown on second copper layer | 1000 defects per square centimeter | C |
purity of comparative lower-quality copper substrate | 99.8 wt% | Cu |
purity of high purity copper substrate reference | 99.999 wt% | Cu |
second copper percentage by weight (minimum for high purity layer) | 99.9 wt% | Cu |
METHOD FOR THE FABRICATION AND TRANSFER OF GRAPHENE