Patent
US 10,096,701GALLIUM NITRIDE MATERIALS AND METHODS ASSOCIATED WITH THE SAME
Edwin L. Piner
US
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Patent
Atlas literature
Patent
US 10,096,701Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer according to one embodiment of the present …
FIG. 2 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer according to another embodiment of the present …
FIG. 3 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer formed between layers within the structure …
FIG. 4 schematically illustrates a FET device including a strain-absorbing layer 25 according to another embodiment of the invention.
FIG. 5 is a copy of a STEM (scanning transmission electron microscope) image that illustrates the presence of a silicon nitride strain-absorbing layer between …
FIGS. 6 and 7 are copies of high-resolution TEM images that illustrates the 30 presence of a silicon nitride strain-absorbing layer between an aluminum nitride …
FIG. 8 is a copy of an image published in R. Liu, et. al., Applied Phys. Lett. 83(5), 860 (2003) that illustrates an aluminum nitride layer and silicon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a semiconductor structure comprising: fn rming an amorphous SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.1.6.959.952.1287.999.svg 0.157 1.093 Chemistry Black and white layer on an entire top surface of a non- nitride material of a semiconductor substrate by nitridating the entire top surface, wherein said amorphous strain-absorbing layer does not include gallium; forming a nitride-based material layer using a vertical growth process, wherein the amorphous strain-absorbing layer separates the semiconductor substrate and the nitride-based material layer at all points with the amorphous strain-absorbing layer being directly on the non-nitride material of the semiconducto r substrate and the nitride-based material layer being directly on the strain-absorbing layer, wherein said semiconductor substrate is a non-nitride material-based substrate, wherein the misfit dislocation density in the nitride-based m ate r ial layer is less than about 10 10 defects/c m 2.
The method of claim 1, wherein the semiconductor substrate is substantially planar. Page 2 2004P 80 148 US O₂ PAGE 3 113* RCVD AT 6/201 201 6 2:46:52 PM [Eastern Daylight Time J" SVR:W -P TOFAX-0 D₂/30* DNIS:2738300 " CSID:949 282 1002 * DURATI O N (mm-ss):04 -17 06/20/2016 MON 12:43 FA X 949 282 1002 FARJA M I & FARJA M I LLP->->-> USPTO 004/013 SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.2.1.2193.179.2223.212.svg 0.11 0.10 Chemistry Black and white Atto rn ey Docket No.: 0400 6 26D
The method of claim 1, wherein the semiconductor substrate is silicon.
The method of claim 1, wherein the strain-absorbing layer comprises a silicon nitride-based m aterial.
(or iginal): The method of claim 1, wherein the nitride-based material layer is a single crystal.
(original): The method of claim 1, comprising forming the ni tri de- b ased material layer at temperatures of greater than about 700 0 C. Claim l0: The method of claim 1, wherein the nitride-based material layer comprises a n aluminum nitride-based material.
1: The method of claim 1, wherein the nitride- based material layer has an epitaxial relationship with the semiconductor substrate. Page 3 2004P₈₀ 1 48 US O₂ PAGE 4/13 " R CVD AT 6 1201201B 2: 48:52 PM (Eas tem Daylight T ime j " SVR: W-P TOFAX-002 130 " DNI S:2738300 " CS₁ D:949 282 1002 ' DURA TIO N (m m-ss):04-17 06/20/2016 MON 12:43 FA X 949 282 1002 FARJA M I & FARJA M I LLP->->-> USPTO 005/013 SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.3.1.2187.172.2216.205.svg 0.11 0.097 Chemistry Black and white Attorney Docket No.: 0400626D
The method of claim 1, wherein the nitride-based material layer comprises a gallium nitride material alloy.
The method of claim 1, wherein the nitride-based material layer has a thickness of less tha n 10 0 Ang s troms.
The method of claim 1, wherein the nitride-based material layer has a thickness of greater than 10 Angstroms.
(o riginal): The method of claim 1, further comprising forming a gallium nitride material region over the nitride-based material layer.
(original): The method of claim 1, wherein the misfit dislocation density in the nitride-based material layer is less than about 1 0 5 de t ects/c m 2.
The method of claim 1, wherein the semiconductor substrate comprises a different m aterial than the nitride-based m aterial layer. Page 4 2004P₈₀₁₄₈ US O₂ PAGE 5 113* RCVD AT 6/20/201 6 2:4 6:52 PM [Easte rn Daylight Time]* SVR:W-PTO F AX-002 130* DNIS:2738300 * CSID:949 282 1002 * DURATION (mm-ss):04 -17 06/20/2016 MON 12:44 FA X 949 282 1002 FARJA M I & FARJA M I LLP ->--> USPTO 006/013 Att orney Docket No.: 0400626D
The method of claim 1, wherein the semiconductor substrate has a different crystal structure than the nitride-based material lay er.
The method of claim 1, comprising forming a the semiconductor substrate. Page 5 2004P₈₀₁₄₈ 2:46:52 PM [Eas tem Daylight Time] " SVR:W -P 282 1002 " DURATI O N (mm-ss):04 -17 continuous amorphous strain-absorbing layer on US O₂ PAG E 6 113 " RCVD AT 6 120/201 6 TOFAX-002130 " DNIS:2738300 " CSID:949
Claims 2 -3 canceled
The m eth od of c lai m 1, whercin the aiuur phou s S tra in- absorbing layer is formed in a growth step.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with strain-absorbing layer
Materials described outside the worked examples.
amorphous strain-absorbing layer
silicon nitride-based material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 schematically illustrates a FET device including a strain-absorbing layer 25 according to another embodiment of the invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
misfit dislocation density in nitride-based material layer | ≤ 10000000000 defects/cm2 | nitride-based material layer |
misfit dislocation density in nitride-based material layer (claim 16) | ≤ 100000 defects/cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,096,701Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer according to one embodiment of the present …
FIG. 2 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer according to another embodiment of the present …
FIG. 3 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer formed between layers within the structure …
FIG. 4 schematically illustrates a FET device including a strain-absorbing layer 25 according to another embodiment of the invention.
FIG. 5 is a copy of a STEM (scanning transmission electron microscope) image that illustrates the presence of a silicon nitride strain-absorbing layer between …
FIGS. 6 and 7 are copies of high-resolution TEM images that illustrates the 30 presence of a silicon nitride strain-absorbing layer between an aluminum nitride …
FIG. 8 is a copy of an image published in R. Liu, et. al., Applied Phys. Lett. 83(5), 860 (2003) that illustrates an aluminum nitride layer and silicon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a semiconductor structure comprising: fn rming an amorphous SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.1.6.959.952.1287.999.svg 0.157 1.093 Chemistry Black and white layer on an entire top surface of a non- nitride material of a semiconductor substrate by nitridating the entire top surface, wherein said amorphous strain-absorbing layer does not include gallium; forming a nitride-based material layer using a vertical growth process, wherein the amorphous strain-absorbing layer separates the semiconductor substrate and the nitride-based material layer at all points with the amorphous strain-absorbing layer being directly on the non-nitride material of the semiconducto r substrate and the nitride-based material layer being directly on the strain-absorbing layer, wherein said semiconductor substrate is a non-nitride material-based substrate, wherein the misfit dislocation density in the nitride-based m ate r ial layer is less than about 10 10 defects/c m 2.
The method of claim 1, wherein the semiconductor substrate is substantially planar. Page 2 2004P 80 148 US O₂ PAGE 3 113* RCVD AT 6/201 201 6 2:46:52 PM [Eastern Daylight Time J" SVR:W -P TOFAX-0 D₂/30* DNIS:2738300 " CSID:949 282 1002 * DURATI O N (mm-ss):04 -17 06/20/2016 MON 12:43 FA X 949 282 1002 FARJA M I & FARJA M I LLP->->-> USPTO 004/013 SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.2.1.2193.179.2223.212.svg 0.11 0.10 Chemistry Black and white Atto rn ey Docket No.: 0400 6 26D
The method of claim 1, wherein the semiconductor substrate is silicon.
The method of claim 1, wherein the strain-absorbing layer comprises a silicon nitride-based m aterial.
(or iginal): The method of claim 1, wherein the nitride-based material layer is a single crystal.
(original): The method of claim 1, comprising forming the ni tri de- b ased material layer at temperatures of greater than about 700 0 C. Claim l0: The method of claim 1, wherein the nitride-based material layer comprises a n aluminum nitride-based material.
1: The method of claim 1, wherein the nitride- based material layer has an epitaxial relationship with the semiconductor substrate. Page 3 2004P₈₀ 1 48 US O₂ PAGE 4/13 " R CVD AT 6 1201201B 2: 48:52 PM (Eas tem Daylight T ime j " SVR: W-P TOFAX-002 130 " DNI S:2738300 " CS₁ D:949 282 1002 ' DURA TIO N (m m-ss):04-17 06/20/2016 MON 12:43 FA X 949 282 1002 FARJA M I & FARJA M I LLP->->-> USPTO 005/013 SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.3.1.2187.172.2216.205.svg 0.11 0.097 Chemistry Black and white Attorney Docket No.: 0400626D
The method of claim 1, wherein the nitride-based material layer comprises a gallium nitride material alloy.
The method of claim 1, wherein the nitride-based material layer has a thickness of less tha n 10 0 Ang s troms.
The method of claim 1, wherein the nitride-based material layer has a thickness of greater than 10 Angstroms.
(o riginal): The method of claim 1, further comprising forming a gallium nitride material region over the nitride-based material layer.
(original): The method of claim 1, wherein the misfit dislocation density in the nitride-based material layer is less than about 1 0 5 de t ects/c m 2.
The method of claim 1, wherein the semiconductor substrate comprises a different m aterial than the nitride-based m aterial layer. Page 4 2004P₈₀₁₄₈ US O₂ PAGE 5 113* RCVD AT 6/20/201 6 2:4 6:52 PM [Easte rn Daylight Time]* SVR:W-PTO F AX-002 130* DNIS:2738300 * CSID:949 282 1002 * DURATION (mm-ss):04 -17 06/20/2016 MON 12:44 FA X 949 282 1002 FARJA M I & FARJA M I LLP ->--> USPTO 006/013 Att orney Docket No.: 0400626D
The method of claim 1, wherein the semiconductor substrate has a different crystal structure than the nitride-based material lay er.
The method of claim 1, comprising forming a the semiconductor substrate. Page 5 2004P₈₀₁₄₈ 2:46:52 PM [Eas tem Daylight Time] " SVR:W -P 282 1002 " DURATI O N (mm-ss):04 -17 continuous amorphous strain-absorbing layer on US O₂ PAG E 6 113 " RCVD AT 6 120/201 6 TOFAX-002130 " DNIS:2738300 " CSID:949
Claims 2 -3 canceled
The m eth od of c lai m 1, whercin the aiuur phou s S tra in- absorbing layer is formed in a growth step.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with strain-absorbing layer
Materials described outside the worked examples.
amorphous strain-absorbing layer
silicon nitride-based material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 schematically illustrates a FET device including a strain-absorbing layer 25 according to another embodiment of the invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
misfit dislocation density in nitride-based material layer | ≤ 10000000000 defects/cm2 | nitride-based material layer |
misfit dislocation density in nitride-based material layer (claim 16) | ≤ 100000 defects/cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,096,701Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer according to one embodiment of the present …
FIG. 2 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer according to another embodiment of the present …
FIG. 3 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer formed between layers within the structure …
FIG. 4 schematically illustrates a FET device including a strain-absorbing layer 25 according to another embodiment of the invention.
FIG. 5 is a copy of a STEM (scanning transmission electron microscope) image that illustrates the presence of a silicon nitride strain-absorbing layer between …
FIGS. 6 and 7 are copies of high-resolution TEM images that illustrates the 30 presence of a silicon nitride strain-absorbing layer between an aluminum nitride …
FIG. 8 is a copy of an image published in R. Liu, et. al., Applied Phys. Lett. 83(5), 860 (2003) that illustrates an aluminum nitride layer and silicon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a semiconductor structure comprising: fn rming an amorphous SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.1.6.959.952.1287.999.svg 0.157 1.093 Chemistry Black and white layer on an entire top surface of a non- nitride material of a semiconductor substrate by nitridating the entire top surface, wherein said amorphous strain-absorbing layer does not include gallium; forming a nitride-based material layer using a vertical growth process, wherein the amorphous strain-absorbing layer separates the semiconductor substrate and the nitride-based material layer at all points with the amorphous strain-absorbing layer being directly on the non-nitride material of the semiconducto r substrate and the nitride-based material layer being directly on the strain-absorbing layer, wherein said semiconductor substrate is a non-nitride material-based substrate, wherein the misfit dislocation density in the nitride-based m ate r ial layer is less than about 10 10 defects/c m 2.
The method of claim 1, wherein the semiconductor substrate is substantially planar. Page 2 2004P 80 148 US O₂ PAGE 3 113* RCVD AT 6/201 201 6 2:46:52 PM [Eastern Daylight Time J" SVR:W -P TOFAX-0 D₂/30* DNIS:2738300 " CSID:949 282 1002 * DURATI O N (mm-ss):04 -17 06/20/2016 MON 12:43 FA X 949 282 1002 FARJA M I & FARJA M I LLP->->-> USPTO 004/013 SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.2.1.2193.179.2223.212.svg 0.11 0.10 Chemistry Black and white Atto rn ey Docket No.: 0400 6 26D
The method of claim 1, wherein the semiconductor substrate is silicon.
The method of claim 1, wherein the strain-absorbing layer comprises a silicon nitride-based m aterial.
(or iginal): The method of claim 1, wherein the nitride-based material layer is a single crystal.
(original): The method of claim 1, comprising forming the ni tri de- b ased material layer at temperatures of greater than about 700 0 C. Claim l0: The method of claim 1, wherein the nitride-based material layer comprises a n aluminum nitride-based material.
1: The method of claim 1, wherein the nitride- based material layer has an epitaxial relationship with the semiconductor substrate. Page 3 2004P₈₀ 1 48 US O₂ PAGE 4/13 " R CVD AT 6 1201201B 2: 48:52 PM (Eas tem Daylight T ime j " SVR: W-P TOFAX-002 130 " DNI S:2738300 " CS₁ D:949 282 1002 ' DURA TIO N (m m-ss):04-17 06/20/2016 MON 12:43 FA X 949 282 1002 FARJA M I & FARJA M I LLP->->-> USPTO 005/013 SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.3.1.2187.172.2216.205.svg 0.11 0.097 Chemistry Black and white Attorney Docket No.: 0400626D
The method of claim 1, wherein the nitride-based material layer comprises a gallium nitride material alloy.
The method of claim 1, wherein the nitride-based material layer has a thickness of less tha n 10 0 Ang s troms.
The method of claim 1, wherein the nitride-based material layer has a thickness of greater than 10 Angstroms.
(o riginal): The method of claim 1, further comprising forming a gallium nitride material region over the nitride-based material layer.
(original): The method of claim 1, wherein the misfit dislocation density in the nitride-based material layer is less than about 1 0 5 de t ects/c m 2.
The method of claim 1, wherein the semiconductor substrate comprises a different m aterial than the nitride-based m aterial layer. Page 4 2004P₈₀₁₄₈ US O₂ PAGE 5 113* RCVD AT 6/20/201 6 2:4 6:52 PM [Easte rn Daylight Time]* SVR:W-PTO F AX-002 130* DNIS:2738300 * CSID:949 282 1002 * DURATION (mm-ss):04 -17 06/20/2016 MON 12:44 FA X 949 282 1002 FARJA M I & FARJA M I LLP ->--> USPTO 006/013 Att orney Docket No.: 0400626D
The method of claim 1, wherein the semiconductor substrate has a different crystal structure than the nitride-based material lay er.
The method of claim 1, comprising forming a the semiconductor substrate. Page 5 2004P₈₀₁₄₈ 2:46:52 PM [Eas tem Daylight Time] " SVR:W -P 282 1002 " DURATI O N (mm-ss):04 -17 continuous amorphous strain-absorbing layer on US O₂ PAG E 6 113 " RCVD AT 6 120/201 6 TOFAX-002130 " DNIS:2738300 " CSID:949
Claims 2 -3 canceled
The m eth od of c lai m 1, whercin the aiuur phou s S tra in- absorbing layer is formed in a growth step.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with strain-absorbing layer
Materials described outside the worked examples.
amorphous strain-absorbing layer
silicon nitride-based material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 schematically illustrates a FET device including a strain-absorbing layer 25 according to another embodiment of the invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
misfit dislocation density in nitride-based material layer | ≤ 10000000000 defects/cm2 | nitride-based material layer |
misfit dislocation density in nitride-based material layer (claim 16) | ≤ 100000 defects/cm2 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,096,701Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer according to one embodiment of the present …
FIG. 2 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer according to another embodiment of the present …
FIG. 3 illustrates a gallium nitride material-based semiconductor structure including a strain- absorbing layer formed between layers within the structure …
FIG. 4 schematically illustrates a FET device including a strain-absorbing layer 25 according to another embodiment of the invention.
FIG. 5 is a copy of a STEM (scanning transmission electron microscope) image that illustrates the presence of a silicon nitride strain-absorbing layer between …
FIGS. 6 and 7 are copies of high-resolution TEM images that illustrates the 30 presence of a silicon nitride strain-absorbing layer between an aluminum nitride …
FIG. 8 is a copy of an image published in R. Liu, et. al., Applied Phys. Lett. 83(5), 860 (2003) that illustrates an aluminum nitride layer and silicon …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a semiconductor structure comprising: fn rming an amorphous SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.1.6.959.952.1287.999.svg 0.157 1.093 Chemistry Black and white layer on an entire top surface of a non- nitride material of a semiconductor substrate by nitridating the entire top surface, wherein said amorphous strain-absorbing layer does not include gallium; forming a nitride-based material layer using a vertical growth process, wherein the amorphous strain-absorbing layer separates the semiconductor substrate and the nitride-based material layer at all points with the amorphous strain-absorbing layer being directly on the non-nitride material of the semiconducto r substrate and the nitride-based material layer being directly on the strain-absorbing layer, wherein said semiconductor substrate is a non-nitride material-based substrate, wherein the misfit dislocation density in the nitride-based m ate r ial layer is less than about 10 10 defects/c m 2.
The method of claim 1, wherein the semiconductor substrate is substantially planar. Page 2 2004P 80 148 US O₂ PAGE 3 113* RCVD AT 6/201 201 6 2:46:52 PM [Eastern Daylight Time J" SVR:W -P TOFAX-0 D₂/30* DNIS:2738300 " CSID:949 282 1002 * DURATI O N (mm-ss):04 -17 06/20/2016 MON 12:43 FA X 949 282 1002 FARJA M I & FARJA M I LLP->->-> USPTO 004/013 SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.2.1.2193.179.2223.212.svg 0.11 0.10 Chemistry Black and white Atto rn ey Docket No.: 0400 6 26D
The method of claim 1, wherein the semiconductor substrate is silicon.
The method of claim 1, wherein the strain-absorbing layer comprises a silicon nitride-based m aterial.
(or iginal): The method of claim 1, wherein the nitride-based material layer is a single crystal.
(original): The method of claim 1, comprising forming the ni tri de- b ased material layer at temperatures of greater than about 700 0 C. Claim l0: The method of claim 1, wherein the nitride-based material layer comprises a n aluminum nitride-based material.
1: The method of claim 1, wherein the nitride- based material layer has an epitaxial relationship with the semiconductor substrate. Page 3 2004P₈₀ 1 48 US O₂ PAGE 4/13 " R CVD AT 6 1201201B 2: 48:52 PM (Eas tem Daylight T ime j " SVR: W-P TOFAX-002 130 " DNI S:2738300 " CS₁ D:949 282 1002 ' DURA TIO N (m m-ss):04-17 06/20/2016 MON 12:43 FA X 949 282 1002 FARJA M I & FARJA M I LLP->->-> USPTO 005/013 SVG 12023480.06-20-2016.IPS₆SRZWRXEAPX0.CLM.3.1.2187.172.2216.205.svg 0.11 0.097 Chemistry Black and white Attorney Docket No.: 0400626D
The method of claim 1, wherein the nitride-based material layer comprises a gallium nitride material alloy.
The method of claim 1, wherein the nitride-based material layer has a thickness of less tha n 10 0 Ang s troms.
The method of claim 1, wherein the nitride-based material layer has a thickness of greater than 10 Angstroms.
(o riginal): The method of claim 1, further comprising forming a gallium nitride material region over the nitride-based material layer.
(original): The method of claim 1, wherein the misfit dislocation density in the nitride-based material layer is less than about 1 0 5 de t ects/c m 2.
The method of claim 1, wherein the semiconductor substrate comprises a different m aterial than the nitride-based m aterial layer. Page 4 2004P₈₀₁₄₈ US O₂ PAGE 5 113* RCVD AT 6/20/201 6 2:4 6:52 PM [Easte rn Daylight Time]* SVR:W-PTO F AX-002 130* DNIS:2738300 * CSID:949 282 1002 * DURATION (mm-ss):04 -17 06/20/2016 MON 12:44 FA X 949 282 1002 FARJA M I & FARJA M I LLP ->--> USPTO 006/013 Att orney Docket No.: 0400626D
The method of claim 1, wherein the semiconductor substrate has a different crystal structure than the nitride-based material lay er.
The method of claim 1, comprising forming a the semiconductor substrate. Page 5 2004P₈₀₁₄₈ 2:46:52 PM [Eas tem Daylight Time] " SVR:W -P 282 1002 " DURATI O N (mm-ss):04 -17 continuous amorphous strain-absorbing layer on US O₂ PAG E 6 113 " RCVD AT 6 120/201 6 TOFAX-002130 " DNIS:2738300 " CSID:949
Claims 2 -3 canceled
The m eth od of c lai m 1, whercin the aiuur phou s S tra in- absorbing layer is formed in a growth step.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor structure with strain-absorbing layer
Materials described outside the worked examples.
amorphous strain-absorbing layer
silicon nitride-based material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 schematically illustrates a FET device including a strain-absorbing layer 25 according to another embodiment of the invention.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
misfit dislocation density in nitride-based material layer | ≤ 10000000000 defects/cm2 | nitride-based material layer |
misfit dislocation density in nitride-based material layer (claim 16) | ≤ 100000 defects/cm2 |
Related documents with shared materials, methods, properties, or citations.
nitride-based material layer
silicon substrate
Si
aluminum nitride-based material
gallium nitride material alloy
gallium nitride material region
GaN
silicon nitride
SixNy
compositionally-graded transition layer
FIG. 5 is a copy of a STEM (scanning transmission electron microscope) image that illustrates the presence of a silicon nitride strain-absorbing layer between …
FIGS. 6 and 7 are copies of high-resolution TEM images that illustrates the 30 presence of a silicon nitride strain-absorbing layer between an aluminum nitride …
nitride-based material layer |
nitride-based material layer thickness upper bound (claim 13) | ≤ 100 Angstroms | nitride-based material layer |
nitride-based material layer thickness lower bound (claim 14) | ≥ 10 Angstroms | nitride-based material layer |
Thickness | 10–5000 nm | — |
Thickness | 125–800 µm | — |
Thickness | 400–800 µm | — |
Thickness | 200–800 µm | — |
Temperature | 1000–1100 °C | — |
Pressure | 20–40 torr | — |
Temperature | 500–600 °C | — |
Thickness | ≤ 1 Å | — |
Thickness | ≤ 50 Å | — |
Thickness | ≤ 125 µm | — |
Thickness | ≤ 150 µm | — |
Thickness | ≥ 10 Å | — |
Thickness | ≥ 20 Å | — |
Thickness | ≥ 0.1 µm | — |
Thickness | ≥ 0.5 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 125 µm | — |
Temperature | ≥ 700 °C | — |
nitride-based material layer
silicon substrate
Si
aluminum nitride-based material
gallium nitride material alloy
gallium nitride material region
GaN
silicon nitride
SixNy
compositionally-graded transition layer
FIG. 5 is a copy of a STEM (scanning transmission electron microscope) image that illustrates the presence of a silicon nitride strain-absorbing layer between …
FIGS. 6 and 7 are copies of high-resolution TEM images that illustrates the 30 presence of a silicon nitride strain-absorbing layer between an aluminum nitride …
nitride-based material layer |
nitride-based material layer thickness upper bound (claim 13) | ≤ 100 Angstroms | nitride-based material layer |
nitride-based material layer thickness lower bound (claim 14) | ≥ 10 Angstroms | nitride-based material layer |
Thickness | 10–5000 nm | — |
Thickness | 125–800 µm | — |
Thickness | 400–800 µm | — |
Thickness | 200–800 µm | — |
Temperature | 1000–1100 °C | — |
Pressure | 20–40 torr | — |
Temperature | 500–600 °C | — |
Thickness | ≤ 1 Å | — |
Thickness | ≤ 50 Å | — |
Thickness | ≤ 125 µm | — |
Thickness | ≤ 150 µm | — |
Thickness | ≥ 10 Å | — |
Thickness | ≥ 20 Å | — |
Thickness | ≥ 0.1 µm | — |
Thickness | ≥ 0.5 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 125 µm | — |
Temperature | ≥ 700 °C | — |
nitride-based material layer
silicon substrate
Si
aluminum nitride-based material
gallium nitride material alloy
gallium nitride material region
GaN
silicon nitride
SixNy
compositionally-graded transition layer
FIG. 5 is a copy of a STEM (scanning transmission electron microscope) image that illustrates the presence of a silicon nitride strain-absorbing layer between …
FIGS. 6 and 7 are copies of high-resolution TEM images that illustrates the 30 presence of a silicon nitride strain-absorbing layer between an aluminum nitride …
nitride-based material layer |
nitride-based material layer thickness upper bound (claim 13) | ≤ 100 Angstroms | nitride-based material layer |
nitride-based material layer thickness lower bound (claim 14) | ≥ 10 Angstroms | nitride-based material layer |
Thickness | 10–5000 nm | — |
Thickness | 125–800 µm | — |
Thickness | 400–800 µm | — |
Thickness | 200–800 µm | — |
Temperature | 1000–1100 °C | — |
Pressure | 20–40 torr | — |
Temperature | 500–600 °C | — |
Thickness | ≤ 1 Å | — |
Thickness | ≤ 50 Å | — |
Thickness | ≤ 125 µm | — |
Thickness | ≤ 150 µm | — |
Thickness | ≥ 10 Å | — |
Thickness | ≥ 20 Å | — |
Thickness | ≥ 0.1 µm | — |
Thickness | ≥ 0.5 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 125 µm | — |
Temperature | ≥ 700 °C | — |
nitride-based material layer
silicon substrate
Si
aluminum nitride-based material
gallium nitride material alloy
gallium nitride material region
GaN
silicon nitride
SixNy
compositionally-graded transition layer
FIG. 5 is a copy of a STEM (scanning transmission electron microscope) image that illustrates the presence of a silicon nitride strain-absorbing layer between …
FIGS. 6 and 7 are copies of high-resolution TEM images that illustrates the 30 presence of a silicon nitride strain-absorbing layer between an aluminum nitride …
nitride-based material layer |
nitride-based material layer thickness upper bound (claim 13) | ≤ 100 Angstroms | nitride-based material layer |
nitride-based material layer thickness lower bound (claim 14) | ≥ 10 Angstroms | nitride-based material layer |
Thickness | 10–5000 nm | — |
Thickness | 125–800 µm | — |
Thickness | 400–800 µm | — |
Thickness | 200–800 µm | — |
Temperature | 1000–1100 °C | — |
Pressure | 20–40 torr | — |
Temperature | 500–600 °C | — |
Thickness | ≤ 1 Å | — |
Thickness | ≤ 50 Å | — |
Thickness | ≤ 125 µm | — |
Thickness | ≤ 150 µm | — |
Thickness | ≥ 10 Å | — |
Thickness | ≥ 20 Å | — |
Thickness | ≥ 0.1 µm | — |
Thickness | ≥ 0.5 µm | — |
Thickness | ≥ 2 µm | — |
Thickness | ≥ 5 µm | — |
Thickness | ≥ 125 µm | — |
Temperature | ≥ 700 °C | — |