Patent
US 9,530,933GaN BASE LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR USING MECHANICAL POST-PROCESSING
Junhee CHOI
US
Copyright © 2026 Matter42. All rights reserved.
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US 9,530,933Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 9 are cross-sectional views illustrating a method of manufacturing a GaN based light emitting device for each process according to an example …
FIG. 2, the first void V 1 is symbolically represented for convenience's sake. [0023] Then, the second GaN layer 30 is formed and an activation layer 32 is …
FIG. 3 is heated to temperature Tg at which viscosity of the adhesive layer 36 is measured. Due to this heating, the third GaN layer 34 starts to be covered …
FIG. 4. At this time, the heating is stopped. After a predetermined time has passed, the adhesive tape 38 is detached. The adhesive layer 36 is also separated …
FIG. 5 illustrates a result of detaching the adhesive tape 38. The first void (V 1 in
FIG. 6, an interlayer insulating layer 40 is formed on the mask layer 26 between the third GaN layers 34. The interlayer insulating layer 40 may be formed from …
FIG. 7, a flexible substrate 46 is attached to the top electrode 42. A buried layer 44 is attached to a bottom surface of the flexible substrate 46. The buried …
FIG. 8. Since the adhesion of the interface between the first GaN layer 24 and the metal layer 22 is sufficiently weak, the substrate 20 may be easily removed …
FIG. 9, a first GaN layer 24 is disposed on a bottom electrode 48. The bottom electrode 48 may be, for example, a Ti/Ag electrode. The first GaN layer 24 may be …
FIG. 10, when heating temperature reaches Tg (about 164 C), it can be seen that the adhesive layer 36 starts to cover the third GaN layer 34 of pyramid type (a …
FIG. 11 is images illustrating that the interface between the metal layer 22 and the first GaN layer 24 is weakened in processes of high temperature growth and …
FIG. 12 is SEM images illustrating a case where a GaN based LED array and a GaN based LED are validly buried in a polymer which is attached to a flexible …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A GaN based light emitting device comprising: first and second electrodes, and a flexible substrate which are sequentially stacked; an n-type GaN layer, an activation layer, and a p-type GaN layer interposed between the first and second electrodes and forming a core-shell structure; and a buried layer interposed between the flexible substrate and the first electrode, wherein the first electrode and the core-shell structure are buried in the buried layer.
: The GaN based light emitting device of claim 1, wherein the core-shell structure has a pyramid type.
: The GaN based light emitting device of claim 1, wherein the flexible substrate is a polyethylene teraphthalate (PET) substrate or a polydimethylsiloxane (PDMS) substrate.
: A method of manufacturing a GaN based light emitting device, comprising: forming a metal layer on a substrate; 2 AMENDMENT UNDER 37 C.F.R. § 1.312 Attorney Docket No.: Q₂₂₄₅₉₃ Appln. No.: 14/909,297 forming a first GaN layer having a difference in a coefficient of thermal expansion from the first GaN layer the metal layer; primarily weakening adhesion of an interface between the metal layer and the fist first GaN layer while selectively forming a second GaN layer on the first GaN layer; forming an activation layer on the second GaN layer; forming a third GaN layer on the activation layer; secondarily weakening the adhesion of the interface between the metal layer and the first GaN layer; forming a first electrode contacting with a portion of the third GaN layer; separating the metal layer from the first GaN layer and transferring the first GaN layer and a product formed thereon to a flexible substrate; and forming a second electrode on the separated surface of the first GaN layer.
: The method of claim 4, wherein the first GaN layer is formed at lower temperature than that at which the second GaN layer is formed.
: The method of claim 4, wherein the selective forming of the second GaN layer comprises: selectively forming a mask layer on the first GaN layer; forming holes exposing some portions of the first GaN layer on the mask layer; and forming the second GaN layer on the first GaN layer which is exposed through the holes. 3 AMENDMENT UNDER 37 C.F.R. § 1.312 Attorney Docket No.: Q₂₂₄₅₉₃ Appln. No.: 14/909,297
: The method of claim 4, wherein the primary weakening of the adhesion comprises forming a first void in the interface between the metal layer and the first GaN layer.
: The method of claim 4, wherein the secondary weakening of the adhesion comprises: attaching a tape on the third GaN layer; and removing the tape.
Layer stacks claimed or described, ordered top of device to substrate.
GaN based flexible light emitting device (LED) with core-shell structure
Materials described outside the worked examples.
GaN
buried layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, an interlayer insulating layer 40 is formed on the mask layer 26 between the third GaN layers 34. The interlayer insulating layer 40 may be formed from …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,530,933Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 9 are cross-sectional views illustrating a method of manufacturing a GaN based light emitting device for each process according to an example …
FIG. 2, the first void V 1 is symbolically represented for convenience's sake. [0023] Then, the second GaN layer 30 is formed and an activation layer 32 is …
FIG. 3 is heated to temperature Tg at which viscosity of the adhesive layer 36 is measured. Due to this heating, the third GaN layer 34 starts to be covered …
FIG. 4. At this time, the heating is stopped. After a predetermined time has passed, the adhesive tape 38 is detached. The adhesive layer 36 is also separated …
FIG. 5 illustrates a result of detaching the adhesive tape 38. The first void (V 1 in
FIG. 6, an interlayer insulating layer 40 is formed on the mask layer 26 between the third GaN layers 34. The interlayer insulating layer 40 may be formed from …
FIG. 7, a flexible substrate 46 is attached to the top electrode 42. A buried layer 44 is attached to a bottom surface of the flexible substrate 46. The buried …
FIG. 8. Since the adhesion of the interface between the first GaN layer 24 and the metal layer 22 is sufficiently weak, the substrate 20 may be easily removed …
FIG. 9, a first GaN layer 24 is disposed on a bottom electrode 48. The bottom electrode 48 may be, for example, a Ti/Ag electrode. The first GaN layer 24 may be …
FIG. 10, when heating temperature reaches Tg (about 164 C), it can be seen that the adhesive layer 36 starts to cover the third GaN layer 34 of pyramid type (a …
FIG. 11 is images illustrating that the interface between the metal layer 22 and the first GaN layer 24 is weakened in processes of high temperature growth and …
FIG. 12 is SEM images illustrating a case where a GaN based LED array and a GaN based LED are validly buried in a polymer which is attached to a flexible …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A GaN based light emitting device comprising: first and second electrodes, and a flexible substrate which are sequentially stacked; an n-type GaN layer, an activation layer, and a p-type GaN layer interposed between the first and second electrodes and forming a core-shell structure; and a buried layer interposed between the flexible substrate and the first electrode, wherein the first electrode and the core-shell structure are buried in the buried layer.
: The GaN based light emitting device of claim 1, wherein the core-shell structure has a pyramid type.
: The GaN based light emitting device of claim 1, wherein the flexible substrate is a polyethylene teraphthalate (PET) substrate or a polydimethylsiloxane (PDMS) substrate.
: A method of manufacturing a GaN based light emitting device, comprising: forming a metal layer on a substrate; 2 AMENDMENT UNDER 37 C.F.R. § 1.312 Attorney Docket No.: Q₂₂₄₅₉₃ Appln. No.: 14/909,297 forming a first GaN layer having a difference in a coefficient of thermal expansion from the first GaN layer the metal layer; primarily weakening adhesion of an interface between the metal layer and the fist first GaN layer while selectively forming a second GaN layer on the first GaN layer; forming an activation layer on the second GaN layer; forming a third GaN layer on the activation layer; secondarily weakening the adhesion of the interface between the metal layer and the first GaN layer; forming a first electrode contacting with a portion of the third GaN layer; separating the metal layer from the first GaN layer and transferring the first GaN layer and a product formed thereon to a flexible substrate; and forming a second electrode on the separated surface of the first GaN layer.
: The method of claim 4, wherein the first GaN layer is formed at lower temperature than that at which the second GaN layer is formed.
: The method of claim 4, wherein the selective forming of the second GaN layer comprises: selectively forming a mask layer on the first GaN layer; forming holes exposing some portions of the first GaN layer on the mask layer; and forming the second GaN layer on the first GaN layer which is exposed through the holes. 3 AMENDMENT UNDER 37 C.F.R. § 1.312 Attorney Docket No.: Q₂₂₄₅₉₃ Appln. No.: 14/909,297
: The method of claim 4, wherein the primary weakening of the adhesion comprises forming a first void in the interface between the metal layer and the first GaN layer.
: The method of claim 4, wherein the secondary weakening of the adhesion comprises: attaching a tape on the third GaN layer; and removing the tape.
Layer stacks claimed or described, ordered top of device to substrate.
GaN based flexible light emitting device (LED) with core-shell structure
Materials described outside the worked examples.
GaN
buried layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, an interlayer insulating layer 40 is formed on the mask layer 26 between the third GaN layers 34. The interlayer insulating layer 40 may be formed from …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,530,933Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 9 are cross-sectional views illustrating a method of manufacturing a GaN based light emitting device for each process according to an example …
FIG. 2, the first void V 1 is symbolically represented for convenience's sake. [0023] Then, the second GaN layer 30 is formed and an activation layer 32 is …
FIG. 3 is heated to temperature Tg at which viscosity of the adhesive layer 36 is measured. Due to this heating, the third GaN layer 34 starts to be covered …
FIG. 4. At this time, the heating is stopped. After a predetermined time has passed, the adhesive tape 38 is detached. The adhesive layer 36 is also separated …
FIG. 5 illustrates a result of detaching the adhesive tape 38. The first void (V 1 in
FIG. 6, an interlayer insulating layer 40 is formed on the mask layer 26 between the third GaN layers 34. The interlayer insulating layer 40 may be formed from …
FIG. 7, a flexible substrate 46 is attached to the top electrode 42. A buried layer 44 is attached to a bottom surface of the flexible substrate 46. The buried …
FIG. 8. Since the adhesion of the interface between the first GaN layer 24 and the metal layer 22 is sufficiently weak, the substrate 20 may be easily removed …
FIG. 9, a first GaN layer 24 is disposed on a bottom electrode 48. The bottom electrode 48 may be, for example, a Ti/Ag electrode. The first GaN layer 24 may be …
FIG. 10, when heating temperature reaches Tg (about 164 C), it can be seen that the adhesive layer 36 starts to cover the third GaN layer 34 of pyramid type (a …
FIG. 11 is images illustrating that the interface between the metal layer 22 and the first GaN layer 24 is weakened in processes of high temperature growth and …
FIG. 12 is SEM images illustrating a case where a GaN based LED array and a GaN based LED are validly buried in a polymer which is attached to a flexible …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A GaN based light emitting device comprising: first and second electrodes, and a flexible substrate which are sequentially stacked; an n-type GaN layer, an activation layer, and a p-type GaN layer interposed between the first and second electrodes and forming a core-shell structure; and a buried layer interposed between the flexible substrate and the first electrode, wherein the first electrode and the core-shell structure are buried in the buried layer.
: The GaN based light emitting device of claim 1, wherein the core-shell structure has a pyramid type.
: The GaN based light emitting device of claim 1, wherein the flexible substrate is a polyethylene teraphthalate (PET) substrate or a polydimethylsiloxane (PDMS) substrate.
: A method of manufacturing a GaN based light emitting device, comprising: forming a metal layer on a substrate; 2 AMENDMENT UNDER 37 C.F.R. § 1.312 Attorney Docket No.: Q₂₂₄₅₉₃ Appln. No.: 14/909,297 forming a first GaN layer having a difference in a coefficient of thermal expansion from the first GaN layer the metal layer; primarily weakening adhesion of an interface between the metal layer and the fist first GaN layer while selectively forming a second GaN layer on the first GaN layer; forming an activation layer on the second GaN layer; forming a third GaN layer on the activation layer; secondarily weakening the adhesion of the interface between the metal layer and the first GaN layer; forming a first electrode contacting with a portion of the third GaN layer; separating the metal layer from the first GaN layer and transferring the first GaN layer and a product formed thereon to a flexible substrate; and forming a second electrode on the separated surface of the first GaN layer.
: The method of claim 4, wherein the first GaN layer is formed at lower temperature than that at which the second GaN layer is formed.
: The method of claim 4, wherein the selective forming of the second GaN layer comprises: selectively forming a mask layer on the first GaN layer; forming holes exposing some portions of the first GaN layer on the mask layer; and forming the second GaN layer on the first GaN layer which is exposed through the holes. 3 AMENDMENT UNDER 37 C.F.R. § 1.312 Attorney Docket No.: Q₂₂₄₅₉₃ Appln. No.: 14/909,297
: The method of claim 4, wherein the primary weakening of the adhesion comprises forming a first void in the interface between the metal layer and the first GaN layer.
: The method of claim 4, wherein the secondary weakening of the adhesion comprises: attaching a tape on the third GaN layer; and removing the tape.
Layer stacks claimed or described, ordered top of device to substrate.
GaN based flexible light emitting device (LED) with core-shell structure
Materials described outside the worked examples.
GaN
buried layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, an interlayer insulating layer 40 is formed on the mask layer 26 between the third GaN layers 34. The interlayer insulating layer 40 may be formed from …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,530,933Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 to 9 are cross-sectional views illustrating a method of manufacturing a GaN based light emitting device for each process according to an example …
FIG. 2, the first void V 1 is symbolically represented for convenience's sake. [0023] Then, the second GaN layer 30 is formed and an activation layer 32 is …
FIG. 3 is heated to temperature Tg at which viscosity of the adhesive layer 36 is measured. Due to this heating, the third GaN layer 34 starts to be covered …
FIG. 4. At this time, the heating is stopped. After a predetermined time has passed, the adhesive tape 38 is detached. The adhesive layer 36 is also separated …
FIG. 5 illustrates a result of detaching the adhesive tape 38. The first void (V 1 in
FIG. 6, an interlayer insulating layer 40 is formed on the mask layer 26 between the third GaN layers 34. The interlayer insulating layer 40 may be formed from …
FIG. 7, a flexible substrate 46 is attached to the top electrode 42. A buried layer 44 is attached to a bottom surface of the flexible substrate 46. The buried …
FIG. 8. Since the adhesion of the interface between the first GaN layer 24 and the metal layer 22 is sufficiently weak, the substrate 20 may be easily removed …
FIG. 9, a first GaN layer 24 is disposed on a bottom electrode 48. The bottom electrode 48 may be, for example, a Ti/Ag electrode. The first GaN layer 24 may be …
FIG. 10, when heating temperature reaches Tg (about 164 C), it can be seen that the adhesive layer 36 starts to cover the third GaN layer 34 of pyramid type (a …
FIG. 11 is images illustrating that the interface between the metal layer 22 and the first GaN layer 24 is weakened in processes of high temperature growth and …
FIG. 12 is SEM images illustrating a case where a GaN based LED array and a GaN based LED are validly buried in a polymer which is attached to a flexible …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A GaN based light emitting device comprising: first and second electrodes, and a flexible substrate which are sequentially stacked; an n-type GaN layer, an activation layer, and a p-type GaN layer interposed between the first and second electrodes and forming a core-shell structure; and a buried layer interposed between the flexible substrate and the first electrode, wherein the first electrode and the core-shell structure are buried in the buried layer.
: The GaN based light emitting device of claim 1, wherein the core-shell structure has a pyramid type.
: The GaN based light emitting device of claim 1, wherein the flexible substrate is a polyethylene teraphthalate (PET) substrate or a polydimethylsiloxane (PDMS) substrate.
: A method of manufacturing a GaN based light emitting device, comprising: forming a metal layer on a substrate; 2 AMENDMENT UNDER 37 C.F.R. § 1.312 Attorney Docket No.: Q₂₂₄₅₉₃ Appln. No.: 14/909,297 forming a first GaN layer having a difference in a coefficient of thermal expansion from the first GaN layer the metal layer; primarily weakening adhesion of an interface between the metal layer and the fist first GaN layer while selectively forming a second GaN layer on the first GaN layer; forming an activation layer on the second GaN layer; forming a third GaN layer on the activation layer; secondarily weakening the adhesion of the interface between the metal layer and the first GaN layer; forming a first electrode contacting with a portion of the third GaN layer; separating the metal layer from the first GaN layer and transferring the first GaN layer and a product formed thereon to a flexible substrate; and forming a second electrode on the separated surface of the first GaN layer.
: The method of claim 4, wherein the first GaN layer is formed at lower temperature than that at which the second GaN layer is formed.
: The method of claim 4, wherein the selective forming of the second GaN layer comprises: selectively forming a mask layer on the first GaN layer; forming holes exposing some portions of the first GaN layer on the mask layer; and forming the second GaN layer on the first GaN layer which is exposed through the holes. 3 AMENDMENT UNDER 37 C.F.R. § 1.312 Attorney Docket No.: Q₂₂₄₅₉₃ Appln. No.: 14/909,297
: The method of claim 4, wherein the primary weakening of the adhesion comprises forming a first void in the interface between the metal layer and the first GaN layer.
: The method of claim 4, wherein the secondary weakening of the adhesion comprises: attaching a tape on the third GaN layer; and removing the tape.
Layer stacks claimed or described, ordered top of device to substrate.
GaN based flexible light emitting device (LED) with core-shell structure
Materials described outside the worked examples.
GaN
buried layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, an interlayer insulating layer 40 is formed on the mask layer 26 between the third GaN layers 34. The interlayer insulating layer 40 may be formed from …
Related documents with shared materials, methods, properties, or citations.
polyethylene terephthalate (PET)
polydimethylsiloxane (PDMS)
FIG. 10, when heating temperature reaches Tg (about 164 C), it can be seen that the adhesive layer 36 starts to cover the third GaN layer 34 of pyramid type (a …
FIG. 11 is images illustrating that the interface between the metal layer 22 and the first GaN layer 24 is weakened in processes of high temperature growth and …
FIG. 12 is SEM images illustrating a case where a GaN based LED array and a GaN based LED are validly buried in a polymer which is attached to a flexible …
polyethylene terephthalate (PET)
polydimethylsiloxane (PDMS)
FIG. 10, when heating temperature reaches Tg (about 164 C), it can be seen that the adhesive layer 36 starts to cover the third GaN layer 34 of pyramid type (a …
FIG. 11 is images illustrating that the interface between the metal layer 22 and the first GaN layer 24 is weakened in processes of high temperature growth and …
FIG. 12 is SEM images illustrating a case where a GaN based LED array and a GaN based LED are validly buried in a polymer which is attached to a flexible …
polyethylene terephthalate (PET)
polydimethylsiloxane (PDMS)
FIG. 10, when heating temperature reaches Tg (about 164 C), it can be seen that the adhesive layer 36 starts to cover the third GaN layer 34 of pyramid type (a …
FIG. 11 is images illustrating that the interface between the metal layer 22 and the first GaN layer 24 is weakened in processes of high temperature growth and …
FIG. 12 is SEM images illustrating a case where a GaN based LED array and a GaN based LED are validly buried in a polymer which is attached to a flexible …
polyethylene terephthalate (PET)
polydimethylsiloxane (PDMS)
FIG. 10, when heating temperature reaches Tg (about 164 C), it can be seen that the adhesive layer 36 starts to cover the third GaN layer 34 of pyramid type (a …
FIG. 11 is images illustrating that the interface between the metal layer 22 and the first GaN layer 24 is weakened in processes of high temperature growth and …
FIG. 12 is SEM images illustrating a case where a GaN based LED array and a GaN based LED are validly buried in a polymer which is attached to a flexible …