GALLIUM ARSENIDE SUBSTRATE COMPRISING A SURFACE OXIDE LAYER WITH IMPROVED SURFACE HOMOGENEITY

Wolfram Fliegel; Christoph Klement; Christa Willnauer; Max Scheffer-Czygan; Andre´ Kleinwechter; Stefan Eichler; Berndt Weinert; Michael Ma¨der

Patent

Atlas literature

Patent

US 12,205,815 B2

GALLIUM ARSENIDE SUBSTRATE COMPRISING A SURFACE OXIDE LAYER WITH IMPROVED SURFACE HOMOGENEITY

Wolfram Fliegel, Christoph Klement, Christa Willnauer, Max Scheffer-Czygan et al.

FREIBERGER COMPOUND MATERIALS GMBH, Freiberg (DE)·Jan. 21, 2025·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 schematically shows the optical setup and optical path of an optical surface analyzer according to Candela CS₂₀ used for the ellipsometric surface …

FIG. 2

FIG. 2 shows typical ellipsometric lateral substrate maps, so-called Candela images, for different ﬁnal cleaning tech- nologies (from left to right: …

FIG. 3

FIG. 3 exemplarily illustrates the measured signal curve (“raw data”) of a circular track, wherein the curve “back- ground” describes the crystallographically …

FIG. 4

FIG. 4. The background-corrected mappings now no more show two-fold symmetry (see

FIG. 5

FIG. 5 for 25 typical ellipsometric lateral substrate maps, so-called Can- dela images, after subtraction or respectively correction of the …

FIG. 6

FIG. 6 presents typical global frequency distributions of the background-corrected phase shifts, i.e. residuals of the background-corrected mappings, for …

FIG. 7

FIG. 7 shows typical 1% percentiles of in each case 25 wafers produced according to the methods from the Com- parative Examples 1 and 2 or respectively the …

FIG. 8

FIG. 8). For wafers produced according to so far usual technology, based on a wafer or respectively substrate diameter of 150 mm as reference, defect numbers …

FIG. 9

FIG. 9). 5. Roughness Measurement For the measurement of the roughness in the context of the present invention white light interferometry was used. In white …

FIG. 10

FIG. 10. Another embodiment of the process according to the invention is provided such that step c) further comprises the 30 following steps: Subsequent to …

FIG. 11

FIG. 11. In a further embodiment of the process according to the invention in step c) subsequent to step iv) further steps according to steps i) and ii) are …

FIG. 12

FIG. 12. 30 Another aspect of the present invention is a process for producing a plurality of surface-treated gallium arsenide substrates, wherein …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 4 dependent

1
IndependentGaAsgallium oxidesarsenic oxidesgallium arsenide substrate with surface oxide layer
A gallium arsenide substrate which exhibits at least one surface having a surface oxide layer comprising gallium and B₂ arsenic oxides and which exhibits at least one surface having, according to an ellipsometric lateral substrate map-ping with an optical surface analyzer, based on a substrate diameter of 150 mm as reference, a defect number of <6000 and/or a total defect area of less than 2 cm2, wherein a defect is deﬁned as a continuous area of greater than 1000 µm2 having a deviation from the average measurement signal in ellipsometric lateral substrate mapping with an optical sur-face analyzer of at least ±0.05%.
1. 2
  Dependent← claim 1GaAsgallium arsenide substrate with surface oxide layer
  The gallium arsenide substrate according to claim 1, and having a diameter of at least 100 mm.
2. 5
  Dependent← claim 1GaAsgallium arsenide substrate with surface oxide layer
  The gallium arsenide substrate according to claim 1, wherein the at least one surface within 6 months after the production exhibits a substantially not deteriorating varia-tion of the laterally resolved background-corrected measure-ment signal in ellipsometric lateral substrate mapping with an optical surface analyzer. ∗ ∗ ∗ ∗ ∗

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

gallium arsenide substrate with surface oxide layer

arsenic oxidessurface oxide layer

gallium oxidessurface oxide layer

GaAssubstrate

Materials

Materials described outside the worked examples.

gallium arsenide

GaAs

Substrate

gallium oxides

Surface Oxide Component

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

spectroscopic ellipsometry

Spectroscopic Ellipsometry

FIG. 1 schematically shows the optical setup and optical path of an optical surface analyzer according to Candela CS₂₀ used for the ellipsometric surface …

Figure references

FIG. 1

spectroscopic ellipsometry

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
defect number based on ellipsometric lateral substrate mapping, 150 mm diameter reference	—	GaAs
total defect area based on ellipsometric lateral substrate mapping, 150 mm diameter reference	—

Cited prior art

Patents and literature cited by this patent (applicant and examiner references).

Cited patents · 15

US 4,738,935 A4,738,935 A 4/1988 Shimbo et al.
US 5,814,885 A5,814,885 A * 9/1998 Pogge................. H01L 29/0657examiner
US 6,230,720 B16,230,720 B1 5/2001 Yalamanchili et al.
US 10,460,924 B210,460,924 B2 10/2019 Fliegel et al.
US 11,170,989 B211,170,989 B2 * 11/2021 Fliegel................. G01N 21/211examiner

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GALLIUM ARSENIDE SUBSTRATE COMPRISING A SURFACE OXIDE LAYER WITH IMPROVED SURFACE HOMOGENEITY | Matter42 Literature

Cited non-patent literature · 7

Akiyama et al. English machine translation of JP 11-204471A. (Year: 1999).
Reduction of Schottky reverse leakage current using GaAs surface cleaning with UV-03 treatment. Notice of Allowance dated Aug. 11, 2022 in corresponding Chinese Application No. 2017108853504 ﬁled Feb. 12, 2014. Tanimoto T et al, “Reduction of Schottky reverse leakage current using GaAs surface cleaning with UV-03 treatment”, Japanese Journal of Applied Physics, vol. 38, Jul. 1999, pp. 3982-3985. Wolke K et al, “Marangoni Wafer Drying Avoids Disadvantages”, Solid State Technology, Pennwell Corporation, Tulsa, Ok, USA, vol. 39, Aug. 1, 1996, pp. 87-90. Allwood D A et al, Monitoring epiready semiconductor wafers, this solid ﬁlms 412, 2002, pp. 76-83. Bechtler Laurie et al., Optical surface analysis: a new technique for the inspection and metrology of optoelectronic ﬁlms and wafers, Integrated Optical Devices: Fabrication and Testing, 109, Abstract, Apr. 7, 2003, From Conference vol. 4944. Bunger Th et al, Development of a vertical gradient freeze process for low EPD GaAs substrates, Materials Science and Engineering B, 80(19), 2001, pp. 5-9. Burkeen Frank, Emerging Standardization for Sapphire substrate
Inspection, Time-to-Yield, KLA-Tencor Corporation 2008, p. 3. Flade T et al, State of the art 6" Si GaAs wafers made of conventionally grown LEC-crystals, Journal of Crystal Growth 198/199, 1999, pp. 336-342.
Govaerts, Paul et al, Box and whisker plots for graphic presentation of audiometric results of conductive hearing loss treatment, Otolaryngol Head Neck Surg 1998; 118, pp. 892-895. More´ Jorge J, Lecture Notes in Mathematics, The Levenberg- Marquardt Algorithm: Implementation and Theory, 1978, pp. 105- 116. Schoonjans F et al, Estimation of Population Percentiles, Lippincott Williams & Wilkins, Epidemiology, vol. 22, No. 5, Sep. 2011, pp. 750-751+ Appendix. Schro¨der-Oeynhausen F et al, Depth Analysis of GaAs-Oxide Layers with SIMS, e-Beam SNMS and ARXPS, Wiley, 1997, pp. 351-354. Song J S et al, Wet chemical cleaning process of GaAs substrate for ready-to-use, Journal of Crystal Growth 264, 2004, pp. 98-103. Surdu-Bob C C et al, an X-ray photoelectron spectroscopy study of the oxides of GaAs, Applied surface Science 183, 2001, pp. 126-136. Tukey John W, Exploratory Data Analysis, Addison-Wesley Series in Behavioral Science: Quantitative Methods, 1977, pp. 38-42. International Search Report dated Oct. 24, 2014 for International Application No. PCT/EP2014/52745 ﬁled Feb. 12, 2014. Technical Brochure: Optical surface Analyser Candela CS20, KLA Tencor, 2010. EP Office Action dated Jun. 30, 2016 for corresponding application No. 14705102.3. Taiwanese Office Action dated Feb. 14, 2017 for corresponding application No. 103104814. Chinese Office Action dated Mar. 24, 2017 for corresponding application No. 201480004737.9. Office Action dated Nov. 7, 2017 for corresponding Japanese application No. 2015-557415.
Seah et al., Ultrathin SiO2 on Si: III Mapping the layer thickness efficiently by XPS+, Surface and Interface Analysis, 2002, 33, pp. 960-963. European Office Action dated Oct. 31, 2018 for corresponding application No. 18156119.2 ﬁled Feb. 12, 2014. Chinese Office Action dated Mar. 19, 2019 for corresponding application No. 20148004737.9. US OfficeAction dated Jan. 13, 2020 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US Final Office Action dated Jun. 15, 2020 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. Summons Oral Proceedings dated Feb. 28, 2017 for European Application No. 14705102.3 ﬁled Nov. 17, 2016. Result of Consultation dated Sep. 8, 2017 or European Application No. 14705102.3 ﬁled Nov. 17, 2016. US Advisory Action dated Aug. 24, 2020 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US OfficeAction dated Oct. 19, 2020 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018. Chinese Office Action Dated Sep. 14, 2020 for Application No. 201710885350.4, Filed Feb. 12, 2014. US Final Office Action dated Feb. 23, 2021 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018.
Growth and characteriza- tion of 200 mm SI GaAs crystals grown by the VGF method. Stenzenberger, et al. publication entitled “Growth and characteriza- tion of 200 mm SI GaAs crystals grown by the VGF method,” J. Cryst. Growth, vol. 250, pp. 57-61 (2003). US Advisory Action dated Apr. 23, 2021 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US Final Office Action dated Mar. 5, 2018 for U.S. Appl. No. 14/767,603, ﬁled Aug. 13, 2015. US OfficeAction dated Jun. 15, 2018 for U.S.Appl. No. 14/767,603, ﬁled Aug. 13, 2015. USAdvisoryAction dated Jun. 1, 2021 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018.
Huang et al., Progress and Teaching of Semiconductor Physics, pp. 104-106, Higher Education Press, 1989. Lin al., Solid Electronic Structure, p. 61, Liaoning University Press, 2002. Chinese Office Action dated Sep. 5, 2022 for corresponding appli- cation No. 201910045917.6.

Cited non-patent literature · 7

Akiyama et al. English machine translation of JP 11-204471A. (Year: 1999).
Reduction of Schottky reverse leakage current using GaAs surface cleaning with UV-03 treatment. Notice of Allowance dated Aug. 11, 2022 in corresponding Chinese Application No. 2017108853504 ﬁled Feb. 12, 2014. Tanimoto T et al, “Reduction of Schottky reverse leakage current using GaAs surface cleaning with UV-03 treatment”, Japanese Journal of Applied Physics, vol. 38, Jul. 1999, pp. 3982-3985. Wolke K et al, “Marangoni Wafer Drying Avoids Disadvantages”, Solid State Technology, Pennwell Corporation, Tulsa, Ok, USA, vol. 39, Aug. 1, 1996, pp. 87-90. Allwood D A et al, Monitoring epiready semiconductor wafers, this solid ﬁlms 412, 2002, pp. 76-83. Bechtler Laurie et al., Optical surface analysis: a new technique for the inspection and metrology of optoelectronic ﬁlms and wafers, Integrated Optical Devices: Fabrication and Testing, 109, Abstract, Apr. 7, 2003, From Conference vol. 4944. Bunger Th et al, Development of a vertical gradient freeze process for low EPD GaAs substrates, Materials Science and Engineering B, 80(19), 2001, pp. 5-9. Burkeen Frank, Emerging Standardization for Sapphire substrate
Inspection, Time-to-Yield, KLA-Tencor Corporation 2008, p. 3. Flade T et al, State of the art 6" Si GaAs wafers made of conventionally grown LEC-crystals, Journal of Crystal Growth 198/199, 1999, pp. 336-342.
Govaerts, Paul et al, Box and whisker plots for graphic presentation of audiometric results of conductive hearing loss treatment, Otolaryngol Head Neck Surg 1998; 118, pp. 892-895. More´ Jorge J, Lecture Notes in Mathematics, The Levenberg- Marquardt Algorithm: Implementation and Theory, 1978, pp. 105- 116. Schoonjans F et al, Estimation of Population Percentiles, Lippincott Williams & Wilkins, Epidemiology, vol. 22, No. 5, Sep. 2011, pp. 750-751+ Appendix. Schro¨der-Oeynhausen F et al, Depth Analysis of GaAs-Oxide Layers with SIMS, e-Beam SNMS and ARXPS, Wiley, 1997, pp. 351-354. Song J S et al, Wet chemical cleaning process of GaAs substrate for ready-to-use, Journal of Crystal Growth 264, 2004, pp. 98-103. Surdu-Bob C C et al, an X-ray photoelectron spectroscopy study of the oxides of GaAs, Applied surface Science 183, 2001, pp. 126-136. Tukey John W, Exploratory Data Analysis, Addison-Wesley Series in Behavioral Science: Quantitative Methods, 1977, pp. 38-42. International Search Report dated Oct. 24, 2014 for International Application No. PCT/EP2014/52745 ﬁled Feb. 12, 2014. Technical Brochure: Optical surface Analyser Candela CS20, KLA Tencor, 2010. EP Office Action dated Jun. 30, 2016 for corresponding application No. 14705102.3. Taiwanese Office Action dated Feb. 14, 2017 for corresponding application No. 103104814. Chinese Office Action dated Mar. 24, 2017 for corresponding application No. 201480004737.9. Office Action dated Nov. 7, 2017 for corresponding Japanese application No. 2015-557415.
Seah et al., Ultrathin SiO2 on Si: III Mapping the layer thickness efficiently by XPS+, Surface and Interface Analysis, 2002, 33, pp. 960-963. European Office Action dated Oct. 31, 2018 for corresponding application No. 18156119.2 ﬁled Feb. 12, 2014. Chinese Office Action dated Mar. 19, 2019 for corresponding application No. 20148004737.9. US OfficeAction dated Jan. 13, 2020 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US Final Office Action dated Jun. 15, 2020 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. Summons Oral Proceedings dated Feb. 28, 2017 for European Application No. 14705102.3 ﬁled Nov. 17, 2016. Result of Consultation dated Sep. 8, 2017 or European Application No. 14705102.3 ﬁled Nov. 17, 2016. US Advisory Action dated Aug. 24, 2020 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US OfficeAction dated Oct. 19, 2020 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018. Chinese Office Action Dated Sep. 14, 2020 for Application No. 201710885350.4, Filed Feb. 12, 2014. US Final Office Action dated Feb. 23, 2021 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018.
Growth and characteriza- tion of 200 mm SI GaAs crystals grown by the VGF method. Stenzenberger, et al. publication entitled “Growth and characteriza- tion of 200 mm SI GaAs crystals grown by the VGF method,” J. Cryst. Growth, vol. 250, pp. 57-61 (2003). US Advisory Action dated Apr. 23, 2021 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US Final Office Action dated Mar. 5, 2018 for U.S. Appl. No. 14/767,603, ﬁled Aug. 13, 2015. US OfficeAction dated Jun. 15, 2018 for U.S.Appl. No. 14/767,603, ﬁled Aug. 13, 2015. USAdvisoryAction dated Jun. 1, 2021 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018.
Huang et al., Progress and Teaching of Semiconductor Physics, pp. 104-106, Higher Education Press, 1989. Lin al., Solid Electronic Structure, p. 61, Liaoning University Press, 2002. Chinese Office Action dated Sep. 5, 2022 for corresponding appli- cation No. 201910045917.6.

Cited non-patent literature · 7

Akiyama et al. English machine translation of JP 11-204471A. (Year: 1999).
Reduction of Schottky reverse leakage current using GaAs surface cleaning with UV-03 treatment. Notice of Allowance dated Aug. 11, 2022 in corresponding Chinese Application No. 2017108853504 ﬁled Feb. 12, 2014. Tanimoto T et al, “Reduction of Schottky reverse leakage current using GaAs surface cleaning with UV-03 treatment”, Japanese Journal of Applied Physics, vol. 38, Jul. 1999, pp. 3982-3985. Wolke K et al, “Marangoni Wafer Drying Avoids Disadvantages”, Solid State Technology, Pennwell Corporation, Tulsa, Ok, USA, vol. 39, Aug. 1, 1996, pp. 87-90. Allwood D A et al, Monitoring epiready semiconductor wafers, this solid ﬁlms 412, 2002, pp. 76-83. Bechtler Laurie et al., Optical surface analysis: a new technique for the inspection and metrology of optoelectronic ﬁlms and wafers, Integrated Optical Devices: Fabrication and Testing, 109, Abstract, Apr. 7, 2003, From Conference vol. 4944. Bunger Th et al, Development of a vertical gradient freeze process for low EPD GaAs substrates, Materials Science and Engineering B, 80(19), 2001, pp. 5-9. Burkeen Frank, Emerging Standardization for Sapphire substrate
Inspection, Time-to-Yield, KLA-Tencor Corporation 2008, p. 3. Flade T et al, State of the art 6" Si GaAs wafers made of conventionally grown LEC-crystals, Journal of Crystal Growth 198/199, 1999, pp. 336-342.
Govaerts, Paul et al, Box and whisker plots for graphic presentation of audiometric results of conductive hearing loss treatment, Otolaryngol Head Neck Surg 1998; 118, pp. 892-895. More´ Jorge J, Lecture Notes in Mathematics, The Levenberg- Marquardt Algorithm: Implementation and Theory, 1978, pp. 105- 116. Schoonjans F et al, Estimation of Population Percentiles, Lippincott Williams & Wilkins, Epidemiology, vol. 22, No. 5, Sep. 2011, pp. 750-751+ Appendix. Schro¨der-Oeynhausen F et al, Depth Analysis of GaAs-Oxide Layers with SIMS, e-Beam SNMS and ARXPS, Wiley, 1997, pp. 351-354. Song J S et al, Wet chemical cleaning process of GaAs substrate for ready-to-use, Journal of Crystal Growth 264, 2004, pp. 98-103. Surdu-Bob C C et al, an X-ray photoelectron spectroscopy study of the oxides of GaAs, Applied surface Science 183, 2001, pp. 126-136. Tukey John W, Exploratory Data Analysis, Addison-Wesley Series in Behavioral Science: Quantitative Methods, 1977, pp. 38-42. International Search Report dated Oct. 24, 2014 for International Application No. PCT/EP2014/52745 ﬁled Feb. 12, 2014. Technical Brochure: Optical surface Analyser Candela CS20, KLA Tencor, 2010. EP Office Action dated Jun. 30, 2016 for corresponding application No. 14705102.3. Taiwanese Office Action dated Feb. 14, 2017 for corresponding application No. 103104814. Chinese Office Action dated Mar. 24, 2017 for corresponding application No. 201480004737.9. Office Action dated Nov. 7, 2017 for corresponding Japanese application No. 2015-557415.
Seah et al., Ultrathin SiO2 on Si: III Mapping the layer thickness efficiently by XPS+, Surface and Interface Analysis, 2002, 33, pp. 960-963. European Office Action dated Oct. 31, 2018 for corresponding application No. 18156119.2 ﬁled Feb. 12, 2014. Chinese Office Action dated Mar. 19, 2019 for corresponding application No. 20148004737.9. US OfficeAction dated Jan. 13, 2020 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US Final Office Action dated Jun. 15, 2020 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. Summons Oral Proceedings dated Feb. 28, 2017 for European Application No. 14705102.3 ﬁled Nov. 17, 2016. Result of Consultation dated Sep. 8, 2017 or European Application No. 14705102.3 ﬁled Nov. 17, 2016. US Advisory Action dated Aug. 24, 2020 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US OfficeAction dated Oct. 19, 2020 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018. Chinese Office Action Dated Sep. 14, 2020 for Application No. 201710885350.4, Filed Feb. 12, 2014. US Final Office Action dated Feb. 23, 2021 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018.
Growth and characteriza- tion of 200 mm SI GaAs crystals grown by the VGF method. Stenzenberger, et al. publication entitled “Growth and characteriza- tion of 200 mm SI GaAs crystals grown by the VGF method,” J. Cryst. Growth, vol. 250, pp. 57-61 (2003). US Advisory Action dated Apr. 23, 2021 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US Final Office Action dated Mar. 5, 2018 for U.S. Appl. No. 14/767,603, ﬁled Aug. 13, 2015. US OfficeAction dated Jun. 15, 2018 for U.S.Appl. No. 14/767,603, ﬁled Aug. 13, 2015. USAdvisoryAction dated Jun. 1, 2021 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018.
Huang et al., Progress and Teaching of Semiconductor Physics, pp. 104-106, Higher Education Press, 1989. Lin al., Solid Electronic Structure, p. 61, Liaoning University Press, 2002. Chinese Office Action dated Sep. 5, 2022 for corresponding appli- cation No. 201910045917.6.

Cited non-patent literature · 7

Akiyama et al. English machine translation of JP 11-204471A. (Year: 1999).
Reduction of Schottky reverse leakage current using GaAs surface cleaning with UV-03 treatment. Notice of Allowance dated Aug. 11, 2022 in corresponding Chinese Application No. 2017108853504 ﬁled Feb. 12, 2014. Tanimoto T et al, “Reduction of Schottky reverse leakage current using GaAs surface cleaning with UV-03 treatment”, Japanese Journal of Applied Physics, vol. 38, Jul. 1999, pp. 3982-3985. Wolke K et al, “Marangoni Wafer Drying Avoids Disadvantages”, Solid State Technology, Pennwell Corporation, Tulsa, Ok, USA, vol. 39, Aug. 1, 1996, pp. 87-90. Allwood D A et al, Monitoring epiready semiconductor wafers, this solid ﬁlms 412, 2002, pp. 76-83. Bechtler Laurie et al., Optical surface analysis: a new technique for the inspection and metrology of optoelectronic ﬁlms and wafers, Integrated Optical Devices: Fabrication and Testing, 109, Abstract, Apr. 7, 2003, From Conference vol. 4944. Bunger Th et al, Development of a vertical gradient freeze process for low EPD GaAs substrates, Materials Science and Engineering B, 80(19), 2001, pp. 5-9. Burkeen Frank, Emerging Standardization for Sapphire substrate
Inspection, Time-to-Yield, KLA-Tencor Corporation 2008, p. 3. Flade T et al, State of the art 6" Si GaAs wafers made of conventionally grown LEC-crystals, Journal of Crystal Growth 198/199, 1999, pp. 336-342.
Govaerts, Paul et al, Box and whisker plots for graphic presentation of audiometric results of conductive hearing loss treatment, Otolaryngol Head Neck Surg 1998; 118, pp. 892-895. More´ Jorge J, Lecture Notes in Mathematics, The Levenberg- Marquardt Algorithm: Implementation and Theory, 1978, pp. 105- 116. Schoonjans F et al, Estimation of Population Percentiles, Lippincott Williams & Wilkins, Epidemiology, vol. 22, No. 5, Sep. 2011, pp. 750-751+ Appendix. Schro¨der-Oeynhausen F et al, Depth Analysis of GaAs-Oxide Layers with SIMS, e-Beam SNMS and ARXPS, Wiley, 1997, pp. 351-354. Song J S et al, Wet chemical cleaning process of GaAs substrate for ready-to-use, Journal of Crystal Growth 264, 2004, pp. 98-103. Surdu-Bob C C et al, an X-ray photoelectron spectroscopy study of the oxides of GaAs, Applied surface Science 183, 2001, pp. 126-136. Tukey John W, Exploratory Data Analysis, Addison-Wesley Series in Behavioral Science: Quantitative Methods, 1977, pp. 38-42. International Search Report dated Oct. 24, 2014 for International Application No. PCT/EP2014/52745 ﬁled Feb. 12, 2014. Technical Brochure: Optical surface Analyser Candela CS20, KLA Tencor, 2010. EP Office Action dated Jun. 30, 2016 for corresponding application No. 14705102.3. Taiwanese Office Action dated Feb. 14, 2017 for corresponding application No. 103104814. Chinese Office Action dated Mar. 24, 2017 for corresponding application No. 201480004737.9. Office Action dated Nov. 7, 2017 for corresponding Japanese application No. 2015-557415.
Seah et al., Ultrathin SiO2 on Si: III Mapping the layer thickness efficiently by XPS+, Surface and Interface Analysis, 2002, 33, pp. 960-963. European Office Action dated Oct. 31, 2018 for corresponding application No. 18156119.2 ﬁled Feb. 12, 2014. Chinese Office Action dated Mar. 19, 2019 for corresponding application No. 20148004737.9. US OfficeAction dated Jan. 13, 2020 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US Final Office Action dated Jun. 15, 2020 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. Summons Oral Proceedings dated Feb. 28, 2017 for European Application No. 14705102.3 ﬁled Nov. 17, 2016. Result of Consultation dated Sep. 8, 2017 or European Application No. 14705102.3 ﬁled Nov. 17, 2016. US Advisory Action dated Aug. 24, 2020 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US OfficeAction dated Oct. 19, 2020 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018. Chinese Office Action Dated Sep. 14, 2020 for Application No. 201710885350.4, Filed Feb. 12, 2014. US Final Office Action dated Feb. 23, 2021 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018.
Growth and characteriza- tion of 200 mm SI GaAs crystals grown by the VGF method. Stenzenberger, et al. publication entitled “Growth and characteriza- tion of 200 mm SI GaAs crystals grown by the VGF method,” J. Cryst. Growth, vol. 250, pp. 57-61 (2003). US Advisory Action dated Apr. 23, 2021 for U.S. Appl. No. 15/886,091, ﬁled Feb. 1, 2018. US Final Office Action dated Mar. 5, 2018 for U.S. Appl. No. 14/767,603, ﬁled Aug. 13, 2015. US OfficeAction dated Jun. 15, 2018 for U.S.Appl. No. 14/767,603, ﬁled Aug. 13, 2015. USAdvisoryAction dated Jun. 1, 2021 for U.S.Appl. No. 15/886,091, ﬁled Feb. 1, 2018.
Huang et al., Progress and Teaching of Semiconductor Physics, pp. 104-106, Higher Education Press, 1989. Lin al., Solid Electronic Structure, p. 61, Liaoning University Press, 2002. Chinese Office Action dated Sep. 5, 2022 for corresponding appli- cation No. 201910045917.6.