Patent
US 10,811,539GRAPHENE FET DEVICES, SYSTEMS, AND METHODS OF USING THE SAME FOR SEQUENCING NUCLEIC ACIDS
Pieter van ROOYEN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,811,539Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 H is an illustration of a graphene layered substrate of FIG. lA configured as a chemically-sensitive field-effect transistor having a reaction layer …
FIG. 2A is an illustration of a chemically-sensitive field-effect transistor having a graphene layered well structure, such as for a system for analysis of …
FIG. 3B is a block diagram of a circuitry component for a system for analysis of biological or chemical materials. [0078]
FIG. 4A is an illustration of a chemically-sensitive field-effect transistor of
FIG. 5 A is an illustration of the substrate of FIG. l A, having a silicon dioxide layer positioned above a graphene layered reaction zone, and utilizing a …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 9D is an illustration of an optical readout of DNA sequencing using nanomaterials. [00109]
FIG. 10 A is a block diagram of components for a system for analysis of biological or chemical materials. [00110] FIG. lO B is an illustration of an exemplary …
FIG. 11 is an illustration of various planar source and drain electrode designs, including interdigitated designs. [00112]
FIG. 12 is a cross-section of a well opening stopping on an analyte-sensitive layer. [00113]
FIG. 13 is an illustration highlighting a second analyte-sensitive layer coating the walls of a well. [00114]
FIG. 14 is an illustration of using the well walls to create 3D interdigitated electrodes. [00115]
FIG. 15 is an illustration of the well structure of
FIG. 16 is a picture showing a metal pattern in a deep trench created by photolithography. [00117]
FIG. 17 is an illustration of a top plane view of a source and drain electrodes at the bottom of a well. [00118]
FIG. 18 is an illustration of using alternating vertical metal layers to create an interdigitated type of effect to maximize the of ratio channel width to …
FIG. 19 is an illustration of the structure of
FIG. 20 is an illustration of using alternating vertical layers of metal and transistor material to create an interdigitated type of effect to maximize the …
FIG. 21 is an illustration of process steps that may be used to create the structure shown in
FIG. 22 is an illustration of how vias or chambers in the transistor channel material may be formed thus allowing for edge contact to the channel material. …
FIG. 23 is an illustration of a well that uses carbon nanotubes to create interdigitated transistors in a vertical direction. [00124] Having briefly described …
FIG. 30 is an illustration of an optical readout of DNA sequencing using nanomaterials. [00215] More particularly, in such a configuration as represented in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first non-conductive material layer positioned above the extended body of the substrate layer; a second non-conductive material layer positioned above the first non-conductive material layer; one or more electrode pairs comprising a source electrode and a drain electrode each having a planar arrangement and being in an opposed configuration to one another, one or both of the source and drain electrodes further having an impingement member, and one or both of the source and drain electrodes having a receiving member, where the impingement member is configured for being inserted within the receiving member, and the receiving member is configured for receiving the impingement member, the source and drain electrodes being separated from one another by a distance and being disposed within one or both of the first and second non-conductive material layers, the impingement member and the receiving member of the source and drain electrodes formed of concentrically curved arcs such that at least one pair of the source and drain electrodes has a curvilinear geometric configuration; a graphene layer positioned within the distance between the first and second non- conductive material layer and extending between a surface portion of the source electrode and a surface portion of the drain electrode thereby forming a channel between the source and drain electrodes; and a well structure provided at least within the second nonconductive material layer, the well structure having a chamber bounded by one or more bounding members, the bounding members configured to include the source and drain electrodes as well as the graphene layer. Currently amended
The chemically-sensitive field effect transistor according to Claim 1, wherein at least one of the first and second non-conductive material layer comprises an insulating layer. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body with a top surface and a bottom surface; a first non-conductive material layer positioned above the extended body of the substrate layer, the first insulating layer having a top surface and a bottom surface, the bottom surface of the first insulating layer contacting the top surface of the extended body of the substrate; a second non-conductive material layer positioned above the first non-conductive material layer, the second non-conductive material layer having a top surface and a bottom surface, the bottom surface of the second non-conductive material layer contacting the top surface of the first nonconductive material layer; a well structure provided in at least the second insulating layer, the well structure having a chamber, the chamber extending inwards from the top surface of the second insulating layer toward the top surface of the first insulating layer, the chamber defined by a bounding member; one or more electrode pairs comprising a source and a drain having an interdigitated configuration and being positioned proximate the second insulating layer adjoining the bounding member of the well structure, the source separated from the drain by a space, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geomet ric configuration; and a graphene layer positioned in the space between the source and drain electrodes to form a channel there between. Currently amended
The chemically-sensitive field effect transistor according to Claim 7, wherein at least one of the first and second non-conductive material layer comprises an insulating layer. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a well structure provided at least in the second insulating layer, the well structure having an opening therein, the opening defined by a bounding member; one or more electrode pairs comprising a source electrode and a drain electrode positioned within the second insulating layer proximate the bounding member, the source electrode separated from the drain electrode by a distance, the source electrode and the drain electrode having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a graphene layer positioned between the source and drain electrodes, to form a channel thereunder. Currently amended
The chemically-sensitive field effect transistor according to Claim 14, wherein the gate comprises a solution gate. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer; an opening provided in the second insulating layer, the opening defined by a side surface and a bottom surface; one or more electrode pairs comprising a source electrode and a drain electrode, the source electrode separated from the drain electrode by a distance, the source electrode and the drain electrode having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a graphene layer positioned within the distance between the source and drain electrodes, the source electrode, the graphene layer, and the drain electrode being positioned within one or both of the side surface and the bottom surface defining the opening. Currently amended
The chemically-sensitive field effect transistor according to Claim 18, wherein the gate comprises a solution gate. Original
The chemically-sensitive field effect transistor according to Claim 18, wherein the source and drain electrodes are positioned on or in the bounding member of the chamber. Original
(Withdrawn-Currently Amended) An integrated circuit for performing a sequencing reaction, the sequencing reaction involving the sequencing of strands of nucleic acids, the integrated circuit comprising: a substrate; an array of graphene field effect transistors arranged on the substrate, each of the graphene field effect transistors comprising: a primary layer forming a base layer; a secondary layer over the primary layer, the secondary layer being formed of a first nonconductive material and comprising one or more electrode pairs comprising a source and a drain formed in the first nonconductive material, the source and drain being separated from each other by a channel, the source and the drain being formed of an electrically conductive material, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a tertiary layer over the secondary layer, the tertiary layer comprising a gate formed over the channel to electrically connect the source and the drain, the gate being formed of a graphene layer, the tertiary layer further comprising a surface structure that overlaps the source and the drain in the secondary layer, the surface structure further defining a well having side walls and a bottom that extends over at least a portion of the graphene layer of the gate so as to form a reaction chamber for the performance of the sequencing reaction; wherein one or more of the graphene field effect transistors of the integrated circuit is configured for detecting a change in ion concentration by a change in current flow from the source to the drain via an activation of the graphene layer resulting from the performance of the sequencing reaction. Currently amended
The integrated circuit in accordance with claim 21, further comprising an ion sensitive layer disposed over the portion of the graphene layer at the bottom of the well, the ion sensitive layer being formed of an ion sensitive material. Withdrawn
The integrated circuit in accordance with claim 21, wherein the electrically conductive material that forms the source and/or the drain is selected from the group of electrically conductive materials that consist of: copper, damascene, aluminum, platinum, and gold. Withdrawn
The integrated circuit in accordance with claim 21, further comprising an ion selective permeable membrane positioned over the graphene layer. Withdrawn
The integrated circuit in accordance with claim 21, wherein the gate is configured as a solution gate. Withdrawn
(Withdrawn-Currently Amended) An integrated circuit for performing a sequencing reaction, the sequencing reaction involving the sequencing of strands of nucleic acids, the integrated circuit comprising: a substrate; an array of graphene field effect transistors arranged on the substrate, each of the graphene field effect transistors comprising: a primary layer forming a base layer; an intermediary layer over the primary layer, the intermediary layer being formed of a first nonconductive material and comprising one or more electrode pairs comprising a source and a drain formed in the first nonconductive material, the source and drain being separated from each other by a channel, the source and the drain being formed of an electrically conductive material, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a tertiary layer over the secondary layer, the tertiary layer comprising a gate formed over the channel to electrically connect the source and the drain, the gate being formed of a graphene layer, the tertiary layer further comprising a surface structure that overlaps the source and the drain in the secondary layer, the surface structure further defining a well having side walls and a bottom that extends over at least a portion of the graphene layer of the gate so as to form a reaction chamber for the performance of the sequencing reaction. Currently amended
The integrated circuit in accordance with claim 26, further comprising an ion sensitive layer disposed over the portion of the graphene layer at the bottom of the well, the ion sensitive layer being formed of an ion sensitive material. Withdrawn
The integrated circuit in accordance with claim 26, wherein the electrically conductive material that forms the source and/or the drain is selected from the group of electrically conductive materials that consist of: copper, damascene, aluminum, platinum, and gold. Withdrawn
The integrated circuit in accordance with claim 26, further comprising an ion selective permeable membrane positioned over the graphene layer. Withdrawn
The integrated circuit in accordance with claim 26, wherein the gate is configured as a solution gate. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
chemically-sensitive field effect transistor (multi-layered, curvilinear interdigitated electrodes, impingement/receiving member configuration)
chemically-sensitive field effect transistor (multi-layered, interdigitated curvilinear electrodes, well chamber with bounding member)
Materials described outside the worked examples.
graphene
non-conductive material/insulating layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 H is an illustration of a graphene layered substrate of FIG. lA configured as a chemically-sensitive field-effect transistor having a reaction layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.05–3 µm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,811,539Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 H is an illustration of a graphene layered substrate of FIG. lA configured as a chemically-sensitive field-effect transistor having a reaction layer …
FIG. 2A is an illustration of a chemically-sensitive field-effect transistor having a graphene layered well structure, such as for a system for analysis of …
FIG. 3B is a block diagram of a circuitry component for a system for analysis of biological or chemical materials. [0078]
FIG. 4A is an illustration of a chemically-sensitive field-effect transistor of
FIG. 5 A is an illustration of the substrate of FIG. l A, having a silicon dioxide layer positioned above a graphene layered reaction zone, and utilizing a …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 9D is an illustration of an optical readout of DNA sequencing using nanomaterials. [00109]
FIG. 10 A is a block diagram of components for a system for analysis of biological or chemical materials. [00110] FIG. lO B is an illustration of an exemplary …
FIG. 11 is an illustration of various planar source and drain electrode designs, including interdigitated designs. [00112]
FIG. 12 is a cross-section of a well opening stopping on an analyte-sensitive layer. [00113]
FIG. 13 is an illustration highlighting a second analyte-sensitive layer coating the walls of a well. [00114]
FIG. 14 is an illustration of using the well walls to create 3D interdigitated electrodes. [00115]
FIG. 15 is an illustration of the well structure of
FIG. 16 is a picture showing a metal pattern in a deep trench created by photolithography. [00117]
FIG. 17 is an illustration of a top plane view of a source and drain electrodes at the bottom of a well. [00118]
FIG. 18 is an illustration of using alternating vertical metal layers to create an interdigitated type of effect to maximize the of ratio channel width to …
FIG. 19 is an illustration of the structure of
FIG. 20 is an illustration of using alternating vertical layers of metal and transistor material to create an interdigitated type of effect to maximize the …
FIG. 21 is an illustration of process steps that may be used to create the structure shown in
FIG. 22 is an illustration of how vias or chambers in the transistor channel material may be formed thus allowing for edge contact to the channel material. …
FIG. 23 is an illustration of a well that uses carbon nanotubes to create interdigitated transistors in a vertical direction. [00124] Having briefly described …
FIG. 30 is an illustration of an optical readout of DNA sequencing using nanomaterials. [00215] More particularly, in such a configuration as represented in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first non-conductive material layer positioned above the extended body of the substrate layer; a second non-conductive material layer positioned above the first non-conductive material layer; one or more electrode pairs comprising a source electrode and a drain electrode each having a planar arrangement and being in an opposed configuration to one another, one or both of the source and drain electrodes further having an impingement member, and one or both of the source and drain electrodes having a receiving member, where the impingement member is configured for being inserted within the receiving member, and the receiving member is configured for receiving the impingement member, the source and drain electrodes being separated from one another by a distance and being disposed within one or both of the first and second non-conductive material layers, the impingement member and the receiving member of the source and drain electrodes formed of concentrically curved arcs such that at least one pair of the source and drain electrodes has a curvilinear geometric configuration; a graphene layer positioned within the distance between the first and second non- conductive material layer and extending between a surface portion of the source electrode and a surface portion of the drain electrode thereby forming a channel between the source and drain electrodes; and a well structure provided at least within the second nonconductive material layer, the well structure having a chamber bounded by one or more bounding members, the bounding members configured to include the source and drain electrodes as well as the graphene layer. Currently amended
The chemically-sensitive field effect transistor according to Claim 1, wherein at least one of the first and second non-conductive material layer comprises an insulating layer. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body with a top surface and a bottom surface; a first non-conductive material layer positioned above the extended body of the substrate layer, the first insulating layer having a top surface and a bottom surface, the bottom surface of the first insulating layer contacting the top surface of the extended body of the substrate; a second non-conductive material layer positioned above the first non-conductive material layer, the second non-conductive material layer having a top surface and a bottom surface, the bottom surface of the second non-conductive material layer contacting the top surface of the first nonconductive material layer; a well structure provided in at least the second insulating layer, the well structure having a chamber, the chamber extending inwards from the top surface of the second insulating layer toward the top surface of the first insulating layer, the chamber defined by a bounding member; one or more electrode pairs comprising a source and a drain having an interdigitated configuration and being positioned proximate the second insulating layer adjoining the bounding member of the well structure, the source separated from the drain by a space, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geomet ric configuration; and a graphene layer positioned in the space between the source and drain electrodes to form a channel there between. Currently amended
The chemically-sensitive field effect transistor according to Claim 7, wherein at least one of the first and second non-conductive material layer comprises an insulating layer. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a well structure provided at least in the second insulating layer, the well structure having an opening therein, the opening defined by a bounding member; one or more electrode pairs comprising a source electrode and a drain electrode positioned within the second insulating layer proximate the bounding member, the source electrode separated from the drain electrode by a distance, the source electrode and the drain electrode having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a graphene layer positioned between the source and drain electrodes, to form a channel thereunder. Currently amended
The chemically-sensitive field effect transistor according to Claim 14, wherein the gate comprises a solution gate. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer; an opening provided in the second insulating layer, the opening defined by a side surface and a bottom surface; one or more electrode pairs comprising a source electrode and a drain electrode, the source electrode separated from the drain electrode by a distance, the source electrode and the drain electrode having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a graphene layer positioned within the distance between the source and drain electrodes, the source electrode, the graphene layer, and the drain electrode being positioned within one or both of the side surface and the bottom surface defining the opening. Currently amended
The chemically-sensitive field effect transistor according to Claim 18, wherein the gate comprises a solution gate. Original
The chemically-sensitive field effect transistor according to Claim 18, wherein the source and drain electrodes are positioned on or in the bounding member of the chamber. Original
(Withdrawn-Currently Amended) An integrated circuit for performing a sequencing reaction, the sequencing reaction involving the sequencing of strands of nucleic acids, the integrated circuit comprising: a substrate; an array of graphene field effect transistors arranged on the substrate, each of the graphene field effect transistors comprising: a primary layer forming a base layer; a secondary layer over the primary layer, the secondary layer being formed of a first nonconductive material and comprising one or more electrode pairs comprising a source and a drain formed in the first nonconductive material, the source and drain being separated from each other by a channel, the source and the drain being formed of an electrically conductive material, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a tertiary layer over the secondary layer, the tertiary layer comprising a gate formed over the channel to electrically connect the source and the drain, the gate being formed of a graphene layer, the tertiary layer further comprising a surface structure that overlaps the source and the drain in the secondary layer, the surface structure further defining a well having side walls and a bottom that extends over at least a portion of the graphene layer of the gate so as to form a reaction chamber for the performance of the sequencing reaction; wherein one or more of the graphene field effect transistors of the integrated circuit is configured for detecting a change in ion concentration by a change in current flow from the source to the drain via an activation of the graphene layer resulting from the performance of the sequencing reaction. Currently amended
The integrated circuit in accordance with claim 21, further comprising an ion sensitive layer disposed over the portion of the graphene layer at the bottom of the well, the ion sensitive layer being formed of an ion sensitive material. Withdrawn
The integrated circuit in accordance with claim 21, wherein the electrically conductive material that forms the source and/or the drain is selected from the group of electrically conductive materials that consist of: copper, damascene, aluminum, platinum, and gold. Withdrawn
The integrated circuit in accordance with claim 21, further comprising an ion selective permeable membrane positioned over the graphene layer. Withdrawn
The integrated circuit in accordance with claim 21, wherein the gate is configured as a solution gate. Withdrawn
(Withdrawn-Currently Amended) An integrated circuit for performing a sequencing reaction, the sequencing reaction involving the sequencing of strands of nucleic acids, the integrated circuit comprising: a substrate; an array of graphene field effect transistors arranged on the substrate, each of the graphene field effect transistors comprising: a primary layer forming a base layer; an intermediary layer over the primary layer, the intermediary layer being formed of a first nonconductive material and comprising one or more electrode pairs comprising a source and a drain formed in the first nonconductive material, the source and drain being separated from each other by a channel, the source and the drain being formed of an electrically conductive material, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a tertiary layer over the secondary layer, the tertiary layer comprising a gate formed over the channel to electrically connect the source and the drain, the gate being formed of a graphene layer, the tertiary layer further comprising a surface structure that overlaps the source and the drain in the secondary layer, the surface structure further defining a well having side walls and a bottom that extends over at least a portion of the graphene layer of the gate so as to form a reaction chamber for the performance of the sequencing reaction. Currently amended
The integrated circuit in accordance with claim 26, further comprising an ion sensitive layer disposed over the portion of the graphene layer at the bottom of the well, the ion sensitive layer being formed of an ion sensitive material. Withdrawn
The integrated circuit in accordance with claim 26, wherein the electrically conductive material that forms the source and/or the drain is selected from the group of electrically conductive materials that consist of: copper, damascene, aluminum, platinum, and gold. Withdrawn
The integrated circuit in accordance with claim 26, further comprising an ion selective permeable membrane positioned over the graphene layer. Withdrawn
The integrated circuit in accordance with claim 26, wherein the gate is configured as a solution gate. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
chemically-sensitive field effect transistor (multi-layered, curvilinear interdigitated electrodes, impingement/receiving member configuration)
chemically-sensitive field effect transistor (multi-layered, interdigitated curvilinear electrodes, well chamber with bounding member)
Materials described outside the worked examples.
graphene
non-conductive material/insulating layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 H is an illustration of a graphene layered substrate of FIG. lA configured as a chemically-sensitive field-effect transistor having a reaction layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.05–3 µm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,811,539Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 H is an illustration of a graphene layered substrate of FIG. lA configured as a chemically-sensitive field-effect transistor having a reaction layer …
FIG. 2A is an illustration of a chemically-sensitive field-effect transistor having a graphene layered well structure, such as for a system for analysis of …
FIG. 3B is a block diagram of a circuitry component for a system for analysis of biological or chemical materials. [0078]
FIG. 4A is an illustration of a chemically-sensitive field-effect transistor of
FIG. 5 A is an illustration of the substrate of FIG. l A, having a silicon dioxide layer positioned above a graphene layered reaction zone, and utilizing a …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 9D is an illustration of an optical readout of DNA sequencing using nanomaterials. [00109]
FIG. 10 A is a block diagram of components for a system for analysis of biological or chemical materials. [00110] FIG. lO B is an illustration of an exemplary …
FIG. 11 is an illustration of various planar source and drain electrode designs, including interdigitated designs. [00112]
FIG. 12 is a cross-section of a well opening stopping on an analyte-sensitive layer. [00113]
FIG. 13 is an illustration highlighting a second analyte-sensitive layer coating the walls of a well. [00114]
FIG. 14 is an illustration of using the well walls to create 3D interdigitated electrodes. [00115]
FIG. 15 is an illustration of the well structure of
FIG. 16 is a picture showing a metal pattern in a deep trench created by photolithography. [00117]
FIG. 17 is an illustration of a top plane view of a source and drain electrodes at the bottom of a well. [00118]
FIG. 18 is an illustration of using alternating vertical metal layers to create an interdigitated type of effect to maximize the of ratio channel width to …
FIG. 19 is an illustration of the structure of
FIG. 20 is an illustration of using alternating vertical layers of metal and transistor material to create an interdigitated type of effect to maximize the …
FIG. 21 is an illustration of process steps that may be used to create the structure shown in
FIG. 22 is an illustration of how vias or chambers in the transistor channel material may be formed thus allowing for edge contact to the channel material. …
FIG. 23 is an illustration of a well that uses carbon nanotubes to create interdigitated transistors in a vertical direction. [00124] Having briefly described …
FIG. 30 is an illustration of an optical readout of DNA sequencing using nanomaterials. [00215] More particularly, in such a configuration as represented in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first non-conductive material layer positioned above the extended body of the substrate layer; a second non-conductive material layer positioned above the first non-conductive material layer; one or more electrode pairs comprising a source electrode and a drain electrode each having a planar arrangement and being in an opposed configuration to one another, one or both of the source and drain electrodes further having an impingement member, and one or both of the source and drain electrodes having a receiving member, where the impingement member is configured for being inserted within the receiving member, and the receiving member is configured for receiving the impingement member, the source and drain electrodes being separated from one another by a distance and being disposed within one or both of the first and second non-conductive material layers, the impingement member and the receiving member of the source and drain electrodes formed of concentrically curved arcs such that at least one pair of the source and drain electrodes has a curvilinear geometric configuration; a graphene layer positioned within the distance between the first and second non- conductive material layer and extending between a surface portion of the source electrode and a surface portion of the drain electrode thereby forming a channel between the source and drain electrodes; and a well structure provided at least within the second nonconductive material layer, the well structure having a chamber bounded by one or more bounding members, the bounding members configured to include the source and drain electrodes as well as the graphene layer. Currently amended
The chemically-sensitive field effect transistor according to Claim 1, wherein at least one of the first and second non-conductive material layer comprises an insulating layer. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body with a top surface and a bottom surface; a first non-conductive material layer positioned above the extended body of the substrate layer, the first insulating layer having a top surface and a bottom surface, the bottom surface of the first insulating layer contacting the top surface of the extended body of the substrate; a second non-conductive material layer positioned above the first non-conductive material layer, the second non-conductive material layer having a top surface and a bottom surface, the bottom surface of the second non-conductive material layer contacting the top surface of the first nonconductive material layer; a well structure provided in at least the second insulating layer, the well structure having a chamber, the chamber extending inwards from the top surface of the second insulating layer toward the top surface of the first insulating layer, the chamber defined by a bounding member; one or more electrode pairs comprising a source and a drain having an interdigitated configuration and being positioned proximate the second insulating layer adjoining the bounding member of the well structure, the source separated from the drain by a space, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geomet ric configuration; and a graphene layer positioned in the space between the source and drain electrodes to form a channel there between. Currently amended
The chemically-sensitive field effect transistor according to Claim 7, wherein at least one of the first and second non-conductive material layer comprises an insulating layer. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a well structure provided at least in the second insulating layer, the well structure having an opening therein, the opening defined by a bounding member; one or more electrode pairs comprising a source electrode and a drain electrode positioned within the second insulating layer proximate the bounding member, the source electrode separated from the drain electrode by a distance, the source electrode and the drain electrode having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a graphene layer positioned between the source and drain electrodes, to form a channel thereunder. Currently amended
The chemically-sensitive field effect transistor according to Claim 14, wherein the gate comprises a solution gate. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer; an opening provided in the second insulating layer, the opening defined by a side surface and a bottom surface; one or more electrode pairs comprising a source electrode and a drain electrode, the source electrode separated from the drain electrode by a distance, the source electrode and the drain electrode having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a graphene layer positioned within the distance between the source and drain electrodes, the source electrode, the graphene layer, and the drain electrode being positioned within one or both of the side surface and the bottom surface defining the opening. Currently amended
The chemically-sensitive field effect transistor according to Claim 18, wherein the gate comprises a solution gate. Original
The chemically-sensitive field effect transistor according to Claim 18, wherein the source and drain electrodes are positioned on or in the bounding member of the chamber. Original
(Withdrawn-Currently Amended) An integrated circuit for performing a sequencing reaction, the sequencing reaction involving the sequencing of strands of nucleic acids, the integrated circuit comprising: a substrate; an array of graphene field effect transistors arranged on the substrate, each of the graphene field effect transistors comprising: a primary layer forming a base layer; a secondary layer over the primary layer, the secondary layer being formed of a first nonconductive material and comprising one or more electrode pairs comprising a source and a drain formed in the first nonconductive material, the source and drain being separated from each other by a channel, the source and the drain being formed of an electrically conductive material, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a tertiary layer over the secondary layer, the tertiary layer comprising a gate formed over the channel to electrically connect the source and the drain, the gate being formed of a graphene layer, the tertiary layer further comprising a surface structure that overlaps the source and the drain in the secondary layer, the surface structure further defining a well having side walls and a bottom that extends over at least a portion of the graphene layer of the gate so as to form a reaction chamber for the performance of the sequencing reaction; wherein one or more of the graphene field effect transistors of the integrated circuit is configured for detecting a change in ion concentration by a change in current flow from the source to the drain via an activation of the graphene layer resulting from the performance of the sequencing reaction. Currently amended
The integrated circuit in accordance with claim 21, further comprising an ion sensitive layer disposed over the portion of the graphene layer at the bottom of the well, the ion sensitive layer being formed of an ion sensitive material. Withdrawn
The integrated circuit in accordance with claim 21, wherein the electrically conductive material that forms the source and/or the drain is selected from the group of electrically conductive materials that consist of: copper, damascene, aluminum, platinum, and gold. Withdrawn
The integrated circuit in accordance with claim 21, further comprising an ion selective permeable membrane positioned over the graphene layer. Withdrawn
The integrated circuit in accordance with claim 21, wherein the gate is configured as a solution gate. Withdrawn
(Withdrawn-Currently Amended) An integrated circuit for performing a sequencing reaction, the sequencing reaction involving the sequencing of strands of nucleic acids, the integrated circuit comprising: a substrate; an array of graphene field effect transistors arranged on the substrate, each of the graphene field effect transistors comprising: a primary layer forming a base layer; an intermediary layer over the primary layer, the intermediary layer being formed of a first nonconductive material and comprising one or more electrode pairs comprising a source and a drain formed in the first nonconductive material, the source and drain being separated from each other by a channel, the source and the drain being formed of an electrically conductive material, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a tertiary layer over the secondary layer, the tertiary layer comprising a gate formed over the channel to electrically connect the source and the drain, the gate being formed of a graphene layer, the tertiary layer further comprising a surface structure that overlaps the source and the drain in the secondary layer, the surface structure further defining a well having side walls and a bottom that extends over at least a portion of the graphene layer of the gate so as to form a reaction chamber for the performance of the sequencing reaction. Currently amended
The integrated circuit in accordance with claim 26, further comprising an ion sensitive layer disposed over the portion of the graphene layer at the bottom of the well, the ion sensitive layer being formed of an ion sensitive material. Withdrawn
The integrated circuit in accordance with claim 26, wherein the electrically conductive material that forms the source and/or the drain is selected from the group of electrically conductive materials that consist of: copper, damascene, aluminum, platinum, and gold. Withdrawn
The integrated circuit in accordance with claim 26, further comprising an ion selective permeable membrane positioned over the graphene layer. Withdrawn
The integrated circuit in accordance with claim 26, wherein the gate is configured as a solution gate. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
chemically-sensitive field effect transistor (multi-layered, curvilinear interdigitated electrodes, impingement/receiving member configuration)
chemically-sensitive field effect transistor (multi-layered, interdigitated curvilinear electrodes, well chamber with bounding member)
Materials described outside the worked examples.
graphene
non-conductive material/insulating layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 H is an illustration of a graphene layered substrate of FIG. lA configured as a chemically-sensitive field-effect transistor having a reaction layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.05–3 µm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,811,539Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 H is an illustration of a graphene layered substrate of FIG. lA configured as a chemically-sensitive field-effect transistor having a reaction layer …
FIG. 2A is an illustration of a chemically-sensitive field-effect transistor having a graphene layered well structure, such as for a system for analysis of …
FIG. 3B is a block diagram of a circuitry component for a system for analysis of biological or chemical materials. [0078]
FIG. 4A is an illustration of a chemically-sensitive field-effect transistor of
FIG. 5 A is an illustration of the substrate of FIG. l A, having a silicon dioxide layer positioned above a graphene layered reaction zone, and utilizing a …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 9D is an illustration of an optical readout of DNA sequencing using nanomaterials. [00109]
FIG. 10 A is a block diagram of components for a system for analysis of biological or chemical materials. [00110] FIG. lO B is an illustration of an exemplary …
FIG. 11 is an illustration of various planar source and drain electrode designs, including interdigitated designs. [00112]
FIG. 12 is a cross-section of a well opening stopping on an analyte-sensitive layer. [00113]
FIG. 13 is an illustration highlighting a second analyte-sensitive layer coating the walls of a well. [00114]
FIG. 14 is an illustration of using the well walls to create 3D interdigitated electrodes. [00115]
FIG. 15 is an illustration of the well structure of
FIG. 16 is a picture showing a metal pattern in a deep trench created by photolithography. [00117]
FIG. 17 is an illustration of a top plane view of a source and drain electrodes at the bottom of a well. [00118]
FIG. 18 is an illustration of using alternating vertical metal layers to create an interdigitated type of effect to maximize the of ratio channel width to …
FIG. 19 is an illustration of the structure of
FIG. 20 is an illustration of using alternating vertical layers of metal and transistor material to create an interdigitated type of effect to maximize the …
FIG. 21 is an illustration of process steps that may be used to create the structure shown in
FIG. 22 is an illustration of how vias or chambers in the transistor channel material may be formed thus allowing for edge contact to the channel material. …
FIG. 23 is an illustration of a well that uses carbon nanotubes to create interdigitated transistors in a vertical direction. [00124] Having briefly described …
FIG. 30 is an illustration of an optical readout of DNA sequencing using nanomaterials. [00215] More particularly, in such a configuration as represented in the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first non-conductive material layer positioned above the extended body of the substrate layer; a second non-conductive material layer positioned above the first non-conductive material layer; one or more electrode pairs comprising a source electrode and a drain electrode each having a planar arrangement and being in an opposed configuration to one another, one or both of the source and drain electrodes further having an impingement member, and one or both of the source and drain electrodes having a receiving member, where the impingement member is configured for being inserted within the receiving member, and the receiving member is configured for receiving the impingement member, the source and drain electrodes being separated from one another by a distance and being disposed within one or both of the first and second non-conductive material layers, the impingement member and the receiving member of the source and drain electrodes formed of concentrically curved arcs such that at least one pair of the source and drain electrodes has a curvilinear geometric configuration; a graphene layer positioned within the distance between the first and second non- conductive material layer and extending between a surface portion of the source electrode and a surface portion of the drain electrode thereby forming a channel between the source and drain electrodes; and a well structure provided at least within the second nonconductive material layer, the well structure having a chamber bounded by one or more bounding members, the bounding members configured to include the source and drain electrodes as well as the graphene layer. Currently amended
The chemically-sensitive field effect transistor according to Claim 1, wherein at least one of the first and second non-conductive material layer comprises an insulating layer. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body with a top surface and a bottom surface; a first non-conductive material layer positioned above the extended body of the substrate layer, the first insulating layer having a top surface and a bottom surface, the bottom surface of the first insulating layer contacting the top surface of the extended body of the substrate; a second non-conductive material layer positioned above the first non-conductive material layer, the second non-conductive material layer having a top surface and a bottom surface, the bottom surface of the second non-conductive material layer contacting the top surface of the first nonconductive material layer; a well structure provided in at least the second insulating layer, the well structure having a chamber, the chamber extending inwards from the top surface of the second insulating layer toward the top surface of the first insulating layer, the chamber defined by a bounding member; one or more electrode pairs comprising a source and a drain having an interdigitated configuration and being positioned proximate the second insulating layer adjoining the bounding member of the well structure, the source separated from the drain by a space, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geomet ric configuration; and a graphene layer positioned in the space between the source and drain electrodes to form a channel there between. Currently amended
The chemically-sensitive field effect transistor according to Claim 7, wherein at least one of the first and second non-conductive material layer comprises an insulating layer. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes; a well structure provided at least in the second insulating layer, the well structure having an opening therein, the opening defined by a bounding member; one or more electrode pairs comprising a source electrode and a drain electrode positioned within the second insulating layer proximate the bounding member, the source electrode separated from the drain electrode by a distance, the source electrode and the drain electrode having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a graphene layer positioned between the source and drain electrodes, to form a channel thereunder. Currently amended
The chemically-sensitive field effect transistor according to Claim 14, wherein the gate comprises a solution gate. Original
A chemically-sensitive field effect transistor having a multi-layered structure, comprising: a substrate layer, the substrate layer having an extended body; a first insulating layer positioned above the extended body of the substrate layer; a second insulating layer positioned above the first insulating layer; an opening provided in the second insulating layer, the opening defined by a side surface and a bottom surface; one or more electrode pairs comprising a source electrode and a drain electrode, the source electrode separated from the drain electrode by a distance, the source electrode and the drain electrode having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a graphene layer positioned within the distance between the source and drain electrodes, the source electrode, the graphene layer, and the drain electrode being positioned within one or both of the side surface and the bottom surface defining the opening. Currently amended
The chemically-sensitive field effect transistor according to Claim 18, wherein the gate comprises a solution gate. Original
The chemically-sensitive field effect transistor according to Claim 18, wherein the source and drain electrodes are positioned on or in the bounding member of the chamber. Original
(Withdrawn-Currently Amended) An integrated circuit for performing a sequencing reaction, the sequencing reaction involving the sequencing of strands of nucleic acids, the integrated circuit comprising: a substrate; an array of graphene field effect transistors arranged on the substrate, each of the graphene field effect transistors comprising: a primary layer forming a base layer; a secondary layer over the primary layer, the secondary layer being formed of a first nonconductive material and comprising one or more electrode pairs comprising a source and a drain formed in the first nonconductive material, the source and drain being separated from each other by a channel, the source and the drain being formed of an electrically conductive material, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a tertiary layer over the secondary layer, the tertiary layer comprising a gate formed over the channel to electrically connect the source and the drain, the gate being formed of a graphene layer, the tertiary layer further comprising a surface structure that overlaps the source and the drain in the secondary layer, the surface structure further defining a well having side walls and a bottom that extends over at least a portion of the graphene layer of the gate so as to form a reaction chamber for the performance of the sequencing reaction; wherein one or more of the graphene field effect transistors of the integrated circuit is configured for detecting a change in ion concentration by a change in current flow from the source to the drain via an activation of the graphene layer resulting from the performance of the sequencing reaction. Currently amended
The integrated circuit in accordance with claim 21, further comprising an ion sensitive layer disposed over the portion of the graphene layer at the bottom of the well, the ion sensitive layer being formed of an ion sensitive material. Withdrawn
The integrated circuit in accordance with claim 21, wherein the electrically conductive material that forms the source and/or the drain is selected from the group of electrically conductive materials that consist of: copper, damascene, aluminum, platinum, and gold. Withdrawn
The integrated circuit in accordance with claim 21, further comprising an ion selective permeable membrane positioned over the graphene layer. Withdrawn
The integrated circuit in accordance with claim 21, wherein the gate is configured as a solution gate. Withdrawn
(Withdrawn-Currently Amended) An integrated circuit for performing a sequencing reaction, the sequencing reaction involving the sequencing of strands of nucleic acids, the integrated circuit comprising: a substrate; an array of graphene field effect transistors arranged on the substrate, each of the graphene field effect transistors comprising: a primary layer forming a base layer; an intermediary layer over the primary layer, the intermediary layer being formed of a first nonconductive material and comprising one or more electrode pairs comprising a source and a drain formed in the first nonconductive material, the source and drain being separated from each other by a channel, the source and the drain being formed of an electrically conductive material, the source and drain having a planar arrangement opposed to one another and formed on concentrically curved arcs such that at least one pair of the source and drain electrode pairs has a curvilinear geometric configuration; and a tertiary layer over the secondary layer, the tertiary layer comprising a gate formed over the channel to electrically connect the source and the drain, the gate being formed of a graphene layer, the tertiary layer further comprising a surface structure that overlaps the source and the drain in the secondary layer, the surface structure further defining a well having side walls and a bottom that extends over at least a portion of the graphene layer of the gate so as to form a reaction chamber for the performance of the sequencing reaction. Currently amended
The integrated circuit in accordance with claim 26, further comprising an ion sensitive layer disposed over the portion of the graphene layer at the bottom of the well, the ion sensitive layer being formed of an ion sensitive material. Withdrawn
The integrated circuit in accordance with claim 26, wherein the electrically conductive material that forms the source and/or the drain is selected from the group of electrically conductive materials that consist of: copper, damascene, aluminum, platinum, and gold. Withdrawn
The integrated circuit in accordance with claim 26, further comprising an ion selective permeable membrane positioned over the graphene layer. Withdrawn
The integrated circuit in accordance with claim 26, wherein the gate is configured as a solution gate. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
chemically-sensitive field effect transistor (multi-layered, curvilinear interdigitated electrodes, impingement/receiving member configuration)
chemically-sensitive field effect transistor (multi-layered, interdigitated curvilinear electrodes, well chamber with bounding member)
Materials described outside the worked examples.
graphene
non-conductive material/insulating layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 H is an illustration of a graphene layered substrate of FIG. lA configured as a chemically-sensitive field-effect transistor having a reaction layer …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 0.05–3 µm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
chemically-sensitive field effect transistor (multi-layered, curvilinear electrodes, well opening in second insulating layer)
chemically-sensitive field effect transistor (multi-layered, curvilinear electrodes, opening in second insulating layer with side and bottom surface)
integrated circuit for nucleic acid sequencing with array of graphene FETs (three-layer: primary/secondary/tertiary, reaction well, solution gate)
integrated circuit for nucleic acid sequencing with array of graphene FETs (three-layer: primary/intermediary/tertiary, reaction well)
insulating layer
ion sensitive material
electrically conductive electrode material (copper, damascene, aluminum, platinum, gold)
FIG. 2A is an illustration of a chemically-sensitive field-effect transistor having a graphene layered well structure, such as for a system for analysis of …
FIG. 4A is an illustration of a chemically-sensitive field-effect transistor of
FIG. 5 A is an illustration of the substrate of FIG. l A, having a silicon dioxide layer positioned above a graphene layered reaction zone, and utilizing a …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 10 A is a block diagram of components for a system for analysis of biological or chemical materials. [00110] FIG. lO B is an illustration of an exemplary …
FIG. 14 is an illustration of using the well walls to create 3D interdigitated electrodes. [00115]
FIG. 18 is an illustration of using alternating vertical metal layers to create an interdigitated type of effect to maximize the of ratio channel width to …
FIG. 20 is an illustration of using alternating vertical layers of metal and transistor material to create an interdigitated type of effect to maximize the …
FIG. 22 is an illustration of how vias or chambers in the transistor channel material may be formed thus allowing for edge contact to the channel material. …
FIG. 23 is an illustration of a well that uses carbon nanotubes to create interdigitated transistors in a vertical direction. [00124] Having briefly described …
FIG. 30 is an illustration of an optical readout of DNA sequencing using nanomaterials. [00215] More particularly, in such a configuration as represented in the …
| 0.5–2 µm |
| — |
Thickness | 0.1–2 µm | — |
Thickness | 0.001–10 µm | — |
Thickness | 0.01–5 µm | — |
Thickness | 1–10 µm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 50 nm | — |
Voltage | ≤ 10 V | — |
Voltage | ≤ 8 V | — |
Voltage | ≤ 6 V | — |
Voltage | ≤ 4 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | 75–100 nm | — |
Thickness | 0–25 nm | — |
chemically-sensitive field effect transistor (multi-layered, curvilinear electrodes, well opening in second insulating layer)
chemically-sensitive field effect transistor (multi-layered, curvilinear electrodes, opening in second insulating layer with side and bottom surface)
integrated circuit for nucleic acid sequencing with array of graphene FETs (three-layer: primary/secondary/tertiary, reaction well, solution gate)
integrated circuit for nucleic acid sequencing with array of graphene FETs (three-layer: primary/intermediary/tertiary, reaction well)
insulating layer
ion sensitive material
electrically conductive electrode material (copper, damascene, aluminum, platinum, gold)
FIG. 2A is an illustration of a chemically-sensitive field-effect transistor having a graphene layered well structure, such as for a system for analysis of …
FIG. 4A is an illustration of a chemically-sensitive field-effect transistor of
FIG. 5 A is an illustration of the substrate of FIG. l A, having a silicon dioxide layer positioned above a graphene layered reaction zone, and utilizing a …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 10 A is a block diagram of components for a system for analysis of biological or chemical materials. [00110] FIG. lO B is an illustration of an exemplary …
FIG. 14 is an illustration of using the well walls to create 3D interdigitated electrodes. [00115]
FIG. 18 is an illustration of using alternating vertical metal layers to create an interdigitated type of effect to maximize the of ratio channel width to …
FIG. 20 is an illustration of using alternating vertical layers of metal and transistor material to create an interdigitated type of effect to maximize the …
FIG. 22 is an illustration of how vias or chambers in the transistor channel material may be formed thus allowing for edge contact to the channel material. …
FIG. 23 is an illustration of a well that uses carbon nanotubes to create interdigitated transistors in a vertical direction. [00124] Having briefly described …
FIG. 30 is an illustration of an optical readout of DNA sequencing using nanomaterials. [00215] More particularly, in such a configuration as represented in the …
| 0.5–2 µm |
| — |
Thickness | 0.1–2 µm | — |
Thickness | 0.001–10 µm | — |
Thickness | 0.01–5 µm | — |
Thickness | 1–10 µm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 50 nm | — |
Voltage | ≤ 10 V | — |
Voltage | ≤ 8 V | — |
Voltage | ≤ 6 V | — |
Voltage | ≤ 4 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | 75–100 nm | — |
Thickness | 0–25 nm | — |
chemically-sensitive field effect transistor (multi-layered, curvilinear electrodes, well opening in second insulating layer)
chemically-sensitive field effect transistor (multi-layered, curvilinear electrodes, opening in second insulating layer with side and bottom surface)
integrated circuit for nucleic acid sequencing with array of graphene FETs (three-layer: primary/secondary/tertiary, reaction well, solution gate)
integrated circuit for nucleic acid sequencing with array of graphene FETs (three-layer: primary/intermediary/tertiary, reaction well)
insulating layer
ion sensitive material
electrically conductive electrode material (copper, damascene, aluminum, platinum, gold)
FIG. 2A is an illustration of a chemically-sensitive field-effect transistor having a graphene layered well structure, such as for a system for analysis of …
FIG. 4A is an illustration of a chemically-sensitive field-effect transistor of
FIG. 5 A is an illustration of the substrate of FIG. l A, having a silicon dioxide layer positioned above a graphene layered reaction zone, and utilizing a …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 10 A is a block diagram of components for a system for analysis of biological or chemical materials. [00110] FIG. lO B is an illustration of an exemplary …
FIG. 14 is an illustration of using the well walls to create 3D interdigitated electrodes. [00115]
FIG. 18 is an illustration of using alternating vertical metal layers to create an interdigitated type of effect to maximize the of ratio channel width to …
FIG. 20 is an illustration of using alternating vertical layers of metal and transistor material to create an interdigitated type of effect to maximize the …
FIG. 22 is an illustration of how vias or chambers in the transistor channel material may be formed thus allowing for edge contact to the channel material. …
FIG. 23 is an illustration of a well that uses carbon nanotubes to create interdigitated transistors in a vertical direction. [00124] Having briefly described …
FIG. 30 is an illustration of an optical readout of DNA sequencing using nanomaterials. [00215] More particularly, in such a configuration as represented in the …
| 0.5–2 µm |
| — |
Thickness | 0.1–2 µm | — |
Thickness | 0.001–10 µm | — |
Thickness | 0.01–5 µm | — |
Thickness | 1–10 µm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 50 nm | — |
Voltage | ≤ 10 V | — |
Voltage | ≤ 8 V | — |
Voltage | ≤ 6 V | — |
Voltage | ≤ 4 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | 75–100 nm | — |
Thickness | 0–25 nm | — |
chemically-sensitive field effect transistor (multi-layered, curvilinear electrodes, well opening in second insulating layer)
chemically-sensitive field effect transistor (multi-layered, curvilinear electrodes, opening in second insulating layer with side and bottom surface)
integrated circuit for nucleic acid sequencing with array of graphene FETs (three-layer: primary/secondary/tertiary, reaction well, solution gate)
integrated circuit for nucleic acid sequencing with array of graphene FETs (three-layer: primary/intermediary/tertiary, reaction well)
insulating layer
ion sensitive material
electrically conductive electrode material (copper, damascene, aluminum, platinum, gold)
FIG. 2A is an illustration of a chemically-sensitive field-effect transistor having a graphene layered well structure, such as for a system for analysis of …
FIG. 4A is an illustration of a chemically-sensitive field-effect transistor of
FIG. 5 A is an illustration of the substrate of FIG. l A, having a silicon dioxide layer positioned above a graphene layered reaction zone, and utilizing a …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 6 I is a graph of an I-Vg curve illustrating a check-slope of the I-Vg curve on one or both sides (Gm & proportional to mobility),and use of a solution …
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 7E is a graph of frequency vs. normalized power spectral density for a graphene FET of the present invention. [00101]
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 8A is an illustration of a chemically-sensitive field-effect transistor with a graphene layered well structure and having a permeable membrane associated …
FIG. 10 A is a block diagram of components for a system for analysis of biological or chemical materials. [00110] FIG. lO B is an illustration of an exemplary …
FIG. 14 is an illustration of using the well walls to create 3D interdigitated electrodes. [00115]
FIG. 18 is an illustration of using alternating vertical metal layers to create an interdigitated type of effect to maximize the of ratio channel width to …
FIG. 20 is an illustration of using alternating vertical layers of metal and transistor material to create an interdigitated type of effect to maximize the …
FIG. 22 is an illustration of how vias or chambers in the transistor channel material may be formed thus allowing for edge contact to the channel material. …
FIG. 23 is an illustration of a well that uses carbon nanotubes to create interdigitated transistors in a vertical direction. [00124] Having briefly described …
FIG. 30 is an illustration of an optical readout of DNA sequencing using nanomaterials. [00215] More particularly, in such a configuration as represented in the …
| 0.5–2 µm |
| — |
Thickness | 0.1–2 µm | — |
Thickness | 0.001–10 µm | — |
Thickness | 0.01–5 µm | — |
Thickness | 1–10 µm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 50 nm | — |
Voltage | ≤ 10 V | — |
Voltage | ≤ 8 V | — |
Voltage | ≤ 6 V | — |
Voltage | ≤ 4 V | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | 75–100 nm | — |
Thickness | 0–25 nm | — |