Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed PLHot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe₂Joonsoo Kim, Hong-Guk Min, Sehwan Park, Jin Cheol Park et al.2026·arXiv:2606.01125AbstractCarrier multiplication (CM), the process of generating multiple charge carriers from a single photon, offers an opportunity to exceed the Shockley-Queisser limit in photovoltaic applications. Despite extensive research, no material has yet achieved ideal CM efficiency, primarily owing to significant energy losses from carrier-lattice scattering. In this study, monolayer MoSe₂ is shown to attain the theoretical maximum CM efficiency permitted by energy-momentum conservation using ultrafast transient absorption spectroscopy. First-principles calculations are used to identify abundant CM pathways enabled by 2Eg band nesting, while femtosecond spatiotemporal spectroscopy reveals exceptional hot-carrier diffusion in the monolayer relative to bulk MoSe2.Read more
Atomically thin monolayer 2H-MoSe₂ synthesized by chemical vapor deposition and characterized optically and by ultrafast spectroscopy.1 preparation3 characterizations5 properties5 figuresExperimentalMoSe₂Studied MaterialExpand
Bulk MoSe₂ used as a comparison reference in optical and hot-carrier diffusion measurements.1 characterization1 property4 figuresExperimentalMoSe₂Reference MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed PLHot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe₂Joonsoo Kim, Hong-Guk Min, Sehwan Park, Jin Cheol Park et al.2026·arXiv:2606.01125AbstractCarrier multiplication (CM), the process of generating multiple charge carriers from a single photon, offers an opportunity to exceed the Shockley-Queisser limit in photovoltaic applications. Despite extensive research, no material has yet achieved ideal CM efficiency, primarily owing to significant energy losses from carrier-lattice scattering. In this study, monolayer MoSe₂ is shown to attain the theoretical maximum CM efficiency permitted by energy-momentum conservation using ultrafast transient absorption spectroscopy. First-principles calculations are used to identify abundant CM pathways enabled by 2Eg band nesting, while femtosecond spatiotemporal spectroscopy reveals exceptional hot-carrier diffusion in the monolayer relative to bulk MoSe2.Read more
Atomically thin monolayer 2H-MoSe₂ synthesized by chemical vapor deposition and characterized optically and by ultrafast spectroscopy.1 preparation3 characterizations5 properties5 figuresExperimentalMoSe₂Studied MaterialExpand
Bulk MoSe₂ used as a comparison reference in optical and hot-carrier diffusion measurements.1 characterization1 property4 figuresExperimentalMoSe₂Reference MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed PLHot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe₂Joonsoo Kim, Hong-Guk Min, Sehwan Park, Jin Cheol Park et al.2026·arXiv:2606.01125AbstractCarrier multiplication (CM), the process of generating multiple charge carriers from a single photon, offers an opportunity to exceed the Shockley-Queisser limit in photovoltaic applications. Despite extensive research, no material has yet achieved ideal CM efficiency, primarily owing to significant energy losses from carrier-lattice scattering. In this study, monolayer MoSe₂ is shown to attain the theoretical maximum CM efficiency permitted by energy-momentum conservation using ultrafast transient absorption spectroscopy. First-principles calculations are used to identify abundant CM pathways enabled by 2Eg band nesting, while femtosecond spatiotemporal spectroscopy reveals exceptional hot-carrier diffusion in the monolayer relative to bulk MoSe2.Read more
Atomically thin monolayer 2H-MoSe₂ synthesized by chemical vapor deposition and characterized optically and by ultrafast spectroscopy.1 preparation3 characterizations5 properties5 figuresExperimentalMoSe₂Studied MaterialExpand
Bulk MoSe₂ used as a comparison reference in optical and hot-carrier diffusion measurements.1 characterization1 property4 figuresExperimentalMoSe₂Reference MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTComputed PLHot carrier diffusion-assisted ideal carrier multiplication in monolayer MoSe₂Joonsoo Kim, Hong-Guk Min, Sehwan Park, Jin Cheol Park et al.2026·arXiv:2606.01125AbstractCarrier multiplication (CM), the process of generating multiple charge carriers from a single photon, offers an opportunity to exceed the Shockley-Queisser limit in photovoltaic applications. Despite extensive research, no material has yet achieved ideal CM efficiency, primarily owing to significant energy losses from carrier-lattice scattering. In this study, monolayer MoSe₂ is shown to attain the theoretical maximum CM efficiency permitted by energy-momentum conservation using ultrafast transient absorption spectroscopy. First-principles calculations are used to identify abundant CM pathways enabled by 2Eg band nesting, while femtosecond spatiotemporal spectroscopy reveals exceptional hot-carrier diffusion in the monolayer relative to bulk MoSe2.Read more
Atomically thin monolayer 2H-MoSe₂ synthesized by chemical vapor deposition and characterized optically and by ultrafast spectroscopy.1 preparation3 characterizations5 properties5 figuresExperimentalMoSe₂Studied MaterialExpand
Bulk MoSe₂ used as a comparison reference in optical and hot-carrier diffusion measurements.1 characterization1 property4 figuresExperimentalMoSe₂Reference MaterialExpand