Patent
US 9,356,101POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR CRYSTAL GROWTH OF GaN-BASE SEMICONDUCTOR AND METHOD FOR MANUFACTURING GaN-BASE SEMICONDUCTOR USING THE SAME
Hiroshi Komorita
US
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Patent
Atlas literature
Patent
US 9,356,101Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Pre vi ously Presented) A po ly rystalline aluminum nitride base material for use as a substrate material for grain growth of GaN-base semiconductors, the polycrystalline aluminum nitride base material containing 1 to 10% by weight of a sintering aid component and having a thermal conductivityof not less than 150 W/m-K, and the substrate ha vi ng a surface free from recesses ha vi ng a ma d mum diameter of more than 200 pm, wherein the sintering aid component comprises one or more materials selected from t he group consisting of rare earth elements, rare earth element oxides, and rare earth element-aluminum oxides, the recesses are any one of pores, traces after dropping of AIN crystal grains, and traces after dropping of the sintering aid component, the polycrystalline aluminum nitride base material comprises an aluminum nit ride crystal and a grain boundary phase, grains of the aluminum nitride crystal having a mean diameter of not less than 1 pm and not more than 7 pm, and the substrate surface has a skewness (R s k) of +0.5 to -0.5, and the substrate has a diameter of not less than 50 mm.
(Pre vi ous l y Presented) The polycrystalline aluminum nitride subs t rate according to claim 1, wherein the maximum diameter of the recesses is not more than 50 pm.
(Pre vi ously Presented) The pol yc rystalline aluminum nitride base material according to claim 1, wherein the substrate has a diameter of not less than 50 mm.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein the substrate surface has 0 (zero) or one recess having a maximum diameter of more than 20 pm perunit area of 1 inch x 1 inch.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein 0 (zero) or one micropore having a ma d mum diameter of more than 0.5 pm is present per unit area of 10 pm x 10 pm in the grain boundary phase on the surface of the substrate.
(Pre vi ous l y Presented) A method for manufacturing a GaN-base semiconductor, the method comprising growing a GaN-base semiconductor crystal using a polycrystalline aluminum nitride base material according to claim 1.
The method for manufacturing a GaN-base semiconductor according to claim 1 0, wherein the GaN-basesemiconductor crystal is grown through a buffer layer.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein the crystal growth face of the polycrystalline aluminum nitride substrate is disk, square or rectangular.
canceled
Serial N o. 13/806,337 Page 2 of 12 canceled
canceled
canceled
(Pre vi ously Presented) The pol yc rystalline aluminum nitride base material according to
Layer stacks claimed or described, ordered top of device to substrate.
polycrystalline aluminum nitride substrate for GaN crystal growth
Materials described outside the worked examples.
polycrystalline aluminum nitride
AlN
sintering aid component (rare earth elements, rare earth element oxides, rare earth element-aluminum oxides)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Conductivity | 150 | AlN |
Table 1
Addition Planishin surface roughness amount of Diamond wheel Diamond wheel
y weight) and a yttria (Y₂ 0 3) powder (mean particle diameter 1p m) were mixed at a mixing ratio specified in Table 1 to prepare starting material powders.
p. 9
Table 2
Skewness Thermal Mean Maximum diameter Relative Rsk of diameter of
The results are shown in Table 2.
p. 10
Table 3
Polycrystalline aluminum nitride substrate Layer separation Exa mp le 1A
om the separation defect (that are unusable in the next step) were indicated by "x." The results are shown in Table 3.
p. 11
Table 4
Skewness Thermal Mean Maximum diameter Relative Rsk of diameter of
Related documents with shared materials, methods, properties, or citations.
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Significant Mobility Enhancement in Coupled AlGaN/GaN Quantum Wells considering Inter-Well Distance and Asymmetric Widths
Patent
Atlas literature
Patent
US 9,356,101Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Pre vi ously Presented) A po ly rystalline aluminum nitride base material for use as a substrate material for grain growth of GaN-base semiconductors, the polycrystalline aluminum nitride base material containing 1 to 10% by weight of a sintering aid component and having a thermal conductivityof not less than 150 W/m-K, and the substrate ha vi ng a surface free from recesses ha vi ng a ma d mum diameter of more than 200 pm, wherein the sintering aid component comprises one or more materials selected from t he group consisting of rare earth elements, rare earth element oxides, and rare earth element-aluminum oxides, the recesses are any one of pores, traces after dropping of AIN crystal grains, and traces after dropping of the sintering aid component, the polycrystalline aluminum nitride base material comprises an aluminum nit ride crystal and a grain boundary phase, grains of the aluminum nitride crystal having a mean diameter of not less than 1 pm and not more than 7 pm, and the substrate surface has a skewness (R s k) of +0.5 to -0.5, and the substrate has a diameter of not less than 50 mm.
(Pre vi ous l y Presented) The polycrystalline aluminum nitride subs t rate according to claim 1, wherein the maximum diameter of the recesses is not more than 50 pm.
(Pre vi ously Presented) The pol yc rystalline aluminum nitride base material according to claim 1, wherein the substrate has a diameter of not less than 50 mm.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein the substrate surface has 0 (zero) or one recess having a maximum diameter of more than 20 pm perunit area of 1 inch x 1 inch.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein 0 (zero) or one micropore having a ma d mum diameter of more than 0.5 pm is present per unit area of 10 pm x 10 pm in the grain boundary phase on the surface of the substrate.
(Pre vi ous l y Presented) A method for manufacturing a GaN-base semiconductor, the method comprising growing a GaN-base semiconductor crystal using a polycrystalline aluminum nitride base material according to claim 1.
The method for manufacturing a GaN-base semiconductor according to claim 1 0, wherein the GaN-basesemiconductor crystal is grown through a buffer layer.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein the crystal growth face of the polycrystalline aluminum nitride substrate is disk, square or rectangular.
canceled
Serial N o. 13/806,337 Page 2 of 12 canceled
canceled
canceled
(Pre vi ously Presented) The pol yc rystalline aluminum nitride base material according to
Layer stacks claimed or described, ordered top of device to substrate.
polycrystalline aluminum nitride substrate for GaN crystal growth
Materials described outside the worked examples.
polycrystalline aluminum nitride
AlN
sintering aid component (rare earth elements, rare earth element oxides, rare earth element-aluminum oxides)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Conductivity | 150 | AlN |
Table 1
Addition Planishin surface roughness amount of Diamond wheel Diamond wheel
y weight) and a yttria (Y₂ 0 3) powder (mean particle diameter 1p m) were mixed at a mixing ratio specified in Table 1 to prepare starting material powders.
p. 9
Table 2
Skewness Thermal Mean Maximum diameter Relative Rsk of diameter of
The results are shown in Table 2.
p. 10
Table 3
Polycrystalline aluminum nitride substrate Layer separation Exa mp le 1A
om the separation defect (that are unusable in the next step) were indicated by "x." The results are shown in Table 3.
p. 11
Table 4
Skewness Thermal Mean Maximum diameter Relative Rsk of diameter of
Related documents with shared materials, methods, properties, or citations.
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Significant Mobility Enhancement in Coupled AlGaN/GaN Quantum Wells considering Inter-Well Distance and Asymmetric Widths
Patent
Atlas literature
Patent
US 9,356,101Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Pre vi ously Presented) A po ly rystalline aluminum nitride base material for use as a substrate material for grain growth of GaN-base semiconductors, the polycrystalline aluminum nitride base material containing 1 to 10% by weight of a sintering aid component and having a thermal conductivityof not less than 150 W/m-K, and the substrate ha vi ng a surface free from recesses ha vi ng a ma d mum diameter of more than 200 pm, wherein the sintering aid component comprises one or more materials selected from t he group consisting of rare earth elements, rare earth element oxides, and rare earth element-aluminum oxides, the recesses are any one of pores, traces after dropping of AIN crystal grains, and traces after dropping of the sintering aid component, the polycrystalline aluminum nitride base material comprises an aluminum nit ride crystal and a grain boundary phase, grains of the aluminum nitride crystal having a mean diameter of not less than 1 pm and not more than 7 pm, and the substrate surface has a skewness (R s k) of +0.5 to -0.5, and the substrate has a diameter of not less than 50 mm.
(Pre vi ous l y Presented) The polycrystalline aluminum nitride subs t rate according to claim 1, wherein the maximum diameter of the recesses is not more than 50 pm.
(Pre vi ously Presented) The pol yc rystalline aluminum nitride base material according to claim 1, wherein the substrate has a diameter of not less than 50 mm.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein the substrate surface has 0 (zero) or one recess having a maximum diameter of more than 20 pm perunit area of 1 inch x 1 inch.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein 0 (zero) or one micropore having a ma d mum diameter of more than 0.5 pm is present per unit area of 10 pm x 10 pm in the grain boundary phase on the surface of the substrate.
(Pre vi ous l y Presented) A method for manufacturing a GaN-base semiconductor, the method comprising growing a GaN-base semiconductor crystal using a polycrystalline aluminum nitride base material according to claim 1.
The method for manufacturing a GaN-base semiconductor according to claim 1 0, wherein the GaN-basesemiconductor crystal is grown through a buffer layer.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein the crystal growth face of the polycrystalline aluminum nitride substrate is disk, square or rectangular.
canceled
Serial N o. 13/806,337 Page 2 of 12 canceled
canceled
canceled
(Pre vi ously Presented) The pol yc rystalline aluminum nitride base material according to
Layer stacks claimed or described, ordered top of device to substrate.
polycrystalline aluminum nitride substrate for GaN crystal growth
Materials described outside the worked examples.
polycrystalline aluminum nitride
AlN
sintering aid component (rare earth elements, rare earth element oxides, rare earth element-aluminum oxides)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Conductivity | 150 | AlN |
Table 1
Addition Planishin surface roughness amount of Diamond wheel Diamond wheel
y weight) and a yttria (Y₂ 0 3) powder (mean particle diameter 1p m) were mixed at a mixing ratio specified in Table 1 to prepare starting material powders.
p. 9
Table 2
Skewness Thermal Mean Maximum diameter Relative Rsk of diameter of
The results are shown in Table 2.
p. 10
Table 3
Polycrystalline aluminum nitride substrate Layer separation Exa mp le 1A
om the separation defect (that are unusable in the next step) were indicated by "x." The results are shown in Table 3.
p. 11
Table 4
Skewness Thermal Mean Maximum diameter Relative Rsk of diameter of
Related documents with shared materials, methods, properties, or citations.
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Significant Mobility Enhancement in Coupled AlGaN/GaN Quantum Wells considering Inter-Well Distance and Asymmetric Widths
Patent
Atlas literature
Patent
US 9,356,101Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
(Pre vi ously Presented) A po ly rystalline aluminum nitride base material for use as a substrate material for grain growth of GaN-base semiconductors, the polycrystalline aluminum nitride base material containing 1 to 10% by weight of a sintering aid component and having a thermal conductivityof not less than 150 W/m-K, and the substrate ha vi ng a surface free from recesses ha vi ng a ma d mum diameter of more than 200 pm, wherein the sintering aid component comprises one or more materials selected from t he group consisting of rare earth elements, rare earth element oxides, and rare earth element-aluminum oxides, the recesses are any one of pores, traces after dropping of AIN crystal grains, and traces after dropping of the sintering aid component, the polycrystalline aluminum nitride base material comprises an aluminum nit ride crystal and a grain boundary phase, grains of the aluminum nitride crystal having a mean diameter of not less than 1 pm and not more than 7 pm, and the substrate surface has a skewness (R s k) of +0.5 to -0.5, and the substrate has a diameter of not less than 50 mm.
(Pre vi ous l y Presented) The polycrystalline aluminum nitride subs t rate according to claim 1, wherein the maximum diameter of the recesses is not more than 50 pm.
(Pre vi ously Presented) The pol yc rystalline aluminum nitride base material according to claim 1, wherein the substrate has a diameter of not less than 50 mm.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein the substrate surface has 0 (zero) or one recess having a maximum diameter of more than 20 pm perunit area of 1 inch x 1 inch.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein 0 (zero) or one micropore having a ma d mum diameter of more than 0.5 pm is present per unit area of 10 pm x 10 pm in the grain boundary phase on the surface of the substrate.
(Pre vi ous l y Presented) A method for manufacturing a GaN-base semiconductor, the method comprising growing a GaN-base semiconductor crystal using a polycrystalline aluminum nitride base material according to claim 1.
The method for manufacturing a GaN-base semiconductor according to claim 1 0, wherein the GaN-basesemiconductor crystal is grown through a buffer layer.
(Pre vi ously Presented) The polycrystalline aluminum nitride base material according to claim 1, wherein the crystal growth face of the polycrystalline aluminum nitride substrate is disk, square or rectangular.
canceled
Serial N o. 13/806,337 Page 2 of 12 canceled
canceled
canceled
(Pre vi ously Presented) The pol yc rystalline aluminum nitride base material according to
Layer stacks claimed or described, ordered top of device to substrate.
polycrystalline aluminum nitride substrate for GaN crystal growth
Materials described outside the worked examples.
polycrystalline aluminum nitride
AlN
sintering aid component (rare earth elements, rare earth element oxides, rare earth element-aluminum oxides)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thermal Conductivity | 150 | AlN |
Table 1
Addition Planishin surface roughness amount of Diamond wheel Diamond wheel
y weight) and a yttria (Y₂ 0 3) powder (mean particle diameter 1p m) were mixed at a mixing ratio specified in Table 1 to prepare starting material powders.
p. 9
Table 2
Skewness Thermal Mean Maximum diameter Relative Rsk of diameter of
The results are shown in Table 2.
p. 10
Table 3
Polycrystalline aluminum nitride substrate Layer separation Exa mp le 1A
om the separation defect (that are unusable in the next step) were indicated by "x." The results are shown in Table 3.
p. 11
Table 4
Skewness Thermal Mean Maximum diameter Relative Rsk of diameter of
Related documents with shared materials, methods, properties, or citations.
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Significant Mobility Enhancement in Coupled AlGaN/GaN Quantum Wells considering Inter-Well Distance and Asymmetric Widths
yttria
Y₂O₃
GaN-base semiconductor crystal
GaN
InGaN
AlGaN
InAlGaN
| 0.1 |
AlN |
Surface Skewness Rsk | — | AlN |
Grain Mean Diameter | — | AlN |
Sintering Aid Content | — | AlN |
Temperature | 500–600 °C | — |
— | ≤ 150 W | — |
Thickness | ≤ 50 mm | — |
The results are shown in Table 4.
p. 12
Table 5
Number of recesses having size of Numb er of m icropores having size of more
micropores having a size of more than 0.5 pm in the "unit area of 10 p m x 10 p m." The results are shown in Table 5.
p. 12
Table 6
Polycrystalline Presence or absence Warpage level of aluminum nitride of
ich the warpage level per inch was 10 m (inclusive) or less, were indicated by "@." The results are shown in Table 6.
p. 13
yttria
Y₂O₃
GaN-base semiconductor crystal
GaN
InGaN
AlGaN
InAlGaN
| 0.1 |
AlN |
Surface Skewness Rsk | — | AlN |
Grain Mean Diameter | — | AlN |
Sintering Aid Content | — | AlN |
Temperature | 500–600 °C | — |
— | ≤ 150 W | — |
Thickness | ≤ 50 mm | — |
The results are shown in Table 4.
p. 12
Table 5
Number of recesses having size of Numb er of m icropores having size of more
micropores having a size of more than 0.5 pm in the "unit area of 10 p m x 10 p m." The results are shown in Table 5.
p. 12
Table 6
Polycrystalline Presence or absence Warpage level of aluminum nitride of
ich the warpage level per inch was 10 m (inclusive) or less, were indicated by "@." The results are shown in Table 6.
p. 13
yttria
Y₂O₃
GaN-base semiconductor crystal
GaN
InGaN
AlGaN
InAlGaN
| 0.1 |
AlN |
Surface Skewness Rsk | — | AlN |
Grain Mean Diameter | — | AlN |
Sintering Aid Content | — | AlN |
Temperature | 500–600 °C | — |
— | ≤ 150 W | — |
Thickness | ≤ 50 mm | — |
The results are shown in Table 4.
p. 12
Table 5
Number of recesses having size of Numb er of m icropores having size of more
micropores having a size of more than 0.5 pm in the "unit area of 10 p m x 10 p m." The results are shown in Table 5.
p. 12
Table 6
Polycrystalline Presence or absence Warpage level of aluminum nitride of
ich the warpage level per inch was 10 m (inclusive) or less, were indicated by "@." The results are shown in Table 6.
p. 13
yttria
Y₂O₃
GaN-base semiconductor crystal
GaN
InGaN
AlGaN
InAlGaN
| 0.1 |
AlN |
Surface Skewness Rsk | — | AlN |
Grain Mean Diameter | — | AlN |
Sintering Aid Content | — | AlN |
Temperature | 500–600 °C | — |
— | ≤ 150 W | — |
Thickness | ≤ 50 mm | — |
The results are shown in Table 4.
p. 12
Table 5
Number of recesses having size of Numb er of m icropores having size of more
micropores having a size of more than 0.5 pm in the "unit area of 10 p m x 10 p m." The results are shown in Table 5.
p. 12
Table 6
Polycrystalline Presence or absence Warpage level of aluminum nitride of
ich the warpage level per inch was 10 m (inclusive) or less, were indicated by "@." The results are shown in Table 6.
p. 13