Research paperExperimental GrowthExperimental CharacterizationBandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlNJakub Iwański, Mateusz Tokarczyk, Aleksandra K. Dąbrowska, Jan Pawłowski et al.arXiv preprint·2023·10.48550/arXiv.2305.15810·arXiv:2305.15810AbstractWe demonstrate bandgap manipulation of hexagonal boron nitride through aluminum alloying. A set of aluminum-alloyed hexagonal boron nitride (hB1−xAlxN) samples was grown by MOVPE on sapphire substrates with different aluminum concentration. The layers preserved an sp2-bonded crystal structure. Optical absorption experiments showed two strong peaks in the excitonic spectral range, consistent with indirect and direct bandgap transitions in hBN, with a slight redshift and enhanced absorption coefficient, supporting bandgap reduction by Al alloying.Read more
MOVPE-grown hB₁-xAlxN sample S0.02 with TMAl/III ratio 0.02.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.04 with TMAl/III ratio 0.04.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.07 with TMAl/III ratio 0.07.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.13 with TMAl/III ratio 0.13.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationBandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlNJakub Iwański, Mateusz Tokarczyk, Aleksandra K. Dąbrowska, Jan Pawłowski et al.arXiv preprint·2023·10.48550/arXiv.2305.15810·arXiv:2305.15810AbstractWe demonstrate bandgap manipulation of hexagonal boron nitride through aluminum alloying. A set of aluminum-alloyed hexagonal boron nitride (hB1−xAlxN) samples was grown by MOVPE on sapphire substrates with different aluminum concentration. The layers preserved an sp2-bonded crystal structure. Optical absorption experiments showed two strong peaks in the excitonic spectral range, consistent with indirect and direct bandgap transitions in hBN, with a slight redshift and enhanced absorption coefficient, supporting bandgap reduction by Al alloying.Read more
MOVPE-grown hB₁-xAlxN sample S0.02 with TMAl/III ratio 0.02.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.04 with TMAl/III ratio 0.04.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.07 with TMAl/III ratio 0.07.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.13 with TMAl/III ratio 0.13.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationBandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlNJakub Iwański, Mateusz Tokarczyk, Aleksandra K. Dąbrowska, Jan Pawłowski et al.arXiv preprint·2023·10.48550/arXiv.2305.15810·arXiv:2305.15810AbstractWe demonstrate bandgap manipulation of hexagonal boron nitride through aluminum alloying. A set of aluminum-alloyed hexagonal boron nitride (hB1−xAlxN) samples was grown by MOVPE on sapphire substrates with different aluminum concentration. The layers preserved an sp2-bonded crystal structure. Optical absorption experiments showed two strong peaks in the excitonic spectral range, consistent with indirect and direct bandgap transitions in hBN, with a slight redshift and enhanced absorption coefficient, supporting bandgap reduction by Al alloying.Read more
MOVPE-grown hB₁-xAlxN sample S0.02 with TMAl/III ratio 0.02.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.04 with TMAl/III ratio 0.04.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.07 with TMAl/III ratio 0.07.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.13 with TMAl/III ratio 0.13.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationBandgap manipulation of hBN by alloying with aluminum: absorption properties of hexagonal BAlNJakub Iwański, Mateusz Tokarczyk, Aleksandra K. Dąbrowska, Jan Pawłowski et al.arXiv preprint·2023·10.48550/arXiv.2305.15810·arXiv:2305.15810AbstractWe demonstrate bandgap manipulation of hexagonal boron nitride through aluminum alloying. A set of aluminum-alloyed hexagonal boron nitride (hB1−xAlxN) samples was grown by MOVPE on sapphire substrates with different aluminum concentration. The layers preserved an sp2-bonded crystal structure. Optical absorption experiments showed two strong peaks in the excitonic spectral range, consistent with indirect and direct bandgap transitions in hBN, with a slight redshift and enhanced absorption coefficient, supporting bandgap reduction by Al alloying.Read more
MOVPE-grown hB₁-xAlxN sample S0.02 with TMAl/III ratio 0.02.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.04 with TMAl/III ratio 0.04.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.07 with TMAl/III ratio 0.07.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand
MOVPE-grown hB₁-xAlxN sample S0.13 with TMAl/III ratio 0.13.1 preparation4 characterizations5 properties2 figuresExperimentalhB₁-xAlxNStudied MaterialExpand