Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Katie M. Eggleton; Joseph K. Cannon; Sam G. Bishop; John P. Hadden; Chunyu Zhao; Menno J. Kappers; Rachel A. Oliver; Anthony J. Bennett

doi:10.17035/cardiff.29617235

Paper details

Research paper

Experimental GrowthExperimental Characterization

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Katie M. Eggleton, Joseph K. Cannon, Sam G. Bishop, John P. Hadden et al.

2026·10.17035/cardiff.29617235·arXiv:2601.11309

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Complete GaN-on-Si epitaxial stack with AlN nucleation layer, compositionally graded AlGaN, GaN buffer, regrown GaN connecting layer, silane-treated QE layer, and GaN overgrowth.

2 preparations2 characterizations8 properties3 figures

ExperimentalGaNStudied MaterialAlNStudied MaterialAlGaNStudied MaterialSiSubstrate / Dielectric

Uncapped GaN nano-island QE layer grown on a silane-treated GaN surface and removed from the reactor after annealing, before the final GaN overgrowth.

2 preparations3 characterizations2 properties3 figures

ExperimentalGaNStudied MaterialSiSubstrate / Dielectric

Patterned epitaxial stack with etched and unetched regions used to verify emitter depth by controlled etching.

2 preparations2 characterizations3 figures

ExperimentalGaNStudied MaterialSiSubstrate / Dielectric

Materials

gallium nitride

GaN

Studied Material

Also known as

GaN

studied material

aluminum nitride

AlN

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Controlled epitaxy of room-temperature quantum emitters in gallium nitride | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	QE emission window	550-1000nm	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Pl Peak Fwhm	ZPL linewidth	19-33nm	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Pl Quantum Yield	Debye-Waller factor	0.31-0.63	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
PL Peak	AlN-like QE emission range	600-900nm	GaN	Uncapped GaN nano-island QE layer grown on a silane-treated		—
Fet On Off Ratio	g(2)(0) for QE₃	0.26	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Fet On Off Ratio	g(2)(0) for QE₄	0.7	GaN	Uncapped GaN nano-island QE layer grown on a silane-treated		—
Fet On Off Ratio	g(2)(0) for QE₃	0.26 ± 0.05	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak	antibunching timescale	5.6ns	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak	bunching timescale	1980ns	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak Intensity	antibunching amplitude	-0.92	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
PL Peak	regex-detected PL peak	1000nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	QE emission window	550-1000nm	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Pl Peak Fwhm	ZPL linewidth	19-33nm	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Pl Quantum Yield	Debye-Waller factor	0.31-0.63	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
PL Peak	AlN-like QE emission range	600-900nm	GaN	Uncapped GaN nano-island QE layer grown on a silane-treated		—
Fet On Off Ratio	g(2)(0) for QE₃	0.26	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Fet On Off Ratio	g(2)(0) for QE₄	0.7	GaN	Uncapped GaN nano-island QE layer grown on a silane-treated		—
Fet On Off Ratio	g(2)(0) for QE₃	0.26 ± 0.05	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak	antibunching timescale	5.6ns	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak	bunching timescale	1980ns	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak Intensity	antibunching amplitude	-0.92	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
PL Peak	regex-detected PL peak	1000nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	QE emission window	550-1000nm	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Pl Peak Fwhm	ZPL linewidth	19-33nm	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Pl Quantum Yield	Debye-Waller factor	0.31-0.63	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
PL Peak	AlN-like QE emission range	600-900nm	GaN	Uncapped GaN nano-island QE layer grown on a silane-treated		—
Fet On Off Ratio	g(2)(0) for QE₃	0.26	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Fet On Off Ratio	g(2)(0) for QE₄	0.7	GaN	Uncapped GaN nano-island QE layer grown on a silane-treated		—
Fet On Off Ratio	g(2)(0) for QE₃	0.26 ± 0.05	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak	antibunching timescale	5.6ns	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak	bunching timescale	1980ns	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak Intensity	antibunching amplitude	-0.92	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
PL Peak	regex-detected PL peak	1000nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	QE emission window	550-1000nm	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Pl Peak Fwhm	ZPL linewidth	19-33nm	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Pl Quantum Yield	Debye-Waller factor	0.31-0.63	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
PL Peak	AlN-like QE emission range	600-900nm	GaN	Uncapped GaN nano-island QE layer grown on a silane-treated		—
Fet On Off Ratio	g(2)(0) for QE₃	0.26	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Fet On Off Ratio	g(2)(0) for QE₄	0.7	GaN	Uncapped GaN nano-island QE layer grown on a silane-treated		—
Fet On Off Ratio	g(2)(0) for QE₃	0.26 ± 0.05	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak	antibunching timescale	5.6ns	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak	bunching timescale	1980ns	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
Raman Peak Intensity	antibunching amplitude	-0.92	GaN	Complete GaN-on-Si epitaxial stack with AlN nucleation layer		—
PL Peak	regex-detected PL peak	1000nm	—	—	—	—

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Samples

Complete GaN-on-Si epitaxial stack with AlN nucleation layer, compositionally graded AlGaN, GaN buffer, regrown GaN connecting layer, silane-treated QE layer, and GaN overgrowth.

Uncapped GaN nano-island QE layer grown on a silane-treated GaN surface and removed from the reactor after annealing, before the final GaN overgrowth.

Patterned epitaxial stack with etched and unetched regions used to verify emitter depth by controlled etching.

Materials

Why these are connected

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Samples

Complete GaN-on-Si epitaxial stack with AlN nucleation layer, compositionally graded AlGaN, GaN buffer, regrown GaN connecting layer, silane-treated QE layer, and GaN overgrowth.

Uncapped GaN nano-island QE layer grown on a silane-treated GaN surface and removed from the reactor after annealing, before the final GaN overgrowth.

Patterned epitaxial stack with etched and unetched regions used to verify emitter depth by controlled etching.

Materials

Why these are connected

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Samples

Complete GaN-on-Si epitaxial stack with AlN nucleation layer, compositionally graded AlGaN, GaN buffer, regrown GaN connecting layer, silane-treated QE layer, and GaN overgrowth.

Uncapped GaN nano-island QE layer grown on a silane-treated GaN surface and removed from the reactor after annealing, before the final GaN overgrowth.

Patterned epitaxial stack with etched and unetched regions used to verify emitter depth by controlled etching.

Materials

Why these are connected

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Samples

Complete GaN-on-Si epitaxial stack with AlN nucleation layer, compositionally graded AlGaN, GaN buffer, regrown GaN connecting layer, silane-treated QE layer, and GaN overgrowth.

Uncapped GaN nano-island QE layer grown on a silane-treated GaN surface and removed from the reactor after annealing, before the final GaN overgrowth.

Patterned epitaxial stack with etched and unetched regions used to verify emitter depth by controlled etching.

Materials

Why these are connected

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Samples

Complete GaN-on-Si epitaxial stack with AlN nucleation layer, compositionally graded AlGaN, GaN buffer, regrown GaN connecting layer, silane-treated QE layer, and GaN overgrowth.

Uncapped GaN nano-island QE layer grown on a silane-treated GaN surface and removed from the reactor after annealing, before the final GaN overgrowth.

Patterned epitaxial stack with etched and unetched regions used to verify emitter depth by controlled etching.

Materials

Why these are connected

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Samples

Complete GaN-on-Si epitaxial stack with AlN nucleation layer, compositionally graded AlGaN, GaN buffer, regrown GaN connecting layer, silane-treated QE layer, and GaN overgrowth.

Uncapped GaN nano-island QE layer grown on a silane-treated GaN surface and removed from the reactor after annealing, before the final GaN overgrowth.

Patterned epitaxial stack with etched and unetched regions used to verify emitter depth by controlled etching.

Materials

Why these are connected

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Samples

Complete GaN-on-Si epitaxial stack with AlN nucleation layer, compositionally graded AlGaN, GaN buffer, regrown GaN connecting layer, silane-treated QE layer, and GaN overgrowth.

Uncapped GaN nano-island QE layer grown on a silane-treated GaN surface and removed from the reactor after annealing, before the final GaN overgrowth.

Patterned epitaxial stack with etched and unetched regions used to verify emitter depth by controlled etching.

Materials

Why these are connected

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Samples

Complete GaN-on-Si epitaxial stack with AlN nucleation layer, compositionally graded AlGaN, GaN buffer, regrown GaN connecting layer, silane-treated QE layer, and GaN overgrowth.

Uncapped GaN nano-island QE layer grown on a silane-treated GaN surface and removed from the reactor after annealing, before the final GaN overgrowth.

Patterned epitaxial stack with etched and unetched regions used to verify emitter depth by controlled etching.

Materials

Why these are connected

Growth

Processing

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Growth

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Growth

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Growth

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