Patent
US 9,978,845METHOD OF OBTAINING PLANAR SEMIPOLAR GALLIUM NITRIDE SURFACES
Jung Han, Benjamin Leung
YALE UNIVERSITY·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,978,845Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an elevation view depicting a portion of a substrate comprising III- 30 nitride material epitaxially grown on a patterned sapphire substrate, …
FIGS. 2C-2F depict structures associated with a process for masking selected surfaces of a patterned sapphire substrate, according to some embodiments; 5
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 5A is an SEM image showing, in elevation view, planar regrowth of semipolar GaN formed on a patterned sapphire substrate, according to some embodiments;
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming an epitaxial layer of semipolar gallium- nitride on a substrate, the method comprising [[:]] growing semipolar gallium-nitride adjacent to crystal-growth surfaces of a patterned sapphire substrate, wherein the crystal-growth surfaces comprise a first portion of a plurality of surfaces of different orientations formed on the patterned sapphire substrate that are not masked by a maskin g material that masks a remainin g second portion of the plurality of surfaces and wherein the crystal-growth surfaces have one select orientation of the different orientations;. Currently amended
The method of claim 1, further comprising forming a low-temperature aluminum-nitride or a low-temperature gallium-nitride buffer layer at the crystal-growth surfaces. Original
The method of claim 1, further comprising: planarizing the grown semipolar gallium-nitride; and regrowing the semipolar gallium-nitride using a nitrogen carrier gas. New
The method of claim [[1]] 26, wherein regrowing the semipolar gallium-nitride comprises regrowth conditions that do not include a hydrogen carrier gas. Currently amended
The method of claim [[1]] 26, wherein the nitrogen carrier gas is N 2. Currently amended
The method of claim [[1]] 26, wherein regrowing the semipolar gallium-nitride comprises growing the semipolar gallium-nitride using metal-organic chemical vapor deposition. Currently amended
The method of claim 4, wherein a temperature during regrowth is between approximately 980 ° C and approximately 1070 °C. Original
The method of claim 4, wherein a pressure during regrowth is between approximately 100 mbar and approximately 300 mbar. Original
The method of claim 4, wherein a flow rate of NH 3 gas during regrowth is between approximately 0.5 slm and approximately 4 slm. Original
The method of claim 4, wherein a flow rate of trimethylgallium or triethylgallium during regrowth is between approximately 30 seem and approximately 50 se em. Original
The method of claim 4, wherein a growth rate during regrowth is between 1 p m/hr and approximately 2 p m/hr. Original
The method of claim [[1]] 26, wherein growing semipolar gallium- nitride and regrowing semipolar gallium-nitride comprise growing the gallium-nitride with a (2021) facet approximately parallel to a process surface of the substrate. Currently amended
The method of claim [[1]] 26, wherein planarizing the grown semipolar gallium-nitride comprises planarization by chemical-mechanical polishing. Currently amended
The method of claim [[1]] 26, further comprising, prior to growing semipolar gallium-nitride, forming [[a]] t he masking layer to cover the plurality of surfaces of the patterned sapphire substrate. Currently amended
The method of claim 14, wherein forming the masking layer comprises depositing a material conformally by a vapor deposition process. Original
A substrate comprising: a patterned sapphire substrate having a plurality of surfaces at different orientations and a masking layer formed over all of the plurality of surfaces except crystal-growth surfaces that are a portion of the plurality of surfaces having one select orientation of the different orientations and a semipolar gallium-nitride epitaxial layer formed over the patterned sapphire substrate. Currently amended
The substrate of claim 17, wherein the patterned sapphire substrate has a (2243) facet approximately parallel to a process surface of the substrate and a c-plane facet approximately parallel to the crystal-growth surfaces. SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.18.1339.2004.1353.2027.svg 0.077 0.047 Chemistry Black and white Original
The substrate of claim 17, wherein the patterned sapphire substrate comprises an array of trenches with the crystal-growth surfaces forming inclined walls of the trenches SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.20.2106.2263.2120.2286.svg 0.077 0.047 Chemistry Black and white. SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.19.2286.2176.2300.2199.svg 0.077 0.047 Chemistry Black and white Original
The substrate of claim 17, further comprising a buffer layer between the crystal-growth surfaces and the epitaxial gallium-nitride. Original
The substrate of claim [[17]] 21, wherein the planar semipolar gallium-nitride epitaxial layer has a single and continuous planar surface across the substrate that is pproximately parallel to a (2021) facet of the semipolar gallium-nitride. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
planar semipolar GaN on patterned sapphire substrate
Materials described outside the worked examples.
semipolar gallium nitride
GaN
patterned sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface roughness RMS of planar semipolar GaN layer (15 µm × 15 µm area) | ≤ 5 nm | GaN |
surface roughness RMS of planar semipolar GaN layer, some instances | ≤ 3 nm |
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STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
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US 9,978,845Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an elevation view depicting a portion of a substrate comprising III- 30 nitride material epitaxially grown on a patterned sapphire substrate, …
FIGS. 2C-2F depict structures associated with a process for masking selected surfaces of a patterned sapphire substrate, according to some embodiments; 5
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 5A is an SEM image showing, in elevation view, planar regrowth of semipolar GaN formed on a patterned sapphire substrate, according to some embodiments;
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming an epitaxial layer of semipolar gallium- nitride on a substrate, the method comprising [[:]] growing semipolar gallium-nitride adjacent to crystal-growth surfaces of a patterned sapphire substrate, wherein the crystal-growth surfaces comprise a first portion of a plurality of surfaces of different orientations formed on the patterned sapphire substrate that are not masked by a maskin g material that masks a remainin g second portion of the plurality of surfaces and wherein the crystal-growth surfaces have one select orientation of the different orientations;. Currently amended
The method of claim 1, further comprising forming a low-temperature aluminum-nitride or a low-temperature gallium-nitride buffer layer at the crystal-growth surfaces. Original
The method of claim 1, further comprising: planarizing the grown semipolar gallium-nitride; and regrowing the semipolar gallium-nitride using a nitrogen carrier gas. New
The method of claim [[1]] 26, wherein regrowing the semipolar gallium-nitride comprises regrowth conditions that do not include a hydrogen carrier gas. Currently amended
The method of claim [[1]] 26, wherein the nitrogen carrier gas is N 2. Currently amended
The method of claim [[1]] 26, wherein regrowing the semipolar gallium-nitride comprises growing the semipolar gallium-nitride using metal-organic chemical vapor deposition. Currently amended
The method of claim 4, wherein a temperature during regrowth is between approximately 980 ° C and approximately 1070 °C. Original
The method of claim 4, wherein a pressure during regrowth is between approximately 100 mbar and approximately 300 mbar. Original
The method of claim 4, wherein a flow rate of NH 3 gas during regrowth is between approximately 0.5 slm and approximately 4 slm. Original
The method of claim 4, wherein a flow rate of trimethylgallium or triethylgallium during regrowth is between approximately 30 seem and approximately 50 se em. Original
The method of claim 4, wherein a growth rate during regrowth is between 1 p m/hr and approximately 2 p m/hr. Original
The method of claim [[1]] 26, wherein growing semipolar gallium- nitride and regrowing semipolar gallium-nitride comprise growing the gallium-nitride with a (2021) facet approximately parallel to a process surface of the substrate. Currently amended
The method of claim [[1]] 26, wherein planarizing the grown semipolar gallium-nitride comprises planarization by chemical-mechanical polishing. Currently amended
The method of claim [[1]] 26, further comprising, prior to growing semipolar gallium-nitride, forming [[a]] t he masking layer to cover the plurality of surfaces of the patterned sapphire substrate. Currently amended
The method of claim 14, wherein forming the masking layer comprises depositing a material conformally by a vapor deposition process. Original
A substrate comprising: a patterned sapphire substrate having a plurality of surfaces at different orientations and a masking layer formed over all of the plurality of surfaces except crystal-growth surfaces that are a portion of the plurality of surfaces having one select orientation of the different orientations and a semipolar gallium-nitride epitaxial layer formed over the patterned sapphire substrate. Currently amended
The substrate of claim 17, wherein the patterned sapphire substrate has a (2243) facet approximately parallel to a process surface of the substrate and a c-plane facet approximately parallel to the crystal-growth surfaces. SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.18.1339.2004.1353.2027.svg 0.077 0.047 Chemistry Black and white Original
The substrate of claim 17, wherein the patterned sapphire substrate comprises an array of trenches with the crystal-growth surfaces forming inclined walls of the trenches SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.20.2106.2263.2120.2286.svg 0.077 0.047 Chemistry Black and white. SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.19.2286.2176.2300.2199.svg 0.077 0.047 Chemistry Black and white Original
The substrate of claim 17, further comprising a buffer layer between the crystal-growth surfaces and the epitaxial gallium-nitride. Original
The substrate of claim [[17]] 21, wherein the planar semipolar gallium-nitride epitaxial layer has a single and continuous planar surface across the substrate that is pproximately parallel to a (2021) facet of the semipolar gallium-nitride. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
planar semipolar GaN on patterned sapphire substrate
Materials described outside the worked examples.
semipolar gallium nitride
GaN
patterned sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface roughness RMS of planar semipolar GaN layer (15 µm × 15 µm area) | ≤ 5 nm | GaN |
surface roughness RMS of planar semipolar GaN layer, some instances | ≤ 3 nm |
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STACKING FAULT-FREE SEMIPOLAR AND NONPOLAR GAN GROWN ON FOREIGN SUBSTRATES BY ELIMINATING THE NITROGEN POLAR FACETS DURING THE GROWTH
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US 9,978,845Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an elevation view depicting a portion of a substrate comprising III- 30 nitride material epitaxially grown on a patterned sapphire substrate, …
FIGS. 2C-2F depict structures associated with a process for masking selected surfaces of a patterned sapphire substrate, according to some embodiments; 5
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 5A is an SEM image showing, in elevation view, planar regrowth of semipolar GaN formed on a patterned sapphire substrate, according to some embodiments;
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming an epitaxial layer of semipolar gallium- nitride on a substrate, the method comprising [[:]] growing semipolar gallium-nitride adjacent to crystal-growth surfaces of a patterned sapphire substrate, wherein the crystal-growth surfaces comprise a first portion of a plurality of surfaces of different orientations formed on the patterned sapphire substrate that are not masked by a maskin g material that masks a remainin g second portion of the plurality of surfaces and wherein the crystal-growth surfaces have one select orientation of the different orientations;. Currently amended
The method of claim 1, further comprising forming a low-temperature aluminum-nitride or a low-temperature gallium-nitride buffer layer at the crystal-growth surfaces. Original
The method of claim 1, further comprising: planarizing the grown semipolar gallium-nitride; and regrowing the semipolar gallium-nitride using a nitrogen carrier gas. New
The method of claim [[1]] 26, wherein regrowing the semipolar gallium-nitride comprises regrowth conditions that do not include a hydrogen carrier gas. Currently amended
The method of claim [[1]] 26, wherein the nitrogen carrier gas is N 2. Currently amended
The method of claim [[1]] 26, wherein regrowing the semipolar gallium-nitride comprises growing the semipolar gallium-nitride using metal-organic chemical vapor deposition. Currently amended
The method of claim 4, wherein a temperature during regrowth is between approximately 980 ° C and approximately 1070 °C. Original
The method of claim 4, wherein a pressure during regrowth is between approximately 100 mbar and approximately 300 mbar. Original
The method of claim 4, wherein a flow rate of NH 3 gas during regrowth is between approximately 0.5 slm and approximately 4 slm. Original
The method of claim 4, wherein a flow rate of trimethylgallium or triethylgallium during regrowth is between approximately 30 seem and approximately 50 se em. Original
The method of claim 4, wherein a growth rate during regrowth is between 1 p m/hr and approximately 2 p m/hr. Original
The method of claim [[1]] 26, wherein growing semipolar gallium- nitride and regrowing semipolar gallium-nitride comprise growing the gallium-nitride with a (2021) facet approximately parallel to a process surface of the substrate. Currently amended
The method of claim [[1]] 26, wherein planarizing the grown semipolar gallium-nitride comprises planarization by chemical-mechanical polishing. Currently amended
The method of claim [[1]] 26, further comprising, prior to growing semipolar gallium-nitride, forming [[a]] t he masking layer to cover the plurality of surfaces of the patterned sapphire substrate. Currently amended
The method of claim 14, wherein forming the masking layer comprises depositing a material conformally by a vapor deposition process. Original
A substrate comprising: a patterned sapphire substrate having a plurality of surfaces at different orientations and a masking layer formed over all of the plurality of surfaces except crystal-growth surfaces that are a portion of the plurality of surfaces having one select orientation of the different orientations and a semipolar gallium-nitride epitaxial layer formed over the patterned sapphire substrate. Currently amended
The substrate of claim 17, wherein the patterned sapphire substrate has a (2243) facet approximately parallel to a process surface of the substrate and a c-plane facet approximately parallel to the crystal-growth surfaces. SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.18.1339.2004.1353.2027.svg 0.077 0.047 Chemistry Black and white Original
The substrate of claim 17, wherein the patterned sapphire substrate comprises an array of trenches with the crystal-growth surfaces forming inclined walls of the trenches SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.20.2106.2263.2120.2286.svg 0.077 0.047 Chemistry Black and white. SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.19.2286.2176.2300.2199.svg 0.077 0.047 Chemistry Black and white Original
The substrate of claim 17, further comprising a buffer layer between the crystal-growth surfaces and the epitaxial gallium-nitride. Original
The substrate of claim [[17]] 21, wherein the planar semipolar gallium-nitride epitaxial layer has a single and continuous planar surface across the substrate that is pproximately parallel to a (2021) facet of the semipolar gallium-nitride. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
planar semipolar GaN on patterned sapphire substrate
Materials described outside the worked examples.
semipolar gallium nitride
GaN
patterned sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface roughness RMS of planar semipolar GaN layer (15 µm × 15 µm area) | ≤ 5 nm | GaN |
surface roughness RMS of planar semipolar GaN layer, some instances | ≤ 3 nm |
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US 9,978,845Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an elevation view depicting a portion of a substrate comprising III- 30 nitride material epitaxially grown on a patterned sapphire substrate, …
FIGS. 2C-2F depict structures associated with a process for masking selected surfaces of a patterned sapphire substrate, according to some embodiments; 5
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 5A is an SEM image showing, in elevation view, planar regrowth of semipolar GaN formed on a patterned sapphire substrate, according to some embodiments;
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming an epitaxial layer of semipolar gallium- nitride on a substrate, the method comprising [[:]] growing semipolar gallium-nitride adjacent to crystal-growth surfaces of a patterned sapphire substrate, wherein the crystal-growth surfaces comprise a first portion of a plurality of surfaces of different orientations formed on the patterned sapphire substrate that are not masked by a maskin g material that masks a remainin g second portion of the plurality of surfaces and wherein the crystal-growth surfaces have one select orientation of the different orientations;. Currently amended
The method of claim 1, further comprising forming a low-temperature aluminum-nitride or a low-temperature gallium-nitride buffer layer at the crystal-growth surfaces. Original
The method of claim 1, further comprising: planarizing the grown semipolar gallium-nitride; and regrowing the semipolar gallium-nitride using a nitrogen carrier gas. New
The method of claim [[1]] 26, wherein regrowing the semipolar gallium-nitride comprises regrowth conditions that do not include a hydrogen carrier gas. Currently amended
The method of claim [[1]] 26, wherein the nitrogen carrier gas is N 2. Currently amended
The method of claim [[1]] 26, wherein regrowing the semipolar gallium-nitride comprises growing the semipolar gallium-nitride using metal-organic chemical vapor deposition. Currently amended
The method of claim 4, wherein a temperature during regrowth is between approximately 980 ° C and approximately 1070 °C. Original
The method of claim 4, wherein a pressure during regrowth is between approximately 100 mbar and approximately 300 mbar. Original
The method of claim 4, wherein a flow rate of NH 3 gas during regrowth is between approximately 0.5 slm and approximately 4 slm. Original
The method of claim 4, wherein a flow rate of trimethylgallium or triethylgallium during regrowth is between approximately 30 seem and approximately 50 se em. Original
The method of claim 4, wherein a growth rate during regrowth is between 1 p m/hr and approximately 2 p m/hr. Original
The method of claim [[1]] 26, wherein growing semipolar gallium- nitride and regrowing semipolar gallium-nitride comprise growing the gallium-nitride with a (2021) facet approximately parallel to a process surface of the substrate. Currently amended
The method of claim [[1]] 26, wherein planarizing the grown semipolar gallium-nitride comprises planarization by chemical-mechanical polishing. Currently amended
The method of claim [[1]] 26, further comprising, prior to growing semipolar gallium-nitride, forming [[a]] t he masking layer to cover the plurality of surfaces of the patterned sapphire substrate. Currently amended
The method of claim 14, wherein forming the masking layer comprises depositing a material conformally by a vapor deposition process. Original
A substrate comprising: a patterned sapphire substrate having a plurality of surfaces at different orientations and a masking layer formed over all of the plurality of surfaces except crystal-growth surfaces that are a portion of the plurality of surfaces having one select orientation of the different orientations and a semipolar gallium-nitride epitaxial layer formed over the patterned sapphire substrate. Currently amended
The substrate of claim 17, wherein the patterned sapphire substrate has a (2243) facet approximately parallel to a process surface of the substrate and a c-plane facet approximately parallel to the crystal-growth surfaces. SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.18.1339.2004.1353.2027.svg 0.077 0.047 Chemistry Black and white Original
The substrate of claim 17, wherein the patterned sapphire substrate comprises an array of trenches with the crystal-growth surfaces forming inclined walls of the trenches SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.20.2106.2263.2120.2286.svg 0.077 0.047 Chemistry Black and white. SVG 15304189.10-03-2017.J₈BT₁W₅JRXEAPX1.CLM.3.19.2286.2176.2300.2199.svg 0.077 0.047 Chemistry Black and white Original
The substrate of claim 17, further comprising a buffer layer between the crystal-growth surfaces and the epitaxial gallium-nitride. Original
The substrate of claim [[17]] 21, wherein the planar semipolar gallium-nitride epitaxial layer has a single and continuous planar surface across the substrate that is pproximately parallel to a (2021) facet of the semipolar gallium-nitride. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
planar semipolar GaN on patterned sapphire substrate
Materials described outside the worked examples.
semipolar gallium nitride
GaN
patterned sapphire substrate
Al₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface roughness RMS of planar semipolar GaN layer (15 µm × 15 µm area) | ≤ 5 nm | GaN |
surface roughness RMS of planar semipolar GaN layer, some instances | ≤ 3 nm |
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masking material
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
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AlN
nitrogen carrier gas
N₂
ammonia
NH₃
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 5A is an SEM image showing, in elevation view, planar regrowth of semipolar GaN formed on a patterned sapphire substrate, according to some embodiments;
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
AlN buffer layer thickness | 10–50 nm | AlN |
trench spacing in patterned sapphire substrate | 0.25–10 microns | Al₂O₃ |
trench depth in patterned sapphire substrate | ≤ 2 microns | Al₂O₃ |
Temperature | 980–1070 °C | — |
Temperature | 740–770 °C | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 1 nm | — |
Temperature | 1000–1200 °C | — |
Temperature | 450–600 °C | — |
Thickness | 10–40 nm | — |
Temperature | 1000–1100 °C | — |
Duration | 1–10 minutes | — |
Thickness | 2–6 µm | — |
Thickness | 200–10000 nm | — |
Temperature | ≤ 600 °C | — |
Thickness | 0.25–10 µm | — |
Thickness | 50–2000 nm | — |
masking material
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
aluminum nitride buffer layer
AlN
nitrogen carrier gas
N₂
ammonia
NH₃
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 5A is an SEM image showing, in elevation view, planar regrowth of semipolar GaN formed on a patterned sapphire substrate, according to some embodiments;
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
AlN buffer layer thickness | 10–50 nm | AlN |
trench spacing in patterned sapphire substrate | 0.25–10 microns | Al₂O₃ |
trench depth in patterned sapphire substrate | ≤ 2 microns | Al₂O₃ |
Temperature | 980–1070 °C | — |
Temperature | 740–770 °C | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 1 nm | — |
Temperature | 1000–1200 °C | — |
Temperature | 450–600 °C | — |
Thickness | 10–40 nm | — |
Temperature | 1000–1100 °C | — |
Duration | 1–10 minutes | — |
Thickness | 2–6 µm | — |
Thickness | 200–10000 nm | — |
Temperature | ≤ 600 °C | — |
Thickness | 0.25–10 µm | — |
Thickness | 50–2000 nm | — |
masking material
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
aluminum nitride buffer layer
AlN
nitrogen carrier gas
N₂
ammonia
NH₃
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 5A is an SEM image showing, in elevation view, planar regrowth of semipolar GaN formed on a patterned sapphire substrate, according to some embodiments;
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
AlN buffer layer thickness | 10–50 nm | AlN |
trench spacing in patterned sapphire substrate | 0.25–10 microns | Al₂O₃ |
trench depth in patterned sapphire substrate | ≤ 2 microns | Al₂O₃ |
Temperature | 980–1070 °C | — |
Temperature | 740–770 °C | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 1 nm | — |
Temperature | 1000–1200 °C | — |
Temperature | 450–600 °C | — |
Thickness | 10–40 nm | — |
Temperature | 1000–1100 °C | — |
Duration | 1–10 minutes | — |
Thickness | 2–6 µm | — |
Thickness | 200–10000 nm | — |
Temperature | ≤ 600 °C | — |
Thickness | 0.25–10 µm | — |
Thickness | 50–2000 nm | — |
masking material
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
aluminum nitride buffer layer
AlN
nitrogen carrier gas
N₂
ammonia
NH₃
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 3E shows a low-temperature photoluminescence (LT-PL) spectrum of epitaxially-grown semipolar GaN, with the peak positions marked and assigned to GaN 25 …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 4A is a scanning-electron microscope (SEM) image showing, in plan view, regrowth of semipolar GaN using a hydrogen ca rr ier gas during regrowth, …
FIG. 5A is an SEM image showing, in elevation view, planar regrowth of semipolar GaN formed on a patterned sapphire substrate, according to some embodiments;
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
FIG. 6C is a plot of photoluminescence spectra for a 10-pair InGaN/GaN MQW structure formed on an epitaxial layer of semipolar GaN without planarization (curve …
AlN buffer layer thickness | 10–50 nm | AlN |
trench spacing in patterned sapphire substrate | 0.25–10 microns | Al₂O₃ |
trench depth in patterned sapphire substrate | ≤ 2 microns | Al₂O₃ |
Temperature | 980–1070 °C | — |
Temperature | 740–770 °C | — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 1 nm | — |
Temperature | 1000–1200 °C | — |
Temperature | 450–600 °C | — |
Thickness | 10–40 nm | — |
Temperature | 1000–1100 °C | — |
Duration | 1–10 minutes | — |
Thickness | 2–6 µm | — |
Thickness | 200–10000 nm | — |
Temperature | ≤ 600 °C | — |
Thickness | 0.25–10 µm | — |
Thickness | 50–2000 nm | — |