Patent
Atlas literature
Patent
US 12,559,856 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a growth device in Example 1 of the present application.
FIG. 2 is a schematic structural diagram of a growth device in Example 2 of the present application.
FIG. 3 is an element content test results graph of semi- 40 insulating gallium arsenide crystal of Example 1 of the present application.
FIG. 4 is an element content test results graph of semi- insulating gallium arsenide crystal of Example 2 of the present application. 45
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
VGF single crystal furnace
Quartz crucible
Quartz cap
Receiving groove
Transition tube
Graphite
Crystal seed
GaAs polycrystals
Boron oxide
Layer stacks claimed or described, ordered top of device to substrate.
VGF single crystal growth device
Materials described outside the worked examples.
GaAs polycrystals
GaAs
graphite
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an element content test results graph of semi- 40 insulating gallium arsenide crystal of Example 1 of the present application.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Resistivity | 10000000–500000000 Ω·cm | GaAs |
Radial Resistivity Variation | ≤ 8 % |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,559,856 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a growth device in Example 1 of the present application.
FIG. 2 is a schematic structural diagram of a growth device in Example 2 of the present application.
FIG. 3 is an element content test results graph of semi- 40 insulating gallium arsenide crystal of Example 1 of the present application.
FIG. 4 is an element content test results graph of semi- insulating gallium arsenide crystal of Example 2 of the present application. 45
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
VGF single crystal furnace
Quartz crucible
Quartz cap
Receiving groove
Transition tube
Graphite
Crystal seed
GaAs polycrystals
Boron oxide
Layer stacks claimed or described, ordered top of device to substrate.
VGF single crystal growth device
Materials described outside the worked examples.
GaAs polycrystals
GaAs
graphite
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an element content test results graph of semi- 40 insulating gallium arsenide crystal of Example 1 of the present application.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Resistivity | 10000000–500000000 Ω·cm | GaAs |
Radial Resistivity Variation | ≤ 8 % |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,559,856 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a growth device in Example 1 of the present application.
FIG. 2 is a schematic structural diagram of a growth device in Example 2 of the present application.
FIG. 3 is an element content test results graph of semi- 40 insulating gallium arsenide crystal of Example 1 of the present application.
FIG. 4 is an element content test results graph of semi- insulating gallium arsenide crystal of Example 2 of the present application. 45
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
VGF single crystal furnace
Quartz crucible
Quartz cap
Receiving groove
Transition tube
Graphite
Crystal seed
GaAs polycrystals
Boron oxide
Layer stacks claimed or described, ordered top of device to substrate.
VGF single crystal growth device
Materials described outside the worked examples.
GaAs polycrystals
GaAs
graphite
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an element content test results graph of semi- 40 insulating gallium arsenide crystal of Example 1 of the present application.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Resistivity | 10000000–500000000 Ω·cm | GaAs |
Radial Resistivity Variation | ≤ 8 % |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,559,856 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a growth device in Example 1 of the present application.
FIG. 2 is a schematic structural diagram of a growth device in Example 2 of the present application.
FIG. 3 is an element content test results graph of semi- 40 insulating gallium arsenide crystal of Example 1 of the present application.
FIG. 4 is an element content test results graph of semi- insulating gallium arsenide crystal of Example 2 of the present application. 45
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
VGF single crystal furnace
Quartz crucible
Quartz cap
Receiving groove
Transition tube
Graphite
Crystal seed
GaAs polycrystals
Boron oxide
Layer stacks claimed or described, ordered top of device to substrate.
VGF single crystal growth device
Materials described outside the worked examples.
GaAs polycrystals
GaAs
graphite
C
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is an element content test results graph of semi- 40 insulating gallium arsenide crystal of Example 1 of the present application.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Resistivity | 10000000–500000000 Ω·cm | GaAs |
Radial Resistivity Variation | ≤ 8 % |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
quartz
SiO₂
boron oxide
B₂O₃
PBN crucible
FIG. 4 is an element content test results graph of semi- insulating gallium arsenide crystal of Example 2 of the present application. 45
Si Concentration | 11400000000000–4500000000000000 Atoms·cm⁻³ | GaAs |
C Concentration | 6000000000000000–20000000000000000 Atoms·cm⁻³ | GaAs |
Temperature | 2–6 °C | — |
Temperature | 0.1–5 °C | — |
Temperature | 1200–1238 °C | — |
Temperature | 1000–1200 °C | — |
Temperature | 5–15 °C | — |
Temperature | 50–1000 °C | — |
Temperature | 5–10 °C | — |
Temperature | 3–8 °C | — |
Temperature | 2–7 °C | — |
Temperature | 1–3 °C | — |
Temperature | 20–40 °C | — |
Temperature | 1–5 °C | — |
Temperature | 0.1–10 °C | — |
Thickness | 8–25 cm | — |
Temperature | ≤ 1 °C | — |
Temperature | ≥ 1200 °C | — |
Cited non-patent literature · 2
quartz
SiO₂
boron oxide
B₂O₃
PBN crucible
FIG. 4 is an element content test results graph of semi- insulating gallium arsenide crystal of Example 2 of the present application. 45
Si Concentration | 11400000000000–4500000000000000 Atoms·cm⁻³ | GaAs |
C Concentration | 6000000000000000–20000000000000000 Atoms·cm⁻³ | GaAs |
Temperature | 2–6 °C | — |
Temperature | 0.1–5 °C | — |
Temperature | 1200–1238 °C | — |
Temperature | 1000–1200 °C | — |
Temperature | 5–15 °C | — |
Temperature | 50–1000 °C | — |
Temperature | 5–10 °C | — |
Temperature | 3–8 °C | — |
Temperature | 2–7 °C | — |
Temperature | 1–3 °C | — |
Temperature | 20–40 °C | — |
Temperature | 1–5 °C | — |
Temperature | 0.1–10 °C | — |
Thickness | 8–25 cm | — |
Temperature | ≤ 1 °C | — |
Temperature | ≥ 1200 °C | — |
Cited non-patent literature · 2
quartz
SiO₂
boron oxide
B₂O₃
PBN crucible
FIG. 4 is an element content test results graph of semi- insulating gallium arsenide crystal of Example 2 of the present application. 45
Si Concentration | 11400000000000–4500000000000000 Atoms·cm⁻³ | GaAs |
C Concentration | 6000000000000000–20000000000000000 Atoms·cm⁻³ | GaAs |
Temperature | 2–6 °C | — |
Temperature | 0.1–5 °C | — |
Temperature | 1200–1238 °C | — |
Temperature | 1000–1200 °C | — |
Temperature | 5–15 °C | — |
Temperature | 50–1000 °C | — |
Temperature | 5–10 °C | — |
Temperature | 3–8 °C | — |
Temperature | 2–7 °C | — |
Temperature | 1–3 °C | — |
Temperature | 20–40 °C | — |
Temperature | 1–5 °C | — |
Temperature | 0.1–10 °C | — |
Thickness | 8–25 cm | — |
Temperature | ≤ 1 °C | — |
Temperature | ≥ 1200 °C | — |
Cited non-patent literature · 2
quartz
SiO₂
boron oxide
B₂O₃
PBN crucible
FIG. 4 is an element content test results graph of semi- insulating gallium arsenide crystal of Example 2 of the present application. 45
Si Concentration | 11400000000000–4500000000000000 Atoms·cm⁻³ | GaAs |
C Concentration | 6000000000000000–20000000000000000 Atoms·cm⁻³ | GaAs |
Temperature | 2–6 °C | — |
Temperature | 0.1–5 °C | — |
Temperature | 1200–1238 °C | — |
Temperature | 1000–1200 °C | — |
Temperature | 5–15 °C | — |
Temperature | 50–1000 °C | — |
Temperature | 5–10 °C | — |
Temperature | 3–8 °C | — |
Temperature | 2–7 °C | — |
Temperature | 1–3 °C | — |
Temperature | 20–40 °C | — |
Temperature | 1–5 °C | — |
Temperature | 0.1–10 °C | — |
Thickness | 8–25 cm | — |
Temperature | ≤ 1 °C | — |
Temperature | ≥ 1200 °C | — |
Cited non-patent literature · 2
