Patent
US 9,469,916Method of Producing GaAs Single Crystal and GaAs Single Crystal Wafer
Ryoichi Nakamura
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 9,469,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. A production method of this embodiment 20 uses a vertical boat method (vertical gradient freeze method and vertical Bridgman method). FIG 1 is a …
FIG. 3 is a cross-sectional view schematically showing a crucible of a single crystal production apparatus used for a method of producing a GaAs single 5 …
FIG. 4 is a graph showing the relationships between the concentration of Si in GaAs and the concentration of B in GaAs in Examples, Comparative Examples, and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a GaAs single crystal, wherein a vertical boat method is performed with a crucible storing a seed crystal, a Si material serving as an impurity, a GaAs material, a solid silicon dioxide, and a boron oxide material in which SiO, is previously added into the boron oxide material, thereby growing a GaAs single crystalc rystal, wherein the solid silicon dioxide is in a disk shape and is provided between the GaAs material and the boron oxide material, a ratio of an area of the solid silicon dioxide to an area of the upper surface of the GaAs material at a start of crystal growth is 90% to 99%, an amount of Si of SiO, previously added into the boron oxide material is 5 mass% or less, and a sum of an amount of Si of SiO, in the boron oxide material and an amount of Si in the solid silicon dioxide exceeds 5 mass% of the boron oxide material.
The method of producing a GaAs single crystal according to Claim 1, wherein in a specific period in the growth of the GaAs single crystal, liquid boron oxide which is a melt of the boron oxide material is stirred.
canceled
The method of producing a GaAs single crystal according to Claim 2, C laim 1, wherein in a specific period in the growth of the GaAs single crystal, liquid boron oxide which is a melt of the boron oxide material is stirred.
A Si-doped GaAs single crystal wafer, wherein a carrier concentration is higher than 2 x 10 18 cm -3, and the maximum value of an etch pit density is 500 cm⁻² or less, the B concentration is in a range of 1.9 x 10 1 8 cm⁻³ to 6.0 x 10 1 8 cm- 3, and the Si concentration is in a range of 4.3 x 10 18 cm- 3 to 6.2 x 1018 cm⁻³.
The Si-doped GaAs single crystal wafer according to Claim 4, wherein a car ri er concentration is 2 x 10 18 cm⁻³ to 3.1 x 10 18 cm~ 3.
The Si-doped GaAs single crystal wafer according to Claim 4, wherein an average value of an etch pit density is 8 cm 2 to 21 cm⁻²
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A GaAs single crystal ingot was grown using a 3-inch diameter VGF/VB apparatus with a PBN crucible. Materials loaded in order: GaAs seed crystal; GaAs polycrystal (6.0 kg) + Si crystal (1200 mg, 200 mass ppm w.r.t. GaAs); quartz plate stack (two disk-shaped plates, 9.1 g, diameter 75 mm vs. crucible inner diameter 80 mm); B₂O₃ material pre-doped with SiO₂ at 4.0 mass% Si (360 g). Sum of Si in B₂O₃ and Si in quartz plate = 18.7 g = 5.2 mass% of B₂O₃ mass. Chamber evacuated, filled with Ar, pressurized to 6 atm, then heated to 8 atm to melt materials. After solidification started from seed crystal side, liquid B₂O₃ was stirred by rotating a stirring plate at 2 rpm from solidification ratio 0.33 to end of growth.
Layer stacks claimed or described, ordered top of device to substrate.
Si-doped GaAs single crystal wafer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph showing the relationships between the concentration of Si in GaAs and the concentration of B in GaAs in Examples, Comparative Examples, and a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
carrier concentration lower bound (claim) | ≥ 2000000000000000000 | GaAs:Si |
maximum etch pit density (claim) | ≤ 500 |
Table 1
SVG
[0048 } 10 (Evaluation result) The evaluation results of Examples and Comparative Examples are shown in Table 1.
p. 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,469,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. A production method of this embodiment 20 uses a vertical boat method (vertical gradient freeze method and vertical Bridgman method). FIG 1 is a …
FIG. 3 is a cross-sectional view schematically showing a crucible of a single crystal production apparatus used for a method of producing a GaAs single 5 …
FIG. 4 is a graph showing the relationships between the concentration of Si in GaAs and the concentration of B in GaAs in Examples, Comparative Examples, and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a GaAs single crystal, wherein a vertical boat method is performed with a crucible storing a seed crystal, a Si material serving as an impurity, a GaAs material, a solid silicon dioxide, and a boron oxide material in which SiO, is previously added into the boron oxide material, thereby growing a GaAs single crystalc rystal, wherein the solid silicon dioxide is in a disk shape and is provided between the GaAs material and the boron oxide material, a ratio of an area of the solid silicon dioxide to an area of the upper surface of the GaAs material at a start of crystal growth is 90% to 99%, an amount of Si of SiO, previously added into the boron oxide material is 5 mass% or less, and a sum of an amount of Si of SiO, in the boron oxide material and an amount of Si in the solid silicon dioxide exceeds 5 mass% of the boron oxide material.
The method of producing a GaAs single crystal according to Claim 1, wherein in a specific period in the growth of the GaAs single crystal, liquid boron oxide which is a melt of the boron oxide material is stirred.
canceled
The method of producing a GaAs single crystal according to Claim 2, C laim 1, wherein in a specific period in the growth of the GaAs single crystal, liquid boron oxide which is a melt of the boron oxide material is stirred.
A Si-doped GaAs single crystal wafer, wherein a carrier concentration is higher than 2 x 10 18 cm -3, and the maximum value of an etch pit density is 500 cm⁻² or less, the B concentration is in a range of 1.9 x 10 1 8 cm⁻³ to 6.0 x 10 1 8 cm- 3, and the Si concentration is in a range of 4.3 x 10 18 cm- 3 to 6.2 x 1018 cm⁻³.
The Si-doped GaAs single crystal wafer according to Claim 4, wherein a car ri er concentration is 2 x 10 18 cm⁻³ to 3.1 x 10 18 cm~ 3.
The Si-doped GaAs single crystal wafer according to Claim 4, wherein an average value of an etch pit density is 8 cm 2 to 21 cm⁻²
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A GaAs single crystal ingot was grown using a 3-inch diameter VGF/VB apparatus with a PBN crucible. Materials loaded in order: GaAs seed crystal; GaAs polycrystal (6.0 kg) + Si crystal (1200 mg, 200 mass ppm w.r.t. GaAs); quartz plate stack (two disk-shaped plates, 9.1 g, diameter 75 mm vs. crucible inner diameter 80 mm); B₂O₃ material pre-doped with SiO₂ at 4.0 mass% Si (360 g). Sum of Si in B₂O₃ and Si in quartz plate = 18.7 g = 5.2 mass% of B₂O₃ mass. Chamber evacuated, filled with Ar, pressurized to 6 atm, then heated to 8 atm to melt materials. After solidification started from seed crystal side, liquid B₂O₃ was stirred by rotating a stirring plate at 2 rpm from solidification ratio 0.33 to end of growth.
Layer stacks claimed or described, ordered top of device to substrate.
Si-doped GaAs single crystal wafer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph showing the relationships between the concentration of Si in GaAs and the concentration of B in GaAs in Examples, Comparative Examples, and a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
carrier concentration lower bound (claim) | ≥ 2000000000000000000 | GaAs:Si |
maximum etch pit density (claim) | ≤ 500 |
Table 1
SVG
[0048 } 10 (Evaluation result) The evaluation results of Examples and Comparative Examples are shown in Table 1.
p. 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,469,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. A production method of this embodiment 20 uses a vertical boat method (vertical gradient freeze method and vertical Bridgman method). FIG 1 is a …
FIG. 3 is a cross-sectional view schematically showing a crucible of a single crystal production apparatus used for a method of producing a GaAs single 5 …
FIG. 4 is a graph showing the relationships between the concentration of Si in GaAs and the concentration of B in GaAs in Examples, Comparative Examples, and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a GaAs single crystal, wherein a vertical boat method is performed with a crucible storing a seed crystal, a Si material serving as an impurity, a GaAs material, a solid silicon dioxide, and a boron oxide material in which SiO, is previously added into the boron oxide material, thereby growing a GaAs single crystalc rystal, wherein the solid silicon dioxide is in a disk shape and is provided between the GaAs material and the boron oxide material, a ratio of an area of the solid silicon dioxide to an area of the upper surface of the GaAs material at a start of crystal growth is 90% to 99%, an amount of Si of SiO, previously added into the boron oxide material is 5 mass% or less, and a sum of an amount of Si of SiO, in the boron oxide material and an amount of Si in the solid silicon dioxide exceeds 5 mass% of the boron oxide material.
The method of producing a GaAs single crystal according to Claim 1, wherein in a specific period in the growth of the GaAs single crystal, liquid boron oxide which is a melt of the boron oxide material is stirred.
canceled
The method of producing a GaAs single crystal according to Claim 2, C laim 1, wherein in a specific period in the growth of the GaAs single crystal, liquid boron oxide which is a melt of the boron oxide material is stirred.
A Si-doped GaAs single crystal wafer, wherein a carrier concentration is higher than 2 x 10 18 cm -3, and the maximum value of an etch pit density is 500 cm⁻² or less, the B concentration is in a range of 1.9 x 10 1 8 cm⁻³ to 6.0 x 10 1 8 cm- 3, and the Si concentration is in a range of 4.3 x 10 18 cm- 3 to 6.2 x 1018 cm⁻³.
The Si-doped GaAs single crystal wafer according to Claim 4, wherein a car ri er concentration is 2 x 10 18 cm⁻³ to 3.1 x 10 18 cm~ 3.
The Si-doped GaAs single crystal wafer according to Claim 4, wherein an average value of an etch pit density is 8 cm 2 to 21 cm⁻²
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A GaAs single crystal ingot was grown using a 3-inch diameter VGF/VB apparatus with a PBN crucible. Materials loaded in order: GaAs seed crystal; GaAs polycrystal (6.0 kg) + Si crystal (1200 mg, 200 mass ppm w.r.t. GaAs); quartz plate stack (two disk-shaped plates, 9.1 g, diameter 75 mm vs. crucible inner diameter 80 mm); B₂O₃ material pre-doped with SiO₂ at 4.0 mass% Si (360 g). Sum of Si in B₂O₃ and Si in quartz plate = 18.7 g = 5.2 mass% of B₂O₃ mass. Chamber evacuated, filled with Ar, pressurized to 6 atm, then heated to 8 atm to melt materials. After solidification started from seed crystal side, liquid B₂O₃ was stirred by rotating a stirring plate at 2 rpm from solidification ratio 0.33 to end of growth.
Layer stacks claimed or described, ordered top of device to substrate.
Si-doped GaAs single crystal wafer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph showing the relationships between the concentration of Si in GaAs and the concentration of B in GaAs in Examples, Comparative Examples, and a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
carrier concentration lower bound (claim) | ≥ 2000000000000000000 | GaAs:Si |
maximum etch pit density (claim) | ≤ 500 |
Table 1
SVG
[0048 } 10 (Evaluation result) The evaluation results of Examples and Comparative Examples are shown in Table 1.
p. 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,469,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. A production method of this embodiment 20 uses a vertical boat method (vertical gradient freeze method and vertical Bridgman method). FIG 1 is a …
FIG. 3 is a cross-sectional view schematically showing a crucible of a single crystal production apparatus used for a method of producing a GaAs single 5 …
FIG. 4 is a graph showing the relationships between the concentration of Si in GaAs and the concentration of B in GaAs in Examples, Comparative Examples, and a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a GaAs single crystal, wherein a vertical boat method is performed with a crucible storing a seed crystal, a Si material serving as an impurity, a GaAs material, a solid silicon dioxide, and a boron oxide material in which SiO, is previously added into the boron oxide material, thereby growing a GaAs single crystalc rystal, wherein the solid silicon dioxide is in a disk shape and is provided between the GaAs material and the boron oxide material, a ratio of an area of the solid silicon dioxide to an area of the upper surface of the GaAs material at a start of crystal growth is 90% to 99%, an amount of Si of SiO, previously added into the boron oxide material is 5 mass% or less, and a sum of an amount of Si of SiO, in the boron oxide material and an amount of Si in the solid silicon dioxide exceeds 5 mass% of the boron oxide material.
The method of producing a GaAs single crystal according to Claim 1, wherein in a specific period in the growth of the GaAs single crystal, liquid boron oxide which is a melt of the boron oxide material is stirred.
canceled
The method of producing a GaAs single crystal according to Claim 2, C laim 1, wherein in a specific period in the growth of the GaAs single crystal, liquid boron oxide which is a melt of the boron oxide material is stirred.
A Si-doped GaAs single crystal wafer, wherein a carrier concentration is higher than 2 x 10 18 cm -3, and the maximum value of an etch pit density is 500 cm⁻² or less, the B concentration is in a range of 1.9 x 10 1 8 cm⁻³ to 6.0 x 10 1 8 cm- 3, and the Si concentration is in a range of 4.3 x 10 18 cm- 3 to 6.2 x 1018 cm⁻³.
The Si-doped GaAs single crystal wafer according to Claim 4, wherein a car ri er concentration is 2 x 10 18 cm⁻³ to 3.1 x 10 18 cm~ 3.
The Si-doped GaAs single crystal wafer according to Claim 4, wherein an average value of an etch pit density is 8 cm 2 to 21 cm⁻²
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A GaAs single crystal ingot was grown using a 3-inch diameter VGF/VB apparatus with a PBN crucible. Materials loaded in order: GaAs seed crystal; GaAs polycrystal (6.0 kg) + Si crystal (1200 mg, 200 mass ppm w.r.t. GaAs); quartz plate stack (two disk-shaped plates, 9.1 g, diameter 75 mm vs. crucible inner diameter 80 mm); B₂O₃ material pre-doped with SiO₂ at 4.0 mass% Si (360 g). Sum of Si in B₂O₃ and Si in quartz plate = 18.7 g = 5.2 mass% of B₂O₃ mass. Chamber evacuated, filled with Ar, pressurized to 6 atm, then heated to 8 atm to melt materials. After solidification started from seed crystal side, liquid B₂O₃ was stirred by rotating a stirring plate at 2 rpm from solidification ratio 0.33 to end of growth.
Layer stacks claimed or described, ordered top of device to substrate.
Si-doped GaAs single crystal wafer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 4 is a graph showing the relationships between the concentration of Si in GaAs and the concentration of B in GaAs in Examples, Comparative Examples, and a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
carrier concentration lower bound (claim) | ≥ 2000000000000000000 | GaAs:Si |
maximum etch pit density (claim) | ≤ 500 |
Table 1
SVG
[0048 } 10 (Evaluation result) The evaluation results of Examples and Comparative Examples are shown in Table 1.
p. 11
Related documents with shared materials, methods, properties, or citations.
B concentration range (claim) | 1900000000000000000–6000000000000000000 | GaAs:Si |
Si concentration range (claim) | 4300000000000000000–6200000000000000000 | GaAs:Si |
carrier concentration range (claim 6) | 2000000000000000000–3100000000000000000 | GaAs:Si |
average etch pit density range (claims 7, 8) | 8–21 | GaAs:Si |
Thickness | 8–21 cm | — |
Thickness | 2–21 cm | — |
B concentration range (claim) | 1900000000000000000–6000000000000000000 | GaAs:Si |
Si concentration range (claim) | 4300000000000000000–6200000000000000000 | GaAs:Si |
carrier concentration range (claim 6) | 2000000000000000000–3100000000000000000 | GaAs:Si |
average etch pit density range (claims 7, 8) | 8–21 | GaAs:Si |
Thickness | 8–21 cm | — |
Thickness | 2–21 cm | — |
B concentration range (claim) | 1900000000000000000–6000000000000000000 | GaAs:Si |
Si concentration range (claim) | 4300000000000000000–6200000000000000000 | GaAs:Si |
carrier concentration range (claim 6) | 2000000000000000000–3100000000000000000 | GaAs:Si |
average etch pit density range (claims 7, 8) | 8–21 | GaAs:Si |
Thickness | 8–21 cm | — |
Thickness | 2–21 cm | — |
B concentration range (claim) | 1900000000000000000–6000000000000000000 | GaAs:Si |
Si concentration range (claim) | 4300000000000000000–6200000000000000000 | GaAs:Si |
carrier concentration range (claim 6) | 2000000000000000000–3100000000000000000 | GaAs:Si |
average etch pit density range (claims 7, 8) | 8–21 | GaAs:Si |
Thickness | 8–21 cm | — |
Thickness | 2–21 cm | — |