A modified graphene may be used as the base material in an exemplary aspect of the present invention. This may be done by creating holes in the graphene sheet through the 10 removal of certain regions (e.g., not necessarily single atoms). The material (e.g., graphene sheet with a plurality of nanoholes) may be referred to as a graphene nanomesh (GNM).

The exemplary aspects of the present invention (e.g., the DP-GNM) may include a specific periodicity that leads to certain electronic properties (opens up gaps in the electronic 1 spectrum). This periodicity may be characterized by a hole-hole separation of "3xNxA", where "N" is an integer, and "A" is the graphene lattice constant.

The exemplary aspects of the present invention may passivate the borders of the created nanoholes with a passivating element (such as, but not limited to, O, B, N...etc).

The exemplary aspects of the present invention may dope the passivated GNM in such a manner (e.g., using CVD) that the dopants chemically bind to the borders of the nanoholes. An effect of such doping is to shift the Fermi level of the system (e.g., the DP-GNM) from the middle of the bandgap (e.g., yielding a metallic system) without significantly distorting the intrinsic electronic spectrum (e.g., rigid band doping). As a result, the bandgap survives the doping of the GNM, giving a system (e.g., a DP-GNM) that can be 25 electrostatically gated off to the gap region.

The exemplary aspects of the present invention may use combinations of the above described n-doped and p-doped passivated GNMs as a CMOS device. Further, it should be noted that although the embodiments described above focus on a DP-GNM having a uniform lattice pattern of nanoholes, uniform passivating elements, uniform 14 YO R₉₂₀₁₁₀₁₉₄U S₂ dopants, and uniform doping levels, the DP-GNM may have plural regions which may include a different lattice pattern of nanoholes, different passivating elements, different dopants and different doping levels. For example, one DP-GNM (e.g., including a single graphene sheet) may include a first region (e.g., an n-type region) having a lattice constant, L, with oxygen as the 5 passivating element and potassium as the dopant, and having a doping level of about 6 x 10 12cm2, and a second region (e.g., a p-type region) having a lattice constant of L, with nitrogen as the passivating element, and with CB 6 as the dopant, a third region (e.g., an n-type region) having a lattice constant, 2L, with a oxygen as the passivating element and potassium as the dopant, and having a doping level of about 1.2 x 10 13 cm⁻², and so on. 10 With its unique and novel features, the present invention may provide a method of making a semiconductor device including a doped, passivated graphene nanomesh, which may provide ultra-stable doping of the graphene nanomesh. While the invention has been described in terms of one or more embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and 1 scope of the appended claims. Specifically, one of ordinary skill in the art will understand that the drawings herein are meant to be illustrative, and the design of the inventive method and system is not limited to that disclosed herein but may be modified within the spirit and scope of the present invention. Further, Applican t' s intent is to encompass the equivalents of all claim elements, and no amendment to any claim the present application should be construed as a disclaimer of any interest in or right to an equivalent of any element or feature of the amended claim. Claims What is claimed is:

canceled

A doped, passivated graphene nanomesh, comprising: a graphene nanomesh comprising a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron- donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh, wherein the graphene nanomesh comprises a ring including a carbon atom of the plurality of carbon atoms, the passivating element and the dopant, wherein the plurality of nanoholes comprises a lattice configuration including a periodicity for opening a band gap in an elecronic spectrum of the nanomesh, the periodicity comprising a hole-hole separation given by 3 x N x A, where N is an integer and A is the lattice constant for the lattice configuration, wherein the graphene nanomesh includes a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, wherein the dopant comprises a metal atom, and the metal atom is bonded to an atom of the passivating element such that a ring is formed in a hole of the plurality of nanoholes, the ring comprising the atom of the passivating element, the metal atom, and a carbon atom of the plurality of carbon atoms.

A modified graphene may be used as the base material in an exemplary aspect of the present invention. This may be done by creating holes in the graphene sheet through the 10 removal of certain regions (e.g., not necessarily single atoms). The material (e.g., graphene sheet with a plurality of nanoholes) may be referred to as a graphene nanomesh (GNM).

The exemplary aspects of the present invention (e.g., the DP-GNM) may include a specific periodicity that leads to certain electronic properties (opens up gaps in the electronic 1 spectrum). This periodicity may be characterized by a hole-hole separation of "3xNxA", where "N" is an integer, and "A" is the graphene lattice constant.

The exemplary aspects of the present invention may passivate the borders of the created nanoholes with a passivating element (such as, but not limited to, O, B, N...etc).

The exemplary aspects of the present invention may dope the passivated GNM in such a manner (e.g., using CVD) that the dopants chemically bind to the borders of the nanoholes. An effect of such doping is to shift the Fermi level of the system (e.g., the DP-GNM) from the middle of the bandgap (e.g., yielding a metallic system) without significantly distorting the intrinsic electronic spectrum (e.g., rigid band doping). As a result, the bandgap survives the doping of the GNM, giving a system (e.g., a DP-GNM) that can be 25 electrostatically gated off to the gap region.

The exemplary aspects of the present invention may use combinations of the above described n-doped and p-doped passivated GNMs as a CMOS device. Further, it should be noted that although the embodiments described above focus on a DP-GNM having a uniform lattice pattern of nanoholes, uniform passivating elements, uniform 14 YO R₉₂₀₁₁₀₁₉₄U S₂ dopants, and uniform doping levels, the DP-GNM may have plural regions which may include a different lattice pattern of nanoholes, different passivating elements, different dopants and different doping levels. For example, one DP-GNM (e.g., including a single graphene sheet) may include a first region (e.g., an n-type region) having a lattice constant, L, with oxygen as the 5 passivating element and potassium as the dopant, and having a doping level of about 6 x 10 12cm2, and a second region (e.g., a p-type region) having a lattice constant of L, with nitrogen as the passivating element, and with CB 6 as the dopant, a third region (e.g., an n-type region) having a lattice constant, 2L, with a oxygen as the passivating element and potassium as the dopant, and having a doping level of about 1.2 x 10 13 cm⁻², and so on. 10 With its unique and novel features, the present invention may provide a method of making a semiconductor device including a doped, passivated graphene nanomesh, which may provide ultra-stable doping of the graphene nanomesh. While the invention has been described in terms of one or more embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and 1 scope of the appended claims. Specifically, one of ordinary skill in the art will understand that the drawings herein are meant to be illustrative, and the design of the inventive method and system is not limited to that disclosed herein but may be modified within the spirit and scope of the present invention. Further, Applican t' s intent is to encompass the equivalents of all claim elements, and no amendment to any claim the present application should be construed as a disclaimer of any interest in or right to an equivalent of any element or feature of the amended claim. Claims What is claimed is:

canceled

A doped, passivated graphene nanomesh, comprising: a graphene nanomesh comprising a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron- donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh, wherein the graphene nanomesh comprises a ring including a carbon atom of the plurality of carbon atoms, the passivating element and the dopant, wherein the plurality of nanoholes comprises a lattice configuration including a periodicity for opening a band gap in an elecronic spectrum of the nanomesh, the periodicity comprising a hole-hole separation given by 3 x N x A, where N is an integer and A is the lattice constant for the lattice configuration, wherein the graphene nanomesh includes a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, wherein the dopant comprises a metal atom, and the metal atom is bonded to an atom of the passivating element such that a ring is formed in a hole of the plurality of nanoholes, the ring comprising the atom of the passivating element, the metal atom, and a carbon atom of the plurality of carbon atoms.

A modified graphene may be used as the base material in an exemplary aspect of the present invention. This may be done by creating holes in the graphene sheet through the 10 removal of certain regions (e.g., not necessarily single atoms). The material (e.g., graphene sheet with a plurality of nanoholes) may be referred to as a graphene nanomesh (GNM).

The exemplary aspects of the present invention (e.g., the DP-GNM) may include a specific periodicity that leads to certain electronic properties (opens up gaps in the electronic 1 spectrum). This periodicity may be characterized by a hole-hole separation of "3xNxA", where "N" is an integer, and "A" is the graphene lattice constant.

The exemplary aspects of the present invention may passivate the borders of the created nanoholes with a passivating element (such as, but not limited to, O, B, N...etc).

The exemplary aspects of the present invention may dope the passivated GNM in such a manner (e.g., using CVD) that the dopants chemically bind to the borders of the nanoholes. An effect of such doping is to shift the Fermi level of the system (e.g., the DP-GNM) from the middle of the bandgap (e.g., yielding a metallic system) without significantly distorting the intrinsic electronic spectrum (e.g., rigid band doping). As a result, the bandgap survives the doping of the GNM, giving a system (e.g., a DP-GNM) that can be 25 electrostatically gated off to the gap region.

The exemplary aspects of the present invention may use combinations of the above described n-doped and p-doped passivated GNMs as a CMOS device. Further, it should be noted that although the embodiments described above focus on a DP-GNM having a uniform lattice pattern of nanoholes, uniform passivating elements, uniform 14 YO R₉₂₀₁₁₀₁₉₄U S₂ dopants, and uniform doping levels, the DP-GNM may have plural regions which may include a different lattice pattern of nanoholes, different passivating elements, different dopants and different doping levels. For example, one DP-GNM (e.g., including a single graphene sheet) may include a first region (e.g., an n-type region) having a lattice constant, L, with oxygen as the 5 passivating element and potassium as the dopant, and having a doping level of about 6 x 10 12cm2, and a second region (e.g., a p-type region) having a lattice constant of L, with nitrogen as the passivating element, and with CB 6 as the dopant, a third region (e.g., an n-type region) having a lattice constant, 2L, with a oxygen as the passivating element and potassium as the dopant, and having a doping level of about 1.2 x 10 13 cm⁻², and so on. 10 With its unique and novel features, the present invention may provide a method of making a semiconductor device including a doped, passivated graphene nanomesh, which may provide ultra-stable doping of the graphene nanomesh. While the invention has been described in terms of one or more embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and 1 scope of the appended claims. Specifically, one of ordinary skill in the art will understand that the drawings herein are meant to be illustrative, and the design of the inventive method and system is not limited to that disclosed herein but may be modified within the spirit and scope of the present invention. Further, Applican t' s intent is to encompass the equivalents of all claim elements, and no amendment to any claim the present application should be construed as a disclaimer of any interest in or right to an equivalent of any element or feature of the amended claim. Claims What is claimed is:

canceled

A doped, passivated graphene nanomesh, comprising: a graphene nanomesh comprising a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron- donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh, wherein the graphene nanomesh comprises a ring including a carbon atom of the plurality of carbon atoms, the passivating element and the dopant, wherein the plurality of nanoholes comprises a lattice configuration including a periodicity for opening a band gap in an elecronic spectrum of the nanomesh, the periodicity comprising a hole-hole separation given by 3 x N x A, where N is an integer and A is the lattice constant for the lattice configuration, wherein the graphene nanomesh includes a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, wherein the dopant comprises a metal atom, and the metal atom is bonded to an atom of the passivating element such that a ring is formed in a hole of the plurality of nanoholes, the ring comprising the atom of the passivating element, the metal atom, and a carbon atom of the plurality of carbon atoms.

A modified graphene may be used as the base material in an exemplary aspect of the present invention. This may be done by creating holes in the graphene sheet through the 10 removal of certain regions (e.g., not necessarily single atoms). The material (e.g., graphene sheet with a plurality of nanoholes) may be referred to as a graphene nanomesh (GNM).

The exemplary aspects of the present invention (e.g., the DP-GNM) may include a specific periodicity that leads to certain electronic properties (opens up gaps in the electronic 1 spectrum). This periodicity may be characterized by a hole-hole separation of "3xNxA", where "N" is an integer, and "A" is the graphene lattice constant.

The exemplary aspects of the present invention may passivate the borders of the created nanoholes with a passivating element (such as, but not limited to, O, B, N...etc).

The exemplary aspects of the present invention may dope the passivated GNM in such a manner (e.g., using CVD) that the dopants chemically bind to the borders of the nanoholes. An effect of such doping is to shift the Fermi level of the system (e.g., the DP-GNM) from the middle of the bandgap (e.g., yielding a metallic system) without significantly distorting the intrinsic electronic spectrum (e.g., rigid band doping). As a result, the bandgap survives the doping of the GNM, giving a system (e.g., a DP-GNM) that can be 25 electrostatically gated off to the gap region.

The exemplary aspects of the present invention may use combinations of the above described n-doped and p-doped passivated GNMs as a CMOS device. Further, it should be noted that although the embodiments described above focus on a DP-GNM having a uniform lattice pattern of nanoholes, uniform passivating elements, uniform 14 YO R₉₂₀₁₁₀₁₉₄U S₂ dopants, and uniform doping levels, the DP-GNM may have plural regions which may include a different lattice pattern of nanoholes, different passivating elements, different dopants and different doping levels. For example, one DP-GNM (e.g., including a single graphene sheet) may include a first region (e.g., an n-type region) having a lattice constant, L, with oxygen as the 5 passivating element and potassium as the dopant, and having a doping level of about 6 x 10 12cm2, and a second region (e.g., a p-type region) having a lattice constant of L, with nitrogen as the passivating element, and with CB 6 as the dopant, a third region (e.g., an n-type region) having a lattice constant, 2L, with a oxygen as the passivating element and potassium as the dopant, and having a doping level of about 1.2 x 10 13 cm⁻², and so on. 10 With its unique and novel features, the present invention may provide a method of making a semiconductor device including a doped, passivated graphene nanomesh, which may provide ultra-stable doping of the graphene nanomesh. While the invention has been described in terms of one or more embodiments, those skilled in the art will recognize that the invention can be practiced with modification within the spirit and 1 scope of the appended claims. Specifically, one of ordinary skill in the art will understand that the drawings herein are meant to be illustrative, and the design of the inventive method and system is not limited to that disclosed herein but may be modified within the spirit and scope of the present invention. Further, Applican t' s intent is to encompass the equivalents of all claim elements, and no amendment to any claim the present application should be construed as a disclaimer of any interest in or right to an equivalent of any element or feature of the amended claim. Claims What is claimed is:

canceled

A doped, passivated graphene nanomesh, comprising: a graphene nanomesh comprising a plurality of nanoholes formed in a graphene sheet, and a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes; a passivating element bonded to the plurality of carbon atoms; and a dopant bonded to the passivating element, the dopant comprising one of an electron- donating element for making the graphene nanomesh an n-doped graphene nanomesh, and an electron-accepting element for making the graphene nanomesh a p-doped graphene nanomesh, wherein the graphene nanomesh comprises a ring including a carbon atom of the plurality of carbon atoms, the passivating element and the dopant, wherein the plurality of nanoholes comprises a lattice configuration including a periodicity for opening a band gap in an elecronic spectrum of the nanomesh, the periodicity comprising a hole-hole separation given by 3 x N x A, where N is an integer and A is the lattice constant for the lattice configuration, wherein the graphene nanomesh includes a plurality of carbon atoms which are formed adjacent to the plurality of nanoholes, wherein the dopant comprises a metal atom, and the metal atom is bonded to an atom of the passivating element such that a ring is formed in a hole of the plurality of nanoholes, the ring comprising the atom of the passivating element, the metal atom, and a carbon atom of the plurality of carbon atoms.