Patent
US 10,822,722OF INVENTION
Hiroshi FUKUNAGA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,822,722Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide crystal body, wherein an etching pit density of the gallium arsenide crystal body is more than or equal to 10 c m- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal body is less than 5. 0x10 15 atoms cm- 3, a carbon concentration of the gallium arsenide crystal body is more than or equal to 5.0x10 14 atoms -cm⁻³ and less than 1.5x10 16 atoms -cm- 3, a specific resistance of the gallium arsenide crystal body is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and the gallium arsenide crystal body comprising a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
The gallium arsenide crystal body according to claim 1, wherein the oxygen concentration is more than or equal to 2. 0x 10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3. Previously presented
The gallium arsenide crystal body according to claim 1, wherein a boron concentration of the gallium arsenide crystal body is less than or equal to 1.0x 1019 atoms -cm- 3. Previously presented
Claims 3-5. Canceled
Canceled
A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal substrate is less than 5. 0x10 15 atoms -cm⁻³, a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0x10 14 atoms -cm- 3 and less than 1.5x10 16 atoms -cm- 3, a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
The gallium arsenide crystal substrate according to claim 7, wherein the oxygen concentration is more than or equal to 2.0x10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3. Previously presented
The gallium arsenide crystal substrate according to claim 7, wherein a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0x10 19 atoms -cm- 3. Previously presented
Claims 9-11. Canceled
Canceled
A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal substrate is more than or equal to 2.0x10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3, a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0x10 14 atoms -cm- 3 and less than 1.5x10 16 atoms -cm- 3, a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0x 1019 atoms -cm- 3, a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide crystal substrate
Materials described outside the worked examples.
gallium arsenide crystal body
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Etching Pit Density | 10–10000 cm⁻² | GaAs |
Oxygen Concentration | ≤ 5000000000000000 atoms cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,822,722Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide crystal body, wherein an etching pit density of the gallium arsenide crystal body is more than or equal to 10 c m- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal body is less than 5. 0x10 15 atoms cm- 3, a carbon concentration of the gallium arsenide crystal body is more than or equal to 5.0x10 14 atoms -cm⁻³ and less than 1.5x10 16 atoms -cm- 3, a specific resistance of the gallium arsenide crystal body is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and the gallium arsenide crystal body comprising a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
The gallium arsenide crystal body according to claim 1, wherein the oxygen concentration is more than or equal to 2. 0x 10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3. Previously presented
The gallium arsenide crystal body according to claim 1, wherein a boron concentration of the gallium arsenide crystal body is less than or equal to 1.0x 1019 atoms -cm- 3. Previously presented
Claims 3-5. Canceled
Canceled
A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal substrate is less than 5. 0x10 15 atoms -cm⁻³, a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0x10 14 atoms -cm- 3 and less than 1.5x10 16 atoms -cm- 3, a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
The gallium arsenide crystal substrate according to claim 7, wherein the oxygen concentration is more than or equal to 2.0x10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3. Previously presented
The gallium arsenide crystal substrate according to claim 7, wherein a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0x10 19 atoms -cm- 3. Previously presented
Claims 9-11. Canceled
Canceled
A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal substrate is more than or equal to 2.0x10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3, a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0x10 14 atoms -cm- 3 and less than 1.5x10 16 atoms -cm- 3, a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0x 1019 atoms -cm- 3, a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide crystal substrate
Materials described outside the worked examples.
gallium arsenide crystal body
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Etching Pit Density | 10–10000 cm⁻² | GaAs |
Oxygen Concentration | ≤ 5000000000000000 atoms cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,822,722Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide crystal body, wherein an etching pit density of the gallium arsenide crystal body is more than or equal to 10 c m- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal body is less than 5. 0x10 15 atoms cm- 3, a carbon concentration of the gallium arsenide crystal body is more than or equal to 5.0x10 14 atoms -cm⁻³ and less than 1.5x10 16 atoms -cm- 3, a specific resistance of the gallium arsenide crystal body is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and the gallium arsenide crystal body comprising a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
The gallium arsenide crystal body according to claim 1, wherein the oxygen concentration is more than or equal to 2. 0x 10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3. Previously presented
The gallium arsenide crystal body according to claim 1, wherein a boron concentration of the gallium arsenide crystal body is less than or equal to 1.0x 1019 atoms -cm- 3. Previously presented
Claims 3-5. Canceled
Canceled
A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal substrate is less than 5. 0x10 15 atoms -cm⁻³, a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0x10 14 atoms -cm- 3 and less than 1.5x10 16 atoms -cm- 3, a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
The gallium arsenide crystal substrate according to claim 7, wherein the oxygen concentration is more than or equal to 2.0x10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3. Previously presented
The gallium arsenide crystal substrate according to claim 7, wherein a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0x10 19 atoms -cm- 3. Previously presented
Claims 9-11. Canceled
Canceled
A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal substrate is more than or equal to 2.0x10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3, a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0x10 14 atoms -cm- 3 and less than 1.5x10 16 atoms -cm- 3, a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0x 1019 atoms -cm- 3, a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide crystal substrate
Materials described outside the worked examples.
gallium arsenide crystal body
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Etching Pit Density | 10–10000 cm⁻² | GaAs |
Oxygen Concentration | ≤ 5000000000000000 atoms cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,822,722Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide crystal body, wherein an etching pit density of the gallium arsenide crystal body is more than or equal to 10 c m- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal body is less than 5. 0x10 15 atoms cm- 3, a carbon concentration of the gallium arsenide crystal body is more than or equal to 5.0x10 14 atoms -cm⁻³ and less than 1.5x10 16 atoms -cm- 3, a specific resistance of the gallium arsenide crystal body is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and the gallium arsenide crystal body comprising a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
The gallium arsenide crystal body according to claim 1, wherein the oxygen concentration is more than or equal to 2. 0x 10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3. Previously presented
The gallium arsenide crystal body according to claim 1, wherein a boron concentration of the gallium arsenide crystal body is less than or equal to 1.0x 1019 atoms -cm- 3. Previously presented
Claims 3-5. Canceled
Canceled
A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal substrate is less than 5. 0x10 15 atoms -cm⁻³, a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0x10 14 atoms -cm- 3 and less than 1.5x10 16 atoms -cm- 3, a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
The gallium arsenide crystal substrate according to claim 7, wherein the oxygen concentration is more than or equal to 2.0x10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3. Previously presented
The gallium arsenide crystal substrate according to claim 7, wherein a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0x10 19 atoms -cm- 3. Previously presented
Claims 9-11. Canceled
Canceled
A gallium arsenide crystal substrate, wherein an etching pit density of the gallium arsenide crystal substrate is more than or equal to 10 cm- 2 and less than or equal to 10000 c m- 2, an oxygen concentration of the gallium arsenide crystal substrate is more than or equal to 2.0x10 14 atoms -cm- 3 and less than 5.0x10 15 atoms -cm- 3, a carbon concentration of the gallium arsenide crystal substrate is more than or equal to 5.0x10 14 atoms -cm- 3 and less than 1.5x10 16 atoms -cm- 3, a boron concentration of the gallium arsenide crystal substrate is less than or equal to 1.0x 1019 atoms -cm- 3, a specific resistance of the gallium arsenide crystal substrate is more than or equal to 1.2x 10 7 Q- cm and less than or equal to 5. 0x 10 8 Q-cm, and a diameter of the gallium arsenide crystal substrate is more than or equal to 100 mm and less than or equal to 305 mm. Currently amended
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide crystal substrate
Materials described outside the worked examples.
gallium arsenide crystal body
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Etching Pit Density | 10–10000 cm⁻² | GaAs |
Oxygen Concentration | ≤ 5000000000000000 atoms cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Carbon Concentration | 500000000000000–15000000000000000 atoms cm⁻³ | GaAs |
specific_resistance | 12000000–500000000 Ohm-cm | GaAs |
Boron Concentration | ≤ 10000000000000000000 atoms cm⁻³ | GaAs |
Etching Pit Density | 10–10000 cm⁻² | GaAs |
Oxygen Concentration | ≤ 5000000000000000 atoms cm⁻³ | GaAs |
Carbon Concentration | 500000000000000–15000000000000000 atoms cm⁻³ | GaAs |
specific_resistance | 12000000–500000000 Ohm-cm | GaAs |
Boron Concentration | ≤ 10000000000000000000 atoms cm⁻³ | GaAs |
Carbon Concentration | 500000000000000–15000000000000000 atoms cm⁻³ | GaAs |
specific_resistance | 12000000–500000000 Ohm-cm | GaAs |
Boron Concentration | ≤ 10000000000000000000 atoms cm⁻³ | GaAs |
Etching Pit Density | 10–10000 cm⁻² | GaAs |
Oxygen Concentration | ≤ 5000000000000000 atoms cm⁻³ | GaAs |
Carbon Concentration | 500000000000000–15000000000000000 atoms cm⁻³ | GaAs |
specific_resistance | 12000000–500000000 Ohm-cm | GaAs |
Boron Concentration | ≤ 10000000000000000000 atoms cm⁻³ | GaAs |
Carbon Concentration | 500000000000000–15000000000000000 atoms cm⁻³ | GaAs |
specific_resistance | 12000000–500000000 Ohm-cm | GaAs |
Boron Concentration | ≤ 10000000000000000000 atoms cm⁻³ | GaAs |
Etching Pit Density | 10–10000 cm⁻² | GaAs |
Oxygen Concentration | ≤ 5000000000000000 atoms cm⁻³ | GaAs |
Carbon Concentration | 500000000000000–15000000000000000 atoms cm⁻³ | GaAs |
specific_resistance | 12000000–500000000 Ohm-cm | GaAs |
Boron Concentration | ≤ 10000000000000000000 atoms cm⁻³ | GaAs |
Carbon Concentration | 500000000000000–15000000000000000 atoms cm⁻³ | GaAs |
specific_resistance | 12000000–500000000 Ohm-cm | GaAs |
Boron Concentration | ≤ 10000000000000000000 atoms cm⁻³ | GaAs |
Etching Pit Density | 10–10000 cm⁻² | GaAs |
Oxygen Concentration | ≤ 5000000000000000 atoms cm⁻³ | GaAs |
Carbon Concentration | 500000000000000–15000000000000000 atoms cm⁻³ | GaAs |
specific_resistance | 12000000–500000000 Ohm-cm | GaAs |
Boron Concentration | ≤ 10000000000000000000 atoms cm⁻³ | GaAs |