Patent
US 11,408,091Gallium Arsenide Crystal substrate
Masanori MORISHITA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,408,091Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-6. Canceled
Canceled
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing any of silicon atoms at a concentration not lower than 3.0 x 10 16 cm⁻³ and not higher than 3.0 x 19 cm- 3 and carbon atoms at a concentration not lower than 1.0 x 10 1 cm⁻³ and not higher than 5.0 x 10 1 cm⁻³, in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, when the gallium arsenide crystal substrate contains the silicon atoms, the gallium arsenide crystal substrate having an average dislocation density not lower than 0 cm⁻² and not higher than 15000 cm⁻² when the gallium arsenide crystal substrate contains the carbon atoms, the gallium arsenide crystal substrate having an average dislocation density not lower than 3000 cm⁻² and not higher than 20000 cm⁻² the gallium arsenide crystal substrate having average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region. New
The gallium arsenide crystal substrate according to claim 7, containing the silicon atoms at the concentration not lower than 3.0 x 10 16 cm- 3 and not higher than 3.0 x 10 19 cm⁻³, having the average dislocation density not lower than 0 CM-2 and not higher than 15000 cm⁻² in any of the first flat region and the first notch region, and having the average residual strain not less than 2 x 1 0- 6 and not more than 1 x 1 0- 4 in any of the first flat region and the first notch region. New
The gallium arsenide crystal substrate according to claim 7, containing the carbon atoms at the concentration not lower than 1.0 x 10 1 cm- 3 and not higher than 5.0 x 10 17 cm- 3, having the average dislocation density not lower than 3000 cm- 2 and not higher than 20000 cm⁻² in any of the first flat region and the first notch region, and having the average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region. New
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 650 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing silicon atoms at a concentration not lower than 3.0 x 10 16 cm⁻³ and not higher than 3.0 x 10 19 cm⁻³ in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, the gallium arsenide crystal substrate having an average dislocation density not lower than 0 cm⁻² and not higher than 15000 cm⁻² the gallium arsenide crystal substrate having average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region, the gallium arsenide crystal substrate having a carrier concentration not lower than 1.0 x 10 16 cm⁻³ and not higher than 1.0 x 10 19 cm⁻³. New
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 650 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing carbon atoms at a concentration not lower than 1.0 x 10 1 cm⁻³ and not higher than 5.0 x 10 " cm -3, in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, the gallium arsenide crystal substrate having an average dislocation density not lower than 3000 cm- 2 and not higher than 20000 cm 2, the gallium arsenide crystal substrate having average residual strain not less than 7.0 x 10-5 and not more than 1 x 10 -4 in any of the first flat region and the first notch region the gallium arsenide crystal substrate having resistivity not lower than 1.0 x 10 7 i- cm and not higher than 5.0 x 10 8 n- cm. New
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide crystal substrate
Materials described outside the worked examples.
gallium arsenide
GaAs
silicon dopant
Si
carbon dopant
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density (Si-doped GaAs, claim range) | 0–15000 cm⁻² | GaAs |
average dislocation density (C-doped GaAs, claim range) | 3000–20000 cm⁻² |
Table 1
Table 1 summarizes a crack defect ratio in manufacturing of the sub
p. 28
Table 2
Table 1 summarizes a crack defect ratio in manufacturing of the substrate and Table 2 summarizes a crack defect ratio in growth of the epitaxial
p. 28
Table 3
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.32.19.1636.1726.1743.1771.svg 0.15 0.357 Chemistry Black and white Table 3 summarizes a crack defect ratio in manufacturing of the sub
p. 29
Table 4
0.357 Chemistry Black and white Table 3 summarizes a crack defect ratio in manufacturing of the substrate and Table 4 summarizes a crack defect ratio in growth of the epitaxial
p. 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,408,091Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-6. Canceled
Canceled
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing any of silicon atoms at a concentration not lower than 3.0 x 10 16 cm⁻³ and not higher than 3.0 x 19 cm- 3 and carbon atoms at a concentration not lower than 1.0 x 10 1 cm⁻³ and not higher than 5.0 x 10 1 cm⁻³, in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, when the gallium arsenide crystal substrate contains the silicon atoms, the gallium arsenide crystal substrate having an average dislocation density not lower than 0 cm⁻² and not higher than 15000 cm⁻² when the gallium arsenide crystal substrate contains the carbon atoms, the gallium arsenide crystal substrate having an average dislocation density not lower than 3000 cm⁻² and not higher than 20000 cm⁻² the gallium arsenide crystal substrate having average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region. New
The gallium arsenide crystal substrate according to claim 7, containing the silicon atoms at the concentration not lower than 3.0 x 10 16 cm- 3 and not higher than 3.0 x 10 19 cm⁻³, having the average dislocation density not lower than 0 CM-2 and not higher than 15000 cm⁻² in any of the first flat region and the first notch region, and having the average residual strain not less than 2 x 1 0- 6 and not more than 1 x 1 0- 4 in any of the first flat region and the first notch region. New
The gallium arsenide crystal substrate according to claim 7, containing the carbon atoms at the concentration not lower than 1.0 x 10 1 cm- 3 and not higher than 5.0 x 10 17 cm- 3, having the average dislocation density not lower than 3000 cm- 2 and not higher than 20000 cm⁻² in any of the first flat region and the first notch region, and having the average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region. New
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 650 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing silicon atoms at a concentration not lower than 3.0 x 10 16 cm⁻³ and not higher than 3.0 x 10 19 cm⁻³ in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, the gallium arsenide crystal substrate having an average dislocation density not lower than 0 cm⁻² and not higher than 15000 cm⁻² the gallium arsenide crystal substrate having average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region, the gallium arsenide crystal substrate having a carrier concentration not lower than 1.0 x 10 16 cm⁻³ and not higher than 1.0 x 10 19 cm⁻³. New
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 650 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing carbon atoms at a concentration not lower than 1.0 x 10 1 cm⁻³ and not higher than 5.0 x 10 " cm -3, in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, the gallium arsenide crystal substrate having an average dislocation density not lower than 3000 cm- 2 and not higher than 20000 cm 2, the gallium arsenide crystal substrate having average residual strain not less than 7.0 x 10-5 and not more than 1 x 10 -4 in any of the first flat region and the first notch region the gallium arsenide crystal substrate having resistivity not lower than 1.0 x 10 7 i- cm and not higher than 5.0 x 10 8 n- cm. New
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide crystal substrate
Materials described outside the worked examples.
gallium arsenide
GaAs
silicon dopant
Si
carbon dopant
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density (Si-doped GaAs, claim range) | 0–15000 cm⁻² | GaAs |
average dislocation density (C-doped GaAs, claim range) | 3000–20000 cm⁻² |
Table 1
Table 1 summarizes a crack defect ratio in manufacturing of the sub
p. 28
Table 2
Table 1 summarizes a crack defect ratio in manufacturing of the substrate and Table 2 summarizes a crack defect ratio in growth of the epitaxial
p. 28
Table 3
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.32.19.1636.1726.1743.1771.svg 0.15 0.357 Chemistry Black and white Table 3 summarizes a crack defect ratio in manufacturing of the sub
p. 29
Table 4
0.357 Chemistry Black and white Table 3 summarizes a crack defect ratio in manufacturing of the substrate and Table 4 summarizes a crack defect ratio in growth of the epitaxial
p. 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,408,091Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-6. Canceled
Canceled
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing any of silicon atoms at a concentration not lower than 3.0 x 10 16 cm⁻³ and not higher than 3.0 x 19 cm- 3 and carbon atoms at a concentration not lower than 1.0 x 10 1 cm⁻³ and not higher than 5.0 x 10 1 cm⁻³, in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, when the gallium arsenide crystal substrate contains the silicon atoms, the gallium arsenide crystal substrate having an average dislocation density not lower than 0 cm⁻² and not higher than 15000 cm⁻² when the gallium arsenide crystal substrate contains the carbon atoms, the gallium arsenide crystal substrate having an average dislocation density not lower than 3000 cm⁻² and not higher than 20000 cm⁻² the gallium arsenide crystal substrate having average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region. New
The gallium arsenide crystal substrate according to claim 7, containing the silicon atoms at the concentration not lower than 3.0 x 10 16 cm- 3 and not higher than 3.0 x 10 19 cm⁻³, having the average dislocation density not lower than 0 CM-2 and not higher than 15000 cm⁻² in any of the first flat region and the first notch region, and having the average residual strain not less than 2 x 1 0- 6 and not more than 1 x 1 0- 4 in any of the first flat region and the first notch region. New
The gallium arsenide crystal substrate according to claim 7, containing the carbon atoms at the concentration not lower than 1.0 x 10 1 cm- 3 and not higher than 5.0 x 10 17 cm- 3, having the average dislocation density not lower than 3000 cm- 2 and not higher than 20000 cm⁻² in any of the first flat region and the first notch region, and having the average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region. New
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 650 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing silicon atoms at a concentration not lower than 3.0 x 10 16 cm⁻³ and not higher than 3.0 x 10 19 cm⁻³ in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, the gallium arsenide crystal substrate having an average dislocation density not lower than 0 cm⁻² and not higher than 15000 cm⁻² the gallium arsenide crystal substrate having average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region, the gallium arsenide crystal substrate having a carrier concentration not lower than 1.0 x 10 16 cm⁻³ and not higher than 1.0 x 10 19 cm⁻³. New
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 650 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing carbon atoms at a concentration not lower than 1.0 x 10 1 cm⁻³ and not higher than 5.0 x 10 " cm -3, in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, the gallium arsenide crystal substrate having an average dislocation density not lower than 3000 cm- 2 and not higher than 20000 cm 2, the gallium arsenide crystal substrate having average residual strain not less than 7.0 x 10-5 and not more than 1 x 10 -4 in any of the first flat region and the first notch region the gallium arsenide crystal substrate having resistivity not lower than 1.0 x 10 7 i- cm and not higher than 5.0 x 10 8 n- cm. New
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide crystal substrate
Materials described outside the worked examples.
gallium arsenide
GaAs
silicon dopant
Si
carbon dopant
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density (Si-doped GaAs, claim range) | 0–15000 cm⁻² | GaAs |
average dislocation density (C-doped GaAs, claim range) | 3000–20000 cm⁻² |
Table 1
Table 1 summarizes a crack defect ratio in manufacturing of the sub
p. 28
Table 2
Table 1 summarizes a crack defect ratio in manufacturing of the substrate and Table 2 summarizes a crack defect ratio in growth of the epitaxial
p. 28
Table 3
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.32.19.1636.1726.1743.1771.svg 0.15 0.357 Chemistry Black and white Table 3 summarizes a crack defect ratio in manufacturing of the sub
p. 29
Table 4
0.357 Chemistry Black and white Table 3 summarizes a crack defect ratio in manufacturing of the substrate and Table 4 summarizes a crack defect ratio in growth of the epitaxial
p. 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,408,091Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-6. Canceled
Canceled
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing any of silicon atoms at a concentration not lower than 3.0 x 10 16 cm⁻³ and not higher than 3.0 x 19 cm- 3 and carbon atoms at a concentration not lower than 1.0 x 10 1 cm⁻³ and not higher than 5.0 x 10 1 cm⁻³, in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, when the gallium arsenide crystal substrate contains the silicon atoms, the gallium arsenide crystal substrate having an average dislocation density not lower than 0 cm⁻² and not higher than 15000 cm⁻² when the gallium arsenide crystal substrate contains the carbon atoms, the gallium arsenide crystal substrate having an average dislocation density not lower than 3000 cm⁻² and not higher than 20000 cm⁻² the gallium arsenide crystal substrate having average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region. New
The gallium arsenide crystal substrate according to claim 7, containing the silicon atoms at the concentration not lower than 3.0 x 10 16 cm- 3 and not higher than 3.0 x 10 19 cm⁻³, having the average dislocation density not lower than 0 CM-2 and not higher than 15000 cm⁻² in any of the first flat region and the first notch region, and having the average residual strain not less than 2 x 1 0- 6 and not more than 1 x 1 0- 4 in any of the first flat region and the first notch region. New
The gallium arsenide crystal substrate according to claim 7, containing the carbon atoms at the concentration not lower than 1.0 x 10 1 cm- 3 and not higher than 5.0 x 10 17 cm- 3, having the average dislocation density not lower than 3000 cm- 2 and not higher than 20000 cm⁻² in any of the first flat region and the first notch region, and having the average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region. New
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 650 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing silicon atoms at a concentration not lower than 3.0 x 10 16 cm⁻³ and not higher than 3.0 x 10 19 cm⁻³ in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, the gallium arsenide crystal substrate having an average dislocation density not lower than 0 cm⁻² and not higher than 15000 cm⁻² the gallium arsenide crystal substrate having average residual strain not less than 2 x 1 0-6 and not more than 1 x 1 0-4 in any of the first flat region and the first notch region, the gallium arsenide crystal substrate having a carrier concentration not lower than 1.0 x 10 16 cm⁻³ and not higher than 1.0 x 10 19 cm⁻³. New
A gallium arsenide crystal substrate including a main surface having a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 650 m and not greater than 800 m, a part of an outer edge of the gallium arsenide crystal substrate including any of a flat portion and a notch portion, the gallium arsenide crystal substrate containing carbon atoms at a concentration not lower than 1.0 x 10 1 cm⁻³ and not higher than 5.0 x 10 " cm -3, in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, the gallium arsenide crystal substrate having an average dislocation density not lower than 3000 cm- 2 and not higher than 20000 cm 2, the gallium arsenide crystal substrate having average residual strain not less than 7.0 x 10-5 and not more than 1 x 10 -4 in any of the first flat region and the first notch region the gallium arsenide crystal substrate having resistivity not lower than 1.0 x 10 7 i- cm and not higher than 5.0 x 10 8 n- cm. New
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide crystal substrate
Materials described outside the worked examples.
gallium arsenide
GaAs
silicon dopant
Si
carbon dopant
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density (Si-doped GaAs, claim range) | 0–15000 cm⁻² | GaAs |
average dislocation density (C-doped GaAs, claim range) | 3000–20000 cm⁻² |
Table 1
Table 1 summarizes a crack defect ratio in manufacturing of the sub
p. 28
Table 2
Table 1 summarizes a crack defect ratio in manufacturing of the substrate and Table 2 summarizes a crack defect ratio in growth of the epitaxial
p. 28
Table 3
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.32.19.1636.1726.1743.1771.svg 0.15 0.357 Chemistry Black and white Table 3 summarizes a crack defect ratio in manufacturing of the sub
p. 29
Table 4
0.357 Chemistry Black and white Table 3 summarizes a crack defect ratio in manufacturing of the substrate and Table 4 summarizes a crack defect ratio in growth of the epitaxial
p. 29
Related documents with shared materials, methods, properties, or citations.
average residual strain (GaAs, claim range) | 0.000002–0.0001 dimensionless | GaAs |
average residual strain (C-doped GaAs, higher range, claim 14/17) | 0.00007–0.0001 dimensionless | GaAs |
resistivity (C-doped semi-insulating GaAs, claim range) | 10000000–500000000 Ohm·cm | GaAs |
carrier concentration (Si-doped GaAs, claim range) | 10000000000000000–10000000000000000000 cm⁻³ | GaAs |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 1.5 mm | — |
Thickness | ≥ 1.25 mm | — |
Table 5
Table 5 summarizes a c rac k defect rati o in manufacturing of the
p. 29
Table 6
Table 5 summarizes a c rac k defect rati o in manufacturing of the substrate and Table 6 summarizes a c rac k defect rati o in gr o wth of the epita
p. 30
Table 7
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.34.35.1624.2676.1731.2721.svg 0.15 0.357 Chemistry Black and white Table 7 summarizes a c rac k defect rati o in manufacturing of the
p. 30
Table 8
57 Chemistry Black and white Table 7 summarizes a c rac k defect rati o in manufacturing of the substrate and Table 8 summarizes a c rac k defect rati o in gr o wth of the epita
p. 30
Table 9
Table 9 summarizes a c rac k defect ratio in manufacturing of the s
p. 31
Table 10
Table 9 summarizes a c rac k defect ratio in manufacturing of the substrate and Table 10 summarizes a c rac k defect ratio in gr o wth of the epitax
p. 31
Table 11
SVG 16630183.
p. 32
Table 12
Table I l summarizes a crack defect ratio in manufacturing of the substrate and Table 12 summarizes a crack defect ratio in growth of the epitaxial
p. 32
Table 13
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.38.31.1602.2422.1709.2467.svg 0.15 0.357 Chemistry Black and white Table 13 summarizes a rac k defect rati o in manufacturing of the su
p. 32
Table 14
357 Chemistry Black and white Table 13 summarizes a rac k defect rati o in manufacturing of the substrate and Table 14 summarizes a c rac k defect rati o in gr o wth of the epita
p. 32
Table 17
SVG 16630183.
p. 36
Table 18
Table 1 7 summarizes a c rac k defect ratio in manufacturing of the substrate and Table 18 summarizes a c rac k defect ratio in gr o wth of the epitax
p. 35
Table 19
Table 19 summarizes a crack defect ratio in manufacturing of the sub
p. 36
Table 20
Table 19 summarizes a crack defect ratio in manufacturing of the substrate and Table 20 summarizes a crack defect ratio in growth of the epitaxial
p. 36
Gallium Arsenide Cell and Logic Circuit
average residual strain (GaAs, claim range) | 0.000002–0.0001 dimensionless | GaAs |
average residual strain (C-doped GaAs, higher range, claim 14/17) | 0.00007–0.0001 dimensionless | GaAs |
resistivity (C-doped semi-insulating GaAs, claim range) | 10000000–500000000 Ohm·cm | GaAs |
carrier concentration (Si-doped GaAs, claim range) | 10000000000000000–10000000000000000000 cm⁻³ | GaAs |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 1.5 mm | — |
Thickness | ≥ 1.25 mm | — |
Table 5
Table 5 summarizes a c rac k defect rati o in manufacturing of the
p. 29
Table 6
Table 5 summarizes a c rac k defect rati o in manufacturing of the substrate and Table 6 summarizes a c rac k defect rati o in gr o wth of the epita
p. 30
Table 7
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.34.35.1624.2676.1731.2721.svg 0.15 0.357 Chemistry Black and white Table 7 summarizes a c rac k defect rati o in manufacturing of the
p. 30
Table 8
57 Chemistry Black and white Table 7 summarizes a c rac k defect rati o in manufacturing of the substrate and Table 8 summarizes a c rac k defect rati o in gr o wth of the epita
p. 30
Table 9
Table 9 summarizes a c rac k defect ratio in manufacturing of the s
p. 31
Table 10
Table 9 summarizes a c rac k defect ratio in manufacturing of the substrate and Table 10 summarizes a c rac k defect ratio in gr o wth of the epitax
p. 31
Table 11
SVG 16630183.
p. 32
Table 12
Table I l summarizes a crack defect ratio in manufacturing of the substrate and Table 12 summarizes a crack defect ratio in growth of the epitaxial
p. 32
Table 13
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.38.31.1602.2422.1709.2467.svg 0.15 0.357 Chemistry Black and white Table 13 summarizes a rac k defect rati o in manufacturing of the su
p. 32
Table 14
357 Chemistry Black and white Table 13 summarizes a rac k defect rati o in manufacturing of the substrate and Table 14 summarizes a c rac k defect rati o in gr o wth of the epita
p. 32
Table 17
SVG 16630183.
p. 36
Table 18
Table 1 7 summarizes a c rac k defect ratio in manufacturing of the substrate and Table 18 summarizes a c rac k defect ratio in gr o wth of the epitax
p. 35
Table 19
Table 19 summarizes a crack defect ratio in manufacturing of the sub
p. 36
Table 20
Table 19 summarizes a crack defect ratio in manufacturing of the substrate and Table 20 summarizes a crack defect ratio in growth of the epitaxial
p. 36
Gallium Arsenide Cell and Logic Circuit
average residual strain (GaAs, claim range) | 0.000002–0.0001 dimensionless | GaAs |
average residual strain (C-doped GaAs, higher range, claim 14/17) | 0.00007–0.0001 dimensionless | GaAs |
resistivity (C-doped semi-insulating GaAs, claim range) | 10000000–500000000 Ohm·cm | GaAs |
carrier concentration (Si-doped GaAs, claim range) | 10000000000000000–10000000000000000000 cm⁻³ | GaAs |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 1.5 mm | — |
Thickness | ≥ 1.25 mm | — |
Table 5
Table 5 summarizes a c rac k defect rati o in manufacturing of the
p. 29
Table 6
Table 5 summarizes a c rac k defect rati o in manufacturing of the substrate and Table 6 summarizes a c rac k defect rati o in gr o wth of the epita
p. 30
Table 7
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.34.35.1624.2676.1731.2721.svg 0.15 0.357 Chemistry Black and white Table 7 summarizes a c rac k defect rati o in manufacturing of the
p. 30
Table 8
57 Chemistry Black and white Table 7 summarizes a c rac k defect rati o in manufacturing of the substrate and Table 8 summarizes a c rac k defect rati o in gr o wth of the epita
p. 30
Table 9
Table 9 summarizes a c rac k defect ratio in manufacturing of the s
p. 31
Table 10
Table 9 summarizes a c rac k defect ratio in manufacturing of the substrate and Table 10 summarizes a c rac k defect ratio in gr o wth of the epitax
p. 31
Table 11
SVG 16630183.
p. 32
Table 12
Table I l summarizes a crack defect ratio in manufacturing of the substrate and Table 12 summarizes a crack defect ratio in growth of the epitaxial
p. 32
Table 13
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.38.31.1602.2422.1709.2467.svg 0.15 0.357 Chemistry Black and white Table 13 summarizes a rac k defect rati o in manufacturing of the su
p. 32
Table 14
357 Chemistry Black and white Table 13 summarizes a rac k defect rati o in manufacturing of the substrate and Table 14 summarizes a c rac k defect rati o in gr o wth of the epita
p. 32
Table 17
SVG 16630183.
p. 36
Table 18
Table 1 7 summarizes a c rac k defect ratio in manufacturing of the substrate and Table 18 summarizes a c rac k defect ratio in gr o wth of the epitax
p. 35
Table 19
Table 19 summarizes a crack defect ratio in manufacturing of the sub
p. 36
Table 20
Table 19 summarizes a crack defect ratio in manufacturing of the substrate and Table 20 summarizes a crack defect ratio in growth of the epitaxial
p. 36
Gallium Arsenide Cell and Logic Circuit
average residual strain (GaAs, claim range) | 0.000002–0.0001 dimensionless | GaAs |
average residual strain (C-doped GaAs, higher range, claim 14/17) | 0.00007–0.0001 dimensionless | GaAs |
resistivity (C-doped semi-insulating GaAs, claim range) | 10000000–500000000 Ohm·cm | GaAs |
carrier concentration (Si-doped GaAs, claim range) | 10000000000000000–10000000000000000000 cm⁻³ | GaAs |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 1.5 mm | — |
Thickness | ≥ 1.25 mm | — |
Table 5
Table 5 summarizes a c rac k defect rati o in manufacturing of the
p. 29
Table 6
Table 5 summarizes a c rac k defect rati o in manufacturing of the substrate and Table 6 summarizes a c rac k defect rati o in gr o wth of the epita
p. 30
Table 7
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.34.35.1624.2676.1731.2721.svg 0.15 0.357 Chemistry Black and white Table 7 summarizes a c rac k defect rati o in manufacturing of the
p. 30
Table 8
57 Chemistry Black and white Table 7 summarizes a c rac k defect rati o in manufacturing of the substrate and Table 8 summarizes a c rac k defect rati o in gr o wth of the epita
p. 30
Table 9
Table 9 summarizes a c rac k defect ratio in manufacturing of the s
p. 31
Table 10
Table 9 summarizes a c rac k defect ratio in manufacturing of the substrate and Table 10 summarizes a c rac k defect ratio in gr o wth of the epitax
p. 31
Table 11
SVG 16630183.
p. 32
Table 12
Table I l summarizes a crack defect ratio in manufacturing of the substrate and Table 12 summarizes a crack defect ratio in growth of the epitaxial
p. 32
Table 13
G 16630183.01-10-2020.K₅₈KIMNKRXEAPX0.SPEC.38.31.1602.2422.1709.2467.svg 0.15 0.357 Chemistry Black and white Table 13 summarizes a rac k defect rati o in manufacturing of the su
p. 32
Table 14
357 Chemistry Black and white Table 13 summarizes a rac k defect rati o in manufacturing of the substrate and Table 14 summarizes a c rac k defect rati o in gr o wth of the epita
p. 32
Table 17
SVG 16630183.
p. 36
Table 18
Table 1 7 summarizes a c rac k defect ratio in manufacturing of the substrate and Table 18 summarizes a c rac k defect ratio in gr o wth of the epitax
p. 35
Table 19
Table 19 summarizes a crack defect ratio in manufacturing of the sub
p. 36
Table 20
Table 19 summarizes a crack defect ratio in manufacturing of the substrate and Table 20 summarizes a crack defect ratio in growth of the epitaxial
p. 36