Patent
US 10,815,586OF INVENTION
Yukio ISHIKAWA
US
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Patent
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Patent
US 10,815,586Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium-arsenide-based compound semiconductor crystal comprising a straight body portion having a cylindrical shape, wherein the straight body portion has a diameter of more than or equal to 110 mm and has a length of more than or equal to 350 mm and less than or equal to 400 mm, and the straight body portion has a first end surface and a second end surface having a higher specific resistance than a specific resistance of the first end surface, a specific resistance R i o at the first end surface side is more than or equal to x 2 1.0 x 10-c m and less than or equal to 1.4x 10 8 2-c m, a specific resistance R 2 0 at the second end surface side is more than or equal to 8 1.8x 1 Q-cm and less than or equal to 2.8 x 10 8 c-e m, and a ratio R 2 0/Rio of the specific resistance R 2 0 to the specific resistance Rio is more than or equal to 1 and less than or equal to 2. a nd wher ein a carbon concentration C m n at the first end surface side is more than or equal to 4.5 x101 atoms/cm 3 and less than or e qual to 5.6x 10' atoms/cm-, a carbon conce ntrat ion C (at the secon d en d sur f ace side is m ore than or e q ual to 6.6 x 101 5 atoms/cm 3 and less than o r e q ual to 8.7x1() 15 ato ms/c mi and a ratio C o/1 C w of the carbo n concentration C 3 ~ to the carbon concentration C mo is more than or eq ual to 1 and less than or eq ual to 2. and wherein a boron concentration B at the first end surface side is more than or equal to 5.0,10 16 atoms/cm 3 and less than or eq ual to 6. OX 10 16 atoms/cm 3 a boron concentration B 2 0 at the second end surface side is more than or eq ual to 6.8x 10 1 6 atoms/cm 3 and less than or equal to 8.6 x 10 16 atoms/cm 3. and a ratio B 2 0/Bio_ of the boron concent ra tion B 20 to the boron concentration Bi is more than or equal to 1 and less than or equal to 2. Currently amended
The gallium-arsenide-based compound semiconductor crystal according to claim 1, wherein a ratio E₂ o/Elo of an etching pit density E 20 at the second end surface side to an etching pit density E, 0 at the first end surface side is more than or equal to 0.8 and less than or equal to 1.2. Previously presented
The gallium-arsenide-based compound semiconductor crystal according to claim 1, wherein the ratio C 20/C 10 is less than or equal to 1.5. New
Claims 2-3. Canceled
Canceled
A wafer group comprising a plurality of wafers each formed from a straight body portion of a gallium-arsenide-based compound semiconductor crystal, the straight body portion having a cylindrical shape, the straight body portion having a diameter of more than or equal to 110 mm and having a length of more than or equal to 350 mm and less than or equal to 400 mm, each of the plurality of wafers having a diameter of more than or equal to 110 mm and a thickness of more than or equal to 500 m and less than or equal to 800 m, wherein the wafer group includes a first wafer having a lowest specific resistance and a second wafer having a highest specific resistance, a specific resistance R i in the first wafer is more than or equal to x l.O x l08 Q-cm and less than or equal to 1.4 x10 8 0-cm, a specific resistance R 2 in the second wafer is more than or equal to 8 I.8 x 10 8 2-cm and less than or equal to 2.8 x 10 8 Q-cm, and a ratio R 2/R I of the specific resistance R 2 to the specific resistance R 1 is more than or equal to 1 and less than or equal to 2, and wherein a carbon concentration C i in the first wa te r is more than or equal to 4,5x 10 atoms/cm3 and less than or eq ual to 5.6 x10 15 atoms/cm 3. a carbon concentration C 2 in the secon d wafe r is more than or e qual to 6.6 x 1015 atom s/cm' and lests than or equal to 8. 7x 1015 ato mns/cm 3. and a ra tio C 2/C l of the carbon concentration C₂ to the carbon concentration C i is m ore than o r equal to 1I and less than or equ al to 2. and w herein a boron concentration Bi in the first wafer is more t han or e qua l to 5.0 x 10 atorn s/c mf and less than or equ al to 6. 0x 10 i atom s/cm', a boron concentration B₂ in the second wafer is more than or equal to 6.8 x 10 16 atoms/cm 3 and less than or equal to 8.6 x 10 1 6 atoms/cm 3. and a ratio B₂/B₁ of the boron concentration B₂ to the boron concentration B 1 is more than or equal to I and less than or equal to 2. Currently amended
The wafer group according to claim 5, wherein a ratio E 2/E 1 of an etching pit density E 2 in the second wafer to an etching pit density E in the first wafer is more than or equal to 0.8 and less than or equal to 1.2. Previously presented
The wafer group according to claim 5, wherein the ratio C 2/C 1 is less than or equal to 1.5. New
Claims 6-7. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
wafer group
Materials described outside the worked examples.
gallium-arsenide-based compound semiconductor crystal
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific resistance R10 at first end surface side (crystal) | 100000000–140000000 Ω·cm | GaAs |
specific resistance R20 at second end surface side (crystal) | 180000000–280000000 Ω·cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,815,586Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium-arsenide-based compound semiconductor crystal comprising a straight body portion having a cylindrical shape, wherein the straight body portion has a diameter of more than or equal to 110 mm and has a length of more than or equal to 350 mm and less than or equal to 400 mm, and the straight body portion has a first end surface and a second end surface having a higher specific resistance than a specific resistance of the first end surface, a specific resistance R i o at the first end surface side is more than or equal to x 2 1.0 x 10-c m and less than or equal to 1.4x 10 8 2-c m, a specific resistance R 2 0 at the second end surface side is more than or equal to 8 1.8x 1 Q-cm and less than or equal to 2.8 x 10 8 c-e m, and a ratio R 2 0/Rio of the specific resistance R 2 0 to the specific resistance Rio is more than or equal to 1 and less than or equal to 2. a nd wher ein a carbon concentration C m n at the first end surface side is more than or equal to 4.5 x101 atoms/cm 3 and less than or e qual to 5.6x 10' atoms/cm-, a carbon conce ntrat ion C (at the secon d en d sur f ace side is m ore than or e q ual to 6.6 x 101 5 atoms/cm 3 and less than o r e q ual to 8.7x1() 15 ato ms/c mi and a ratio C o/1 C w of the carbo n concentration C 3 ~ to the carbon concentration C mo is more than or eq ual to 1 and less than or eq ual to 2. and wherein a boron concentration B at the first end surface side is more than or equal to 5.0,10 16 atoms/cm 3 and less than or eq ual to 6. OX 10 16 atoms/cm 3 a boron concentration B 2 0 at the second end surface side is more than or eq ual to 6.8x 10 1 6 atoms/cm 3 and less than or equal to 8.6 x 10 16 atoms/cm 3. and a ratio B 2 0/Bio_ of the boron concent ra tion B 20 to the boron concentration Bi is more than or equal to 1 and less than or equal to 2. Currently amended
The gallium-arsenide-based compound semiconductor crystal according to claim 1, wherein a ratio E₂ o/Elo of an etching pit density E 20 at the second end surface side to an etching pit density E, 0 at the first end surface side is more than or equal to 0.8 and less than or equal to 1.2. Previously presented
The gallium-arsenide-based compound semiconductor crystal according to claim 1, wherein the ratio C 20/C 10 is less than or equal to 1.5. New
Claims 2-3. Canceled
Canceled
A wafer group comprising a plurality of wafers each formed from a straight body portion of a gallium-arsenide-based compound semiconductor crystal, the straight body portion having a cylindrical shape, the straight body portion having a diameter of more than or equal to 110 mm and having a length of more than or equal to 350 mm and less than or equal to 400 mm, each of the plurality of wafers having a diameter of more than or equal to 110 mm and a thickness of more than or equal to 500 m and less than or equal to 800 m, wherein the wafer group includes a first wafer having a lowest specific resistance and a second wafer having a highest specific resistance, a specific resistance R i in the first wafer is more than or equal to x l.O x l08 Q-cm and less than or equal to 1.4 x10 8 0-cm, a specific resistance R 2 in the second wafer is more than or equal to 8 I.8 x 10 8 2-cm and less than or equal to 2.8 x 10 8 Q-cm, and a ratio R 2/R I of the specific resistance R 2 to the specific resistance R 1 is more than or equal to 1 and less than or equal to 2, and wherein a carbon concentration C i in the first wa te r is more than or equal to 4,5x 10 atoms/cm3 and less than or eq ual to 5.6 x10 15 atoms/cm 3. a carbon concentration C 2 in the secon d wafe r is more than or e qual to 6.6 x 1015 atom s/cm' and lests than or equal to 8. 7x 1015 ato mns/cm 3. and a ra tio C 2/C l of the carbon concentration C₂ to the carbon concentration C i is m ore than o r equal to 1I and less than or equ al to 2. and w herein a boron concentration Bi in the first wafer is more t han or e qua l to 5.0 x 10 atorn s/c mf and less than or equ al to 6. 0x 10 i atom s/cm', a boron concentration B₂ in the second wafer is more than or equal to 6.8 x 10 16 atoms/cm 3 and less than or equal to 8.6 x 10 1 6 atoms/cm 3. and a ratio B₂/B₁ of the boron concentration B₂ to the boron concentration B 1 is more than or equal to I and less than or equal to 2. Currently amended
The wafer group according to claim 5, wherein a ratio E 2/E 1 of an etching pit density E 2 in the second wafer to an etching pit density E in the first wafer is more than or equal to 0.8 and less than or equal to 1.2. Previously presented
The wafer group according to claim 5, wherein the ratio C 2/C 1 is less than or equal to 1.5. New
Claims 6-7. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
wafer group
Materials described outside the worked examples.
gallium-arsenide-based compound semiconductor crystal
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific resistance R10 at first end surface side (crystal) | 100000000–140000000 Ω·cm | GaAs |
specific resistance R20 at second end surface side (crystal) | 180000000–280000000 Ω·cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,815,586Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium-arsenide-based compound semiconductor crystal comprising a straight body portion having a cylindrical shape, wherein the straight body portion has a diameter of more than or equal to 110 mm and has a length of more than or equal to 350 mm and less than or equal to 400 mm, and the straight body portion has a first end surface and a second end surface having a higher specific resistance than a specific resistance of the first end surface, a specific resistance R i o at the first end surface side is more than or equal to x 2 1.0 x 10-c m and less than or equal to 1.4x 10 8 2-c m, a specific resistance R 2 0 at the second end surface side is more than or equal to 8 1.8x 1 Q-cm and less than or equal to 2.8 x 10 8 c-e m, and a ratio R 2 0/Rio of the specific resistance R 2 0 to the specific resistance Rio is more than or equal to 1 and less than or equal to 2. a nd wher ein a carbon concentration C m n at the first end surface side is more than or equal to 4.5 x101 atoms/cm 3 and less than or e qual to 5.6x 10' atoms/cm-, a carbon conce ntrat ion C (at the secon d en d sur f ace side is m ore than or e q ual to 6.6 x 101 5 atoms/cm 3 and less than o r e q ual to 8.7x1() 15 ato ms/c mi and a ratio C o/1 C w of the carbo n concentration C 3 ~ to the carbon concentration C mo is more than or eq ual to 1 and less than or eq ual to 2. and wherein a boron concentration B at the first end surface side is more than or equal to 5.0,10 16 atoms/cm 3 and less than or eq ual to 6. OX 10 16 atoms/cm 3 a boron concentration B 2 0 at the second end surface side is more than or eq ual to 6.8x 10 1 6 atoms/cm 3 and less than or equal to 8.6 x 10 16 atoms/cm 3. and a ratio B 2 0/Bio_ of the boron concent ra tion B 20 to the boron concentration Bi is more than or equal to 1 and less than or equal to 2. Currently amended
The gallium-arsenide-based compound semiconductor crystal according to claim 1, wherein a ratio E₂ o/Elo of an etching pit density E 20 at the second end surface side to an etching pit density E, 0 at the first end surface side is more than or equal to 0.8 and less than or equal to 1.2. Previously presented
The gallium-arsenide-based compound semiconductor crystal according to claim 1, wherein the ratio C 20/C 10 is less than or equal to 1.5. New
Claims 2-3. Canceled
Canceled
A wafer group comprising a plurality of wafers each formed from a straight body portion of a gallium-arsenide-based compound semiconductor crystal, the straight body portion having a cylindrical shape, the straight body portion having a diameter of more than or equal to 110 mm and having a length of more than or equal to 350 mm and less than or equal to 400 mm, each of the plurality of wafers having a diameter of more than or equal to 110 mm and a thickness of more than or equal to 500 m and less than or equal to 800 m, wherein the wafer group includes a first wafer having a lowest specific resistance and a second wafer having a highest specific resistance, a specific resistance R i in the first wafer is more than or equal to x l.O x l08 Q-cm and less than or equal to 1.4 x10 8 0-cm, a specific resistance R 2 in the second wafer is more than or equal to 8 I.8 x 10 8 2-cm and less than or equal to 2.8 x 10 8 Q-cm, and a ratio R 2/R I of the specific resistance R 2 to the specific resistance R 1 is more than or equal to 1 and less than or equal to 2, and wherein a carbon concentration C i in the first wa te r is more than or equal to 4,5x 10 atoms/cm3 and less than or eq ual to 5.6 x10 15 atoms/cm 3. a carbon concentration C 2 in the secon d wafe r is more than or e qual to 6.6 x 1015 atom s/cm' and lests than or equal to 8. 7x 1015 ato mns/cm 3. and a ra tio C 2/C l of the carbon concentration C₂ to the carbon concentration C i is m ore than o r equal to 1I and less than or equ al to 2. and w herein a boron concentration Bi in the first wafer is more t han or e qua l to 5.0 x 10 atorn s/c mf and less than or equ al to 6. 0x 10 i atom s/cm', a boron concentration B₂ in the second wafer is more than or equal to 6.8 x 10 16 atoms/cm 3 and less than or equal to 8.6 x 10 1 6 atoms/cm 3. and a ratio B₂/B₁ of the boron concentration B₂ to the boron concentration B 1 is more than or equal to I and less than or equal to 2. Currently amended
The wafer group according to claim 5, wherein a ratio E 2/E 1 of an etching pit density E 2 in the second wafer to an etching pit density E in the first wafer is more than or equal to 0.8 and less than or equal to 1.2. Previously presented
The wafer group according to claim 5, wherein the ratio C 2/C 1 is less than or equal to 1.5. New
Claims 6-7. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
wafer group
Materials described outside the worked examples.
gallium-arsenide-based compound semiconductor crystal
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific resistance R10 at first end surface side (crystal) | 100000000–140000000 Ω·cm | GaAs |
specific resistance R20 at second end surface side (crystal) | 180000000–280000000 Ω·cm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,815,586Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium-arsenide-based compound semiconductor crystal comprising a straight body portion having a cylindrical shape, wherein the straight body portion has a diameter of more than or equal to 110 mm and has a length of more than or equal to 350 mm and less than or equal to 400 mm, and the straight body portion has a first end surface and a second end surface having a higher specific resistance than a specific resistance of the first end surface, a specific resistance R i o at the first end surface side is more than or equal to x 2 1.0 x 10-c m and less than or equal to 1.4x 10 8 2-c m, a specific resistance R 2 0 at the second end surface side is more than or equal to 8 1.8x 1 Q-cm and less than or equal to 2.8 x 10 8 c-e m, and a ratio R 2 0/Rio of the specific resistance R 2 0 to the specific resistance Rio is more than or equal to 1 and less than or equal to 2. a nd wher ein a carbon concentration C m n at the first end surface side is more than or equal to 4.5 x101 atoms/cm 3 and less than or e qual to 5.6x 10' atoms/cm-, a carbon conce ntrat ion C (at the secon d en d sur f ace side is m ore than or e q ual to 6.6 x 101 5 atoms/cm 3 and less than o r e q ual to 8.7x1() 15 ato ms/c mi and a ratio C o/1 C w of the carbo n concentration C 3 ~ to the carbon concentration C mo is more than or eq ual to 1 and less than or eq ual to 2. and wherein a boron concentration B at the first end surface side is more than or equal to 5.0,10 16 atoms/cm 3 and less than or eq ual to 6. OX 10 16 atoms/cm 3 a boron concentration B 2 0 at the second end surface side is more than or eq ual to 6.8x 10 1 6 atoms/cm 3 and less than or equal to 8.6 x 10 16 atoms/cm 3. and a ratio B 2 0/Bio_ of the boron concent ra tion B 20 to the boron concentration Bi is more than or equal to 1 and less than or equal to 2. Currently amended
The gallium-arsenide-based compound semiconductor crystal according to claim 1, wherein a ratio E₂ o/Elo of an etching pit density E 20 at the second end surface side to an etching pit density E, 0 at the first end surface side is more than or equal to 0.8 and less than or equal to 1.2. Previously presented
The gallium-arsenide-based compound semiconductor crystal according to claim 1, wherein the ratio C 20/C 10 is less than or equal to 1.5. New
Claims 2-3. Canceled
Canceled
A wafer group comprising a plurality of wafers each formed from a straight body portion of a gallium-arsenide-based compound semiconductor crystal, the straight body portion having a cylindrical shape, the straight body portion having a diameter of more than or equal to 110 mm and having a length of more than or equal to 350 mm and less than or equal to 400 mm, each of the plurality of wafers having a diameter of more than or equal to 110 mm and a thickness of more than or equal to 500 m and less than or equal to 800 m, wherein the wafer group includes a first wafer having a lowest specific resistance and a second wafer having a highest specific resistance, a specific resistance R i in the first wafer is more than or equal to x l.O x l08 Q-cm and less than or equal to 1.4 x10 8 0-cm, a specific resistance R 2 in the second wafer is more than or equal to 8 I.8 x 10 8 2-cm and less than or equal to 2.8 x 10 8 Q-cm, and a ratio R 2/R I of the specific resistance R 2 to the specific resistance R 1 is more than or equal to 1 and less than or equal to 2, and wherein a carbon concentration C i in the first wa te r is more than or equal to 4,5x 10 atoms/cm3 and less than or eq ual to 5.6 x10 15 atoms/cm 3. a carbon concentration C 2 in the secon d wafe r is more than or e qual to 6.6 x 1015 atom s/cm' and lests than or equal to 8. 7x 1015 ato mns/cm 3. and a ra tio C 2/C l of the carbon concentration C₂ to the carbon concentration C i is m ore than o r equal to 1I and less than or equ al to 2. and w herein a boron concentration Bi in the first wafer is more t han or e qua l to 5.0 x 10 atorn s/c mf and less than or equ al to 6. 0x 10 i atom s/cm', a boron concentration B₂ in the second wafer is more than or equal to 6.8 x 10 16 atoms/cm 3 and less than or equal to 8.6 x 10 1 6 atoms/cm 3. and a ratio B₂/B₁ of the boron concentration B₂ to the boron concentration B 1 is more than or equal to I and less than or equal to 2. Currently amended
The wafer group according to claim 5, wherein a ratio E 2/E 1 of an etching pit density E 2 in the second wafer to an etching pit density E in the first wafer is more than or equal to 0.8 and less than or equal to 1.2. Previously presented
The wafer group according to claim 5, wherein the ratio C 2/C 1 is less than or equal to 1.5. New
Claims 6-7. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
wafer group
Materials described outside the worked examples.
gallium-arsenide-based compound semiconductor crystal
GaAs
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
specific resistance R10 at first end surface side (crystal) | 100000000–140000000 Ω·cm | GaAs |
specific resistance R20 at second end surface side (crystal) | 180000000–280000000 Ω·cm |
Related documents with shared materials, methods, properties, or citations.
GaAs |
specific resistance R1 in first wafer (lowest specific resistance wafer) | 100000000–140000000 Ω·cm | GaAs |
specific resistance R2 in second wafer (highest specific resistance wafer) | 180000000–280000000 Ω·cm | GaAs |
Thickness | 100–400 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 400 mm | — |
Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits
GaAs |
specific resistance R1 in first wafer (lowest specific resistance wafer) | 100000000–140000000 Ω·cm | GaAs |
specific resistance R2 in second wafer (highest specific resistance wafer) | 180000000–280000000 Ω·cm | GaAs |
Thickness | 100–400 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 400 mm | — |
Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits
GaAs |
specific resistance R1 in first wafer (lowest specific resistance wafer) | 100000000–140000000 Ω·cm | GaAs |
specific resistance R2 in second wafer (highest specific resistance wafer) | 180000000–280000000 Ω·cm | GaAs |
Thickness | 100–400 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 400 mm | — |
Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits
GaAs |
specific resistance R1 in first wafer (lowest specific resistance wafer) | 100000000–140000000 Ω·cm | GaAs |
specific resistance R2 in second wafer (highest specific resistance wafer) | 180000000–280000000 Ω·cm | GaAs |
Thickness | 100–400 mm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≥ 400 mm | — |
Quantifying and mitigating optical surface loss in suspended GaAs photonic integrated circuits