Patent
US 11,142,824METHOD OF PRODUCING THIN LAYER OF LARGE AREA TRANSITION METAL DICHALCOGENIDES MOS₂ AND OTHERS
Anil U. Mane
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,142,824Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows one embodiment of a transition metal thin layer deposited on a seed layer prior to sulphurization. [0013]
FIG. 2 is a graph of mass gain per cycle during first three cycles of Mo deposition at 200 0C as measured by quartz crystal microbalance ("Q C M"). [0014]
FIG. 3A is an X-ray photoelectron spectroscopy ("XPS") analysis of Al2p and Mo3d spectra for 1, 2 and 3 cycles of Mo deposited on A 120 3/Si, and
FIGS. 4A-4 B are Transmission electron microscopy images of MoS₂ made using (3 cycles Mo ALD + sulphurized) on high aspect ratio trench substrate.
FIG. 5 A is a Raman Spectroscopy of 2, 3, 6, and 8 cycles of Mo sulphuri s ed to MoS₂ on Si, and
FIGS. 6A-6 B are X-ray photoelectron spectra of 3 cycles of MoS₂ sample.
FIG. 7A shows UV-Vis transmittance spectra for 3 cycles and 8 cycles of Mo converted MoS₂ films on quartz substrates, and
FIG. 8B is calculated density, thickness, and roughness, for 1, 2, and 3 cycles of Mo deposited on fix A l2O₃//Si. [0020] Reference is made to the accompanying …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a substrate comprising: depositing a seed la y er on the substrate, the seed la y er comprising AlMoF: forming an ultra-thin transition metal layer by: performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100 0 C and 300 ° C, and performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50 0 C and 300 ° C, and forming a transition metal dichalcogenide by sulphurization of the ultra-thin transition metal layer by exposure to a sulfur precursor. Currently amended
The method of claim 1, wherein sulphurization further comprises thermally annealing the ultra-thin transition metal layer at a sulphurization temperature. Original
The method of claim 1, wherein the transition metal precursor for a atomic layer deposition is MoF 6 and, the precursor for b atomic layer deposition is Si₂H 6 Siq& and the sulfur precursor is H₂S further wherein the transition metal dichalcogenide is MoS2. Currently amended
The method of claim 1, wherein the a cycles each comprise: a 1 second dose followed by a gas purge. Original
The method of claim [[1]] 2, wherein the b cycle depositions each comprise: a 1 second dose followed by a 1 second gas purge. Currently amended
The method of claim 5, wherein sulphurization further comprises exposing the transition metal layer to H₂S. Original
The method of claim 5, wherein the ultra-thin transition metal layer is deposited on a substrate before sulphurization. Original
The method of claim [[1]] 2, wherein the sulphurization temperature is greater than 300 ° C and less than 600 °C. Currently amended
Canceled
The method of claim 9, wherein the seed layer comprises a material different from the ultrathin transition metal layer and the substrate and wherein the seed layer is lnm thick. Original
A method of preparing a substrate comprising: depositing a seed layer on the substrate, the seed layer comprising AlMoF: forming a transition metal layer of x atomic layers by repeating x times a atomic layer deposition process having the steps of: performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100 ° C and 300 ° C, and performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50 ° C and 300 ° C, and converting the transition metal layer to dichalcogenide by sulphurization of the transition metal layer at a temperature of at least greater than or equal to 300 ° C by exposure to at least one dose of a sulfur precursor, wherein x is between 1 and 8. Currently amended
The method of claim 11, wherein the transition metal precursor is MoF 6 and Si₂H 6 ri,- further, the transition metal dichalcogenide is M o S2, and the sulfur precursor is H₂S. Currently amended
The method of claim 11, wherein the a cycles each comprise: a 1 second dose followed by a gas purge. Original
The method of claim 11, wherein the b cycle depositions each comprise: a 1 second dose followed by a second gas purge. Original
The method of claim 11, wherein the sulfur precursor comprises H₂S. Currently amended
The method of claim 11, wherein the sulphurization temperature is between 300 0 C and 600 0 C. Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
ultra-thin TMD film on substrate
Materials described outside the worked examples.
AlMoF seed layer
AlMoF
transition metal precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 10–1000 Torr | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,142,824Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows one embodiment of a transition metal thin layer deposited on a seed layer prior to sulphurization. [0013]
FIG. 2 is a graph of mass gain per cycle during first three cycles of Mo deposition at 200 0C as measured by quartz crystal microbalance ("Q C M"). [0014]
FIG. 3A is an X-ray photoelectron spectroscopy ("XPS") analysis of Al2p and Mo3d spectra for 1, 2 and 3 cycles of Mo deposited on A 120 3/Si, and
FIGS. 4A-4 B are Transmission electron microscopy images of MoS₂ made using (3 cycles Mo ALD + sulphurized) on high aspect ratio trench substrate.
FIG. 5 A is a Raman Spectroscopy of 2, 3, 6, and 8 cycles of Mo sulphuri s ed to MoS₂ on Si, and
FIGS. 6A-6 B are X-ray photoelectron spectra of 3 cycles of MoS₂ sample.
FIG. 7A shows UV-Vis transmittance spectra for 3 cycles and 8 cycles of Mo converted MoS₂ films on quartz substrates, and
FIG. 8B is calculated density, thickness, and roughness, for 1, 2, and 3 cycles of Mo deposited on fix A l2O₃//Si. [0020] Reference is made to the accompanying …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a substrate comprising: depositing a seed la y er on the substrate, the seed la y er comprising AlMoF: forming an ultra-thin transition metal layer by: performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100 0 C and 300 ° C, and performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50 0 C and 300 ° C, and forming a transition metal dichalcogenide by sulphurization of the ultra-thin transition metal layer by exposure to a sulfur precursor. Currently amended
The method of claim 1, wherein sulphurization further comprises thermally annealing the ultra-thin transition metal layer at a sulphurization temperature. Original
The method of claim 1, wherein the transition metal precursor for a atomic layer deposition is MoF 6 and, the precursor for b atomic layer deposition is Si₂H 6 Siq& and the sulfur precursor is H₂S further wherein the transition metal dichalcogenide is MoS2. Currently amended
The method of claim 1, wherein the a cycles each comprise: a 1 second dose followed by a gas purge. Original
The method of claim [[1]] 2, wherein the b cycle depositions each comprise: a 1 second dose followed by a 1 second gas purge. Currently amended
The method of claim 5, wherein sulphurization further comprises exposing the transition metal layer to H₂S. Original
The method of claim 5, wherein the ultra-thin transition metal layer is deposited on a substrate before sulphurization. Original
The method of claim [[1]] 2, wherein the sulphurization temperature is greater than 300 ° C and less than 600 °C. Currently amended
Canceled
The method of claim 9, wherein the seed layer comprises a material different from the ultrathin transition metal layer and the substrate and wherein the seed layer is lnm thick. Original
A method of preparing a substrate comprising: depositing a seed layer on the substrate, the seed layer comprising AlMoF: forming a transition metal layer of x atomic layers by repeating x times a atomic layer deposition process having the steps of: performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100 ° C and 300 ° C, and performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50 ° C and 300 ° C, and converting the transition metal layer to dichalcogenide by sulphurization of the transition metal layer at a temperature of at least greater than or equal to 300 ° C by exposure to at least one dose of a sulfur precursor, wherein x is between 1 and 8. Currently amended
The method of claim 11, wherein the transition metal precursor is MoF 6 and Si₂H 6 ri,- further, the transition metal dichalcogenide is M o S2, and the sulfur precursor is H₂S. Currently amended
The method of claim 11, wherein the a cycles each comprise: a 1 second dose followed by a gas purge. Original
The method of claim 11, wherein the b cycle depositions each comprise: a 1 second dose followed by a second gas purge. Original
The method of claim 11, wherein the sulfur precursor comprises H₂S. Currently amended
The method of claim 11, wherein the sulphurization temperature is between 300 0 C and 600 0 C. Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
ultra-thin TMD film on substrate
Materials described outside the worked examples.
AlMoF seed layer
AlMoF
transition metal precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 10–1000 Torr | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,142,824Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows one embodiment of a transition metal thin layer deposited on a seed layer prior to sulphurization. [0013]
FIG. 2 is a graph of mass gain per cycle during first three cycles of Mo deposition at 200 0C as measured by quartz crystal microbalance ("Q C M"). [0014]
FIG. 3A is an X-ray photoelectron spectroscopy ("XPS") analysis of Al2p and Mo3d spectra for 1, 2 and 3 cycles of Mo deposited on A 120 3/Si, and
FIGS. 4A-4 B are Transmission electron microscopy images of MoS₂ made using (3 cycles Mo ALD + sulphurized) on high aspect ratio trench substrate.
FIG. 5 A is a Raman Spectroscopy of 2, 3, 6, and 8 cycles of Mo sulphuri s ed to MoS₂ on Si, and
FIGS. 6A-6 B are X-ray photoelectron spectra of 3 cycles of MoS₂ sample.
FIG. 7A shows UV-Vis transmittance spectra for 3 cycles and 8 cycles of Mo converted MoS₂ films on quartz substrates, and
FIG. 8B is calculated density, thickness, and roughness, for 1, 2, and 3 cycles of Mo deposited on fix A l2O₃//Si. [0020] Reference is made to the accompanying …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a substrate comprising: depositing a seed la y er on the substrate, the seed la y er comprising AlMoF: forming an ultra-thin transition metal layer by: performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100 0 C and 300 ° C, and performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50 0 C and 300 ° C, and forming a transition metal dichalcogenide by sulphurization of the ultra-thin transition metal layer by exposure to a sulfur precursor. Currently amended
The method of claim 1, wherein sulphurization further comprises thermally annealing the ultra-thin transition metal layer at a sulphurization temperature. Original
The method of claim 1, wherein the transition metal precursor for a atomic layer deposition is MoF 6 and, the precursor for b atomic layer deposition is Si₂H 6 Siq& and the sulfur precursor is H₂S further wherein the transition metal dichalcogenide is MoS2. Currently amended
The method of claim 1, wherein the a cycles each comprise: a 1 second dose followed by a gas purge. Original
The method of claim [[1]] 2, wherein the b cycle depositions each comprise: a 1 second dose followed by a 1 second gas purge. Currently amended
The method of claim 5, wherein sulphurization further comprises exposing the transition metal layer to H₂S. Original
The method of claim 5, wherein the ultra-thin transition metal layer is deposited on a substrate before sulphurization. Original
The method of claim [[1]] 2, wherein the sulphurization temperature is greater than 300 ° C and less than 600 °C. Currently amended
Canceled
The method of claim 9, wherein the seed layer comprises a material different from the ultrathin transition metal layer and the substrate and wherein the seed layer is lnm thick. Original
A method of preparing a substrate comprising: depositing a seed layer on the substrate, the seed layer comprising AlMoF: forming a transition metal layer of x atomic layers by repeating x times a atomic layer deposition process having the steps of: performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100 ° C and 300 ° C, and performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50 ° C and 300 ° C, and converting the transition metal layer to dichalcogenide by sulphurization of the transition metal layer at a temperature of at least greater than or equal to 300 ° C by exposure to at least one dose of a sulfur precursor, wherein x is between 1 and 8. Currently amended
The method of claim 11, wherein the transition metal precursor is MoF 6 and Si₂H 6 ri,- further, the transition metal dichalcogenide is M o S2, and the sulfur precursor is H₂S. Currently amended
The method of claim 11, wherein the a cycles each comprise: a 1 second dose followed by a gas purge. Original
The method of claim 11, wherein the b cycle depositions each comprise: a 1 second dose followed by a second gas purge. Original
The method of claim 11, wherein the sulfur precursor comprises H₂S. Currently amended
The method of claim 11, wherein the sulphurization temperature is between 300 0 C and 600 0 C. Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
ultra-thin TMD film on substrate
Materials described outside the worked examples.
AlMoF seed layer
AlMoF
transition metal precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 10–1000 Torr | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,142,824Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows one embodiment of a transition metal thin layer deposited on a seed layer prior to sulphurization. [0013]
FIG. 2 is a graph of mass gain per cycle during first three cycles of Mo deposition at 200 0C as measured by quartz crystal microbalance ("Q C M"). [0014]
FIG. 3A is an X-ray photoelectron spectroscopy ("XPS") analysis of Al2p and Mo3d spectra for 1, 2 and 3 cycles of Mo deposited on A 120 3/Si, and
FIGS. 4A-4 B are Transmission electron microscopy images of MoS₂ made using (3 cycles Mo ALD + sulphurized) on high aspect ratio trench substrate.
FIG. 5 A is a Raman Spectroscopy of 2, 3, 6, and 8 cycles of Mo sulphuri s ed to MoS₂ on Si, and
FIGS. 6A-6 B are X-ray photoelectron spectra of 3 cycles of MoS₂ sample.
FIG. 7A shows UV-Vis transmittance spectra for 3 cycles and 8 cycles of Mo converted MoS₂ films on quartz substrates, and
FIG. 8B is calculated density, thickness, and roughness, for 1, 2, and 3 cycles of Mo deposited on fix A l2O₃//Si. [0020] Reference is made to the accompanying …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of preparing a substrate comprising: depositing a seed la y er on the substrate, the seed la y er comprising AlMoF: forming an ultra-thin transition metal layer by: performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100 0 C and 300 ° C, and performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50 0 C and 300 ° C, and forming a transition metal dichalcogenide by sulphurization of the ultra-thin transition metal layer by exposure to a sulfur precursor. Currently amended
The method of claim 1, wherein sulphurization further comprises thermally annealing the ultra-thin transition metal layer at a sulphurization temperature. Original
The method of claim 1, wherein the transition metal precursor for a atomic layer deposition is MoF 6 and, the precursor for b atomic layer deposition is Si₂H 6 Siq& and the sulfur precursor is H₂S further wherein the transition metal dichalcogenide is MoS2. Currently amended
The method of claim 1, wherein the a cycles each comprise: a 1 second dose followed by a gas purge. Original
The method of claim [[1]] 2, wherein the b cycle depositions each comprise: a 1 second dose followed by a 1 second gas purge. Currently amended
The method of claim 5, wherein sulphurization further comprises exposing the transition metal layer to H₂S. Original
The method of claim 5, wherein the ultra-thin transition metal layer is deposited on a substrate before sulphurization. Original
The method of claim [[1]] 2, wherein the sulphurization temperature is greater than 300 ° C and less than 600 °C. Currently amended
Canceled
The method of claim 9, wherein the seed layer comprises a material different from the ultrathin transition metal layer and the substrate and wherein the seed layer is lnm thick. Original
A method of preparing a substrate comprising: depositing a seed layer on the substrate, the seed layer comprising AlMoF: forming a transition metal layer of x atomic layers by repeating x times a atomic layer deposition process having the steps of: performing a atomic layer deposition cycles of transition metal precursor at a first deposition temperature between 100 ° C and 300 ° C, and performing b atomic layer deposition cycles of a second precursor at a second deposition temperature between 50 ° C and 300 ° C, and converting the transition metal layer to dichalcogenide by sulphurization of the transition metal layer at a temperature of at least greater than or equal to 300 ° C by exposure to at least one dose of a sulfur precursor, wherein x is between 1 and 8. Currently amended
The method of claim 11, wherein the transition metal precursor is MoF 6 and Si₂H 6 ri,- further, the transition metal dichalcogenide is M o S2, and the sulfur precursor is H₂S. Currently amended
The method of claim 11, wherein the a cycles each comprise: a 1 second dose followed by a gas purge. Original
The method of claim 11, wherein the b cycle depositions each comprise: a 1 second dose followed by a second gas purge. Original
The method of claim 11, wherein the sulfur precursor comprises H₂S. Currently amended
The method of claim 11, wherein the sulphurization temperature is between 300 0 C and 600 0 C. Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
ultra-thin TMD film on substrate
Materials described outside the worked examples.
AlMoF seed layer
AlMoF
transition metal precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 10–1000 Torr | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
transition metal dichalcogenide
molybdenum hexafluoride
MoF₆
disilane
Si₂H₆
hydrogen sulfide
H₂S
molybdenum disulfide
MoS₂
molybdenum metal (ultra-thin ALD film)
Mo
tungsten hexafluoride
WF₆
tungsten metal (ALD film)
W
elemental sulfur
S
dimethylsulfide
(CH₃)2S
bis(trimethylsilyl)sulfide
((CH₃)3Si)2S
silicon substrate
Si
MgO substrate
MgO
alumina substrate
Al₂O₃
quartz substrate
SiO₂
| — |
Pressure | 0.01–10 Torr | — |
Thickness | 5–50 nm | — |
— | 1.3–1.5 eV | — |
Temperature | 100–300 °C | — |
Temperature | 50–300 °C | — |
Temperature | ≤ 600 °C | — |
Temperature | ≥ 300 °C | — |
Pressure | ≥ 1.5 Torr | — |
transition metal dichalcogenide
molybdenum hexafluoride
MoF₆
disilane
Si₂H₆
hydrogen sulfide
H₂S
molybdenum disulfide
MoS₂
molybdenum metal (ultra-thin ALD film)
Mo
tungsten hexafluoride
WF₆
tungsten metal (ALD film)
W
elemental sulfur
S
dimethylsulfide
(CH₃)2S
bis(trimethylsilyl)sulfide
((CH₃)3Si)2S
silicon substrate
Si
MgO substrate
MgO
alumina substrate
Al₂O₃
quartz substrate
SiO₂
| — |
Pressure | 0.01–10 Torr | — |
Thickness | 5–50 nm | — |
— | 1.3–1.5 eV | — |
Temperature | 100–300 °C | — |
Temperature | 50–300 °C | — |
Temperature | ≤ 600 °C | — |
Temperature | ≥ 300 °C | — |
Pressure | ≥ 1.5 Torr | — |
transition metal dichalcogenide
molybdenum hexafluoride
MoF₆
disilane
Si₂H₆
hydrogen sulfide
H₂S
molybdenum disulfide
MoS₂
molybdenum metal (ultra-thin ALD film)
Mo
tungsten hexafluoride
WF₆
tungsten metal (ALD film)
W
elemental sulfur
S
dimethylsulfide
(CH₃)2S
bis(trimethylsilyl)sulfide
((CH₃)3Si)2S
silicon substrate
Si
MgO substrate
MgO
alumina substrate
Al₂O₃
quartz substrate
SiO₂
| — |
Pressure | 0.01–10 Torr | — |
Thickness | 5–50 nm | — |
— | 1.3–1.5 eV | — |
Temperature | 100–300 °C | — |
Temperature | 50–300 °C | — |
Temperature | ≤ 600 °C | — |
Temperature | ≥ 300 °C | — |
Pressure | ≥ 1.5 Torr | — |
transition metal dichalcogenide
molybdenum hexafluoride
MoF₆
disilane
Si₂H₆
hydrogen sulfide
H₂S
molybdenum disulfide
MoS₂
molybdenum metal (ultra-thin ALD film)
Mo
tungsten hexafluoride
WF₆
tungsten metal (ALD film)
W
elemental sulfur
S
dimethylsulfide
(CH₃)2S
bis(trimethylsilyl)sulfide
((CH₃)3Si)2S
silicon substrate
Si
MgO substrate
MgO
alumina substrate
Al₂O₃
quartz substrate
SiO₂
| — |
Pressure | 0.01–10 Torr | — |
Thickness | 5–50 nm | — |
— | 1.3–1.5 eV | — |
Temperature | 100–300 °C | — |
Temperature | 50–300 °C | — |
Temperature | ≤ 600 °C | — |
Temperature | ≥ 300 °C | — |
Pressure | ≥ 1.5 Torr | — |