Patent
US 11,022,486MoS₂ BASED PHOTOSENSOR FOR DETECTING BOTH LIGHT WAVELENGTH AND INTENSITY
Yu Tong, Chunxiang Zhu
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,022,486Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. Canceled
The instrument of claim 4 4, wherein the 2D transition metal dichalcogenide layers comprise molybdenum disulfide (MoS₂) layers. Currently amended
The instrument of claim 2, wherein the MoS₂ layers are MoS₂ nanoflake layers Currently amended
An instrument comprising: a photosensor that includes a substrate including an insulating layer, one or more layers of a two-dimensional (2 D) transition metal dichalcogenide disposed upon the substrate, a drain ele c trode and a source electr ode di spos ed upon the substrate and arranged laterally with respect to the layers of 2D transition metal dichalcogenide lay ers, and a ba c kgate elec trode formed beneath the layers of 2D transition metal dichalcogenide layers and the insulating layer, and an electrical parameter analyzer coupled to the drain electrode, the electrical parameter analyzer configured to measure a photoresponse in terms of drain current verses time of the photosensor and utilize components of the photoresponse to determine both intensity and wavelength of light incident upon the photosensor. Currently amended
The instrument of claim 4, wherein the 2 photoresponse includes a fast response component and a slow response component. Currently amended
The instrument of claim 4 4, wherein the substrate comprises: a silicon dioxide (SiO 2) insulating layer; and a doped silicon (Si) substrate. Currently amended
The instrument of claim 4 4, wherein the drain electrode and the source electrode each comprise gold (Au) electrodes. Currently amended
The instrument of claim 4 4, wherein the backgate electrode is formed by silver (Ag) deposited within areas of the substrate. Currently amended
The instrument of claim 4-913, wherein the 2D transition metal dichalcogenide layers comprise molybdenum disulfide (M o S 2) layers. Currently amended
Canceled
An instrument comprising: a photosensor having a substrate, one or more layers of a two-dimensional (2 D) transition metal dichalcogenide disposed upon the substrate, and a plurality o f ele c trode s in c luding a drain ele ctrode; and an electrical parameter analyzer coupled to the drain electrode, the electrical pa r ameter analy z er c onfigu r ed to measure a photoresponse in terms of drain current ver ses time of the photosensor, wherein the photoresponse includes a fast response component and a slow response component, and the electrical parameter analyzer is configured to determine both intensity and wavelength of light incident upon the photosensor by using the fast response component alone to determine the intensity of the light and the slow response component to determine the wavelength of the light. Currently amended
The instrument of claim 13, wherein an interva l of time that defines a cut off between the fast response component and the slow response component is 1 second. Original
The instrument of claim 13-1, wherein the substrate comprises: a silicon dioxide (Si₀ 2) insulating layer; and a doped silicon (Si) substrate. Currently amended
The instrument of claim --1 3, wherein the plurality of electrodes further comprise a source electrode and a back g ate electrode. Currently amended
A method of operating a photosensor that includes one or more layers of a two-dimensional (2 D) transition metal dichalcogenide, the method comprising: measuring a photoresponse provided by the one or more layers of the 2D transition metal dichalcogenide in terms of current verses time, detecting a fast response component and a slow response component of the photoresponse; bas ed on the fast response component alone, determinin g intensity of light s incident on the photosensor; and ba s ed on the slow response component determining a wavelength of the light incident on the photosensor. Original
The method of claim 17, wherein the 2D molybdenum disulfide (MoS₂) layers. Original
The method of claim 17, wherein the photosensor (FET) with a back-gate configuration. Original
The method of claim 17, wherein an interval response component and the slow response component transition metal dichalcogenide layers comprise is structured as a field effect transistor of time that defines a cut off 2 between the fast is 1 second. Original
Layer stacks claimed or described, ordered top of device to substrate.
MoS₂ based photosensor/field-effect transistor with back-gate configuration
Materials described outside the worked examples.
molybdenum disulfide
MoS₂
2D transition metal dichalcogenide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
SiO2 insulating layer thickness | 285 nm | SiO₂ |
fast response component cutoff time |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,022,486Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. Canceled
The instrument of claim 4 4, wherein the 2D transition metal dichalcogenide layers comprise molybdenum disulfide (MoS₂) layers. Currently amended
The instrument of claim 2, wherein the MoS₂ layers are MoS₂ nanoflake layers Currently amended
An instrument comprising: a photosensor that includes a substrate including an insulating layer, one or more layers of a two-dimensional (2 D) transition metal dichalcogenide disposed upon the substrate, a drain ele c trode and a source electr ode di spos ed upon the substrate and arranged laterally with respect to the layers of 2D transition metal dichalcogenide lay ers, and a ba c kgate elec trode formed beneath the layers of 2D transition metal dichalcogenide layers and the insulating layer, and an electrical parameter analyzer coupled to the drain electrode, the electrical parameter analyzer configured to measure a photoresponse in terms of drain current verses time of the photosensor and utilize components of the photoresponse to determine both intensity and wavelength of light incident upon the photosensor. Currently amended
The instrument of claim 4, wherein the 2 photoresponse includes a fast response component and a slow response component. Currently amended
The instrument of claim 4 4, wherein the substrate comprises: a silicon dioxide (SiO 2) insulating layer; and a doped silicon (Si) substrate. Currently amended
The instrument of claim 4 4, wherein the drain electrode and the source electrode each comprise gold (Au) electrodes. Currently amended
The instrument of claim 4 4, wherein the backgate electrode is formed by silver (Ag) deposited within areas of the substrate. Currently amended
The instrument of claim 4-913, wherein the 2D transition metal dichalcogenide layers comprise molybdenum disulfide (M o S 2) layers. Currently amended
Canceled
An instrument comprising: a photosensor having a substrate, one or more layers of a two-dimensional (2 D) transition metal dichalcogenide disposed upon the substrate, and a plurality o f ele c trode s in c luding a drain ele ctrode; and an electrical parameter analyzer coupled to the drain electrode, the electrical pa r ameter analy z er c onfigu r ed to measure a photoresponse in terms of drain current ver ses time of the photosensor, wherein the photoresponse includes a fast response component and a slow response component, and the electrical parameter analyzer is configured to determine both intensity and wavelength of light incident upon the photosensor by using the fast response component alone to determine the intensity of the light and the slow response component to determine the wavelength of the light. Currently amended
The instrument of claim 13, wherein an interva l of time that defines a cut off between the fast response component and the slow response component is 1 second. Original
The instrument of claim 13-1, wherein the substrate comprises: a silicon dioxide (Si₀ 2) insulating layer; and a doped silicon (Si) substrate. Currently amended
The instrument of claim --1 3, wherein the plurality of electrodes further comprise a source electrode and a back g ate electrode. Currently amended
A method of operating a photosensor that includes one or more layers of a two-dimensional (2 D) transition metal dichalcogenide, the method comprising: measuring a photoresponse provided by the one or more layers of the 2D transition metal dichalcogenide in terms of current verses time, detecting a fast response component and a slow response component of the photoresponse; bas ed on the fast response component alone, determinin g intensity of light s incident on the photosensor; and ba s ed on the slow response component determining a wavelength of the light incident on the photosensor. Original
The method of claim 17, wherein the 2D molybdenum disulfide (MoS₂) layers. Original
The method of claim 17, wherein the photosensor (FET) with a back-gate configuration. Original
The method of claim 17, wherein an interval response component and the slow response component transition metal dichalcogenide layers comprise is structured as a field effect transistor of time that defines a cut off 2 between the fast is 1 second. Original
Layer stacks claimed or described, ordered top of device to substrate.
MoS₂ based photosensor/field-effect transistor with back-gate configuration
Materials described outside the worked examples.
molybdenum disulfide
MoS₂
2D transition metal dichalcogenide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
SiO2 insulating layer thickness | 285 nm | SiO₂ |
fast response component cutoff time |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,022,486Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. Canceled
The instrument of claim 4 4, wherein the 2D transition metal dichalcogenide layers comprise molybdenum disulfide (MoS₂) layers. Currently amended
The instrument of claim 2, wherein the MoS₂ layers are MoS₂ nanoflake layers Currently amended
An instrument comprising: a photosensor that includes a substrate including an insulating layer, one or more layers of a two-dimensional (2 D) transition metal dichalcogenide disposed upon the substrate, a drain ele c trode and a source electr ode di spos ed upon the substrate and arranged laterally with respect to the layers of 2D transition metal dichalcogenide lay ers, and a ba c kgate elec trode formed beneath the layers of 2D transition metal dichalcogenide layers and the insulating layer, and an electrical parameter analyzer coupled to the drain electrode, the electrical parameter analyzer configured to measure a photoresponse in terms of drain current verses time of the photosensor and utilize components of the photoresponse to determine both intensity and wavelength of light incident upon the photosensor. Currently amended
The instrument of claim 4, wherein the 2 photoresponse includes a fast response component and a slow response component. Currently amended
The instrument of claim 4 4, wherein the substrate comprises: a silicon dioxide (SiO 2) insulating layer; and a doped silicon (Si) substrate. Currently amended
The instrument of claim 4 4, wherein the drain electrode and the source electrode each comprise gold (Au) electrodes. Currently amended
The instrument of claim 4 4, wherein the backgate electrode is formed by silver (Ag) deposited within areas of the substrate. Currently amended
The instrument of claim 4-913, wherein the 2D transition metal dichalcogenide layers comprise molybdenum disulfide (M o S 2) layers. Currently amended
Canceled
An instrument comprising: a photosensor having a substrate, one or more layers of a two-dimensional (2 D) transition metal dichalcogenide disposed upon the substrate, and a plurality o f ele c trode s in c luding a drain ele ctrode; and an electrical parameter analyzer coupled to the drain electrode, the electrical pa r ameter analy z er c onfigu r ed to measure a photoresponse in terms of drain current ver ses time of the photosensor, wherein the photoresponse includes a fast response component and a slow response component, and the electrical parameter analyzer is configured to determine both intensity and wavelength of light incident upon the photosensor by using the fast response component alone to determine the intensity of the light and the slow response component to determine the wavelength of the light. Currently amended
The instrument of claim 13, wherein an interva l of time that defines a cut off between the fast response component and the slow response component is 1 second. Original
The instrument of claim 13-1, wherein the substrate comprises: a silicon dioxide (Si₀ 2) insulating layer; and a doped silicon (Si) substrate. Currently amended
The instrument of claim --1 3, wherein the plurality of electrodes further comprise a source electrode and a back g ate electrode. Currently amended
A method of operating a photosensor that includes one or more layers of a two-dimensional (2 D) transition metal dichalcogenide, the method comprising: measuring a photoresponse provided by the one or more layers of the 2D transition metal dichalcogenide in terms of current verses time, detecting a fast response component and a slow response component of the photoresponse; bas ed on the fast response component alone, determinin g intensity of light s incident on the photosensor; and ba s ed on the slow response component determining a wavelength of the light incident on the photosensor. Original
The method of claim 17, wherein the 2D molybdenum disulfide (MoS₂) layers. Original
The method of claim 17, wherein the photosensor (FET) with a back-gate configuration. Original
The method of claim 17, wherein an interval response component and the slow response component transition metal dichalcogenide layers comprise is structured as a field effect transistor of time that defines a cut off 2 between the fast is 1 second. Original
Layer stacks claimed or described, ordered top of device to substrate.
MoS₂ based photosensor/field-effect transistor with back-gate configuration
Materials described outside the worked examples.
molybdenum disulfide
MoS₂
2D transition metal dichalcogenide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
SiO2 insulating layer thickness | 285 nm | SiO₂ |
fast response component cutoff time |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,022,486Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
. Canceled
The instrument of claim 4 4, wherein the 2D transition metal dichalcogenide layers comprise molybdenum disulfide (MoS₂) layers. Currently amended
The instrument of claim 2, wherein the MoS₂ layers are MoS₂ nanoflake layers Currently amended
An instrument comprising: a photosensor that includes a substrate including an insulating layer, one or more layers of a two-dimensional (2 D) transition metal dichalcogenide disposed upon the substrate, a drain ele c trode and a source electr ode di spos ed upon the substrate and arranged laterally with respect to the layers of 2D transition metal dichalcogenide lay ers, and a ba c kgate elec trode formed beneath the layers of 2D transition metal dichalcogenide layers and the insulating layer, and an electrical parameter analyzer coupled to the drain electrode, the electrical parameter analyzer configured to measure a photoresponse in terms of drain current verses time of the photosensor and utilize components of the photoresponse to determine both intensity and wavelength of light incident upon the photosensor. Currently amended
The instrument of claim 4, wherein the 2 photoresponse includes a fast response component and a slow response component. Currently amended
The instrument of claim 4 4, wherein the substrate comprises: a silicon dioxide (SiO 2) insulating layer; and a doped silicon (Si) substrate. Currently amended
The instrument of claim 4 4, wherein the drain electrode and the source electrode each comprise gold (Au) electrodes. Currently amended
The instrument of claim 4 4, wherein the backgate electrode is formed by silver (Ag) deposited within areas of the substrate. Currently amended
The instrument of claim 4-913, wherein the 2D transition metal dichalcogenide layers comprise molybdenum disulfide (M o S 2) layers. Currently amended
Canceled
An instrument comprising: a photosensor having a substrate, one or more layers of a two-dimensional (2 D) transition metal dichalcogenide disposed upon the substrate, and a plurality o f ele c trode s in c luding a drain ele ctrode; and an electrical parameter analyzer coupled to the drain electrode, the electrical pa r ameter analy z er c onfigu r ed to measure a photoresponse in terms of drain current ver ses time of the photosensor, wherein the photoresponse includes a fast response component and a slow response component, and the electrical parameter analyzer is configured to determine both intensity and wavelength of light incident upon the photosensor by using the fast response component alone to determine the intensity of the light and the slow response component to determine the wavelength of the light. Currently amended
The instrument of claim 13, wherein an interva l of time that defines a cut off between the fast response component and the slow response component is 1 second. Original
The instrument of claim 13-1, wherein the substrate comprises: a silicon dioxide (Si₀ 2) insulating layer; and a doped silicon (Si) substrate. Currently amended
The instrument of claim --1 3, wherein the plurality of electrodes further comprise a source electrode and a back g ate electrode. Currently amended
A method of operating a photosensor that includes one or more layers of a two-dimensional (2 D) transition metal dichalcogenide, the method comprising: measuring a photoresponse provided by the one or more layers of the 2D transition metal dichalcogenide in terms of current verses time, detecting a fast response component and a slow response component of the photoresponse; bas ed on the fast response component alone, determinin g intensity of light s incident on the photosensor; and ba s ed on the slow response component determining a wavelength of the light incident on the photosensor. Original
The method of claim 17, wherein the 2D molybdenum disulfide (MoS₂) layers. Original
The method of claim 17, wherein the photosensor (FET) with a back-gate configuration. Original
The method of claim 17, wherein an interval response component and the slow response component transition metal dichalcogenide layers comprise is structured as a field effect transistor of time that defines a cut off 2 between the fast is 1 second. Original
Layer stacks claimed or described, ordered top of device to substrate.
MoS₂ based photosensor/field-effect transistor with back-gate configuration
Materials described outside the worked examples.
molybdenum disulfide
MoS₂
2D transition metal dichalcogenide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
SiO2 insulating layer thickness | 285 nm | SiO₂ |
fast response component cutoff time |
Related documents with shared materials, methods, properties, or citations.
silicon dioxide insulating layer
SiO₂
doped silicon substrate
Si
gold electrodes
Au
silver
Ag
polymethylmethacrylate
alumina wire
| 1 second |
MoS₂ |
white light irradiation time for IDS-VGS measurement | 500 ms | MoS₂ |
laser power (red light, 650 nm) for photoresponse measurement | — | MoS₂ |
white light intensity for sensor recovery experiment | 1.27 mW/cm2 | MoS₂ |
O2 partial pressure (low) for photoresponse vs O2 concentration measurement | 0.000068 mBar | MoS₂ |
O2 partial pressure (high) for photoresponse vs O2 concentration measurement | 0.0000015 mBar | MoS₂ |
Thickness | ≤ 450 nm | — |
Thickness | ≤ 650 nm | — |
silicon dioxide insulating layer
SiO₂
doped silicon substrate
Si
gold electrodes
Au
silver
Ag
polymethylmethacrylate
alumina wire
| 1 second |
MoS₂ |
white light irradiation time for IDS-VGS measurement | 500 ms | MoS₂ |
laser power (red light, 650 nm) for photoresponse measurement | — | MoS₂ |
white light intensity for sensor recovery experiment | 1.27 mW/cm2 | MoS₂ |
O2 partial pressure (low) for photoresponse vs O2 concentration measurement | 0.000068 mBar | MoS₂ |
O2 partial pressure (high) for photoresponse vs O2 concentration measurement | 0.0000015 mBar | MoS₂ |
Thickness | ≤ 450 nm | — |
Thickness | ≤ 650 nm | — |
silicon dioxide insulating layer
SiO₂
doped silicon substrate
Si
gold electrodes
Au
silver
Ag
polymethylmethacrylate
alumina wire
| 1 second |
MoS₂ |
white light irradiation time for IDS-VGS measurement | 500 ms | MoS₂ |
laser power (red light, 650 nm) for photoresponse measurement | — | MoS₂ |
white light intensity for sensor recovery experiment | 1.27 mW/cm2 | MoS₂ |
O2 partial pressure (low) for photoresponse vs O2 concentration measurement | 0.000068 mBar | MoS₂ |
O2 partial pressure (high) for photoresponse vs O2 concentration measurement | 0.0000015 mBar | MoS₂ |
Thickness | ≤ 450 nm | — |
Thickness | ≤ 650 nm | — |
silicon dioxide insulating layer
SiO₂
doped silicon substrate
Si
gold electrodes
Au
silver
Ag
polymethylmethacrylate
alumina wire
| 1 second |
MoS₂ |
white light irradiation time for IDS-VGS measurement | 500 ms | MoS₂ |
laser power (red light, 650 nm) for photoresponse measurement | — | MoS₂ |
white light intensity for sensor recovery experiment | 1.27 mW/cm2 | MoS₂ |
O2 partial pressure (low) for photoresponse vs O2 concentration measurement | 0.000068 mBar | MoS₂ |
O2 partial pressure (high) for photoresponse vs O2 concentration measurement | 0.0000015 mBar | MoS₂ |
Thickness | ≤ 450 nm | — |
Thickness | ≤ 650 nm | — |