Patent
US 9,181,100METHOD OF TRANSFERRING A GRAPHENE FILM
Yon-Hua TZENG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,181,100Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/534,129 Attorney Docket No.: TZEN₃₀₀₆/REF/LES LISTING AND AMENDMENT OF THE CLAIMS 1. (Cu rr ently Amended) A method for transferring a graphene film, comprising the following steps: (A) providing a carrier, wherein the carrier has a first surface and a second surface, and a first graphene film is formed on the first surface of the carrier, wherein the structure of the first graphene film has one or more layers of monolayer graphene; (B) disposing a patterned protection layer on the second surface of the ca rr ier; (C) patterning the ca rr ier to expose the first graphene film, wherein the pattern of the patterned protection layer is replicated onto the ca rr ier; and (D) transfe rr ing the first graphene film from the pattern carrier onto a target substrate with a suspension solution, wherein the suspension solution is selected from water, alcohol, acetone, or deionized water, and wherein step (D) for transfe rr ing comprises the following steps: (D₁) providing the suspension solution, wherein the target substrate is disposed therein; (D₂) suspending the patterned carrier with the first graphene film in the suspension solution; and (D₃) removing the suspension solution and removing the patterned carrier to transfer the first graphene onto the target substrate.
The method for transferring a graphene film of claim 1, wherein the step (D) comprises the following steps: (D₁) providing the suspension solution, and disposing the patterned carrier with the first graphene film in the suspension solution, wherein the patterned carrier suspends on the suspension solution; 2 Application No.: 13/534,129 Attorney Docket No.: TZEN₃₀₀₆/REF/LES (D₂) lifting up the patterned carrier to scoop up the first graphene film from the suspension solution; and (D₃) disposing the first graphene film on the target substrate. withdrawn
The method for transfe rr ing a graphene film of claim 1, wherein the step (A) further comprises the following steps: (A₁) providing a carrier and a ca rr ier board, wherein a first graphene film and a second graphene film are formed respectively on the first surface and the second surface of the carrier, and a buffer layer is disposed on the surface of the carrier board; (A₂) stacking the carrier on the carrier board, and the buffer layer, the first graphene film, the carrier, and the second graphene film are stacked on the carrier board sequentially; (A₃) removing the second graphene film to expose the second surface of the carrier.
The method for transfe rr ing a graphene film of claim 1, further comprising a step (B') after the step (B): cleaning the second surface of the carrier.
The method for transfe rr ing a graphene film of claim 1, wherein the patterning process of the step (C) comprises: patterning the carrier and the first graphene film on the patterned protection layer.
The method for transferring a graphene film of claim 1, further comprising a step (E) after the step (D): repeating the steps (A)-(D) to form a plurality of graphene films on the target substrate.
The method for transferring a graphene film of claim 1, wherein the carrier is selected from the group consisting of copper, nickel, and combinations thereof.
The method for transferring a graphene film of claim 1, wherein in the step (D), the first graphene film being transferred on the target substrate includes portion of its surface to be bare graphene alone.
. canceled
A method for transfe rr ing a graphene film, comprising the following steps: (A) providing a carrier, wherein the carrier has a first surface and a second surface, and a first graphene film is formed on the first surface of the carrier; (B) disposing the ca rr ier in a carrier-removing solution to remove the carrier, and the first graphene film suspends on the carrier-removing solution; (C) replacing the carrier-removing solution with a suspension solution, wherein the first graphene film suspends on the suspension solution; (D) separating the first graphene film from the suspension solution; and (E) transfe rr ing the first graphene film onto a target substrate. withdrawn
The method for transferring a graphene film of claim 18, wherein the step (A) further comprises the following steps: (A₁) providing a carrier, wherein a first graphene film and a second graphene film are formed respectively on the first surface and the second surface of the carrier; and (A₂) disposing the ca rr ier on a graphene-removing solution, wherein the first graphene film is exposed to the su rr oundings, and the second graphene film contacts the graphene- removing solution to remove the second graphene film. withdrawn
The method for transferring a graphene film of claim 18, wherein the carr ier-removing solution is selected from a group consisting of an ammonium persulfate solution, a ferric chloride solution, a phosphoric acid solution, a sulfuric acid solution, or combinations thereof: withdrawn
The method for transferring a graphene film of claim 18, wherein the carr ier is selected from a group consisting of copper, nickel, or combinations thereof. withdrawn
The method for transferring a graphene film of claim 18, further comprising a step (A') before the step (B): forming a marker on the first graphene film; and wherein the step (D) further comprises: disposing a target substrate into the suspension solution, and determining a relative position between the first graphene film and the target substrate by the marker. withdrawn
The method for transferring a graphene film of claim 18, wherein the step (D) comprises scooping up the first graphene film from the suspension solution. withdrawn
. 6 canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials3 process steps
A copper carrier (25 µm thick) with graphene films grown by thermal CVD on both surfaces is mounted on a glass carrier board with a dust-free paper buffer layer. A patterned protection layer (tape) is applied to the second graphene film. The second graphene film is etched with H₂O₂/HNO3. The carrier is then etched in 4% (NH₄)2S₂O₈ solution to release the first graphene film. The graphene is washed in deionized water and suspended in deionized water (suspension solution). A target substrate is placed in the suspension solution, aligned to the graphene, and the solution is suctioned out to deposit the graphene onto the target substrate. The patterned protection layer and remaining patterned carrier are removed.
2 materials1 process step
Same procedure as Example 1 except that after washing in deionized water, the first graphene film suspended in the deionized water is lifted (scooped) from the suspension solution using the patterned protection layer and patterned carrier as the force origin, without touching the graphene film, and transferred onto the target substrate.
2 materials1 process step
Same procedure as Example 1 except that before etching, the first graphene film and carrier are washed with 5% HCl solution to remove impurities. After carrier etching, the first graphene film and etched carrier are also washed with 5% HCl solution to facilitate surface treatment.
4 materials2 process steps
A copper carrier with first graphene film grown by thermal CVD at 1000°C in CH₄/H₂ mixture at ≤1 torr pressure on the first surface only (no patterned protection layer used). The carrier is etched in 4% (NH₄)2S₂O₈ solution. The carrier-etching solution suspended with graphene is diluted with deionized water multiple times to form the suspension solution. The target substrate is placed in the suspension solution, aligned to the graphene film, and the graphene adheres to the target substrate completing the transfer.
1 material
Same as Example 4 except that the first graphene film is marked with ink to facilitate alignment between the graphene film and the target substrate after carrier etching, exploiting the transparent nature of graphene.
Materials described outside the worked examples.
ferric chloride solution
FeCl₃
phosphoric acid solution
H₃PO₄
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,181,100Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/534,129 Attorney Docket No.: TZEN₃₀₀₆/REF/LES LISTING AND AMENDMENT OF THE CLAIMS 1. (Cu rr ently Amended) A method for transferring a graphene film, comprising the following steps: (A) providing a carrier, wherein the carrier has a first surface and a second surface, and a first graphene film is formed on the first surface of the carrier, wherein the structure of the first graphene film has one or more layers of monolayer graphene; (B) disposing a patterned protection layer on the second surface of the ca rr ier; (C) patterning the ca rr ier to expose the first graphene film, wherein the pattern of the patterned protection layer is replicated onto the ca rr ier; and (D) transfe rr ing the first graphene film from the pattern carrier onto a target substrate with a suspension solution, wherein the suspension solution is selected from water, alcohol, acetone, or deionized water, and wherein step (D) for transfe rr ing comprises the following steps: (D₁) providing the suspension solution, wherein the target substrate is disposed therein; (D₂) suspending the patterned carrier with the first graphene film in the suspension solution; and (D₃) removing the suspension solution and removing the patterned carrier to transfer the first graphene onto the target substrate.
The method for transferring a graphene film of claim 1, wherein the step (D) comprises the following steps: (D₁) providing the suspension solution, and disposing the patterned carrier with the first graphene film in the suspension solution, wherein the patterned carrier suspends on the suspension solution; 2 Application No.: 13/534,129 Attorney Docket No.: TZEN₃₀₀₆/REF/LES (D₂) lifting up the patterned carrier to scoop up the first graphene film from the suspension solution; and (D₃) disposing the first graphene film on the target substrate. withdrawn
The method for transfe rr ing a graphene film of claim 1, wherein the step (A) further comprises the following steps: (A₁) providing a carrier and a ca rr ier board, wherein a first graphene film and a second graphene film are formed respectively on the first surface and the second surface of the carrier, and a buffer layer is disposed on the surface of the carrier board; (A₂) stacking the carrier on the carrier board, and the buffer layer, the first graphene film, the carrier, and the second graphene film are stacked on the carrier board sequentially; (A₃) removing the second graphene film to expose the second surface of the carrier.
The method for transfe rr ing a graphene film of claim 1, further comprising a step (B') after the step (B): cleaning the second surface of the carrier.
The method for transfe rr ing a graphene film of claim 1, wherein the patterning process of the step (C) comprises: patterning the carrier and the first graphene film on the patterned protection layer.
The method for transferring a graphene film of claim 1, further comprising a step (E) after the step (D): repeating the steps (A)-(D) to form a plurality of graphene films on the target substrate.
The method for transferring a graphene film of claim 1, wherein the carrier is selected from the group consisting of copper, nickel, and combinations thereof.
The method for transferring a graphene film of claim 1, wherein in the step (D), the first graphene film being transferred on the target substrate includes portion of its surface to be bare graphene alone.
. canceled
A method for transfe rr ing a graphene film, comprising the following steps: (A) providing a carrier, wherein the carrier has a first surface and a second surface, and a first graphene film is formed on the first surface of the carrier; (B) disposing the ca rr ier in a carrier-removing solution to remove the carrier, and the first graphene film suspends on the carrier-removing solution; (C) replacing the carrier-removing solution with a suspension solution, wherein the first graphene film suspends on the suspension solution; (D) separating the first graphene film from the suspension solution; and (E) transfe rr ing the first graphene film onto a target substrate. withdrawn
The method for transferring a graphene film of claim 18, wherein the step (A) further comprises the following steps: (A₁) providing a carrier, wherein a first graphene film and a second graphene film are formed respectively on the first surface and the second surface of the carrier; and (A₂) disposing the ca rr ier on a graphene-removing solution, wherein the first graphene film is exposed to the su rr oundings, and the second graphene film contacts the graphene- removing solution to remove the second graphene film. withdrawn
The method for transferring a graphene film of claim 18, wherein the carr ier-removing solution is selected from a group consisting of an ammonium persulfate solution, a ferric chloride solution, a phosphoric acid solution, a sulfuric acid solution, or combinations thereof: withdrawn
The method for transferring a graphene film of claim 18, wherein the carr ier is selected from a group consisting of copper, nickel, or combinations thereof. withdrawn
The method for transferring a graphene film of claim 18, further comprising a step (A') before the step (B): forming a marker on the first graphene film; and wherein the step (D) further comprises: disposing a target substrate into the suspension solution, and determining a relative position between the first graphene film and the target substrate by the marker. withdrawn
The method for transferring a graphene film of claim 18, wherein the step (D) comprises scooping up the first graphene film from the suspension solution. withdrawn
. 6 canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials3 process steps
A copper carrier (25 µm thick) with graphene films grown by thermal CVD on both surfaces is mounted on a glass carrier board with a dust-free paper buffer layer. A patterned protection layer (tape) is applied to the second graphene film. The second graphene film is etched with H₂O₂/HNO3. The carrier is then etched in 4% (NH₄)2S₂O₈ solution to release the first graphene film. The graphene is washed in deionized water and suspended in deionized water (suspension solution). A target substrate is placed in the suspension solution, aligned to the graphene, and the solution is suctioned out to deposit the graphene onto the target substrate. The patterned protection layer and remaining patterned carrier are removed.
2 materials1 process step
Same procedure as Example 1 except that after washing in deionized water, the first graphene film suspended in the deionized water is lifted (scooped) from the suspension solution using the patterned protection layer and patterned carrier as the force origin, without touching the graphene film, and transferred onto the target substrate.
2 materials1 process step
Same procedure as Example 1 except that before etching, the first graphene film and carrier are washed with 5% HCl solution to remove impurities. After carrier etching, the first graphene film and etched carrier are also washed with 5% HCl solution to facilitate surface treatment.
4 materials2 process steps
A copper carrier with first graphene film grown by thermal CVD at 1000°C in CH₄/H₂ mixture at ≤1 torr pressure on the first surface only (no patterned protection layer used). The carrier is etched in 4% (NH₄)2S₂O₈ solution. The carrier-etching solution suspended with graphene is diluted with deionized water multiple times to form the suspension solution. The target substrate is placed in the suspension solution, aligned to the graphene film, and the graphene adheres to the target substrate completing the transfer.
1 material
Same as Example 4 except that the first graphene film is marked with ink to facilitate alignment between the graphene film and the target substrate after carrier etching, exploiting the transparent nature of graphene.
Materials described outside the worked examples.
ferric chloride solution
FeCl₃
phosphoric acid solution
H₃PO₄
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,181,100Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/534,129 Attorney Docket No.: TZEN₃₀₀₆/REF/LES LISTING AND AMENDMENT OF THE CLAIMS 1. (Cu rr ently Amended) A method for transferring a graphene film, comprising the following steps: (A) providing a carrier, wherein the carrier has a first surface and a second surface, and a first graphene film is formed on the first surface of the carrier, wherein the structure of the first graphene film has one or more layers of monolayer graphene; (B) disposing a patterned protection layer on the second surface of the ca rr ier; (C) patterning the ca rr ier to expose the first graphene film, wherein the pattern of the patterned protection layer is replicated onto the ca rr ier; and (D) transfe rr ing the first graphene film from the pattern carrier onto a target substrate with a suspension solution, wherein the suspension solution is selected from water, alcohol, acetone, or deionized water, and wherein step (D) for transfe rr ing comprises the following steps: (D₁) providing the suspension solution, wherein the target substrate is disposed therein; (D₂) suspending the patterned carrier with the first graphene film in the suspension solution; and (D₃) removing the suspension solution and removing the patterned carrier to transfer the first graphene onto the target substrate.
The method for transferring a graphene film of claim 1, wherein the step (D) comprises the following steps: (D₁) providing the suspension solution, and disposing the patterned carrier with the first graphene film in the suspension solution, wherein the patterned carrier suspends on the suspension solution; 2 Application No.: 13/534,129 Attorney Docket No.: TZEN₃₀₀₆/REF/LES (D₂) lifting up the patterned carrier to scoop up the first graphene film from the suspension solution; and (D₃) disposing the first graphene film on the target substrate. withdrawn
The method for transfe rr ing a graphene film of claim 1, wherein the step (A) further comprises the following steps: (A₁) providing a carrier and a ca rr ier board, wherein a first graphene film and a second graphene film are formed respectively on the first surface and the second surface of the carrier, and a buffer layer is disposed on the surface of the carrier board; (A₂) stacking the carrier on the carrier board, and the buffer layer, the first graphene film, the carrier, and the second graphene film are stacked on the carrier board sequentially; (A₃) removing the second graphene film to expose the second surface of the carrier.
The method for transfe rr ing a graphene film of claim 1, further comprising a step (B') after the step (B): cleaning the second surface of the carrier.
The method for transfe rr ing a graphene film of claim 1, wherein the patterning process of the step (C) comprises: patterning the carrier and the first graphene film on the patterned protection layer.
The method for transferring a graphene film of claim 1, further comprising a step (E) after the step (D): repeating the steps (A)-(D) to form a plurality of graphene films on the target substrate.
The method for transferring a graphene film of claim 1, wherein the carrier is selected from the group consisting of copper, nickel, and combinations thereof.
The method for transferring a graphene film of claim 1, wherein in the step (D), the first graphene film being transferred on the target substrate includes portion of its surface to be bare graphene alone.
. canceled
A method for transfe rr ing a graphene film, comprising the following steps: (A) providing a carrier, wherein the carrier has a first surface and a second surface, and a first graphene film is formed on the first surface of the carrier; (B) disposing the ca rr ier in a carrier-removing solution to remove the carrier, and the first graphene film suspends on the carrier-removing solution; (C) replacing the carrier-removing solution with a suspension solution, wherein the first graphene film suspends on the suspension solution; (D) separating the first graphene film from the suspension solution; and (E) transfe rr ing the first graphene film onto a target substrate. withdrawn
The method for transferring a graphene film of claim 18, wherein the step (A) further comprises the following steps: (A₁) providing a carrier, wherein a first graphene film and a second graphene film are formed respectively on the first surface and the second surface of the carrier; and (A₂) disposing the ca rr ier on a graphene-removing solution, wherein the first graphene film is exposed to the su rr oundings, and the second graphene film contacts the graphene- removing solution to remove the second graphene film. withdrawn
The method for transferring a graphene film of claim 18, wherein the carr ier-removing solution is selected from a group consisting of an ammonium persulfate solution, a ferric chloride solution, a phosphoric acid solution, a sulfuric acid solution, or combinations thereof: withdrawn
The method for transferring a graphene film of claim 18, wherein the carr ier is selected from a group consisting of copper, nickel, or combinations thereof. withdrawn
The method for transferring a graphene film of claim 18, further comprising a step (A') before the step (B): forming a marker on the first graphene film; and wherein the step (D) further comprises: disposing a target substrate into the suspension solution, and determining a relative position between the first graphene film and the target substrate by the marker. withdrawn
The method for transferring a graphene film of claim 18, wherein the step (D) comprises scooping up the first graphene film from the suspension solution. withdrawn
. 6 canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials3 process steps
A copper carrier (25 µm thick) with graphene films grown by thermal CVD on both surfaces is mounted on a glass carrier board with a dust-free paper buffer layer. A patterned protection layer (tape) is applied to the second graphene film. The second graphene film is etched with H₂O₂/HNO3. The carrier is then etched in 4% (NH₄)2S₂O₈ solution to release the first graphene film. The graphene is washed in deionized water and suspended in deionized water (suspension solution). A target substrate is placed in the suspension solution, aligned to the graphene, and the solution is suctioned out to deposit the graphene onto the target substrate. The patterned protection layer and remaining patterned carrier are removed.
2 materials1 process step
Same procedure as Example 1 except that after washing in deionized water, the first graphene film suspended in the deionized water is lifted (scooped) from the suspension solution using the patterned protection layer and patterned carrier as the force origin, without touching the graphene film, and transferred onto the target substrate.
2 materials1 process step
Same procedure as Example 1 except that before etching, the first graphene film and carrier are washed with 5% HCl solution to remove impurities. After carrier etching, the first graphene film and etched carrier are also washed with 5% HCl solution to facilitate surface treatment.
4 materials2 process steps
A copper carrier with first graphene film grown by thermal CVD at 1000°C in CH₄/H₂ mixture at ≤1 torr pressure on the first surface only (no patterned protection layer used). The carrier is etched in 4% (NH₄)2S₂O₈ solution. The carrier-etching solution suspended with graphene is diluted with deionized water multiple times to form the suspension solution. The target substrate is placed in the suspension solution, aligned to the graphene film, and the graphene adheres to the target substrate completing the transfer.
1 material
Same as Example 4 except that the first graphene film is marked with ink to facilitate alignment between the graphene film and the target substrate after carrier etching, exploiting the transparent nature of graphene.
Materials described outside the worked examples.
ferric chloride solution
FeCl₃
phosphoric acid solution
H₃PO₄
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,181,100Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/534,129 Attorney Docket No.: TZEN₃₀₀₆/REF/LES LISTING AND AMENDMENT OF THE CLAIMS 1. (Cu rr ently Amended) A method for transferring a graphene film, comprising the following steps: (A) providing a carrier, wherein the carrier has a first surface and a second surface, and a first graphene film is formed on the first surface of the carrier, wherein the structure of the first graphene film has one or more layers of monolayer graphene; (B) disposing a patterned protection layer on the second surface of the ca rr ier; (C) patterning the ca rr ier to expose the first graphene film, wherein the pattern of the patterned protection layer is replicated onto the ca rr ier; and (D) transfe rr ing the first graphene film from the pattern carrier onto a target substrate with a suspension solution, wherein the suspension solution is selected from water, alcohol, acetone, or deionized water, and wherein step (D) for transfe rr ing comprises the following steps: (D₁) providing the suspension solution, wherein the target substrate is disposed therein; (D₂) suspending the patterned carrier with the first graphene film in the suspension solution; and (D₃) removing the suspension solution and removing the patterned carrier to transfer the first graphene onto the target substrate.
The method for transferring a graphene film of claim 1, wherein the step (D) comprises the following steps: (D₁) providing the suspension solution, and disposing the patterned carrier with the first graphene film in the suspension solution, wherein the patterned carrier suspends on the suspension solution; 2 Application No.: 13/534,129 Attorney Docket No.: TZEN₃₀₀₆/REF/LES (D₂) lifting up the patterned carrier to scoop up the first graphene film from the suspension solution; and (D₃) disposing the first graphene film on the target substrate. withdrawn
The method for transfe rr ing a graphene film of claim 1, wherein the step (A) further comprises the following steps: (A₁) providing a carrier and a ca rr ier board, wherein a first graphene film and a second graphene film are formed respectively on the first surface and the second surface of the carrier, and a buffer layer is disposed on the surface of the carrier board; (A₂) stacking the carrier on the carrier board, and the buffer layer, the first graphene film, the carrier, and the second graphene film are stacked on the carrier board sequentially; (A₃) removing the second graphene film to expose the second surface of the carrier.
The method for transfe rr ing a graphene film of claim 1, further comprising a step (B') after the step (B): cleaning the second surface of the carrier.
The method for transfe rr ing a graphene film of claim 1, wherein the patterning process of the step (C) comprises: patterning the carrier and the first graphene film on the patterned protection layer.
The method for transferring a graphene film of claim 1, further comprising a step (E) after the step (D): repeating the steps (A)-(D) to form a plurality of graphene films on the target substrate.
The method for transferring a graphene film of claim 1, wherein the carrier is selected from the group consisting of copper, nickel, and combinations thereof.
The method for transferring a graphene film of claim 1, wherein in the step (D), the first graphene film being transferred on the target substrate includes portion of its surface to be bare graphene alone.
. canceled
A method for transfe rr ing a graphene film, comprising the following steps: (A) providing a carrier, wherein the carrier has a first surface and a second surface, and a first graphene film is formed on the first surface of the carrier; (B) disposing the ca rr ier in a carrier-removing solution to remove the carrier, and the first graphene film suspends on the carrier-removing solution; (C) replacing the carrier-removing solution with a suspension solution, wherein the first graphene film suspends on the suspension solution; (D) separating the first graphene film from the suspension solution; and (E) transfe rr ing the first graphene film onto a target substrate. withdrawn
The method for transferring a graphene film of claim 18, wherein the step (A) further comprises the following steps: (A₁) providing a carrier, wherein a first graphene film and a second graphene film are formed respectively on the first surface and the second surface of the carrier; and (A₂) disposing the ca rr ier on a graphene-removing solution, wherein the first graphene film is exposed to the su rr oundings, and the second graphene film contacts the graphene- removing solution to remove the second graphene film. withdrawn
The method for transferring a graphene film of claim 18, wherein the carr ier-removing solution is selected from a group consisting of an ammonium persulfate solution, a ferric chloride solution, a phosphoric acid solution, a sulfuric acid solution, or combinations thereof: withdrawn
The method for transferring a graphene film of claim 18, wherein the carr ier is selected from a group consisting of copper, nickel, or combinations thereof. withdrawn
The method for transferring a graphene film of claim 18, further comprising a step (A') before the step (B): forming a marker on the first graphene film; and wherein the step (D) further comprises: disposing a target substrate into the suspension solution, and determining a relative position between the first graphene film and the target substrate by the marker. withdrawn
The method for transferring a graphene film of claim 18, wherein the step (D) comprises scooping up the first graphene film from the suspension solution. withdrawn
. 6 canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials3 process steps
A copper carrier (25 µm thick) with graphene films grown by thermal CVD on both surfaces is mounted on a glass carrier board with a dust-free paper buffer layer. A patterned protection layer (tape) is applied to the second graphene film. The second graphene film is etched with H₂O₂/HNO3. The carrier is then etched in 4% (NH₄)2S₂O₈ solution to release the first graphene film. The graphene is washed in deionized water and suspended in deionized water (suspension solution). A target substrate is placed in the suspension solution, aligned to the graphene, and the solution is suctioned out to deposit the graphene onto the target substrate. The patterned protection layer and remaining patterned carrier are removed.
2 materials1 process step
Same procedure as Example 1 except that after washing in deionized water, the first graphene film suspended in the deionized water is lifted (scooped) from the suspension solution using the patterned protection layer and patterned carrier as the force origin, without touching the graphene film, and transferred onto the target substrate.
2 materials1 process step
Same procedure as Example 1 except that before etching, the first graphene film and carrier are washed with 5% HCl solution to remove impurities. After carrier etching, the first graphene film and etched carrier are also washed with 5% HCl solution to facilitate surface treatment.
4 materials2 process steps
A copper carrier with first graphene film grown by thermal CVD at 1000°C in CH₄/H₂ mixture at ≤1 torr pressure on the first surface only (no patterned protection layer used). The carrier is etched in 4% (NH₄)2S₂O₈ solution. The carrier-etching solution suspended with graphene is diluted with deionized water multiple times to form the suspension solution. The target substrate is placed in the suspension solution, aligned to the graphene film, and the graphene adheres to the target substrate completing the transfer.
1 material
Same as Example 4 except that the first graphene film is marked with ink to facilitate alignment between the graphene film and the target substrate after carrier etching, exploiting the transparent nature of graphene.
Materials described outside the worked examples.
ferric chloride solution
FeCl₃
phosphoric acid solution
H₃PO₄
Related documents with shared materials, methods, properties, or citations.
sulfuric acid solution
H₂SO₄
nickel carrier
Ni
nitric acid solution
HNO₃
potassium hydroxide solution
KOH
dust-free paper buffer layer
methane
CH₄
hydrogen
H₂
H₂O₂/HNO₃ mixture
sulfuric acid solution
H₂SO₄
nickel carrier
Ni
nitric acid solution
HNO₃
potassium hydroxide solution
KOH
dust-free paper buffer layer
methane
CH₄
hydrogen
H₂
H₂O₂/HNO₃ mixture
sulfuric acid solution
H₂SO₄
nickel carrier
Ni
nitric acid solution
HNO₃
potassium hydroxide solution
KOH
dust-free paper buffer layer
methane
CH₄
hydrogen
H₂
H₂O₂/HNO₃ mixture
sulfuric acid solution
H₂SO₄
nickel carrier
Ni
nitric acid solution
HNO₃
potassium hydroxide solution
KOH
dust-free paper buffer layer
methane
CH₄
hydrogen
H₂
H₂O₂/HNO₃ mixture