Research paper
Experimental CharacterizationTheoreticalOther ComputationalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
No measurements recorded
No measurements recorded
1 characterization1 figure
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MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE SUBSTRATES AND DEVICES FABRICATED THEREOF
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
No measurements recorded
No measurements recorded
1 characterization1 figure
Related documents with shared materials, methods, properties, or citations.
MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE SUBSTRATES AND DEVICES FABRICATED THEREOF
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on Sapphire Substrate
GRAPHENE WIRING STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME
GaN-based VCSEL Chip Based on Porous DBR and Manufacturing Method of the Same
GaN EPITAXIAL GROWTH METHOD
EFFICIENT WIDE BANDGAP GAN-BASED LED CHIP BASED ON SURFACE PLASMON EFFECT AND MANUFACTURING METHOD THEREFOR
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
No measurements recorded
No measurements recorded
1 characterization1 figure
Related documents with shared materials, methods, properties, or citations.
MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE SUBSTRATES AND DEVICES FABRICATED THEREOF
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on Sapphire Substrate
GRAPHENE WIRING STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME
GaN-based VCSEL Chip Based on Porous DBR and Manufacturing Method of the Same
GaN EPITAXIAL GROWTH METHOD
EFFICIENT WIDE BANDGAP GAN-BASED LED CHIP BASED ON SURFACE PLASMON EFFECT AND MANUFACTURING METHOD THEREFOR
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
No measurements recorded
No measurements recorded
1 characterization1 figure
Related documents with shared materials, methods, properties, or citations.
MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE SUBSTRATES AND DEVICES FABRICATED THEREOF
Multi-Finger Large Periphery AlInN/AlN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on Sapphire Substrate
GRAPHENE WIRING STRUCTURE AND SEMICONDUCTOR DEVICE USING THE SAME
GaN-based VCSEL Chip Based on Porous DBR and Manufacturing Method of the Same
GaN EPITAXIAL GROWTH METHOD
EFFICIENT WIDE BANDGAP GAN-BASED LED CHIP BASED ON SURFACE PLASMON EFFECT AND MANUFACTURING METHOD THEREFOR