METHOD AND SURFACE MORPHOLOGY OF NON-POLAR GALLIUM NITRIDE CONTAINING SUBSTRATES

James W. Raring

Patent

Atlas literature

Patent

US 9,831,386

METHOD AND SURFACE MORPHOLOGY OF NON-POLAR GALLIUM NITRIDE CONTAINING SUBSTRATES

James W. Raring

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

50 independent · 6 dependent

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IndependentGaNgallium and nitrogen containing epitaxial layeroptical device (LED or laser)
A method of forming an optical device, said method comprising: providing a gallium and nitrogen containing substrate member having an oﬀ-axis m- plane oriented crystalline surface plane, the oﬀ-axis m-plane oriented crystalline surface plane ranging from about +/- 0.6 degrees to about +/- 20 degrees toward a c-plane; growing by MOCVD at least one-a gallium- and nitrogen-containing epitaxial layer- formed overlying the oﬀ-axis m-plane oriented crystalline surface plane conﬁgured using at least a substantially atmospheric pressure during an epitaxial formation process to form at least a region of a quantum well having_ over a crystalline surface plane of a gallium- and nitrogen-containing substrate. said at least one epitaxial laver comprising: at least one light emitting laver conﬁgured to emit luminescence substantially free from a double-peak emission spectrum; and a thickness of at least 1.5 nanometers to form a surface region overlying the gallium and nitrogen containing epitaxial layer, the surface region b eing substantially free from hillocks; and 2 growing a second layer overlying the surface region to deﬁne a light emitting active region, the light emitting active region emitting light in a violet wavelength regime s wherein said crystalline surface plane is substantially oriented along the (30-3-1) direction.
1. 51
  Dependent← claim 50
  The method of claim 50, wherein growing said at least one epitaxial layer comprises growing said light-emitting layer at a temperature ranging from about 700 Degrees Celsius to about 1200 Degrees Celsius.
2. 52
  Dependent← claim 50
  The method of claim 50, wherein growing said at least one epitaxial layer comprises growing said light-emitting layer in a carrier gas selected from a group comprising H 2, N 2, and a mixture of H 2 and N 2.
3. 53
  Dependent← claim 50
  The method of claim 50, wherein said growing said at least one epitaxial layer comprises growing said at least one epitaxial layer at an atmospheric pressure. 54. The method of claim 53, wherein said atmospheric pressure is within a range from about 700 Torr to about 800 Tor r.
4. 55
  Dependent← claim 50
  The method of claim 50, wherein said at least one light-emitting layer comprises at least one quantum well having a thickness of at least 3 nm. 56. The method of claim 50, wherein said at least one light-emitting layer comprises at least one quantum well having a thickness of at least 5 nm. 57. The method of claim 50, wherein at least 90% of said surface region is free from hillocks.
5. 58
  Dependent← claim 50
  The method of claim 50, wherein said optical device is one of a laser and a light emitting diode.
6. 59
  Dependent← claim 50
  The method of claim 50, wherein growing said at least one epitaxial layer comprises growing multiple gallium-and nitrogen-containing epitaxial layers comprising n-type regions, p-type regions, and at least one quantum well. 3

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

optical device (LED or laser)

second_layer_light_emitting_active_regionsecond layer light emitting active region

gallium and nitrogen containing epitaxial layerepitaxial layer with quantum well

GaNsubstrate

Materials

Materials described outside the worked examples.

gallium and nitrogen containing substrate

GaN

Substrate

Substrate And Epitaxial Material

gallium and nitrogen containing epitaxial layer

Process steps

Additional fabrication and treatment steps described in the patent.

Mocvd Growth

Step 1

Temperature

700, 1200°C

Ambient

N2 or H2 or mixture of H2 and N2

Process details

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	420–485 nm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD AND SURFACE MORPHOLOGY OF NON-POLAR GALLIUM NITRIDE CONTAINING SUBSTRATES | Matter42 Literature