Patent
Atlas literature
Patent
US 12,054,851 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates a method for fabricating indium phos- 55 phide wafers using the vertical gradient freeze furnace 100 shown in
FIGS. 3A-3D illustrate x-ray diffraction imaging results for indium phosphide substrates from different growth tech- niques, in accordance with an example …
FIG. 4C illustrates etch pit density measurements of six inch VGF sulfur-doped InP substrates, in accordance with an example embodiment of the disclosure.
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
FIG. 6 illustrates photoelastic measurements of indium phosphide substrates, in accordance with an example embodiment of the disclosure.
FIG. 7 illustrates phase shift and stress direction results for photoelectric measurements of substrates, in accordance with an example embodiment of the …
FIG. 8 illustrates devices fabricated on low etch pit density indium phosphide wafers, in accordance with an example embodiment of the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming single crystal indium phosphide substrates, the method comprising: sealing charge material comprising polycrystalline indium phosphide seed crystal, B₂O₃ encapsulant, and a dopant in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of the seed crystal is melted; starting growth from the partially melted seed by imple-menting a controlled cooling of the multi-zone heating system; applying a temperature gradient of between 1 and 8 C/cm at a melt-crystal interface; controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified indium phosphide crystal; and slicing the crystal to create indium phosphide wafers of four inches in diameter or larger with an etch pit density of 500 cm⁻² or less.
The method according to claim 1, comprising control-ling the cooling of the multi-zone heating system at the rate of 0.1 to 2 C/h.
The method according to claim 1, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 1, comprising cooling the charge material at rates of 0.5 to 5 C/h, 1 to 10 C/h and 5 to 20 C/h for different heating zones for the first 300 C, and then at rates of 20-50 C/h to room temperature.
The method according to claim 1, comprising control-ling the interface shape to be concave to the melt, with the center being ∼10 mm lower than the edge of the solidified crystal.
The method according to claim 1, wherein the wafers have a diameter of 6 inches or more.
The method according to claim 1, wherein the wafers have a measured etch pit density of 200 cm⁻² or less.
The method according to claim 1, wherein the wafers have a measured etch pit density of 100 cm⁻² or less.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide single crystal wafer
Materials described outside the worked examples.
indium phosphide single crystal
InP
B₂O₃ encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A-3D illustrate x-ray diffraction imaging results for indium phosphide substrates from different growth tech- niques, in accordance with an example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EPD ≤500 cm-2 (claimed, 4 inch or larger InP wafer) | — | InP |
EPD ≤200 cm-2 (claimed) | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,054,851 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates a method for fabricating indium phos- 55 phide wafers using the vertical gradient freeze furnace 100 shown in
FIGS. 3A-3D illustrate x-ray diffraction imaging results for indium phosphide substrates from different growth tech- niques, in accordance with an example …
FIG. 4C illustrates etch pit density measurements of six inch VGF sulfur-doped InP substrates, in accordance with an example embodiment of the disclosure.
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
FIG. 6 illustrates photoelastic measurements of indium phosphide substrates, in accordance with an example embodiment of the disclosure.
FIG. 7 illustrates phase shift and stress direction results for photoelectric measurements of substrates, in accordance with an example embodiment of the …
FIG. 8 illustrates devices fabricated on low etch pit density indium phosphide wafers, in accordance with an example embodiment of the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming single crystal indium phosphide substrates, the method comprising: sealing charge material comprising polycrystalline indium phosphide seed crystal, B₂O₃ encapsulant, and a dopant in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of the seed crystal is melted; starting growth from the partially melted seed by imple-menting a controlled cooling of the multi-zone heating system; applying a temperature gradient of between 1 and 8 C/cm at a melt-crystal interface; controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified indium phosphide crystal; and slicing the crystal to create indium phosphide wafers of four inches in diameter or larger with an etch pit density of 500 cm⁻² or less.
The method according to claim 1, comprising control-ling the cooling of the multi-zone heating system at the rate of 0.1 to 2 C/h.
The method according to claim 1, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 1, comprising cooling the charge material at rates of 0.5 to 5 C/h, 1 to 10 C/h and 5 to 20 C/h for different heating zones for the first 300 C, and then at rates of 20-50 C/h to room temperature.
The method according to claim 1, comprising control-ling the interface shape to be concave to the melt, with the center being ∼10 mm lower than the edge of the solidified crystal.
The method according to claim 1, wherein the wafers have a diameter of 6 inches or more.
The method according to claim 1, wherein the wafers have a measured etch pit density of 200 cm⁻² or less.
The method according to claim 1, wherein the wafers have a measured etch pit density of 100 cm⁻² or less.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide single crystal wafer
Materials described outside the worked examples.
indium phosphide single crystal
InP
B₂O₃ encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A-3D illustrate x-ray diffraction imaging results for indium phosphide substrates from different growth tech- niques, in accordance with an example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EPD ≤500 cm-2 (claimed, 4 inch or larger InP wafer) | — | InP |
EPD ≤200 cm-2 (claimed) | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,054,851 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates a method for fabricating indium phos- 55 phide wafers using the vertical gradient freeze furnace 100 shown in
FIGS. 3A-3D illustrate x-ray diffraction imaging results for indium phosphide substrates from different growth tech- niques, in accordance with an example …
FIG. 4C illustrates etch pit density measurements of six inch VGF sulfur-doped InP substrates, in accordance with an example embodiment of the disclosure.
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
FIG. 6 illustrates photoelastic measurements of indium phosphide substrates, in accordance with an example embodiment of the disclosure.
FIG. 7 illustrates phase shift and stress direction results for photoelectric measurements of substrates, in accordance with an example embodiment of the …
FIG. 8 illustrates devices fabricated on low etch pit density indium phosphide wafers, in accordance with an example embodiment of the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming single crystal indium phosphide substrates, the method comprising: sealing charge material comprising polycrystalline indium phosphide seed crystal, B₂O₃ encapsulant, and a dopant in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of the seed crystal is melted; starting growth from the partially melted seed by imple-menting a controlled cooling of the multi-zone heating system; applying a temperature gradient of between 1 and 8 C/cm at a melt-crystal interface; controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified indium phosphide crystal; and slicing the crystal to create indium phosphide wafers of four inches in diameter or larger with an etch pit density of 500 cm⁻² or less.
The method according to claim 1, comprising control-ling the cooling of the multi-zone heating system at the rate of 0.1 to 2 C/h.
The method according to claim 1, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 1, comprising cooling the charge material at rates of 0.5 to 5 C/h, 1 to 10 C/h and 5 to 20 C/h for different heating zones for the first 300 C, and then at rates of 20-50 C/h to room temperature.
The method according to claim 1, comprising control-ling the interface shape to be concave to the melt, with the center being ∼10 mm lower than the edge of the solidified crystal.
The method according to claim 1, wherein the wafers have a diameter of 6 inches or more.
The method according to claim 1, wherein the wafers have a measured etch pit density of 200 cm⁻² or less.
The method according to claim 1, wherein the wafers have a measured etch pit density of 100 cm⁻² or less.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide single crystal wafer
Materials described outside the worked examples.
indium phosphide single crystal
InP
B₂O₃ encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A-3D illustrate x-ray diffraction imaging results for indium phosphide substrates from different growth tech- niques, in accordance with an example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EPD ≤500 cm-2 (claimed, 4 inch or larger InP wafer) | — | InP |
EPD ≤200 cm-2 (claimed) | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,054,851 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates a method for fabricating indium phos- 55 phide wafers using the vertical gradient freeze furnace 100 shown in
FIGS. 3A-3D illustrate x-ray diffraction imaging results for indium phosphide substrates from different growth tech- niques, in accordance with an example …
FIG. 4C illustrates etch pit density measurements of six inch VGF sulfur-doped InP substrates, in accordance with an example embodiment of the disclosure.
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
FIG. 6 illustrates photoelastic measurements of indium phosphide substrates, in accordance with an example embodiment of the disclosure.
FIG. 7 illustrates phase shift and stress direction results for photoelectric measurements of substrates, in accordance with an example embodiment of the …
FIG. 8 illustrates devices fabricated on low etch pit density indium phosphide wafers, in accordance with an example embodiment of the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming single crystal indium phosphide substrates, the method comprising: sealing charge material comprising polycrystalline indium phosphide seed crystal, B₂O₃ encapsulant, and a dopant in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of the seed crystal is melted; starting growth from the partially melted seed by imple-menting a controlled cooling of the multi-zone heating system; applying a temperature gradient of between 1 and 8 C/cm at a melt-crystal interface; controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified indium phosphide crystal; and slicing the crystal to create indium phosphide wafers of four inches in diameter or larger with an etch pit density of 500 cm⁻² or less.
The method according to claim 1, comprising control-ling the cooling of the multi-zone heating system at the rate of 0.1 to 2 C/h.
The method according to claim 1, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 1, comprising cooling the charge material at rates of 0.5 to 5 C/h, 1 to 10 C/h and 5 to 20 C/h for different heating zones for the first 300 C, and then at rates of 20-50 C/h to room temperature.
The method according to claim 1, comprising control-ling the interface shape to be concave to the melt, with the center being ∼10 mm lower than the edge of the solidified crystal.
The method according to claim 1, wherein the wafers have a diameter of 6 inches or more.
The method according to claim 1, wherein the wafers have a measured etch pit density of 200 cm⁻² or less.
The method according to claim 1, wherein the wafers have a measured etch pit density of 100 cm⁻² or less.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide single crystal wafer
Materials described outside the worked examples.
indium phosphide single crystal
InP
B₂O₃ encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 3A-3D illustrate x-ray diffraction imaging results for indium phosphide substrates from different growth tech- niques, in accordance with an example …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EPD ≤500 cm-2 (claimed, 4 inch or larger InP wafer) | — | InP |
EPD ≤200 cm-2 (claimed) | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
pyrolytic boron nitride crucible
BN
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
EPD ≤100 cm-2 (claimed) | — | InP |
EPD ≤10 cm-2 (abstract embodiment) | — | InP |
fewer than 5 dislocations or slip lines as measured by XRD imaging | — | InP |
area with EPD=0 is at least 80% of total wafer surface | — | InP |
area with EPD=0 is at least 90% of total wafer surface | — | InP |
Thickness | 10–20 mm | — |
Thickness | 2–3 cm | — |
Thickness | 5–20 mm | — |
Thickness | 1–2 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 20 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 150 cm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≥ 20 mm | — |
Cited non-patent literature · 4
pyrolytic boron nitride crucible
BN
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
EPD ≤100 cm-2 (claimed) | — | InP |
EPD ≤10 cm-2 (abstract embodiment) | — | InP |
fewer than 5 dislocations or slip lines as measured by XRD imaging | — | InP |
area with EPD=0 is at least 80% of total wafer surface | — | InP |
area with EPD=0 is at least 90% of total wafer surface | — | InP |
Thickness | 10–20 mm | — |
Thickness | 2–3 cm | — |
Thickness | 5–20 mm | — |
Thickness | 1–2 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 20 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 150 cm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≥ 20 mm | — |
Cited non-patent literature · 4
pyrolytic boron nitride crucible
BN
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
EPD ≤100 cm-2 (claimed) | — | InP |
EPD ≤10 cm-2 (abstract embodiment) | — | InP |
fewer than 5 dislocations or slip lines as measured by XRD imaging | — | InP |
area with EPD=0 is at least 80% of total wafer surface | — | InP |
area with EPD=0 is at least 90% of total wafer surface | — | InP |
Thickness | 10–20 mm | — |
Thickness | 2–3 cm | — |
Thickness | 5–20 mm | — |
Thickness | 1–2 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 20 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 150 cm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≥ 20 mm | — |
Cited non-patent literature · 4
pyrolytic boron nitride crucible
BN
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
FIG. 5B illustrates resistivity, photoluminescence, and etch pit density measurements of non-VGF three inch InP substrates, in accordance with an example …
EPD ≤100 cm-2 (claimed) | — | InP |
EPD ≤10 cm-2 (abstract embodiment) | — | InP |
fewer than 5 dislocations or slip lines as measured by XRD imaging | — | InP |
area with EPD=0 is at least 80% of total wafer surface | — | InP |
area with EPD=0 is at least 90% of total wafer surface | — | InP |
Thickness | 10–20 mm | — |
Thickness | 2–3 cm | — |
Thickness | 5–20 mm | — |
Thickness | 1–2 cm | — |
Thickness | ≤ 2 cm | — |
Thickness | ≤ 20 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 150 cm | — |
Thickness | ≤ 50 cm | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 5 cm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≥ 20 mm | — |
Cited non-patent literature · 4
