Patent
US 9,666,675GRAPHENE DEVICE AND METHOD OF OPERATING THE SAME
Unjeong KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,666,675Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a graphene device according to an exemplary embodiment; [40]
FIG. 2 is a cross-sectional view taken along X-X of
FIG. 3 is a cross-sectional view taken along Y-Y of
FIG. 4 is an enlarged view illustrating a meta atom illustrated in
FIG. 5 B is a diagram illustrating an energy band structure in the vicinity of a Fermi level of graphene; [45]
FIG. 6 is a diagram illustrating an energy change of graphene depending on a gate voltage according to an exemplary embodiment; [46]
FIG. 7 is a view for explaining a graphene device that operates as a filter according to an exemplary embodiment; [47]
FIG. 8 is a diagram illustrating an example in which electrons and holes are in an unbalanced state at an interface between a graphene layer and a meta atom; …
FIG. 9A is a graph illustrating a wavelength band of light incident to a graphene device according to an exemplary embodiment; [49]
FIG. 10 is a graph illustrating a Q- factor of a graphene device according to an exemplary embodiment; [51]
FIG. 11 is a view illustrating a graphene device that may modulate light by using control light according to an exemplary embodiment; [52]
FIGS. 12A and 12B are views for explaining waves reflected by a graphene device depending on a gate voltage according to an exemplary embodiment; [53]
FIGS. 13 to 16B are views for explaining a method of manufacturing a graphene device according to an exemplary embodiment; [54]
FIG. 14, the graphene layer 30 that covers the plurality of meta atoms 20 may be formed on the substrate 10. The graphene layer 30 may be synthesized by using …
FIGS. 15A and 15B, the drain electrode 62, the source electrode 64, and the gate electrode 66 may be formed on the substrate 10. The drain electrode 62, the …
FIGS. 16A and 16B, the dielectric layer 50 that covers the graphene layer 30 may be formed. The dielectric layer 50 may cover at least a portion of the drain …
FIG. 17 is a view illustrating a graphene device according to an exemplary embodiment; and 5 [55]
FIGS. 18 to 20 are views illustrating an example of a meta atom applicable to a graphene device according to an exemplary embodiment.
FIG. 19, a meta atom 20b may include three or more sub-meta atoms. For example, the meta atom 20 may include first through third sub- meta atoms 22b, 24b, and …
FIG. 20, a meta atom 20c may include a plurality of curved sub-meta atoms 22c and 24c. 19 [114] While this inventive concept has been particularly shown and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a substrate; an active layer disposed on the substrate, the active layer comprising: a plurality of meta atoms, each of the plurality of meta atoms comprising a first branch and a second branch intersecting the first branch, and a graphene layer which is in contact with each of the plurality of meta atoms; and a dielectric layer disposed on the substrate, wherein the dielectric layer covers the active layer.
The graphene device of claim 1, wherein, in at least one of the plurality of meta atoms, the first branch comprises a first sub-meta atom and the second branch comprises a second sub-meta atom which intersects the first sub-meta atom in a shared partial region.
The graphene device of claim 1, wherein the plurality of meta atoms are arranged in a two-dimensional lattice array.
The graphene device of claim 1, wherein at least one of the plurality of meta atoms comprises metal.
The graphene device of claim 1, wherein a dielectric constant of the dielectric layer is greater than a dielectric constant of the graphene layer. 22
The graphene device of claim 1, wherein the dielectric layer comprises an ion- gel.
The graphene device of claim 1, wherein each of the plurality of meta atoms is contacts the substrate.
The graphene device of claim 1, wherein the graphene layer contacts the substrate.
The graphene device of claim 1, wherein the substrate is an insulating substrate.
The graphene device of claim 1, further comprising: a first electrode disposed on the substrate and in contact with the dielectric layer.
The graphene device of claim 1, wherein light incident on the graphene device induces a current at an interface between the graphene layer and the plurality of meta atoms. 23
Layer stacks claimed or described, ordered top of device to substrate.
graphene device with meta atoms
graphene device with gate and source/drain electrodes
Materials described outside the worked examples.
graphene
meta atoms
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 B is a diagram illustrating an energy band structure in the vicinity of a Fermi level of graphene; [45]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
meta atom horizontal length L for mid-infrared incident light (~3-5 µm) | 2.2 µm | meta atoms |
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DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
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Atlas literature
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US 9,666,675Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a graphene device according to an exemplary embodiment; [40]
FIG. 2 is a cross-sectional view taken along X-X of
FIG. 3 is a cross-sectional view taken along Y-Y of
FIG. 4 is an enlarged view illustrating a meta atom illustrated in
FIG. 5 B is a diagram illustrating an energy band structure in the vicinity of a Fermi level of graphene; [45]
FIG. 6 is a diagram illustrating an energy change of graphene depending on a gate voltage according to an exemplary embodiment; [46]
FIG. 7 is a view for explaining a graphene device that operates as a filter according to an exemplary embodiment; [47]
FIG. 8 is a diagram illustrating an example in which electrons and holes are in an unbalanced state at an interface between a graphene layer and a meta atom; …
FIG. 9A is a graph illustrating a wavelength band of light incident to a graphene device according to an exemplary embodiment; [49]
FIG. 10 is a graph illustrating a Q- factor of a graphene device according to an exemplary embodiment; [51]
FIG. 11 is a view illustrating a graphene device that may modulate light by using control light according to an exemplary embodiment; [52]
FIGS. 12A and 12B are views for explaining waves reflected by a graphene device depending on a gate voltage according to an exemplary embodiment; [53]
FIGS. 13 to 16B are views for explaining a method of manufacturing a graphene device according to an exemplary embodiment; [54]
FIG. 14, the graphene layer 30 that covers the plurality of meta atoms 20 may be formed on the substrate 10. The graphene layer 30 may be synthesized by using …
FIGS. 15A and 15B, the drain electrode 62, the source electrode 64, and the gate electrode 66 may be formed on the substrate 10. The drain electrode 62, the …
FIGS. 16A and 16B, the dielectric layer 50 that covers the graphene layer 30 may be formed. The dielectric layer 50 may cover at least a portion of the drain …
FIG. 17 is a view illustrating a graphene device according to an exemplary embodiment; and 5 [55]
FIGS. 18 to 20 are views illustrating an example of a meta atom applicable to a graphene device according to an exemplary embodiment.
FIG. 19, a meta atom 20b may include three or more sub-meta atoms. For example, the meta atom 20 may include first through third sub- meta atoms 22b, 24b, and …
FIG. 20, a meta atom 20c may include a plurality of curved sub-meta atoms 22c and 24c. 19 [114] While this inventive concept has been particularly shown and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a substrate; an active layer disposed on the substrate, the active layer comprising: a plurality of meta atoms, each of the plurality of meta atoms comprising a first branch and a second branch intersecting the first branch, and a graphene layer which is in contact with each of the plurality of meta atoms; and a dielectric layer disposed on the substrate, wherein the dielectric layer covers the active layer.
The graphene device of claim 1, wherein, in at least one of the plurality of meta atoms, the first branch comprises a first sub-meta atom and the second branch comprises a second sub-meta atom which intersects the first sub-meta atom in a shared partial region.
The graphene device of claim 1, wherein the plurality of meta atoms are arranged in a two-dimensional lattice array.
The graphene device of claim 1, wherein at least one of the plurality of meta atoms comprises metal.
The graphene device of claim 1, wherein a dielectric constant of the dielectric layer is greater than a dielectric constant of the graphene layer. 22
The graphene device of claim 1, wherein the dielectric layer comprises an ion- gel.
The graphene device of claim 1, wherein each of the plurality of meta atoms is contacts the substrate.
The graphene device of claim 1, wherein the graphene layer contacts the substrate.
The graphene device of claim 1, wherein the substrate is an insulating substrate.
The graphene device of claim 1, further comprising: a first electrode disposed on the substrate and in contact with the dielectric layer.
The graphene device of claim 1, wherein light incident on the graphene device induces a current at an interface between the graphene layer and the plurality of meta atoms. 23
Layer stacks claimed or described, ordered top of device to substrate.
graphene device with meta atoms
graphene device with gate and source/drain electrodes
Materials described outside the worked examples.
graphene
meta atoms
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 B is a diagram illustrating an energy band structure in the vicinity of a Fermi level of graphene; [45]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
meta atom horizontal length L for mid-infrared incident light (~3-5 µm) | 2.2 µm | meta atoms |
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DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE-BASED PLASMONIC SLOT ELECTRO-OPTICAL MODULATOR
Patent
Atlas literature
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US 9,666,675Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a graphene device according to an exemplary embodiment; [40]
FIG. 2 is a cross-sectional view taken along X-X of
FIG. 3 is a cross-sectional view taken along Y-Y of
FIG. 4 is an enlarged view illustrating a meta atom illustrated in
FIG. 5 B is a diagram illustrating an energy band structure in the vicinity of a Fermi level of graphene; [45]
FIG. 6 is a diagram illustrating an energy change of graphene depending on a gate voltage according to an exemplary embodiment; [46]
FIG. 7 is a view for explaining a graphene device that operates as a filter according to an exemplary embodiment; [47]
FIG. 8 is a diagram illustrating an example in which electrons and holes are in an unbalanced state at an interface between a graphene layer and a meta atom; …
FIG. 9A is a graph illustrating a wavelength band of light incident to a graphene device according to an exemplary embodiment; [49]
FIG. 10 is a graph illustrating a Q- factor of a graphene device according to an exemplary embodiment; [51]
FIG. 11 is a view illustrating a graphene device that may modulate light by using control light according to an exemplary embodiment; [52]
FIGS. 12A and 12B are views for explaining waves reflected by a graphene device depending on a gate voltage according to an exemplary embodiment; [53]
FIGS. 13 to 16B are views for explaining a method of manufacturing a graphene device according to an exemplary embodiment; [54]
FIG. 14, the graphene layer 30 that covers the plurality of meta atoms 20 may be formed on the substrate 10. The graphene layer 30 may be synthesized by using …
FIGS. 15A and 15B, the drain electrode 62, the source electrode 64, and the gate electrode 66 may be formed on the substrate 10. The drain electrode 62, the …
FIGS. 16A and 16B, the dielectric layer 50 that covers the graphene layer 30 may be formed. The dielectric layer 50 may cover at least a portion of the drain …
FIG. 17 is a view illustrating a graphene device according to an exemplary embodiment; and 5 [55]
FIGS. 18 to 20 are views illustrating an example of a meta atom applicable to a graphene device according to an exemplary embodiment.
FIG. 19, a meta atom 20b may include three or more sub-meta atoms. For example, the meta atom 20 may include first through third sub- meta atoms 22b, 24b, and …
FIG. 20, a meta atom 20c may include a plurality of curved sub-meta atoms 22c and 24c. 19 [114] While this inventive concept has been particularly shown and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a substrate; an active layer disposed on the substrate, the active layer comprising: a plurality of meta atoms, each of the plurality of meta atoms comprising a first branch and a second branch intersecting the first branch, and a graphene layer which is in contact with each of the plurality of meta atoms; and a dielectric layer disposed on the substrate, wherein the dielectric layer covers the active layer.
The graphene device of claim 1, wherein, in at least one of the plurality of meta atoms, the first branch comprises a first sub-meta atom and the second branch comprises a second sub-meta atom which intersects the first sub-meta atom in a shared partial region.
The graphene device of claim 1, wherein the plurality of meta atoms are arranged in a two-dimensional lattice array.
The graphene device of claim 1, wherein at least one of the plurality of meta atoms comprises metal.
The graphene device of claim 1, wherein a dielectric constant of the dielectric layer is greater than a dielectric constant of the graphene layer. 22
The graphene device of claim 1, wherein the dielectric layer comprises an ion- gel.
The graphene device of claim 1, wherein each of the plurality of meta atoms is contacts the substrate.
The graphene device of claim 1, wherein the graphene layer contacts the substrate.
The graphene device of claim 1, wherein the substrate is an insulating substrate.
The graphene device of claim 1, further comprising: a first electrode disposed on the substrate and in contact with the dielectric layer.
The graphene device of claim 1, wherein light incident on the graphene device induces a current at an interface between the graphene layer and the plurality of meta atoms. 23
Layer stacks claimed or described, ordered top of device to substrate.
graphene device with meta atoms
graphene device with gate and source/drain electrodes
Materials described outside the worked examples.
graphene
meta atoms
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 B is a diagram illustrating an energy band structure in the vicinity of a Fermi level of graphene; [45]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
meta atom horizontal length L for mid-infrared incident light (~3-5 µm) | 2.2 µm | meta atoms |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE-BASED PLASMONIC SLOT ELECTRO-OPTICAL MODULATOR
Patent
Atlas literature
Patent
US 9,666,675Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view illustrating a graphene device according to an exemplary embodiment; [40]
FIG. 2 is a cross-sectional view taken along X-X of
FIG. 3 is a cross-sectional view taken along Y-Y of
FIG. 4 is an enlarged view illustrating a meta atom illustrated in
FIG. 5 B is a diagram illustrating an energy band structure in the vicinity of a Fermi level of graphene; [45]
FIG. 6 is a diagram illustrating an energy change of graphene depending on a gate voltage according to an exemplary embodiment; [46]
FIG. 7 is a view for explaining a graphene device that operates as a filter according to an exemplary embodiment; [47]
FIG. 8 is a diagram illustrating an example in which electrons and holes are in an unbalanced state at an interface between a graphene layer and a meta atom; …
FIG. 9A is a graph illustrating a wavelength band of light incident to a graphene device according to an exemplary embodiment; [49]
FIG. 10 is a graph illustrating a Q- factor of a graphene device according to an exemplary embodiment; [51]
FIG. 11 is a view illustrating a graphene device that may modulate light by using control light according to an exemplary embodiment; [52]
FIGS. 12A and 12B are views for explaining waves reflected by a graphene device depending on a gate voltage according to an exemplary embodiment; [53]
FIGS. 13 to 16B are views for explaining a method of manufacturing a graphene device according to an exemplary embodiment; [54]
FIG. 14, the graphene layer 30 that covers the plurality of meta atoms 20 may be formed on the substrate 10. The graphene layer 30 may be synthesized by using …
FIGS. 15A and 15B, the drain electrode 62, the source electrode 64, and the gate electrode 66 may be formed on the substrate 10. The drain electrode 62, the …
FIGS. 16A and 16B, the dielectric layer 50 that covers the graphene layer 30 may be formed. The dielectric layer 50 may cover at least a portion of the drain …
FIG. 17 is a view illustrating a graphene device according to an exemplary embodiment; and 5 [55]
FIGS. 18 to 20 are views illustrating an example of a meta atom applicable to a graphene device according to an exemplary embodiment.
FIG. 19, a meta atom 20b may include three or more sub-meta atoms. For example, the meta atom 20 may include first through third sub- meta atoms 22b, 24b, and …
FIG. 20, a meta atom 20c may include a plurality of curved sub-meta atoms 22c and 24c. 19 [114] While this inventive concept has been particularly shown and …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene device comprising: a substrate; an active layer disposed on the substrate, the active layer comprising: a plurality of meta atoms, each of the plurality of meta atoms comprising a first branch and a second branch intersecting the first branch, and a graphene layer which is in contact with each of the plurality of meta atoms; and a dielectric layer disposed on the substrate, wherein the dielectric layer covers the active layer.
The graphene device of claim 1, wherein, in at least one of the plurality of meta atoms, the first branch comprises a first sub-meta atom and the second branch comprises a second sub-meta atom which intersects the first sub-meta atom in a shared partial region.
The graphene device of claim 1, wherein the plurality of meta atoms are arranged in a two-dimensional lattice array.
The graphene device of claim 1, wherein at least one of the plurality of meta atoms comprises metal.
The graphene device of claim 1, wherein a dielectric constant of the dielectric layer is greater than a dielectric constant of the graphene layer. 22
The graphene device of claim 1, wherein the dielectric layer comprises an ion- gel.
The graphene device of claim 1, wherein each of the plurality of meta atoms is contacts the substrate.
The graphene device of claim 1, wherein the graphene layer contacts the substrate.
The graphene device of claim 1, wherein the substrate is an insulating substrate.
The graphene device of claim 1, further comprising: a first electrode disposed on the substrate and in contact with the dielectric layer.
The graphene device of claim 1, wherein light incident on the graphene device induces a current at an interface between the graphene layer and the plurality of meta atoms. 23
Layer stacks claimed or described, ordered top of device to substrate.
graphene device with meta atoms
graphene device with gate and source/drain electrodes
Materials described outside the worked examples.
graphene
meta atoms
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 B is a diagram illustrating an energy band structure in the vicinity of a Fermi level of graphene; [45]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
meta atom horizontal length L for mid-infrared incident light (~3-5 µm) | 2.2 µm | meta atoms |
Related documents with shared materials, methods, properties, or citations.
DOPED, PASSIVATED GRAPHENE NANOMESH, METHOD OF MAKING THE DOPED, PASSIVATED GRAPHENE NANOMESH, AND SEMICONDUCTOR DEVICE INCLUDING THE DOPED, PASSIVATED GRAPHENE NANOMESH
GRAPHENE-BASED PLASMONIC SLOT ELECTRO-OPTICAL MODULATOR
dielectric layer
metal
gold
Au
ion gel
insulating substrate
sapphire substrate
Al₂O₃
plastic substrate
FIG. 6 is a diagram illustrating an energy change of graphene depending on a gate voltage according to an exemplary embodiment; [46]
FIG. 9A is a graph illustrating a wavelength band of light incident to a graphene device according to an exemplary embodiment; [49]
FIG. 10 is a graph illustrating a Q- factor of a graphene device according to an exemplary embodiment; [51]
FIGS. 12A and 12B are views for explaining waves reflected by a graphene device depending on a gate voltage according to an exemplary embodiment; [53]
meta atom vertical length H for mid-infrared incident light (~3-5 µm) |
| 3.6 µm |
meta atoms |
meta atom thickness d for mid-infrared incident light (~3-5 µm) | 200 nm | meta atoms |
interval between meta atoms for mid-infrared incident light (~3-5 µm) | 400 nm | meta atoms |
sub-meta atom thickness d range (claimed) | 50–300 nm | meta atoms |
Thickness | 20000–200000 cm | — |
dielectric layer
metal
gold
Au
ion gel
insulating substrate
sapphire substrate
Al₂O₃
plastic substrate
FIG. 6 is a diagram illustrating an energy change of graphene depending on a gate voltage according to an exemplary embodiment; [46]
FIG. 9A is a graph illustrating a wavelength band of light incident to a graphene device according to an exemplary embodiment; [49]
FIG. 10 is a graph illustrating a Q- factor of a graphene device according to an exemplary embodiment; [51]
FIGS. 12A and 12B are views for explaining waves reflected by a graphene device depending on a gate voltage according to an exemplary embodiment; [53]
meta atom vertical length H for mid-infrared incident light (~3-5 µm) |
| 3.6 µm |
meta atoms |
meta atom thickness d for mid-infrared incident light (~3-5 µm) | 200 nm | meta atoms |
interval between meta atoms for mid-infrared incident light (~3-5 µm) | 400 nm | meta atoms |
sub-meta atom thickness d range (claimed) | 50–300 nm | meta atoms |
Thickness | 20000–200000 cm | — |
dielectric layer
metal
gold
Au
ion gel
insulating substrate
sapphire substrate
Al₂O₃
plastic substrate
FIG. 6 is a diagram illustrating an energy change of graphene depending on a gate voltage according to an exemplary embodiment; [46]
FIG. 9A is a graph illustrating a wavelength band of light incident to a graphene device according to an exemplary embodiment; [49]
FIG. 10 is a graph illustrating a Q- factor of a graphene device according to an exemplary embodiment; [51]
FIGS. 12A and 12B are views for explaining waves reflected by a graphene device depending on a gate voltage according to an exemplary embodiment; [53]
meta atom vertical length H for mid-infrared incident light (~3-5 µm) |
| 3.6 µm |
meta atoms |
meta atom thickness d for mid-infrared incident light (~3-5 µm) | 200 nm | meta atoms |
interval between meta atoms for mid-infrared incident light (~3-5 µm) | 400 nm | meta atoms |
sub-meta atom thickness d range (claimed) | 50–300 nm | meta atoms |
Thickness | 20000–200000 cm | — |
dielectric layer
metal
gold
Au
ion gel
insulating substrate
sapphire substrate
Al₂O₃
plastic substrate
FIG. 6 is a diagram illustrating an energy change of graphene depending on a gate voltage according to an exemplary embodiment; [46]
FIG. 9A is a graph illustrating a wavelength band of light incident to a graphene device according to an exemplary embodiment; [49]
FIG. 10 is a graph illustrating a Q- factor of a graphene device according to an exemplary embodiment; [51]
FIGS. 12A and 12B are views for explaining waves reflected by a graphene device depending on a gate voltage according to an exemplary embodiment; [53]
meta atom vertical length H for mid-infrared incident light (~3-5 µm) |
| 3.6 µm |
meta atoms |
meta atom thickness d for mid-infrared incident light (~3-5 µm) | 200 nm | meta atoms |
interval between meta atoms for mid-infrared incident light (~3-5 µm) | 400 nm | meta atoms |
sub-meta atom thickness d range (claimed) | 50–300 nm | meta atoms |
Thickness | 20000–200000 cm | — |